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1. 发明申请

WO2008121134A1 HIGH DENSITY PLANAR MAGNETIC DOMAIN WALL MEMORY APPARATUS AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：高密度平面磁畴壁记忆装置及其形成方法
公开(公告)号：WO2008121134A1
公开(公告)日：2008-10-09
申请号：PCT/US2007/024798
申请日：2007-12-04
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GAIDIS, Michael, C. , CLEVENGER, Lawrence, A. , DALTON, Timothy, J. , DEBROSSE, John, K. , HSU, Louis, L., C. , RADENS, Carl , WONG, Keith, K., H. , YANG, Chih-Chao
发明人： GAIDIS, Michael, C. , CLEVENGER, Lawrence, A. , DALTON, Timothy, J. , DEBROSSE, John, K. , HSU, Louis, L., C. , RADENS, Carl , WONG, Keith, K., H. , YANG, Chih-Chao
IPC分类号： G11C19/08
CPC分类号： G11C19/0841 , B82Y10/00 , G11C5/02 , G11C11/161 , G11C11/1675 , Y10T29/53165
摘要： A magnetic domain wall memory apparatus with write/read capability includes a plurality of coplanar shift register structures each comprising an elongated track formed from a ferromagnetic material having a plurality of magnetic domains therein, the shift register structures further having a plurality of discontinuities therein to facilitate domain wall location; a magnetic read element associated with each of the shift register structures; and a magnetic write element associated with each of the shift register structures, the magnetic write element further comprising a single write wire having a longitudinal axis substantially orthogonal to a longitudinal axis of each of the coplanar shift register structures.
摘要翻译：具有写入/读取功能的磁畴壁存储装置包括多个共面移位寄存器结构，每个包括由其中具有多个磁畴的铁磁材料形成的细长轨道，移位寄存器结构还具有多个不连续性，以便于域墙位置; 与每个移位寄存器结构相关联的磁读取元件; 以及与所述移位寄存器结构中的每一个相关联的磁写元件，所述磁写入元件还包括单个写入线，所述单个写入线的纵轴基本上与所述共面移位寄存器结构中的每一个的纵向轴线正交。

2. 发明申请

WO2007008251A2 HARD MASK STRUCTURE FOR PATTERNING OF MATERIALS 审中-公开
标题翻译：用于材料图案的硬掩模结构
公开(公告)号：WO2007008251A2
公开(公告)日：2007-01-18
申请号：PCT/US2005044263
申请日：2005-12-07
申请人： IBM , GAIDIS MICHAEL C , KANAKASABAPATHY SIVANANDA K , O'SULLIVAN EUGENE J
发明人： GAIDIS MICHAEL C , KANAKASABAPATHY SIVANANDA K , O'SULLIVAN EUGENE J
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L43/12 , H01L21/0332 , H01L21/0337 , H01L27/11507 , H01L28/65
摘要： Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.
摘要翻译：提供了磁性器件制造技术。一方面，图案化至少一种，例如非挥发性材料的方法包括以下步骤。在待图案化材料的至少一个表面上形成硬掩模结构。硬掩模结构被配置为具有靠近材料的基部和与基部相对的顶部。基座具有大于硬掩模结构的顶部的一个或多个横向尺寸的一个或多个横向尺寸，使得基部的至少一部分横向延伸超过顶部的实质距离。硬掩模结构的顶部距离被蚀刻的材料比基底更大的垂直距离。材料被蚀刻。

