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1. 发明申请

WO2013012675A3 METHODS AND APPARATUS FOR PROCESSING SUBSTRATES USING MODEL-BASED CONTROL 审中-公开
标题翻译：使用基于模型的控制处理基板的方法和装置
公开(公告)号：WO2013012675A3
公开(公告)日：2013-04-25
申请号：PCT/US2012046452
申请日：2012-07-12
申请人： APPLIED MATERIALS INC , PORTHOUSE KEITH BRIAN , LANE JOHN W , GREGOR MARIUSCH , MERRY NIR , RICE MICHAEL R , MINKOVICH ALEX , LI HONGBIN , DZILNO DMITRY A
发明人： PORTHOUSE KEITH BRIAN , LANE JOHN W , GREGOR MARIUSCH , MERRY NIR , RICE MICHAEL R , MINKOVICH ALEX , LI HONGBIN , DZILNO DMITRY A
IPC分类号： H01L21/205 , H01L21/02 , H01L21/3065
CPC分类号： G05D16/2046 , G05B17/02 , H01L21/67017 , H01L21/67253
摘要： Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.
摘要翻译：本文公开了方法和装置。在一些实施例中，控制处理室的方法可以包括根据处理参数来预先确定处理容积中的压力与排气门的位置之间的关系; 将所述处理室设定为处理容积中具有第一压力的第一状态和所述处理参数的第一值，其中所述排气阀基于所述预定关系设定在第一位置以产生所述第一值的所述第一压力; 当所述处理室改变为具有来自所述第一状态的第二压力和第二过程参数值的第二状态时，确定压力控制曲线以控制所述压力; 以及通过在将处理室改变到第二状态的同时改变排气门的位置来施加压力控制曲线来控制压力。

2. 发明申请

WO2009152103A3 METHOD AND APPARATUS FOR DAMPENING PRESSURE FLUCTUATIONS IN A FLUID DELIVERY SYSTEM 审中-公开
标题翻译：用于减轻流体输送系统中的压力波动的方法和装置
公开(公告)号：WO2009152103A3
公开(公告)日：2010-03-11
申请号：PCT/US2009046639
申请日：2009-06-08
申请人： APPLIED MATERIALS INC , LANE JOHN WILLIAM , GREGOR MARIUSCH , VUKOTIC EMIR
发明人： LANE JOHN WILLIAM , GREGOR MARIUSCH , VUKOTIC EMIR
IPC分类号： H01L21/00 , H01L21/02 , H01L21/20 , H01L21/3065
CPC分类号： F17D1/20 , F16L55/02754 , F16L55/055 , Y10T137/0396 , Y10T137/7922
摘要： A method and apparatus are provided for a cost effective pressure dampening device used in a fluid delivery system for substrate processing. In one embodiment, the pressure dampening device is disposed between a mounting substrate and a control valve within a fluid control assembly in fluid communication with a substrate processing chamber. The pressure dampening device is capable of dampening small pressure perturbations in a process fluid which is used for substrate processing.
摘要翻译：提供了一种用于在用于衬底处理的流体输送系统中使用的成本有效的压力衰减装置的方法和装置。在一个实施例中，压力阻尼装置设置在与衬底处理室流体连通的流体控制组件内的安装基板和控制阀之间。减压装置能够抑制用于基板处理的工艺流体中的小压力扰动。

3. 发明申请

WO2013012675A2 METHODS AND APPARATUS FOR PROCESSING SUBSTRATES USING MODEL-BASED CONTROL 审中-公开
标题翻译：使用基于模型的控制处理基板的方法和设备
公开(公告)号：WO2013012675A2
公开(公告)日：2013-01-24
申请号：PCT/US2012/046452
申请日：2012-07-12
申请人： APPLIED MATERIALS, INC. , PORTHOUSE, Keith, Brian , LANE, John, W. , GREGOR, Mariusch , MERRY, Nir , RICE, Michael, R. , MINKOVICH, Alex , LI, Hongbin , DZILNO, Dmitry, A.
发明人： PORTHOUSE, Keith, Brian , LANE, John, W. , GREGOR, Mariusch , MERRY, Nir , RICE, Michael, R. , MINKOVICH, Alex , LI, Hongbin , DZILNO, Dmitry, A.
IPC分类号： H01L21/205 , H01L21/3065 , H01L21/02
CPC分类号： G05D16/2046 , G05B17/02 , H01L21/67017 , H01L21/67253
摘要： Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.
摘要翻译：这里公开了方法和装置。在一些实施例中，控制处理室的方法可以包括根据处理参数预先确定处理容积中的压力与排气阀的位置之间的关系; 将所述处理室设定为第一状态，所述第一状态具有所述处理容积中的第一压力和所述处理参数的第一值，其中基于所述预定关系将所述排气阀设定到第一位置以在所述第一值处产生所述第一压力; 当所述处理室从所述第一状态变为具有第二压力和第二处理参数值的第二状态时，确定压力控制分布以控制所述压力; 并且通过在将处理室改变到第二状态的同时改变排气阀的位置来施加压力控制曲线以控制压力。

