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1. 发明申请

WO2006025609A2 THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：WO2006025609A2
公开(公告)日：2006-03-09
申请号：PCT/JP2005/016566
申请日：2005-09-02
申请人： CASIO COMPUTER CO., LTD. , ISHII, Hiromitsu , HOKARI, Hitoshi , YOSHIDA, Motohiko , YAMAGUCHI, Ikuhiro
发明人： ISHII, Hiromitsu , HOKARI, Hitoshi , YOSHIDA, Motohiko , YAMAGUCHI, Ikuhiro
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/45 , H01L29/66969 , H01L29/78618
摘要： A thin film transistor of the present invention includes a semiconductor thin film (8); a gate insulating film (7) formed on one surface of the semiconductor thin film (8); a gate electrode (6) formed to be opposite to the semiconductor thin film (8) through the gate insulating film (7); a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor thin film (8); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film (9) formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film (8), and having a contact hole (10, 11) through which at least a part of each of the source region and the drain region is exposed wherein the source electrode (15) and the drain electrode (16) are connected to the semiconductor thin film (8) through the contact hole (10, 11).
摘要翻译：本发明的薄膜晶体管包括半导体薄膜（8）;以及半导体薄膜（8）。在半导体薄膜（8）的一个表面上形成的栅绝缘膜（7）; 通过栅绝缘膜（7）形成为与半导体薄膜（8）相对的栅电极（6）; 与半导体薄膜（8）电连接的源电极（15）和漏电极（16）; 源区域; 一个漏极区域; 和一个频道区域。该薄膜晶体管还包括形成在与半导体薄膜（8）的至少源极区域和漏极区域相对应的周边部分上的绝缘膜（9），并具有接触孔（10,11），通过该接触孔源极区域和漏极区域的每一个的至少一部分被暴露，其中源电极（15）和漏电极（16）通过接触孔（10,11）连接到半导体薄膜（8）。 / p>

2. 发明申请

WO2006132392A1 LIQUID CRYSTAL DISPLAY APPARATUS 审中-公开
标题翻译：液晶显示装置
公开(公告)号：WO2006132392A1
公开(公告)日：2006-12-14
申请号：PCT/JP2006/311687
申请日：2006-06-06
申请人： CASIO COMPUTER CO., LTD. , ISHII, Hiromitsu
发明人： ISHII, Hiromitsu
IPC分类号： G02F1/1362
CPC分类号： G02F1/136209 , G02F1/136213 , G02F2001/13629 , G02F2201/40 , G02F2203/01
摘要： A thin film transistor (5) is provided in a vicinity of a crossing region of scanning and the data lines (2, 3) on a first substrate (1). A pixel electrode (4) is connected with the thin film transistor (5). A transparent electroconductive layer (6) which is applied with a common potential is provided between the pixel electrodes and the scanning lines and data lines to cover the scanning and date lines, is superimposed on peripheral portions of the pixel electrodes on both sides. An insulating film (18) is formed between the pixel electrodes and the electroconductive layer. An opposed electrode (33) is formed on a second substrate (31) to correspond to the pixel electrodes. A liquid crystal (35) is provided between the pixel electrodes and opposed electrode.
摘要翻译：薄膜晶体管（5）设置在第一基板（1）上的扫描交叉区域和数据线（2,3）附近。像素电极（4）与薄膜晶体管（5）连接。在像素电极和扫描线之间设置施加有公共电位的透明导电层（6），覆盖扫描线和日期线的数据线叠置在两侧的像素电极的周边部分上。在像素电极和导电层之间形成绝缘膜（18）。在第二基板（31）上形成对应于像素电极的相对电极（33）。在像素电极和相对电极之间设置液晶（35）。

