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1. 发明申请

WO2011005021A3 SUBSTRATE FOR THE DEPOSITION OF A DEPOSITION APPARATUS, FILM-FORMING METHOD, AND METHOD FOR MANUFACTURING AN ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE USING THE SUBSTRATE FOR DEPOSITION 审中-公开
标题翻译：用于沉积设备的沉积基板，成膜方法和用于沉积用于沉积的基板的有机电致发光显示设备的方法
公开(公告)号：WO2011005021A3
公开(公告)日：2011-04-14
申请号：PCT/KR2010004411
申请日：2010-07-07
申请人： ENSILTECH CORP , RO JAE-SANG , HONG WON-EUI
发明人： RO JAE-SANG , HONG WON-EUI
IPC分类号： H01L51/56 , C23C14/24 , H05B33/10
CPC分类号： H01L51/0002 , B32B3/266 , B32B3/30 , C23C14/04 , C23C14/26 , H01L51/0013 , H01L51/5012 , H01L51/5048 , Y10T428/24331 , Y10T428/24521 , Y10T428/24545
摘要： The present invention provides a substrate for the deposition of a deposition apparatus, a film-forming method, and a method for manufacturing an organic electroluminescence display device using the substrate for deposition, comprising: providing a substrate; forming a conductive layer for joule heating on the substrate; forming a first insulation film having grooves or holes on the conductive layer for joule heating; forming a deposition material layer on the first insulation film having grooves or holes; and applying electric fields to the conductive layer for joule heating to joule heat the deposition material layer. Consequently, the present invention has the effects of providing a film-forming method which is advantageous in manufacturing large devices.
摘要翻译：本发明提供一种用于沉积设备的沉积基板，成膜方法以及使用该沉积用基板制造有机电致发光显示设备的方法，该方法包括：提供基板; 在衬底上形成用于焦耳加热的导电层; 在导电层上形成具有用于焦耳加热的凹槽或孔的第一绝缘膜; 在具有凹槽或孔的第一绝缘膜上形成沉积材料层; 并且向导电层施加电场以进行焦耳加热以焦化加热沉积材料层。因此，本发明具有提供有利于制造大型器件的成膜方法的效果。

2. 发明申请

WO2009131379A2 POLYCRYSTALLINE SILICON FILM, A THIN-FILM TRANSISTOR COMPRISING THE SAME, AND A PRODUCTION METHOD THEREOF 审中-公开
标题翻译：多晶硅膜，包含该多晶硅膜的薄膜晶体管及其制造方法
公开(公告)号：WO2009131379A2
公开(公告)日：2009-10-29
申请号：PCT/KR2009002103
申请日：2009-04-22
申请人： ENSILTECH CORP , RO JAE-SANG , HONG WON-EUI
发明人： RO JAE-SANG , HONG WON-EUI
IPC分类号： H01L21/324
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02595 , H01L27/1281 , H01L29/66765 , H01L29/78603
摘要： The present invention relates to a polycrystalline silicon film which is endowed with outstanding resistance characteristics by being formed in such a way that the peak value of the Raman spectrum of the polycrystalline silicon film is between 515 and 517 cm-1, which is shifted to the left as compared with the conventional value of between 518 and 520 cm-1. The present invention also relates to a thin-film transistor comprising such a silicon film, and to a production method thereof.
摘要翻译：本发明涉及一种多晶硅膜，该多晶硅膜通过以多晶硅膜的拉曼光谱的峰值在515和517cm -1之间的方式形成而被赋予优异的电阻特性，与常规值在518和520 cm-1之间的情况相比，保持不变。本发明还涉及包含这种硅膜的薄膜晶体管及其制造方法。