4. 发明申请

WO2011085064A2 N-CHANNEL FLOW RATIO CONTROLLER CALIBRATION 审中-公开
标题翻译： N通道流量比控制器校准
公开(公告)号：WO2011085064A2
公开(公告)日：2011-07-14
申请号：PCT/US2011020316
申请日：2011-01-06
申请人： APPLIED MATERIALS INC , GREGOR MARIUSCH , LANE JOHN
发明人： GREGOR MARIUSCH , LANE JOHN
IPC分类号： H01L21/3065
CPC分类号： F17D3/00 , G01F25/003 , G01F25/0053 , Y10T137/0324 , Y10T137/0363 , Y10T137/0379 , Y10T137/0402 , Y10T137/2524 , Y10T137/2529
摘要： Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.
摘要翻译：本发明的实施例一般涉及控制蚀刻室中的气体流动的方法。该方法通常包括将单个处理气体供应源分成多个独立处理室的输入，使得每个室在均匀处理条件下处理基板。该方法通常包括使用质量流量控制器作为用于校准流量比率控制器的参考。可以确定量程校正因子以解释实际流量和通过流量比率控制器的测量流量之间的差异。量程校正因子可以用于使用在此提供的等式来确定流量控制器的每个通道的经校正的设定点。此外，流量比控制器的设定点可以使用在此提供的附加等式而与气体无关。

5. 发明申请

WO2011137071A3 METHODS AND APPARATUS FOR CALIBRATING FLOW CONTROLLERS IN SUBSTRATE PROCESSING SYSTEMS 审中-公开
标题翻译：用于在基板处理系统中校准流量控制器的方法和装置
公开(公告)号：WO2011137071A3
公开(公告)日：2012-03-01
申请号：PCT/US2011033780
申请日：2011-04-25
申请人： APPLIED MATERIALS INC , CRUSE JAMES P , LANE JOHN W , GREGOR MARIUSCH , BUCKIUS DUC , DARAN BERRIN , COBB CORIE LYNN , XU MING , NGUYEN ANDREW
发明人： CRUSE JAMES P , LANE JOHN W , GREGOR MARIUSCH , BUCKIUS DUC , DARAN BERRIN , COBB CORIE LYNN , XU MING , NGUYEN ANDREW
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： H01L21/67253 , F16K37/00 , F16K37/0091 , G01F25/00 , Y10T29/53022 , Y10T137/8158 , Y10T137/87153 , Y10T137/87684 , Y10T137/877
摘要： Methods and apparatus for calibrating a plurality of gas flows in a substrate processing system are provided herein. In some embodiments, a substrate processing system may include a cluster tool comprising a first process chamber and a second process chamber coupled to a central vacuum transfer chamber; a first flow controller to provide a process gas to the first process chamber; a second flow controller to provide the process gas to the second process chamber; a mass flow verifier to verify a flow rate from each of the first and second flow controllers; a first conduit to selectively couple the first flow controller to the mass flow verifier; and a second conduit to selectively couple the second flow controller to the mass flow verifier.
摘要翻译：本文提供了用于校准衬底处理系统中的多个气流的方法和装置。在一些实施例中，衬底处理系统可以包括簇工具，其包括耦合到中心真空传送室的第一处理室和第二处理室; 第一流量控制器，用于向第一处理室提供处理气体; 第二流量控制器，用于向第二处理室提供处理气体; 质量流量验证器，用于验证来自所述第一和第二流量控制器中的每一个的流量; 用于选择性地将第一流量控制器耦合到质量流量验证器的第一导管; 以及用于选择性地将第二流量控制器耦合到质量流量验证器的第二导管。