3. 发明申请

WO1989012660A1 POLYACETAL RESIN COMPOSITION 审中-公开
标题翻译：聚酯树脂组合物
公开(公告)号：WO1989012660A1
公开(公告)日：1989-12-28
申请号：PCT/JP1989000623
申请日：1989-06-22
申请人： TORAY INDUSTRIES, INC. , KUNITOMI, Masaki , ISHII, Hiromitsu , YAMAMOTO, Yoshiyuki
发明人： TORAY INDUSTRIES, INC.
IPC分类号： C08L59/00
CPC分类号： C08L59/00 , C08L67/02 , C08L2666/18
摘要： The title resin composition is composed of (A) 100 parts by weight of polyacetal resin and (B) 1 to 100 parts by weight of polyetherester block copolymer of (a) a dicarboxylic acid component mainly comprising terephthalic acid, (b) a glycol component mainly comprising 1,4-butanediol and (c) a poly(ethylene oxide)glycol derivative of a number-average molecular weight of 500 to 20,000 containing 20 to 95 wt % of poly(ethylene oxide) carboxylate units. It has excellent antistatic and mechanical properties, particularly impact resistance.

4. 发明申请

WO2006132439A1 THIN FILM TRANSISTOR HAVING CHANNEL COMPRISING ZINC OXIDE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：具有包含氧化锌的通道的薄膜晶体管及其制造方法
公开(公告)号：WO2006132439A1
公开(公告)日：2006-12-14
申请号：PCT/JP2006/312076
申请日：2006-06-09
申请人： CASIO COMPUTER CO., LTD , ISHII, Hiromitsu
发明人： ISHII, Hiromitsu
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , G02F1/1368
摘要： A thin film transistor has a semiconductor thin film (15) including zinc oxide, a protection film (16) formed on entirely the upper surface of the semiconductor thin film (15), a gate insulating film (17) formed on the protection film (16), a gate electrode (18) formed on the gate insulating film (17) above the semiconductor thin film (15), and a source electrode (11) and drain electrode (12) formed under the semiconductor thin film so as to be electrically connected to the semiconductor thin film (15).
摘要翻译：薄膜晶体管具有包括氧化锌的半导体薄膜（15），整体形成在半导体薄膜（15）的上表面上的保护膜（16），形成在保护膜上的栅极绝缘膜（17） 16），形成在半导体薄膜（15）上方的栅极绝缘膜（17）上的栅电极（18），以及形成在半导体薄膜下面的源电极（11）和漏电极（12）电连接到半导体薄膜（15）。

5. 发明申请

WO2006093029A1 THIN FILM TRANSISTOR PANEL 审中-公开
标题翻译：薄膜晶体管面板
公开(公告)号：WO2006093029A1
公开(公告)日：2006-09-08
申请号：PCT/JP2006/303351
申请日：2006-02-17
申请人： CASIO COMPUTER CO., LTD. , ISHII, Hiromitsu
发明人： ISHII, Hiromitsu
IPC分类号： H01L29/786 , H01L21/84 , H01L29/12 , G02F1/1362
CPC分类号： H01L27/124 , G02F1/134336 , G02F1/136227 , G02F2201/40 , H01L27/1214 , H01L27/1225 , H01L27/1255 , H01L29/12 , H01L29/78681
摘要： A thin film transistor panel, including: a transparent substrate (1); scanning lines (2) made of a transparent electroconductive material, formed on the transparent substrate (1); data lines (3) formed on the transparent substrate to be perpendicular to the scanning lines (2); thin film transistors (5), each provided with a transparent gate electrode (11) connected to one of the scanning lines (2), a transparent drain electrode (16) connected to one of the data lines (3), a transparent source electrode (15) and a transparent semiconductor thin film (13); and transparent pixel electrodes (4) connected to the thin film transistors (5), wherein each of the pixel electrodes (4) is formed to cover each of the thin film transistors (5).
摘要翻译：一种薄膜晶体管板，包括：透明基板（1）; 在透明基板（1）上形成由透明导电材料制成的扫描线（2）; 数据线（3），形成在所述透明基板上以垂直于所述扫描线（2）; 薄膜晶体管（5），每个设置有连接到扫描线（2）之一的透明栅电极（11），连接到数据线（3）之一的透明漏电极（16），透明源电极（15）和透明半导体薄膜（13）; 以及连接到薄膜晶体管（5）的透明像素电极（4），其中形成每个像素电极（4）以覆盖每个薄膜晶体管（5）。

