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1. 发明申请

WO2013052509A3 REMOTE PLASMA BURN-IN 审中-公开
标题翻译：远程等离子体燃烧
公开(公告)号：WO2013052509A3
公开(公告)日：2013-06-13
申请号：PCT/US2012058498
申请日：2012-10-02
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , JI LILI , INGLE NITIN K
发明人： LIANG JINGMEI , JI LILI , INGLE NITIN K
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01J37/32862 , H01L21/02164 , H01L21/02211 , H01L21/02219 , H01L21/02274 , H01L21/02326
摘要： Methods of treating the interior of a plasma region are described. The methods include a preventative maintenance procedure or the start-up of a new substrate processing chamber having a remote plasma system. A new interior surface is exposed within the remote plasma system. The (new) interior surfaces are then treated by sequential steps of (1) forming a remote plasma from hydrogen-containing precursor within the remote plasma system and then (2) exposing the interior surfaces to water vapor. Steps (1)-(2) are repeated at least ten times to complete the burn-in process. Following the treatment of the interior surfaces, a substrate may be transferred into a substrate processing chamber. A dielectric film may then be formed on the substrate by flowing one precursor through the remote plasma source and combining the plasma effluents with a second precursor flowing directly to the substrate processing region.
摘要翻译：描述了处理等离子体区域内部的方法。该方法包括预防性维护程序或启动具有远程等离子体系统的新基板处理室。一个新的内表面暴露在远程等离子体系统内。然后通过（1）在远程等离子体系统内由含氢前驱体形成远程等离子体，然后（2）将内表面暴露于水蒸汽，来处理（新）内表面。步骤（1） - （2）重复至少十次以完成老化过程。在处理内表面之后，可以将衬底转移到衬底处理室中。然后可以通过使一个前驱体流过远程等离子体源并且将等离子体流出物与直接流向基板处理区域的第二前驱体组合来在基板上形成电介质膜。

2. 发明申请

WO2012015610A3 OXIDE-RICH LINER LAYER FOR FLOWABLE CVD GAPFILL 审中-公开
标题翻译：用于流动CVD GAPFILL的氧化物衬里层
公开(公告)号：WO2012015610A3
公开(公告)日：2012-04-26
申请号：PCT/US2011044219
申请日：2011-07-15
申请人： APPLIED MATERIALS INC , LI DONGQING , LIANG JINGMEI , INGLE NITIN K
发明人： LI DONGQING , LIANG JINGMEI , INGLE NITIN K
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： H01L21/02164 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02337
摘要： Formation of gap-filling silicon oxide layer with reduced volume fraction of voids is described. Deposition involves formation of an oxygen-rich less-flowable liner layer before an oxygen-poor more-flowable gapfill layer. However, the liner layer is deposited within same chamber as gapfill layer. Liner layer and gapfill layer may both be formed by combining a radical component with an unexcited silicon-containing precursor (i.e. not directly excited by application of plasma power). Liner layer has more oxygen content than gapfill layer and deposits more conformally. Deposition rate of the gapfill layer may be increased by the presence of the liner layer. Gapfill layer may contain silicon, oxygen and nitrogen and be converted at elevated temperature to contain more oxygen and less nitrogen. Presence of the gapfill liner provides a source of oxygen underneath the gapfill layer to augment the gas phase oxygen introduced during the conversion.
摘要翻译：描述了具有减小的空隙体积分数的间隙填充氧化硅层的形成。沉积涉及在贫氧的更易流动的间隙填充层之前形成富氧的较少流动的衬层。然而，衬垫层沉积在与间隙填充层相同的腔室内。衬里层和间隙填充层可以通过将自由基组分与未掺杂的含硅前体（即不通过施加等离子体功率直接激发）组合形成。衬垫层具有比间隙填充层更多的氧含量，并且更保守地沉积。间隙填充层的沉积速率可以通过衬垫层的存在而增加。填隙层可能含有硅，氧和氮，并在高温下转化为含有更多的氧和较少的氮。间隙填料衬垫的存在在间隙填充层下面提供氧气源，以增加在转化期间引入的气相氧。

