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    • 3. 发明申请
    • ALD SYSTEMS AND METHODS
    • ALD系统和方法
    • WO2010098875A2
    • 2010-09-02
    • PCT/US2010/000590
    • 2010-02-26
    • CAMBRIDGE NANOTECH INC.DEGUNS, Eric, W.SUNDARAM, Ganesh, M.COUTU, Roger, R.BECKER, Jill, Svenja
    • DEGUNS, Eric, W.SUNDARAM, Ganesh, M.COUTU, Roger, R.BECKER, Jill, Svenja
    • C23C16/44C23C16/00
    • C23C16/4401C23C16/45504C23C16/45546C23C16/45582
    • A gas deposition system (1000) configured as a dual-chamber "tower" includes a frame (1140) for supporting two reaction chamber assemblies (3000) , one vertically above the other. Each chamber assembly (3000) includes an outer wall assembly surrounding a hollow chamber (3070) sized to receive a single generation 4.5 (GEN 4.5) glass plate substrate through a load port. The substrate is disposed horizontally inside the hollow chamber (3070) and the chamber assembly (3000) includes removable and cleanable triangular shaped input (3150) and output (3250) plenums disposed external to the hollow chamber (3070) and configured to produce substantially horizontally directed laminar gas flow over a top surface of the substrate. Each chamber includes a cleanable and removable chamber liner assembly (6000) disposed inside the hollow chamber (3070) to contain precursor gases therein thereby preventing contamination of chamber outer walls (3010, 3020, 3030, 3040).
    • 构造为双室“塔”的气体沉积系统(1000)包括用于支撑两个反应室组件(3000)的框架(1140),一个垂直地在另一个上方。 每个室组件(3000)包括围绕中空室(3070)的外壁组件,该中空室(3070)的尺寸适于通过负载端口接纳单一的4.5(GEN 4.5)玻璃板基板。 基板被水平地设置在中空室(3070)内,并且室组件(3000)包括设置在中空室(3070)外部的可移除和可清洁的三角形输入(3150)和输出(3250)增压室,并且构造成基本上水平地 定向层流气体流过衬底的顶表面。 每个室包括设置在中空室(3070)内部的可清洁且可移除的室衬套组件(6000),以在其中容纳前体气体,从而防止室外壁(3010,3020,3030,3040)的污染。
    • 4. 发明申请
    • ALD SYSTEMS AND METHODS
    • ALD系统和方法
    • WO2010098875A3
    • 2010-10-21
    • PCT/US2010000590
    • 2010-02-26
    • CAMBRIDGE NANOTECH INCDEGUNS ERIC WSUNDARAM GANESH MCOUTU ROGER RBECKER JILL SVENJA
    • DEGUNS ERIC WSUNDARAM GANESH MCOUTU ROGER RBECKER JILL SVENJA
    • H01L29/76C23C16/00
    • C23C16/4401C23C16/45504C23C16/45546C23C16/45582
    • A gas deposition system (1000) configured as a dual-chamber "tower" includes a frame (1140) for supporting two reaction chamber assemblies (3000), one vertically above the other. Each chamber assembly (3000) includes an outer wall assembly surrounding a hollow chamber (3070) sized to receive a single generation 4.5 (GEN 4.5) glass plate substrate through a load port. The substrate is disposed horizontally inside the hollow chamber (3070) and the chamber assembly (3000) includes removable and cleanable triangular shaped input (3150) and output (3250) plenums disposed external to the hollow chamber (3070) and configured to produce substantially horizontally directed laminar gas flow over a top surface of the substrate. Each chamber includes a cleanable and removable chamber liner assembly (6000) disposed inside the hollow chamber (3070) to contain precursor gases therein thereby preventing contamination of chamber outer walls (3010, 3020, 3030, 3040).
    • 构造为双室“塔”的气体沉积系统(1000)包括用于支撑两个反应室组件(3000)的框架(1140),一个垂直地在另一个之上。 每个腔室组件(3000)包括围绕中空腔室(3070)的外壁组件,所述中空腔室的尺寸被设计为通过加载端口接收单代4.5(GEN 4.5)玻璃板基底。 基板水平地布置在中空室(3070)内部,并且室组件(3000)包括可移除且可清洁的三角形输入(3150)和输出(3250)增压室,其布置在中空室(3070)外部并且构造成基本上水平 定向层流气体流过衬底的顶部表面。 每个腔室包括设置在中空腔室(3070)内的可清洁和可移除的腔室衬里组件(6000),以在其中容纳前驱物气体,从而防止腔室外壁(3010,3020,3030,3040)的污染。