6. 发明申请

WO2011137071A2 METHODS AND APPARATUS FOR CALIBRATING FLOW CONTROLLERS IN SUBSTRATE PROCESSING SYSTEMS 审中-公开
标题翻译：用于在基板处理系统中校准流量控制器的方法和装置
公开(公告)号：WO2011137071A2
公开(公告)日：2011-11-03
申请号：PCT/US2011/033780
申请日：2011-04-25
申请人： APPLIED MATERIALS, INC. , CRUSE, James P. , LANE, John W. , GREGOR, Mariusch , BUCKIUS, Duc , DARAN, Berrin , COBB, Corie Lynn , XU, Ming , NGUYEN, Andrew
发明人： CRUSE, James P. , LANE, John W. , GREGOR, Mariusch , BUCKIUS, Duc , DARAN, Berrin , COBB, Corie Lynn , XU, Ming , NGUYEN, Andrew
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： H01L21/67253 , F16K37/00 , F16K37/0091 , G01F25/00 , Y10T29/53022 , Y10T137/8158 , Y10T137/87153 , Y10T137/87684 , Y10T137/877
摘要： Methods and apparatus for calibrating a plurality of gas flows in a substrate processing system are provided herein. In some embodiments, a substrate processing system may include a cluster tool comprising a first process chamber and a second process chamber coupled to a central vacuum transfer chamber; a first flow controller to provide a process gas to the first process chamber; a second flow controller to provide the process gas to the second process chamber; a mass flow verifier to verify a flow rate from each of the first and second flow controllers; a first conduit to selectively couple the first flow controller to the mass flow verifier; and a second conduit to selectively couple the second flow controller to the mass flow verifier.
摘要翻译：本文提供了用于校准衬底处理系统中的多个气流的方法和装置。在一些实施例中，衬底处理系统可以包括簇工具，其包括耦合到中心真空传送室的第一处理室和第二处理室; 第一流量控制器，用于向第一处理室提供处理气体; 第二流量控制器，用于向第二处理室提供处理气体; 质量流量验证器，用于验证来自所述第一和第二流量控制器中的每一个的流量; 用于选择性地将第一流量控制器耦合到质量流量验证器的第一导管; 以及用于选择性地将第二流量控制器耦合到质量流量验证器的第二导管。

7. 发明申请

WO2011085064A3 N-CHANNEL FLOW RATIO CONTROLLER CALIBRATION 审中-公开
公开(公告)号：WO2011085064A3
公开(公告)日：2011-07-14
申请号：PCT/US2011/020316
申请日：2011-01-06
申请人： APPLIED MATERIALS, INC. , GREGOR, Mariusch , LANE, John
发明人： GREGOR, Mariusch , LANE, John
IPC分类号： H01L21/3065
摘要： Embodiments of the present invention generally relate to methods of controlling gas flow in etching chambers. The methods generally include splitting a single process gas supply source into multiple inputs of separate process chambers, such that each chamber processes substrates under uniform processing conditions. The method generally includes using a mass flow controller as a reference for calibrating a flow ratio controller. A span correction factor may be determined to account for the difference between the actual flow and the measured flow through the flow ratio controller. The span correction factors may be used to determine corrected set points for each channel of the flow controller using equations provided herein. Furthermore, the set points of the flow ratio controller may be made gas-independent using additional equations provided herein.

8. 发明申请

WO2009152103A2 METHOD AND APPARATUS FOR DAMPENING PRESSURE FLUCTUATIONS IN A FLUID DELIVERY SYSTEM 审中-公开
标题翻译：用于减轻流体输送系统中的压力波动的方法和装置
公开(公告)号：WO2009152103A2
公开(公告)日：2009-12-17
申请号：PCT/US2009/046639
申请日：2009-06-08
申请人： APPLIED MATERIALS, INC. , LANE, John, William , GREGOR, Mariusch , VUKOTIC, Emir
发明人： LANE, John, William , GREGOR, Mariusch , VUKOTIC, Emir
IPC分类号： H01L21/00 , H01L21/02 , H01L21/3065 , H01L21/20
CPC分类号： F17D1/20 , F16L55/02754 , F16L55/055 , Y10T137/0396 , Y10T137/7922
摘要： A method and apparatus are provided for a cost effective pressure dampening device used in a fluid delivery system for substrate processing. In one embodiment, the pressure dampening device is disposed between a mounting substrate and a control valve within a fluid control assembly in fluid communication with a substrate processing chamber. The pressure dampening device is capable of dampening small pressure perturbations in a process fluid which is used for substrate processing.
摘要翻译：提供了一种用于在用于衬底处理的流体输送系统中使用的成本有效的压力衰减装置的方法和装置。在一个实施例中，减压装置设置在流体控制组件内的安装基板和控制阀之间，该流体控制组件与基板处理室流体连通。减压装置能够抑制用于基板处理的工艺流体中的小压力扰动。

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