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1. 发明申请

WO2017019978A1 LOW NOISE TRANS-IMPEDANCE AMPLIFIERS BASED ON COMPLEMENTARY CURRENT FIELD-EFFECT TRANSISTOR DEVICES 审中-公开
标题翻译：基于互补电流场效应晶体管器件的低噪声阻抗放大器
公开(公告)号：WO2017019978A1
公开(公告)日：2017-02-02
申请号：PCT/US2016/044787
申请日：2016-07-29
申请人： CIRCUIT SEED, LLC
发明人： SCHOBER, Susan, Marya , SCHOBER, Robert, C.
IPC分类号： H03F1/08 , H03F3/45 , H03F3/08 , H03F3/68
CPC分类号： H03F3/45183 , H01L29/4238 , H01L29/78 , H03F1/083 , H03F1/223 , H03F3/082 , H03F3/193 , H03F3/195 , H03F3/211 , H03F3/3022 , H03F3/45475 , H03F2200/294 , H03F2200/451 , H03F2203/45246 , H03F2203/45692 , H03K19/018557
摘要： The present invention relates to a novel and inventive compound device structure for a low noise current amplifier or trans-impedance amplifier. The trans-impedance amplifier includes an amplifier portion, which converts current input into voltage using a complimentary pair of novel n-type and p-type current field-effect transistors (NiFET and PiFET), and a bias generation portion using another complimentary pair of NiFET and PiFET. Trans-impedance of NiFET and PiFET and its gain may be configured and programed by a ratio of width (W) over length (L) of source channel over the width (W) over length (L) of drain channel (W/L of source channel / W/L of drain channel).
摘要翻译：本发明涉及一种用于低噪声电流放大器或跨阻抗放大器的新型和本发明的复合器件结构。跨阻放大器包括放大器部分，其使用一对新颖的n型和p型电流场效应晶体管（NiFET和PiFET）将电流输入转换成电压，以及使用另一对互补的对 NiFET和PiFET。 NiFET和PiFET的反阻抗及其增益可以通过源极通道的宽度（W）与漏极通道的长度（L）之间的宽度（W）的比（W / L）来配置和编程源极通道/漏极通道的W / L）。

2. 发明申请

WO2019183174A1 CHARGE TRANSFER LOGIC (CTL) USING COMPLEMENTARY CURRENT FIELD EFFECT TRANSISTOR DEVICES (CIFET) AND / OR COMPLEMENTARY SWITCHED CURRENT FIELD EFFECT TRANSISTOR DEVICES (CsiFET) 审中-公开
公开(公告)号：WO2019183174A1
公开(公告)日：2019-09-26
申请号：PCT/US2019/023094
申请日：2019-03-20
申请人： CIRCUIT SEED, LLC
发明人： SCHOBER, Susan, Marya , SCHOBER, Robert, C. , RICHARDS, Timothy, Howard , HUDRLIK, Terrence, R. , CURRY, Aaron
IPC分类号： H01L21/8238 , H01L27/092
摘要： The present invention relates to novel inventive compound device structures, enabling charged- based logic gates. In particular, a switched p-channel and/or n-channel current field effect transistor, a solid state device based on a complimentary pair of a switched p-channel and n- channel current field effect transistors, and/or a solid state device based on a complimentary pair of a p-channel and n-channel current field effect transistors are used for constructing such logic gates. The switched current field effect transistor comprising a source and a drain, wherein the source and drain defines a channel, a diffusion that divides the channel into a source channel segment between the source and the diffusion and a drain channel segment between the drain and the diffusion, a source channel gate that is coupled to the source channel, and a drain channel gate that coupled to the drain channel. These novel device structures provide various improvements over the conventional devices.

3. 发明申请

WO2017019973A1 MULTI-STAGE AND FEED FORWARD COMPENSATED COMPLEMENTARY CURRENT FIELD EFFECT TRANSISTOR AMPLIFIERS 审中-公开
标题翻译：多级和馈线前向补偿补偿电流场效应晶体管放大器
公开(公告)号：WO2017019973A1
公开(公告)日：2017-02-02
申请号：PCT/US2016/044770
申请日：2016-07-29
申请人： CIRCUIT SEED, LLC
发明人： SCHOBER, Susan, Marya , SCHOBER, Robert, C.
IPC分类号： H03F1/08
CPC分类号： H03F3/45183 , H01L29/4238 , H01L29/772 , H01L29/78 , H03F1/083 , H03F3/3022 , H03F3/45475 , H03F2203/45246 , H03F2203/45692 , H03K19/00384
摘要： The present invention relates to a multi-stage and feed forward compensated complimentary current field effect transistor amplifiers, enabling a charge-based approach that takes advantage of the exponential properties incurred in sub-threshold operation. A plurality of complimentary pairs of novel current field effect transistors are connected in series to form a multi-stage amplifier.
摘要翻译：本发明涉及多级和前馈补偿的互补电流场效应晶体管放大器，使得能够利用在次阈值操作中引发的指数特性的基于电荷的方法。多个互补的新颖电流场效应晶体管串联连接以形成多级放大器。

4. 发明申请

WO2020102663A1 VECTOR NETWORK ANALYZER USING COMPLEMENTARY CURRENT-INJECTION FIELD-EFFECT TRANSISTOR (CiFET) DEVICES 审中-公开
公开(公告)号：WO2020102663A1
公开(公告)日：2020-05-22
申请号：PCT/US2019/061695
申请日：2019-11-15
申请人： CIRCUIT SEED, LLC
发明人： HUDRLIK, Terrence, R. , SCHOBER, Susan, Marya , SCHOBER, Robert, C. , HURLIK, Daniel, C.
IPC分类号： G01R27/28
摘要： This invention relates to a unique compact vector network analyzer (VNA) that uses current to excite a device under test (DUT). The current through the DUT is terminated / received by a complementary current-injection field-effect transistor (CiFET) which is used to convert the current through the DUT into a voltage which is, then, compared to a differential voltage across the DUT for determining the phase relationships along with amplitude. The simplified VNA can be arrayed to further extend the VNA characterization data set for analysis.