3. 发明申请

WO2009096747A3 APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN FILM 审中-公开
标题翻译：用于制造多晶硅薄膜的装置
公开(公告)号：WO2009096747A3
公开(公告)日：2009-10-15
申请号：PCT/KR2009000480
申请日：2009-01-30
申请人： RO JAE-SANG , HONG WON-EUI , ENSILTECH CORP
发明人： RO JAE-SANG , HONG WON-EUI
IPC分类号： H01L21/20 , H01L21/324
CPC分类号： H01L21/02532 , H01L21/02595 , H01L21/02667 , H01L21/02672 , H01L21/67109 , H01L27/1281 , H01L27/1285 , Y10T29/41
摘要： The invention relates to an apparatus for manufacturing a polycrystalline silicon thin film, which crystallizes an amorphous silicon thin film by: depositing the amorphous silicon thin film and an upper silicon dioxide substrate on a lower silicon dioxide substrate; forming a conductive thin film on the upper silicon dioxide substrate; and applying an electric field and performing Joule heating. The disclosed apparatus comprises: a power supply terminal which is in contact with both ends of an upper side of the conductive thin film and supplies the power to the conductive thin film; and a supporting member which flexibly supports the lower silicon dioxide substrate so that the power supply terminal may be close to both ends of the upper side of the conductive thin film to generate a uniform field on the conductive thin film. In the disclosed invention which crystallizes the amorphous silicon thin film by applying the electric field and performing Joule heating, the power supply terminal is close to both ends of the upper side of the conductive thin film since the supporting member which flexibly supports the lower silicon dioxide substrate is installed on the lower surfaces of both sides of the silicon dioxide substrate. Thus, efficient crystallization is performed in a short time by forming the uniform electric field to the conductive thin film.
摘要翻译：本发明涉及一种用于制造多晶硅薄膜的设备，该设备通过以下步骤使非晶硅薄膜结晶：在下二氧化硅衬底上沉积非晶硅薄膜和上二氧化硅衬底; 在上部二氧化硅衬底上形成导电薄膜; 并施加电场并执行焦耳加热。所公开的设备包括：电源端子，其与导电薄膜的上侧的两端接触并将电力供应到导电薄膜; 以及支撑构件，柔性地支撑下二氧化硅基板，使得电源端子可以靠近导电薄膜的上侧的两端以在导电薄膜上产生均匀的场。在公开的发明中，通过施加电场并进行焦耳加热使非晶硅薄膜结晶化，由于支撑部件灵活地支撑较低的二氧化硅，所以电源端子靠近导电薄膜的上侧的两端衬底安装在二氧化硅衬底的两侧的下表面上。因此，通过在导电薄膜上形成均匀的电场，在短时间内进行有效的结晶。

4. 发明申请

WO2009131379A3 POLYCRYSTALLINE SILICON FILM, A THIN-FILM TRANSISTOR COMPRISING THE SAME, AND A PRODUCTION METHOD THEREOF 审中-公开
标题翻译：多晶硅薄膜，包含该薄膜的薄膜晶体管及其生产方法
公开(公告)号：WO2009131379A3
公开(公告)日：2009-12-23
申请号：PCT/KR2009002103
申请日：2009-04-22
申请人： ENSILTECH CORP , RO JAE-SANG , HONG WON-EUI
发明人： RO JAE-SANG , HONG WON-EUI
IPC分类号： H01L21/324
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02595 , H01L27/1281 , H01L29/66765 , H01L29/78603
摘要： The present invention relates to a polycrystalline silicon film which is endowed with outstanding resistance characteristics by being formed in such a way that the peak value of the Raman spectrum of the polycrystalline silicon film is between 515 and 517 cm-1, which is shifted to the left as compared with the conventional value of between 518 and 520 cm-1. The present invention also relates to a thin-film transistor comprising such a silicon film, and to a production method thereof.
摘要翻译：本发明涉及通过形成多晶硅膜的拉曼光谱的峰值在515和517cm -1之间的方式形成的具有突出的电阻特性的多晶硅膜，其转移到与传统的518和520厘米-1之间的值相比较。本发明还涉及包含这种硅膜的薄膜晶体管及其制造方法。

5. 发明申请

WO2007142399A1 METHOD OF PREVENTING GENERATION OF ARC DURING RAPID ANNEALING BY JOULE HEATING 审中-公开
标题翻译：通过加热快速退火时防止ARC发生的方法
公开(公告)号：WO2007142399A1
公开(公告)日：2007-12-13
申请号：PCT/KR2007/000190
申请日：2007-01-10
申请人： ENSILTECH CORPORATION , RO, Jae-Sang , HONG, Won-Eui
发明人： RO, Jae-Sang , HONG, Won-Eui
IPC分类号： H01L21/324
CPC分类号： H01L21/324 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/02667 , H01L27/1281 , H01L29/66765
摘要： Disclosed herein is a rapid annealing method in a mixed structure composed of a heat treatment-requiring material, dielectric layer and conductive layer, comprising that during rapid annealing on a predetermined part of the heat treatment-requiring material, by instantaneously generated intense heat due to Joule heating by application of an electric field to the conductive layer, the potential difference between the heat treatment-requiring material and the conductive layer is set lower than the dielectric breakdown voltage of the dielectric layer, thereby preventing generation of arc by dielectric breakdown of the dielectric layer during the annealing.
摘要翻译：本文公开了一种由热处理需要材料，电介质层和导电层组成的混合结构中的快速退火方法，其包括在对热处理需要材料的预定部分进行快速退火时由于由于通过向导电层施加电场进行焦耳加热，将需要热处理的材料和导电层之间的电位差设定为低于电介质层的介质击穿电压，从而防止电弧的产生退火期间的介电层。