6. 发明申请

WO2006025609A3 THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：WO2006025609A3
公开(公告)日：2006-04-27
申请号：PCT/JP2005016566
申请日：2005-09-02
申请人： CASIO COMPUTER CO LTD , ISHII HIROMITSU , HOKARI HITOSHI , YOSHIDA MOTOHIKO , YAMAGUCHI IKUHIRO
发明人： ISHII HIROMITSU , HOKARI HITOSHI , YOSHIDA MOTOHIKO , YAMAGUCHI IKUHIRO
IPC分类号： H01L29/45 , H01L21/336 , H01L29/417 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/45 , H01L29/66969 , H01L29/78618
摘要： A thin film transistor of the present invention includes a semiconductor thin film (8); a gate insulating film (7) formed on one surface of the semiconductor thin film (8); a gate electrode (6) formed to be opposite to the semiconductor thin film (8) through the gate insulating film (7); a source electrode (15) and a drain electrode (16) electrically connected to the semiconductor thin film (8); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film (9) formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film (8), and having a contact hole (10, 11) through which at least a part of each of the source region and the drain region is exposed wherein the source electrode (15) and the drain electrode (16) are connected to the semiconductor thin film (8) through the contact hole (10, 11).
摘要翻译：本发明的薄膜晶体管包括半导体薄膜（8）; 形成在半导体薄膜（8）的一个表面上的栅极绝缘膜（7）; 通过栅极绝缘膜形成为与半导体薄膜（8）相对的栅电极（6）; 电连接到半导体薄膜（8）的源电极（15）和漏电极（16）。源区; 漏区; 和通道区域。薄膜晶体管还包括形成在至少对应于半导体薄膜（8）的源极区域和漏极区域的周边部分上的绝缘膜（9），并且具有接触孔（10,11）源极区域和漏极区域中的至少一部分被暴露，其中源电极（15）和漏电极（16）通过接触孔（10,11）连接到半导体薄膜（8）。

7. 发明申请

WO1990014376A1 METHOD OF CONTINUOUS PRODUCTION OF ELASTIC POLYESTER 审中-公开
标题翻译：连续生产弹性聚酯的方法
公开(公告)号：WO1990014376A1
公开(公告)日：1990-11-29
申请号：PCT/JP1990000626
申请日：1990-05-17
申请人： TORAY INDUSTRIES, INC. , ISHII, Hiromitsu , YAMAMOTO, Shoji , YAMAMOTO, Yoshiyuki
发明人： TORAY INDUSTRIES, INC.
IPC分类号： C08G63/78
CPC分类号： B01J19/20 , C08G63/60 , C08G63/785
摘要： An elastic polyester is continuously produced by continuously feeding an aromatic polyester and a lactone to an extruder (6), which is provided with a cylinder having an aspect ratio (L/D) ranging from 3 to 50 (wherein L represents the cylinder length of a reactor and D the inner diameter of the cylinder) and at least one screw and wherein the space in the cylinder provided with the screw accounts for 70 % or less of the internal volume of the cylinder, and reacting the lactone with the aromatic polyester while conducting the melting, carrying and kneading of the feed material in the extruder (6). Since the screw can be turned with a high speed, the effect of kneading can be enhanced and the reaction time can be shortened. Since the obtained elastic polyester is excellent in durability represented by thermal and weathering resistances, rubber elasticity, and mechanical properties, it has a wide range of uses such as automotive parts, electric and electronics components and machine parts.