3. 发明申请

WO2011090626A3 DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO 审中-公开
标题翻译：使用灵活的氮气/氢气比率生产的放射线电介质膜生长
公开(公告)号：WO2011090626A3
公开(公告)日：2011-10-27
申请号：PCT/US2010060852
申请日：2010-12-16
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , CHEN XIAOLIN , MILLER MATTHEW L , INGLE NITIN K , VENKATARAMAN SHANKAR
发明人： LIANG JINGMEI , CHEN XIAOLIN , MILLER MATTHEW L , INGLE NITIN K , VENKATARAMAN SHANKAR
IPC分类号： H01L21/31 , H01L21/205 , H01L21/324
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述形成电介质层的方法。该方法可以包括以下步骤：将含硅前体与自由基 - 氮前体混合，并在基底上沉积电介质层。通过将氢（H 2）和氮（N 2）流入等离子体中，在远离等离子体中形成自由基 - 氮前体，以便调节氮/氢比。电介质层最初是含硅和氮的层，其可以通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

4. 发明申请

WO2011084812A2 FLOWABLE DIELECTRIC USING OXIDE LINER 审中-公开
标题翻译：使用氧化物衬垫的可流动介质
公开(公告)号：WO2011084812A2
公开(公告)日：2011-07-14
申请号：PCT/US2010061605
申请日：2010-12-21
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , INGLE NITIN K
发明人： LIANG JINGMEI , INGLE NITIN K
IPC分类号： H01L21/31
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/56 , H01J37/32357 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02337
摘要： Methods of forming silicon oxide layers are described. The methods include mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing a hydrogen-and-nitrogen-containing precursor into the plasma. Prior to depositing the silicon-and-nitrogen-containing layer, a silicon oxide liner layer is formed to improve adhesion, smoothness and flowability of the silicon-and-nitrogen-containing layer. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film. Methods also include forming a silicon oxide liner layer before applying a spin-on silicon-containing material.
摘要翻译：描述了形成氧化硅层的方法。该方法包括将不含碳的含硅前体与自由基氮前体混合，以及在衬底上沉积含硅和氮的层。通过使含氢和氮的前体流入等离子体，在等离子体中形成自由基氮前体。在沉积含硅和氮的层之前，形成氧化硅衬里层以改善含硅和氮的层的粘附性，光滑性和流动性。通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。方法还包括在施加旋涂含硅材料之前形成氧化硅衬里层。

5. 发明申请

WO2012122392A3 POST-PLANARIZATION DENSIFICATION 审中-公开
标题翻译：后平面化密度
公开(公告)号：WO2012122392A3
公开(公告)日：2012-12-20
申请号：PCT/US2012028310
申请日：2012-03-08
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , INGLE NITIN K , VENKATARAMAN SHANKAR
发明人： LIANG JINGMEI , INGLE NITIN K , VENKATARAMAN SHANKAR
IPC分类号： H01L21/31 , H01L21/304
CPC分类号： H01L21/02164 , H01L21/02337 , H01L21/3105 , H01L21/31055 , H01L21/316 , H01L21/76229
摘要： Processes for forming high density gap-filling silicon oxide on a patterned substrate are described. The processes increase the density of gap-filling silicon oxide particularly in narrow trenches. The density may also be increased in wide trenches and recessed open areas. The densities of the gap-filling silicon oxide in the narrow and wide trenches/open areas become more similar following the treatment which allows the etch rates to match more closely. This effect may also be described as a reduction in the pattern loading effect. The process involves forming then planarizing silicon oxide. Planarization exposes a new dielectric interface disposed closer to the narrow trenches. The newly exposed interface facilitates a densification treatment by annealing and/or exposing the planarized surface to a plasma.
摘要翻译：描述了在图案化衬底上形成高密度间隙填充氧化硅的工艺。该工艺增加了填隙氧化硅的密度，特别是在狭窄的沟槽中。在宽的沟槽和凹陷的开放区域中密度也可能增加。在允许蚀刻速率更接近地匹配的处理之后，狭窄和宽的沟槽/开放区域中的填隙氧化硅的密度变得更相似。这种影响也可以被描述为模式负载效应的减少。该工艺涉及形成平坦化的氧化硅。平面化暴露了一个新的电介质界面放置在狭窄的沟槽附近。新暴露的界面通过退火和/或将平面化的表面暴露于等离子体而促进致密化处理。