6. 发明申请

WO2006031017A1 METHOD FOR ANNEALING SILICON THIN FILMS USING CONDUCTIVE LAYERAND POLYCRYSTALLINE SILICON THIN FILMS PREPARED THEREFROM 审中-公开
标题翻译：使用导电层和制备的多晶硅薄膜退火硅薄膜的方法
公开(公告)号：WO2006031017A1
公开(公告)日：2006-03-23
申请号：PCT/KR2005/002588
申请日：2005-08-10
申请人： RO, Jae-Sang , HONG, Won-Eui
发明人： RO, Jae-Sang , HONG, Won-Eui
IPC分类号： H01L21/324
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02595 , H01L21/02686 , H01L21/2022 , H01L21/324 , H01L27/1281
摘要： The present invention provides a method of annealing silicon thin film, which comprises providing a conductive layer underneath a silicon thin film, applying an electric field to the conductive layer to induce Joule heating and thereby to generate intense heat, and carrying out crystallization, elimination of crystal lattice defects, dopant activation, thermal oxidation and the like, of the silicon thin film; and a polycrystalline silicon thin film having high quality prepared by the method. The annealing method of the invention provides a polycrystalline silicon thin film which has virtually no crystal lattice defects, which is completely free from contamination by catalyst metal appearing in polycrystalline silicon thin films produced by crystallization methods such as MIC and MILC, and at the same time, is not accompanied by surface protrusions appearing in polycrystalline silicon thin films produced by ELC, while not incurring thermal deformation of glass substrate.
摘要翻译：本发明提供一种退火硅薄膜的方法，其包括在硅薄膜的下方设置导电层，向导电层施加电场以引起焦耳加热，从而产生强热，并进行结晶，消除硅薄膜的晶格缺陷，掺杂剂活化，热氧化等; 和通过该方法制备的具有高质量的多晶硅薄膜。本发明的退火方法提供了几乎没有晶格缺陷的多晶硅薄膜，其完全没有通过诸如MIC和MILC的结晶方法产生的多晶硅薄膜中出现的催化剂金属的污染，同时不伴随着由ELC制造的多晶硅薄膜中出现的表面突起，而不会引起玻璃基板的热变形。