3. 发明申请

WO2009023739A1 METHOD AND APPARATUS FOR FABRICATING SUB-LITHOGRAPHY DATA TRACKS FOR USE IN MAGNETIC SHIFT REGISTER MEMORY DEVICES 审中-公开
标题翻译：用于制作用于磁移位置存储器件的次数据轨迹的方法和装置
公开(公告)号：WO2009023739A1
公开(公告)日：2009-02-19
申请号：PCT/US2008/073066
申请日：2008-08-13
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , ASSEFA, Solomon , GAIDIS, Michael C. , JOSEPH, Eric A. , PARKIN, Stuart Stephen Papworth , TYBERG, Christy S.
发明人： ASSEFA, Solomon , GAIDIS, Michael C. , JOSEPH, Eric A. , PARKIN, Stuart Stephen Papworth , TYBERG, Christy S.
IPC分类号： B44C1/22
CPC分类号： H01L27/222 , B82Y10/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C19/0808 , H01L21/76816 , H01L43/08
摘要： In one embodiment, the invention is a method and apparatus for fabricating sub-lithography data tracks for use in magnetic shift register memory devices. One embodiment of a memory device includes a first stack of dielectric material formed of a first dielectric material, a second stack of dielectric material surrounding the first stack of dielectric material and formed of at least a second dielectric material, and at least one data track for storing information, positioned between the first stack of dielectric material and the second stack of dielectric material, the data track having a high aspect ratio and a substantially rectangular cross section.
摘要翻译：在一个实施例中，本发明是用于制造用于磁移位寄存器存储器件的子光刻数据磁道的方法和装置。存储器件的一个实施例包括由第一电介质材料形成的介电材料的第一叠层，围绕第一电介质材料堆叠并由至少第二电介质材料形成的第二电介质材料叠层，以及至少一个用于存储位于所述第一电介质材料堆叠和所述第二电介质材料堆之间的信息，所述数据轨道具有高纵横比和基本上矩形的横截面。

4. 发明申请

WO2007008251A3 HARD MASK STRUCTURE FOR PATTERNING OF MATERIALS 审中-公开
公开(公告)号：WO2007008251A3
公开(公告)日：2007-01-18
申请号：PCT/US2005/044263
申请日：2005-12-07
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GAIDIS, Michael, C. , KANAKASABAPATHY, Sivananda, K. , O'SULLIVAN, Eugene, J.
发明人： GAIDIS, Michael, C. , KANAKASABAPATHY, Sivananda, K. , O'SULLIVAN, Eugene, J.
IPC分类号： H01L21/00 , B44C1/22 , B05C1/00
摘要： Techniques for magnetic device (302) fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure (315), comprising thin hard mask layer (316) and thick hard mask layer (318) is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one~ or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.

5. 发明申请

WO2005010975A1 PLANAR MAGNETIC TUNNEL JUNCTION SUBSTRATE HAVING RECESSED ALIGNMENT MARKS 审中-公开
标题翻译：具有对准标记的平面磁铁隧道接头基板
公开(公告)号：WO2005010975A1
公开(公告)日：2005-02-03
申请号：PCT/US2003/019773
申请日：2003-06-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GAIDIS, Michael, C.
发明人： GAIDIS, Michael, C.
IPC分类号： H01L21/46
CPC分类号： H01L21/3212 , B82Y10/00 , H01L23/544 , H01L27/222 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method for forming an alignment mark structure (148) for a semiconductor device includes forming an alignment recess (130) at a selected level of the semiconductor device substrate. A first metal layer (140) is formed over the selected substrate level and within the alignment recess (130), wherein the alignment recess (130) is formed at a depth such that the first metal layer (140) only partially fills the alignment recess (130). A second metal layer (142) is formed over the first metal layer (140) such that the alignment recess (130) is completely filled. The second metal layer (142) and the first metal layer (140) are then planarized down to the selected substrate level, thereby creating a sacrificial plug (144) of the second layer material within the alignment recess. The sacrificial plug (144) is removed in a manner so as not to substantially roughen the planarized surface at the selected substrate level.
摘要翻译：一种用于形成用于半导体器件的对准标记结构（148）的方法包括在半导体器件衬底的选定级别形成对准凹槽（130）。第一金属层（140）形成在所选择的基底层上并且在对准凹槽（130）内，其中对准凹槽（130）形成在一定深度处，使得第一金属层（140）仅部分地填充对准凹槽（130）。在第一金属层（140）之上形成第二金属层（142），使得对准凹槽（130）被完全填充。然后将第二金属层（142）和第一金属层（140）平坦化到所选择的衬底水平，从而在对准凹槽内形成第二层材料的牺牲插塞（144）。以牺牲基板水平的平坦化表面粗糙化的方式去除牺牲塞（144）。

