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1. 发明申请

WO2013038346A1 NEAR INFRARED LIGHT SOURCE IN BULK SILICON 审中-公开
标题翻译：近红外光源大量硅
公开(公告)号：WO2013038346A1
公开(公告)日：2013-03-21
申请号：PCT/IB2012/054740
申请日：2012-09-12
申请人： INSIAVA (PTY) LIMITED , DU PLESSIS, Monuko , BOGALECKI, Alfons, Willi
发明人： DU PLESSIS, Monuko , BOGALECKI, Alfons, Willi
IPC分类号： H01L33/00 , H01L33/34
CPC分类号： H01L33/34 , H01L25/167 , H01L33/0054 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device (10) comprises a body (12) of a semiconductor material having a first face (14) and at least one other face (16) opposite to the first face. At least one pn-junction (18) in the body is located towards the first face and is reverse biased via contacts on the body into a light emitting mode, either in avalanche or field emission mode. The other face (16) of the body is configured to transmit from the body light emitted by the at least one pn-junction (18) in the near infrared part of the spectrum and having wavelengths longer than 1 μm.
摘要翻译：发光器件（10）包括具有第一面（14）和与第一面相对的至少一个另外的面（16）的半导体材料的本体（12）。身体中的至少一个pn结（18）朝向第一面定位，并且通过身体上的触点被反向偏置成以雪崩或场发射模式发光的模式。身体的另一个面（16）被配置为从身体的近红外部分中发射的至少一个pn结（18）发射的身体的光，并且具有长于1um的波长。

2. 发明申请

WO2009095886A3 SEMICONDUCTOR LIGHT EMITTING DEVICE COMPRISING HETEROJUNCTION 审中-公开
标题翻译：包含异质结的半导体发光器件
公开(公告)号：WO2009095886A3
公开(公告)日：2009-09-24
申请号：PCT/IB2009050378
申请日：2009-01-30
申请人： INSIAVA PTY LTD , SNYMAN LUKAS WILLEM , DU PLESSIS MONUKO
发明人： SNYMAN LUKAS WILLEM , DU PLESSIS MONUKO
IPC分类号： H01L33/00 , H01L33/02 , H01L33/34
CPC分类号： H01L33/34 , H01L33/0016 , H01L33/02
摘要： A semiconductor light emitting device (10) comprises a semiconductor structure (12) comprising a first body (14) of a first semiconductor material (in this case Ge) comprising a first region of a first doping kind (in this case n) and a second body (18) of a second semiconductor material (in this case Si) comprising a first region of a second doping kind (in this case p). The structure comprises a junction region (15) comprising a first heterojunction (16) formed between the first body (14) and the second body (18) and a pn junction (17) formed between regions of the structure of the first and second doping kinds respectively. A biasing arrangement (20) is connected to the structure for, in use, reverse biasing the pn junction, thereby to cause emission of light.
摘要翻译：半导体发光器件（10）包括半导体结构（12），该半导体结构包括第一半导体材料（在该情况下为Ge）的第一主体（14），该第一半导体材料包括第一掺杂类型的第一区域（在这种情况下为n）包括第二掺杂类型的第一区域（在这种情况下为p）的第二半导体材料（在这种情况下为Si）的第二主体（18）。该结构包括包含在第一主体（14）和第二主体（18）之间形成的第一异质结（16）和在第一和第二掺杂的结构的区域之间形成的pn结（17）的结区域种类。偏置装置（20）连接到该结构，用于在使用中反向偏置pn结，从而引起光的发射。

3. 发明申请

WO2009057075A2 OPTOELECTRONIC DEVICE WITH LIGHT DIRECTING ARRANGEMENT AND METHOD OF FORMING THE ARRANGEMENT 审中-公开
标题翻译：具有光导向布置的光电器件和形成布置的方法
公开(公告)号：WO2009057075A2
公开(公告)日：2009-05-07
申请号：PCT/IB2008054534
申请日：2008-10-31
申请人： INSIAVA PTY LTD , DU PLESSIS MONUKO , GREYVENSTEIN RAY FREDERICK , BOGALECKI ALFONS WILLI
发明人： DU PLESSIS MONUKO , GREYVENSTEIN RAY FREDERICK , BOGALECKI ALFONS WILLI
IPC分类号： H01L33/34 , H01L33/46 , H01L33/60
CPC分类号： H01L33/60 , G02B6/4214 , H01L27/14625 , H01L31/0232 , H01L31/02325 , H01L31/028 , H01L31/1812 , H01L33/34 , H01L33/46 , Y02E10/50
摘要： An optoelectronic device (20) comprises a body ( 14) of an indirect bandgap semiconductor material having a surface (16) and a photon active region (12) on one side of the surface. A fight directing arrangement (22) is formed integrally with the body on an opposite side of the surface.
摘要翻译：光电子器件（20）包括在表面的一侧上具有表面（16）和光子有源区（12）的间接带隙半导体材料的本体（14）。战斗引导装置（22）与主体在表面的相对侧一体地形成。