7. 发明申请

WO2010123262A3 APPARATUS AND METHOD FOR MANUFACTURING A POLYCRYSTALLINE SILICON THIN FILM 审中-公开
标题翻译：用于制造多晶硅薄膜的装置和方法
公开(公告)号：WO2010123262A3
公开(公告)日：2010-12-23
申请号：PCT/KR2010002476
申请日：2010-04-20
申请人： ENSILTECH CORP , RO JAE-SANG , HONG WON-EUI
发明人： RO JAE-SANG , HONG WON-EUI
IPC分类号： H01L21/324 , H01L29/786
CPC分类号： H01L21/326 , H01L21/67103
摘要： The present invention provides an apparatus and a method for manufacturing a polycrystalline silicon thin film. The apparatus for manufacturing a polycrystalline silicon thin film comprises: a chamber; a substrate stage arranged at one side of the chamber such that a substrate with an amorphous silicon thin film and a conductive thin film is loaded onto the substrate stage; and a power applying electrode arranged at the other side of the chamber such that the power-applying electrode faces the substrate stage, and moves toward the substrate loaded onto the substrate stage to apply power to the conductive thin film of the substrate. Here, the power-applying electrode applies power to the conductive thin film to generate joule heat, and crystallizes the amorphous silicon thin film through the thus-generated joule heat. In addition, the apparatus for manufacturing a polycrystalline silicon thin film comprises: a chamber; a substrate stage arranged at one side of the chamber such that a substrate with an amorphous silicon thin film and a conductive thin film is loaded onto the substrate stage; and a power-applying electrode arranged at the other side of the chamber such that the power-applying electrode faces the substrate stage, and applies power to the conductive thin film of the substrate. Here, the substrate stage moves toward the power-applying electrode such that the conductive thin film of the substrate loaded onto the substrate stage is brought into contact with the power-applying electrode. Then, the power-applying electrode applies power to the conductive thin film to generate joule heat, and crystallizes the amorphous silicon thin film through the thus-generated joule heat.
摘要翻译：本发明提供了一种制造多晶硅薄膜的设备和方法。用于制造多晶硅薄膜的设备包括：腔室; 衬底台，布置在所述室的一侧，使得具有非晶硅薄膜和导电薄膜的衬底被加载到所述衬底台上; 以及功率施加电极，该功率施加电极布置在腔室的另一侧，使得功率施加电极面向基板台，并且朝向装载到基板台上的基板移动，以向基板的导电薄膜供电。这里，电源施加电极向导电薄膜施加功率以产生焦耳热，并通过由此产生的焦耳热使非晶硅薄膜结晶。另外，用于制造多晶硅薄膜的设备包括：腔室; 衬底台，布置在所述室的一侧，使得具有非晶硅薄膜和导电薄膜的衬底被加载到所述衬底台上; 以及设置在腔室的另一侧的功率施加电极，使得功率施加电极面对基板台，并且将功率施加到基板的导电薄膜。在此，基板载台朝向电源施加电极移动，使得载置在基板载台上的基板的导电性薄膜与电源施加电极接触。然后，功率施加电极向导电薄膜施加功率以产生焦耳热，并通过由此产生的焦耳热使非晶硅薄膜结晶化。

8. 发明申请

WO2010128783A2 APPARATUS AND METHOD FOR MANUFACTURING A POLYCRYSTALLINE SILICON THIN FILM 审中-公开
标题翻译：用于制造多晶硅薄膜的装置和方法
公开(公告)号：WO2010128783A2
公开(公告)日：2010-11-11
申请号：PCT/KR2010002800
申请日：2010-05-03
申请人： ENSILTECH CORP , RO JAE-SANG , HONG WON-EUI
发明人： RO JAE-SANG , HONG WON-EUI
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , C23C16/24 , H01L21/02667
摘要： The present invention relates to an apparatus and method for manufacturing a polycrystalline silicon thin film, and to an apparatus and method for manufacturing a polycrystalline silicon thin film which prevent a surface of a substrate from being fractured, improve production yields in processes, and reduce manufacturing costs. The present invention provides an apparatus for manufacturing a polycrystalline silicon thin film, comprising: a support unit on which a substrate is loaded; a first conductor and a second conductor arranged on the support unit in parallel to the direction of an supplied current; and a power supply unit arranged in the vicinity of the support unit to supply power. In addition, the present invention provides a method for manufacturing a polycrystalline silicon thin film, which involves applying power to a conductive thin film of a substrate on which an amorphous silicon thin film and the conductive thin film are formed to crystallize the amorphous silicon thin film, wherein said method comprises placing the substrate between a first conductor and a second conductor arranged on a support, and applying the voltage supplied by a power supply source to the conductive thin film and first and second conductors to crystallize the amorphous silicon thin film.
摘要翻译：本发明涉及一种用于制造多晶硅薄膜的装置和方法，以及一种制造多晶硅薄膜的装置和方法，其防止基板表面断裂，提高工艺中的生产率，并减少制造成本。本发明提供一种多晶硅薄膜的制造装置，其特征在于，包括：负载有基板的支撑单元; 布置在所述支撑单元上的第一导体和第二导体，平行于所提供的电流的方向; 以及布置在所述支撑单元附近以供电的电源单元。另外，本发明提供一种多晶硅薄膜的制造方法，其特征在于，在形成有非晶硅薄膜和导电薄膜的基板的导电性薄膜上进行电力结晶，使非晶硅薄膜其中所述方法包括将衬底放置在布置在支撑体上的第一导体和第二导体之间，并将由电源提供的电压施加到导电薄膜以及第一和第二导体以使非晶硅薄膜结晶。