8. 发明申请

WO1990008370A1 FIRE ALARM 审中-公开
标题翻译：火警
公开(公告)号：WO1990008370A1
公开(公告)日：1990-07-26
申请号：PCT/JP1990000062
申请日：1990-01-19
申请人： HOCHIKI CORPORATION , ISHII, Hiromitsu , ONO, Takashi
发明人： HOCHIKI CORPORATION
IPC分类号： G08B17/00
CPC分类号： G08B17/00
摘要： A fire alarm provided with a sensor set in a fire monitoring section and adapted to detect the variations of physical phenomena accompanying a fire, such as the variations of temperature, densities of smoke and CO gas, a means for calculating primary fire source information including the quantities of generated heat, smoke and gases on the basis of the information detected by the sensor, and a fire judgement means for judging the occurrence of a fire on the basis of the quantity of variations of the fire source information, which are determined by the fire source information calculating means, and the correction between the information, and giving an alarm.

9. 发明申请

WO2007089048A3 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：WO2007089048A3
公开(公告)日：2007-11-22
申请号：PCT/JP2007052310
申请日：2007-02-02
申请人： KOCHI IND PROMOTION CT , CASIO COMPUTER CO LTD , FURUTA MAMORU , HIRAO TAKASHI , FURUTA HIROSHI , MATSUDA TOKIYOSHI , HIRAMATSU TAKAHIRO , ISHII HIROMITSU , HOKARI HITOSHI , YOSHIDA MOTOHIKO
发明人： FURUTA MAMORU , HIRAO TAKASHI , FURUTA HIROSHI , MATSUDA TOKIYOSHI , HIRAMATSU TAKAHIRO , ISHII HIROMITSU , HOKARI HITOSHI , YOSHIDA MOTOHIKO
IPC分类号： H01L29/786 , H01L29/417
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/42384 , H01L29/66969 , H01L29/78606 , H01L29/78618
摘要： A thin film transistor includes a substrate (1, 11) , and a pair of source/drain electrodes (2, 14) (i.e. , a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films (10, 20) are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer (3, 15) is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.
摘要翻译：薄膜晶体管包括基板（1,11），以及形成在基板上并在其之间形成间隙的一对源极/漏极（2,14）（即源电极和漏电极）。提供一对低电阻导电薄膜（10,20），使得每个涂覆源极/漏极之一的至少一部分。低电阻导电薄膜在它们之间限定了间隙。在一对低电阻导电薄膜的上表面上连续地形成氧化物半导体薄膜层（3,15），并沿着限定在低电阻导电薄膜之间的间隙延伸，以作为通道。氧化物半导体薄膜层的侧表面和低电阻导电薄膜的相应侧表面在沟道的沟道宽度方向上彼此重合。

10. 发明申请

WO2007089048A2 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：WO2007089048A2
公开(公告)日：2007-08-09
申请号：PCT/JP2007/052310
申请日：2007-02-02
申请人： KOCHI INDUSTRIAL PROMOTION CENTER , CASIO COMPUTER CO., LTD. , FURUTA, Mamoru , HIRAO, Takashi , FURUTA, Hiroshi , MATSUDA, Tokiyoshi , HIRAMATSU, Takahiro , ISHII, Hiromitsu , HOKARI, Hitoshi , YOSHIDA, Motohiko
发明人： FURUTA, Mamoru , HIRAO, Takashi , FURUTA, Hiroshi , MATSUDA, Tokiyoshi , HIRAMATSU, Takahiro , ISHII, Hiromitsu , HOKARI, Hitoshi , YOSHIDA, Motohiko
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/42384 , H01L29/66969 , H01L29/78606 , H01L29/78618
摘要： A thin film transistor includes a substrate (1, 11), and a pair of source/drain electrodes (2, 14) (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films (10, 20) are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer (3, 15) is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.
摘要翻译：薄膜晶体管包括基板（1,11），以及形成在基板上并在其之间形成间隙的一对源极/漏极（2,14）（即源电极和漏电极）。提供一对低电阻导电薄膜（10,20），使得每个涂覆源极/漏极之一的至少一部分。低电阻导电薄膜在它们之间限定了间隙。在一对低电阻导电薄膜的上表面上连续地形成氧化物半导体薄膜层（3,15），并沿着限定在低电阻导电薄膜之间的间隙延伸，以作为通道。氧化物半导体薄膜层的侧表面和低电阻导电薄膜的相应侧表面在沟道的沟道宽度方向上彼此重合。

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