4. 发明申请

WO2009057075A3 OPTOELECTRONIC DEVICE WITH LIGHT DIRECTING ARRANGEMENT AND METHOD OF FORMING THE ARRANGEMENT 审中-公开
公开(公告)号：WO2009057075A3
公开(公告)日：2009-05-07
申请号：PCT/IB2008/054534
申请日：2008-10-31
申请人： INSIAVA (PTY) LTD , DU PLESSIS, Monuko , GREYVENSTEIN, Ray, Frederick , BOGALECKI, Alfons, Willi
发明人： DU PLESSIS, Monuko , GREYVENSTEIN, Ray, Frederick , BOGALECKI, Alfons, Willi
IPC分类号： H01L33/00 , H01L31/0232
摘要： An optoelectronic device (20) comprises a body ( 14) of an indirect bandgap semiconductor material having a surface (16) and a photon active region (12) on one side of the surface. A fight directing arrangement (22) is formed integrally with the body on an opposite side of the surface.

5. 发明申请

WO2006058349A1 DETONATOR DEVICE 审中-公开
标题翻译：雷管装置
公开(公告)号：WO2006058349A1
公开(公告)日：2006-06-01
申请号：PCT/ZA2005/000175
申请日：2005-11-24
申请人： THE UNIVERSITY OF PRETORIA , DU PLESSIS, Monuko , CONRADIE, Cornelius, du Plooy
发明人： DU PLESSIS, Monuko , CONRADIE, Cornelius, du Plooy
IPC分类号： F42B3/11 , F42B3/13 , F42B3/113 , F42B3/14 , F42B3/16
CPC分类号： F42B3/11 , F42B3/13
摘要： A method of making a detonating device which includes the steps of treating a substrate (1) to form a porous structure, impregnating the porous structure (14) at least partly with an oxidant (18) and forming at least one arrangement which, when actuated, transfers heat to the oxidant (18) to initiate the oxidant (18), integrally with the substrate (14).
摘要翻译：一种制造引爆装置的方法，包括以下步骤：处理基底（1）以形成多孔结构，至少部分地用氧化剂（18）浸渍多孔结构（14），并形成至少一个布置，当致动时将热量传递到氧化剂（18）以与衬底（14）一体地起始氧化剂（18）。

6. 发明申请

WO1996030952A1 INDIRECT BANDGAP SEMICONDUCTOR OPTOELECTRONIC DEVICE 审中-公开
标题翻译：间接带状半导体光电子器件
公开(公告)号：WO1996030952A1
公开(公告)日：1996-10-03
申请号：PCT/EP1996001357
申请日：1996-03-28
申请人： OCTROOIBUREAU KISCH N.V. , UNIVERSITY OF PRETORIA , SNYMAN, Lukas, Willem , AHARONI, Herzl , DU PLESSIS, Monuko
发明人： OCTROOIBUREAU KISCH N.V. , UNIVERSITY OF PRETORIA
IPC分类号： H01L33/00
CPC分类号： H01L33/34 , H01L33/0008 , H01L33/0033
摘要： An optoelectronic device (10) formed in a chip of an indirect bandgap semiconductor material such as silicon is disclosed and claimed. The device comprises a visibly exposed highly doped n region (16) embedded at the surface of an oppositely doped epitaxial layer (14), to form a first junction region (15) close to the surface of the epitaxial layer. When the junction region is reverse biased to beyond avalanche breakdown, the device acts as a light emitting device to the external environment. When it is reverse biased to just below avalanche breakdown it acts as a light detector. The device may further include a further junction region for generating or providing additional carriers in the first junction region, thereby to improve the performance of the device. This further junction can be multiplied to facilitate multi-input signal processing functions where the light emission from the first junction is a function of the electrical signals applied to the further junctions.
摘要翻译：公开并声称形成在诸如硅之类的间接带隙半导体材料的芯片中的光电器件（10）。该器件包括嵌入在相反掺杂的外延层（14）的表面处的可见曝光的高掺杂n +区（16），以形成靠近外延层表面的第一结区域（15）。当结区域被反向偏置超过雪崩击穿时，该器件用作到外部环境的发光器件。当它被反向偏置到刚好低于雪崩击穿时，其用作光检测器。器件还可以包括用于在第一结区域中产生或提供附加载流子的另一接合区域，从而提高器件的性能。可以将该另外的结点相乘以促进多输入信号处理功能，其中来自第一结的发光是施加到另外结的电信号的函数。