9. 发明申请

WO2010024555A3 APPARATUS AND METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICONE THIN FILM 审中-公开
标题翻译：用于制造多晶硅氧烷薄膜的装置和方法
公开(公告)号：WO2010024555A3
公开(公告)日：2010-06-17
申请号：PCT/KR2009004662
申请日：2009-08-21
申请人： ENSILTECH CORP , RO JAE-SANG , HONG WON-EUI
发明人： RO JAE-SANG , HONG WON-EUI
IPC分类号： H01L21/68
CPC分类号： H01L21/68742 , C23C16/56 , H01L21/68764
摘要： The present invention concerns an apparatus and method for manufacturing a polycrystalline silicone thin film, and provides an apparatus and method for manufacturing a polycrystalline silicone thin film wherein joule heat is generated by applying electrical power to a substrate, and a polycrystalline silicon thin film is manufactured by this means. The present invention comprises a chamber; a substrate support part installed at the bottom of said chamber and furnished with an amorphous silicone thin film and a conductive thin film; and a power application part installed at the top of said chamber and furnished with an electrode for power application to apply electrical power to said conductive thin film; said substrate support part comprises a UVW stage installed at the bottom of said chamber and a substrate stage installed at the top of said UVW stage. In addition, the present invention relates to a method for manufacturing a polycrystalline silicone thin film comprising a crystallization preparation step wherein preparations are made for crystallization to proceed such that a substrate stage that is installed at the bottom of the chamber is aligned with a substrate that is located at the top of said substrate stage and that has a conductive thin film and an amorphous silicone thin film formed over it, using the UVW stage located at the bottom of said substrate stage; and a crystallization step wherein the electrode for the power supply that is installed at the top of said chamber is placed in contact with said conductive thin film to supply power and generate joule heat, and said generated joule heat is used to crystallize said amorphous silicone thin film.
摘要翻译：本发明涉及一种用于制造多晶硅薄膜的设备和方法，并且提供了一种用于制造多晶硅薄膜的设备和方法，其中通过向基板施加电功率而产生焦耳热，并且制造多晶硅薄膜通过这种方式。本发明包括腔室; 衬底支撑部分，其安装在所述室的底部并且配备有非晶硅酮薄膜和导电薄膜; 以及电力施加部分，安装在所述室的顶部并且配备有用于施加电力的电极以向所述导电薄膜施加电力; 所述衬底支撑部件包括安装在所述室的底部的UVW台和安装在所述UVW台的顶部的衬底台。此外，本发明涉及一种制造多晶硅氧烷薄膜的方法，该方法包括结晶制备步骤，其中制备用于结晶化的制备以使得安装在该室底部的衬底台与衬底对齐位于所述衬底台的顶部，并且使用位于所述衬底台的底部的UVW台，所述衬底台具有导电薄膜和形成在其上的非晶硅酮薄膜; 以及结晶步骤，其中安装在所述室的顶部的电源的电极与所述导电薄膜接触以供电并产生焦耳热，并且所述产生的焦耳热用于使所述非晶硅薄膜结晶电影。

10. 发明申请

WO2009154381A3 SPUTTERING APPARATUS AND MULTI-CHAMBER COMPRISING THE SAME 审中-公开
标题翻译：溅射装置和包括其的多室
公开(公告)号：WO2009154381A3
公开(公告)日：2010-03-11
申请号：PCT/KR2009003194
申请日：2009-06-15
申请人： ENSILTECH CORP , RO JAE-SANG , HONG WON-EUI
发明人： RO JAE-SANG , HONG WON-EUI
IPC分类号： H01L21/203
CPC分类号： C23C14/042 , H01J37/34 , H01J37/3447
摘要： The present invention relates to a sputtering apparatus and a multi-chamber comprising the same, which can reduce manufacturing costs and increase deposition efficiency. The present invention discloses a sputtering device including: a chamber; a target unit arranged in the chamber, and which contains a target; a substrate support unit arranged opposite the target unit, and which fixes and supports a substrate; and a shadow mask interposed between the target unit and the substrate support unit, and which contains a plate and a hole formed in the plate, wherein the target and the hole are positioned in correspondence with one another.
摘要翻译：本发明涉及一种溅射装置和包括该溅射装置的多室，其可以降低制造成本并提高沉积效率。本发明公开了一种溅射装置，包括：腔室; 设置在所述室中并且包含目标的目标单元; 基板支撑单元，其布置成与所述目标单元相对，并且固定和支撑基板; 以及设置在所述目标单元和所述基板支撑单元之间的荫罩，所述荫罩包含形成在所述板中的板和孔，其中所述目标和所述孔相对应地定位。

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