6. 发明申请

WO2007016047A3 METHOD AND STRUCTURE FOR FORMING SLOT VIA BITLINE FOR MRAM DEVICES 审中-公开
标题翻译：用于通过MRAM器件的位线形成槽的方法和结构
公开(公告)号：WO2007016047A3
公开(公告)日：2008-01-03
申请号：PCT/US2006028718
申请日：2006-07-24
申请人： IBM , GAIDIS MICHAEL C , RADENS CARL , CLEVENGER LAWRENCE A , DALTON TIMOTHY J , HSU LOUIS L C , WONG KEITH KWONG HON , YANG CHIH-CHAO
发明人： GAIDIS MICHAEL C , RADENS CARL , CLEVENGER LAWRENCE A , DALTON TIMOTHY J , HSU LOUIS L C , WONG KEITH KWONG HON , YANG CHIH-CHAO
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： B82Y10/00 , H01L27/222 , H01L43/12
摘要： A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.
摘要翻译：磁性随机存取存储器（MRAM）器件包括形成在下布线层上的磁隧道结（MTJ）堆叠，形成在MTJ堆叠上的硬掩模和形成在硬掩模上的上布线层。上布线层包括经由位于其中的位线的槽，槽经由与硬掩模接触的位线并与部分地围绕硬掩模的侧壁的蚀刻停止层接触。

7. 发明申请

WO2007024300A3 MAGNETIC DEVICES AND TECHNIQUES FOR FORMATION THEREOF 审中-公开
公开(公告)号：WO2007024300A3
公开(公告)日：2007-03-01
申请号：PCT/US2006/017418
申请日：2006-05-04
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , KANAKASABAPATHY, Sivananda K. , GAIDIS, Michael C.
发明人： KANAKASABAPATHY, Sivananda K. , GAIDIS, Michael C.
IPC分类号： H01L21/00 , H01L29/78 , H01L21/26 , H01L21/302
摘要： Techniques for forming a magnetic device (600) are provided. In one aspect, method of forming a via hole (616) self-aligned with a magnetic device (600) comprises the following steps. A dielectric layer (606) is formed over at least a portion of the magnetic device (600). The dielectric layer (606) is configured to have an underlayer (610) proximate to the magnetic device which comprises a first material, and an overlayer (612) on a side of the underlayer (61) opposite the magnetic device which comprises a second material. The first material is different from the second material. In a first etching phase, a first etchant is used to etch the dielectric layer, beginning with the overlayer (312) and through the overlayer (312). In a second etching phase, a second etchant which is selective for etching the underlayer (610) is used to etch the dielectric layer through the underlayer (610)

8. 发明申请

WO2007024300A2 MAGNETIC DEVICES AND TECHNIQUES FOR FORMATION THEREOF 审中-公开
标题翻译：磁性装置及其形成技术
公开(公告)号：WO2007024300A2
公开(公告)日：2007-03-01
申请号：PCT/US2006017418
申请日：2006-05-04
申请人： IBM , KANAKASABAPATHY SIVANANDA K , GAIDIS MICHAEL C
发明人： KANAKASABAPATHY SIVANANDA K , GAIDIS MICHAEL C
IPC分类号： H01L21/336
CPC分类号： H01L43/12 , H01L21/76897 , H01L27/222 , H01L43/08 , H01L2924/3011
摘要： Techniques for forming a magnetic device are provided. In one aspect, a method of forming a via hole self-aligned with a magnetic device comprises the following steps. A dielectric layer is formed over at least a portion of the magnetic device. The dielectric layer is configured to have an underlayer proximate to the magnetic device which comprises a first material, and an overlayer on a side of the underlayer opposite the magnetic device which comprises a second material. The first material is different from the second material. In a first etching phase, a first etchant is used to etch the dielectric layer, beginning with the overlayer, and through the overlayer. In a second etching phase, a second etchant which is selective for etching the underlayer is used to etch the dielectric layer through the underlayer.
摘要翻译：提供了用于形成磁性装置的技术。一方面，形成与磁性装置自对准的通孔的方法包括以下步骤。在磁性器件的至少一部分上形成电介质层。电介质层被配置为具有靠近磁性装置的底层，其包括第一材料，并且在与包括第二材料的磁性装置相对的底层的一侧上的覆盖层。第一种材料与第二种材料不同。在第一蚀刻阶段中，使用第一蚀刻剂来从覆盖层开始并通过覆盖层来蚀刻介电层。在第二蚀刻阶段中，使用用于蚀刻底层的第二蚀刻剂来蚀刻通过底层的介电层。