7. 发明申请

WO2010086798A1 MICROCHIP-BASED MOEMS AND WAVEGUIDE DEVICE 审中-公开
标题翻译：基于微波技术的卫星和波导装置
公开(公告)号：WO2010086798A1
公开(公告)日：2010-08-05
申请号：PCT/IB2010/050356
申请日：2010-01-27
申请人： INSIAVA (PTY) LIMITED , DU PLESSIS, Monuko , SNYMAN, Lukas, Willem
发明人： DU PLESSIS, Monuko , SNYMAN, Lukas, Willem
IPC分类号： G01B11/02 , G01N21/03
CPC分类号： G01N21/645 , G01F1/704 , G01N21/255
摘要： An electro-optical device 10 comprises a body 12 of a semiconductor material, such as silicon. A light source 14 is formed integrally in the body. The device comprises an associated light detector 16 and an optical path providing part 19 having a refractive index and extending between the light source 14 and the detector 16, to provide an optical path 18 having a path length. A sensor 20 cooperates with the optical path providing part 19 and is configured to modulate light emitted by the light source 14, by changing at least one of light absorption characteristics in the optical path by exposing a medium in the optical path to the emitted light, the path length and the refractive index.
摘要翻译：电光装置10包括诸如硅的半导体材料的主体12。光源14一体形成在本体中。该装置包括相关联的光检测器16和具有折射率并在光源14和检测器16之间延伸的光路提供部分19，以提供具有路径长度的光路18。传感器20与光路提供部分19配合，并且被配置为通过将光路中的介质暴露于发射的光来改变光路中的光吸收特性中的至少一个来调制由光源14发射的光，路径长度和折射率。

8. 发明申请

WO2009150628A1 SILICON LIGHT EMITTING DEVICE UTILIZING RADIATIVE CARRIER RECOMBINATION IN OXIDE 审中-公开
标题翻译：利用氧化物中放射性载体重整的硅光发射装置
公开(公告)号：WO2009150628A1
公开(公告)日：2009-12-17
申请号：PCT/IB2009/052498
申请日：2009-06-11
申请人： INSIAVA (PTY) LIMITED , DU PLESSIS, Monuko
发明人： DU PLESSIS, Monuko
IPC分类号： H01L33/00
CPC分类号： H01L33/0008 , H01L33/0037 , H01L33/20 , H01L33/34 , H01L33/343 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device (10) comprises a body (12) of a semiconductor material. A junction region (28) comprising a depletion region is formed between a first region (16) of the body of a first conductivity type and a second region (18) of the body of a second conductivity type. A mechanism (20) provides a preferential breakdown region in the junction region. A body (24) of an insulating material is located adjacent the preferential breakdown region. The junction is configured to be driven into a breakdown mode in at least the preferential breakdown region, for oppositely charged carriers to be generated and for the oppositely charged carriers to tunnel into the body (24) of an insulating material and in a recombination region (26) of the body (24) of an insulating material, to recombine and to generate light.
摘要翻译：发光器件（10）包括半导体材料的主体（12）。包括耗尽区的结区域（28）形成在第一导电类型的主体的第一区域（16）和第二导电类型的主体的第二区域（18）之间。机构（20）在接合区域中提供优先击穿区域。绝缘材料的主体（24）位于优先击穿区域附近。该结被配置为至少在优先击穿区域中被驱动成击穿模式，对于要产生相反电荷的载流子，并且对于带相反电荷的载流子隧道进入绝缘材料的主体（24）和复合区域 26）绝缘材料的本体（24），以重新组合并产生光。