6. 发明申请

WO2011109148A3 CONFORMAL LAYERS BY RADICAL-COMPONENT CVD 审中-公开
标题翻译：通过放射性元素CVD的合适层
公开(公告)号：WO2011109148A3
公开(公告)日：2012-02-23
申请号：PCT/US2011024378
申请日：2011-02-10
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , CHEN XIAOLIN , LI DONGQING , INGLE NITIN K
发明人： LIANG JINGMEI , CHEN XIAOLIN , LI DONGQING , INGLE NITIN K
IPC分类号： H01L21/318
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/02271 , H01L21/02326 , H01L21/76837
摘要： Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., silicon-nitrogen-hydrogen (Si-N-H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. Carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with radical-nitrogen precursor. Because silicon-and-nitrogen film is formed without carbon, conversion of film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows optical properties of conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer is found to improve wetting properties and allows flowable films to more completely fill the trench.
摘要翻译：描述了用于形成含有硅和氮的保形电介质层（例如，硅 - 氮 - 氢（Si-N-H）膜）的方法，材料和系统，其来自无碳硅和氮前体和自由基 - 氮前体。无碳硅氮前驱主要通过与自由基 - 氮前体接触激发。由于无碳膜而形成硅 - 氮膜，因此，薄膜转化成硬化氧化硅可以减少孔形成和体积收缩。沉积的含硅和氮的膜可以全部或部分地转化为允许保形介电层的光学特性可选择的氧化硅。可以在低温下进行薄的含硅和氮的膜的沉积，以在衬底沟槽中形成衬垫层。发现低温内衬层可改善润湿性能，并允许可流动膜更完全地填充沟槽。

7. 发明申请

WO2011049800A3 STRESS MANAGEMENT FOR TENSILE FILMS 审中-公开
标题翻译：拉伸片的应力管理
公开(公告)号：WO2011049800A3
公开(公告)日：2011-07-14
申请号：PCT/US2010052548
申请日：2010-10-13
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , PATEL ANJANA M , INGLE NITIN K , VENKATARAMAN SHANKAR
发明人： LIANG JINGMEI , PATEL ANJANA M , INGLE NITIN K , VENKATARAMAN SHANKAR
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： H01L21/31608 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/02304 , H01L21/02326 , H01L21/02362 , H01L21/3185 , H01L21/76829 , H01L21/76834 , H01L21/76837
摘要： The formation of a gap-filling silicon oxide layer with reduced tendency towards cracking is described. The deposition involves formation of a flowable silicon-containing layer which facilitates the filling of trenches. Subsequent processing at high substrate temperature causes less cracking in the dielectric film than flowable films formed in accordance with methods in the prior art. A compressive liner layer deposited prior to the formation of the gap-filling silicon oxide layer is described and reduces the tendency for the subsequently deposited film to crack. A compressive capping layer deposited after a flowable silicon-containing layer has also been determined to reduce cracking. Compressive liner layers and compressive capping layers can be used alone or in combination to reduce and often eliminate cracking. Compressive capping layers in disclosed embodiments have additionally been determined to enable an underlying layer of silicon nitride to be transformed into a silicon oxide layer.
摘要翻译：描述了具有降低的开裂倾向的间隙填充氧化硅层的形成。沉积涉及形成有助于填充沟槽的可流动的含硅层。在基板温度高的情况下，与根据现有技术中的方法形成的可流动膜相比，在电介质膜中的裂纹较少。描述在形成间隙填充氧化硅层之前沉积的压缩衬垫层，并且降低随后沉积的膜破裂的倾向。在可流动的含硅层之后沉积的压缩覆盖层也被确定以减少开裂。压缩衬里层和压缩覆盖层可以单独使用或组合使用以减少并经常消除开裂。已经确定了所公开的实施例中的压缩覆盖层，以使氮化硅的下层能够转变成氧化硅层。