9. 发明申请

WO2007016047A2 METHOD AND STRUCTURE FOR FORMING SLOT VIA BITLINE FOR MRAM DEVICES 审中-公开
标题翻译：用于通过MRAM器件的位线形成槽的方法和结构
公开(公告)号：WO2007016047A2
公开(公告)日：2007-02-08
申请号：PCT/US2006/028718
申请日：2006-07-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GAIDIS, Michael, C. , RADENS, Carl , CLEVENGER, Lawrence, A. , DALTON, Timothy, J. , HSU, Louis, L.c. , WONG, Keith Kwong Hon , YANG, Chih-chao
发明人： GAIDIS, Michael, C. , RADENS, Carl , CLEVENGER, Lawrence, A. , DALTON, Timothy, J. , HSU, Louis, L.c. , WONG, Keith Kwong Hon , YANG, Chih-chao
IPC分类号： H01L29/94
CPC分类号： B82Y10/00 , H01L27/222 , H01L43/12
摘要： A magnetic random access memory (MRAM) device includes a magnetic tunnel junction (MTJ) stack formed over a lower wiring level, a hardmask formed on the MTJ stack, and an upper wiring level formed over the hardmask. The upper wiring level includes a slot via bitline formed therein, the slot via bitline in contact with the hardmask and in contact with an etch stop layer partially surrounding sidewalls of the hardmask.
摘要翻译：磁性随机存取存储器（MRAM）器件包括形成在下布线层上的磁隧道结（MTJ）堆叠，形成在MTJ堆叠上的硬掩模和形成在硬掩模上的上布线层。上布线层包括经由位于其中的位线的槽，槽经由与硬掩模接触的位线并与部分地围绕硬掩模的侧壁的蚀刻停止层接触。

10. 发明申请

WO2005010998A1 SELF-ALIGNED CONDUCTIVE LINES FOR FET-BASED MAGNETIC RANDOM ACCESS MEMORY DEVICES AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：用于基于FET的磁性随机存取存储器件的自对准导电线及其形成方法
公开(公告)号：WO2005010998A1
公开(公告)日：2005-02-03
申请号：PCT/US2003/019772
申请日：2003-06-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GAIDIS, Michael, C.
发明人： GAIDIS, Michael, C.
IPC分类号： H01L29/82
CPC分类号： G11C11/16 , H01L27/222 , H01L43/08 , H01L43/12
摘要： A conductive line structure for a field effect transistor (FET) based magnetic random access memory (MRAM) device includes a lateral metal strap (326) conductively coupled to a lower metallization line (302). A magnetic tunnel junction (MTJ) stack (316) is formed on the metal strap (326), and a metal shield (324) is formed over the MTJ stack (316), the metal shield (324) being self-aligned with respect to the metal strap (326). An upper metallization line (332) is conductively coupled to the metal shield (324), wherein the metal shield (324) serves as an etch stop during the formation of the upper metallization line (332).
摘要翻译：用于基于场效应晶体管（FET）的磁随机存取存储器（MRAM）器件的导线结构包括导电耦合到下金属化线（302）的侧金属带（326）。在金属带（326）上形成磁性隧道结（MTJ）堆叠（316），金属屏蔽（324）形成在MTJ堆叠（316）之上，金属屏蔽（324）相对于自对准到金属带（326）。上金属化线（332）导电耦合到金属屏蔽（324），其中金属屏蔽（324）在形成上金属化线（332）期间用作蚀刻停止。

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