9. 发明申请

WO2009093177A1 SEMICONDUCTOR LIGHT EMITTING DEVICE UTILISING PUNCH-THROUGH EFFECTS 审中-公开
标题翻译：半导体发光器件利用穿孔效应
公开(公告)号：WO2009093177A1
公开(公告)日：2009-07-30
申请号：PCT/IB2009/050209
申请日：2009-01-21
申请人： INSIAVA (PTY) LIMITED , DU PLESSIS, Monuko , SNYMAN, Lukas Willem
发明人： DU PLESSIS, Monuko , SNYMAN, Lukas Willem
IPC分类号： H01L33/00
CPC分类号： H01L33/0016 , H01L33/34
摘要： A light emitting device (10) comprises a body (12) of a semiconductor material. A first junction region (14) is formed in the body between a first region (12.1 ) of the body of a first doping kind and a second region (12.2) of the body of a second doping kind. A second junction region (16) is formed in the body between the second region (12.2) of the body and a third region (12.3) of the body of the first doping kind. A terminal arrangement (18) is connected to the body for, in use, reverse biasing the first junction region (14) into a breakdown mode and for forward biasing at least part (16.1) of the second junction region (16), to inject carriers towards the first junction region (14). The device (10) is configured so that a first depletion region (20) associated with the reverse biased first junction region (14) punches through to a second depletion region associated with the forward biased second junction region (16).
摘要翻译：发光器件（10）包括半导体材料的主体（12）。第一接合区域（14）在第一掺杂类型的主体的第一区域（12.1）和第二掺杂类型的主体的第二区域（12.2）之间的主体中形成。在本体的第二区域（12.2）和第一掺杂类型的主体的第三区域（12.3）之间的主体中形成第二接合区域（16）。端子装置（18）连接到主体，用于在使用时将第一接合区域（14）反向偏置成击穿模式并且用于向第二接合区域（16）的至少一部分（16.1）进行偏置，以便将其注入载体朝向第一接合区域（14）。器件（10）被配置为使得与反向偏置的第一接合区域（14）相关联的第一耗尽区域（20）穿过与正向偏置的第二接合区域（16）相关联的第二耗尽区域。

10. 发明申请

WO2009047716A1 SILICON LIGHT EMITTING DEVICE WITH CARRIER INJECTION 审中-公开
标题翻译：具有载体注射的硅光发射装置
公开(公告)号：WO2009047716A1
公开(公告)日：2009-04-16
申请号：PCT/IB2008/054122
申请日：2008-10-08
申请人： INSIAVA (PTY) LIMITED , DU PLESSIS, Monuko
发明人： DU PLESSIS, Monuko
IPC分类号： H01L33/00 , H01L27/15
CPC分类号： H01L33/34 , H01L27/15 , H01L33/0008 , H01L33/0016 , H01L33/54
摘要： A light emitting device (10) comprises a first body (12) of an indirect bandgap semiconductor material. A first junction region (18) in the body is formed between a first region (12.1 ) of the body of a first doping kind and a second region (12.2) of the body of a second doping kind. A second junction (20) region in the body is formed between the second region of the body and a third region of the body of the first doping kind. The first and second junction regions being spaced from one another by not further than a minority carrier diffusion length. A terminal arrangement is connected to the first, second and third regions of the body for, in use, reverse biasing the first junction region into avalanche or field emission mode and for forward biasing the second junction region to inject carriers into the first junction region. A second body (22) of an isolation material is located immediately adjacent at least one wall of the third region, thereby to reduce parasitic injection from the third region.
摘要翻译：发光器件（10）包括间接带隙半导体材料的第一本体（12）。主体中的第一接合区域（18）形成在第一掺杂类型的主体的第一区域（12.1）和第二掺杂类型的主体的第二区域（12.2）之间。主体的第二结区（20）区域形成在主体的第二区域和第一掺杂类型的主体的第三区域之间。第一和第二结区彼此间隔不超过少数载流子扩散长度。端子装置连接到主体的第一，第二和第三区域，用于在使用时将第一接合区域反向偏置成雪崩或场致发射模式，并且用于向前偏置第二接合区域以将载流子注入第一接合区域。隔离材料的第二主体（22）紧邻第三区域的至少一个壁，从而减少从第三区域的寄生注入。

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