8. 发明申请

WO2012094149A3 RADICAL STEAM CVD 审中-公开
标题翻译：放射性CVD
公开(公告)号：WO2012094149A3
公开(公告)日：2013-01-31
申请号：PCT/US2011066275
申请日：2011-12-20
申请人： APPLIED MATERIALS INC , LI DONGQING , LIANG JINGMEI , CHEN XIAOLIN , INGLE NITIN K
发明人： LI DONGQING , LIANG JINGMEI , CHEN XIAOLIN , INGLE NITIN K
IPC分类号： H01L21/316
CPC分类号： C23C16/308 , C23C16/045 , C23C16/452 , C23C16/56
摘要： Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
摘要翻译：描述形成氧化硅层的方法。这些方法包括同时将等离子体激发（自由基）蒸汽与未催化的硅前体组合。可以通过等离子体激发途径（例如通过向蒸汽中加入氨）和/或通过选择含氮的未催化的硅前体来供应氮。该方法导致在衬底上沉积含硅 - 氧和氮的层。然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有很少或不含氮的氧化硅层。氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

9. 发明申请

WO2013012536A2 SURFACE TREATMENT AND DEPOSITION FOR REDUCED OUTGASSING 审中-公开
标题翻译：表面处理和沉积减少出口
公开(公告)号：WO2013012536A2
公开(公告)日：2013-01-24
申请号：PCT/US2012044679
申请日：2012-06-28
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , CHEN XIAOLIN , INGLE NITIN K , VENKATARAMAN SHANKAR
发明人： LIANG JINGMEI , CHEN XIAOLIN , INGLE NITIN K , VENKATARAMAN SHANKAR
IPC分类号： H01L21/318 , H01L21/205
CPC分类号： C23C16/401 , C23C16/345 , C23C16/452 , C23C16/45514 , C23C16/45565 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274
摘要： A method of forming a dielectric layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) layer by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen-containing layer is formed by combining a radical precursor (excited in a remote plasma) with an unexcited carbon-free silicon precursor. A silicon oxide capping layer may be formed from a portion of the carbon-free silicon-nitrogen-and-hydrogen-containing layer to avoid time-evolution of underlying layer properties prior to conversion into silicon oxide. Alternatively, the silicon oxide capping layer is formed over the silicon-nitrogen-and-hydrogen-containing layer. Either method of formation involves the formation of a local plasma within the substrate processing region.
摘要翻译：描述形成电介质层的方法。该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）层。通过将自由基前体（在远程等离子体中激发）与未煅烧的无碳硅前体组合而形成含硅和氮的层。氧化硅覆盖层可以由一部分无碳硅 - 含氮和氢的层形成，以避免在转化成氧化硅之前下层性质的时间演变。或者，氧化硅覆盖层形成在含硅 - 氮和氢的层之上。任一种形成方法都涉及在衬底处理区域内形成局部等离子体。

10. 发明申请

WO2012145148A3 LOW TEMPERATURE SILICON OXIDE CONVERSION 审中-公开
标题翻译：低温氧化硅转化
公开(公告)号：WO2012145148A3
公开(公告)日：2012-12-27
申请号：PCT/US2012031640
申请日：2012-03-30
申请人： APPLIED MATERIALS INC , LIANG JINGMEI , INGLE NITIN K , HONG SUKWON , PATEL ANJANA M
发明人： LIANG JINGMEI , INGLE NITIN K , HONG SUKWON , PATEL ANJANA M
IPC分类号： H01L21/316 , H01L21/205
CPC分类号： C23C16/345 , C23C16/56
摘要： A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The polysilazane film is converted to silicon oxide by exposing the polysilazane film to humidity at low substrate temperature. The polysilazane film may also be dipped in a liquid having both oxygen and hydrogen, such as water, hydrogen peroxide and or ammonium hydroxide. These conversion techniques may be used separately or in a sequential combination. Conversion techniques described herein hasten conversion, produce manufacturing-worthy films and remove the requirement of a high temperature oxidation treatment. An ozone treatment may precede the conversion technique(s).
摘要翻译：描述形成氧化硅层的方法。该方法首先通过自由基组分化学气相沉积（CVD）沉积含硅氮和氢的（聚硅氮烷）膜。通过将聚硅氮烷膜暴露于湿度低的基材温度下将聚硅氮烷膜转化为氧化硅。聚硅氮烷膜也可以浸渍在具有氧和氢的液体中，例如水，过氧化氢和/或氢氧化铵。这些转换技术可以单独使用或按顺序组合使用。本文描述的转换技术加速了转换，产生了具有制造价值的薄膜并消除了高温氧化处理的要求。臭氧处理可以在转化技术之前进行。

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