5. 发明申请

WO2018200482A4 TRACK AND HOLD CIRCUIT 审中-公开
公开(公告)号：WO2018200482A4
公开(公告)日：2018-11-01
申请号：PCT/US2018/029084
申请日：2018-04-24
申请人： CIRCUIT SEED, LLC
发明人： SCHOBER, Susan Marya , SCHOBER, Robert C.
IPC分类号： G11C27/02 , H03M1/12
摘要： The present invention relates to an improvement to a track and hold circuit. A jitter-free track and hold function independent of signal amplitude is achieved by a circuit which fixes the sample voltage to the charge on a flying sampling capacitor and sets maintains that charge prior to isolation through applying application of the sample voltage to a utilization circuit. This may be done by adding an extra switch to the standard track and hold circuit and operating the switches in a timed sequence manner to provide the sample aperture based on the charge on the flying sampling capacitor common to the circuit.

6. 发明申请

WO2018098389A1 LOW NOISE SENSOR AMPLIFIERS AND TRANS-IMPEDANCE AMPLIFIERS USING COMPLEMENTARY PAIR OF CURRENT INJECTION FIELD-EFFECT TRANSISTOR DEVICES 审中-公开
公开(公告)号：WO2018098389A1
公开(公告)日：2018-05-31
申请号：PCT/US2017/063180
申请日：2017-11-24
申请人： CIRCUIT SEED, LLC
发明人： SCHOBER, Susan, Marya , SCHOBER, Robert, C. , HUDRLIK, Terrence, R.
IPC分类号： H03F1/26 , H03F3/45
摘要： This invention relates to low noise sensor amplifiers and trans-impedance amplifiers using a complementary pair of current injection field effect transistor (iFET) devices (CiFET). CiFET includes a N-type current field-effect transistor (NiFET) and a P-type current field-effect transistor (PiFET), each of the NiFET and PiFET has a source, a drain, a gate, and a diffusion (current injection) terminal (iPort). Each iFET also has a source channel with a width and a length between the source and diffusion terminal, and drain channel with a width and a length between the drain and the diffusion terminal. A trans-impedance of the CiFET device is adjusted by a ratio of width / length of source channel over width / length of drain channel of the iFET and supply power voltage. In one configuration, the gate terminals of the NiFET and PiFET are connected together to form a common gate. In another configuration that common gate is configured as a voltage input for a high input impedance mode. Output voltage swings around a common mode voltage.

7. 发明申请

WO2017106835A1 SCALABLE INTEGRATED DATA CONVERTER 审中-公开
标题翻译：可扩展的集成数据转换器
公开(公告)号：WO2017106835A1
公开(公告)日：2017-06-22
申请号：PCT/US2016/067529
申请日：2016-12-19
申请人： CIRCUIT SEED, LLC
发明人： SCHOBER, Susan, Marya , SCHOBER, Robert, C.
IPC分类号： H03M1/12 , H03M1/66
CPC分类号： H03M1/12 , H03M1/66
摘要： The present invention relates to an integrated data converter, in particular analog to digital converters (ADC) and digital to analog converters (DAC), using a charge-based approach. Complimentary pairs of current field effect transistors are used to form amplifiers for forming scalable ADCs and DACs are disclosed, including successive approximation data converters (ADCs and DACs), and pipe-lined data converters (ADCs and DACs).
摘要翻译：本发明涉及使用基于电荷的方法的集成数据转换器，特别是模数转换器（ADC）和数模转换器（DAC）。免费的电流场效应晶体管对用于形成用于形成可扩展ADC的放大器，并且公开了包括逐次逼近数据转换器（ADC和DAC）和管线数据转换器（ADC和DAC）的DAC。

8. 发明申请

WO2018200482A1 TRACK AND HOLD CIRCUIT 审中-公开
公开(公告)号：WO2018200482A1
公开(公告)日：2018-11-01
申请号：PCT/US2018/029084
申请日：2018-04-24
申请人： CIRCUIT SEED, LLC
发明人： SCHOBER, Susan Marya , SCHOBER, Robert C.
IPC分类号： G11C27/02 , H03M1/12
CPC分类号： G11C27/026
摘要： The present invention relates to an improvement to a track and hold circuit. A jitter-free track and hold function independent of signal amplitude is achieved by a circuit which fixes the sample voltage to the charge on a flying sampling capacitor and sets maintains that charge prior to isolation through applying application of the sample voltage to a utilization circuit. This may be done by adding an extra switch to the standard track and hold circuit and operating the switches in a timed sequence manner to provide the sample aperture based on the charge on the flying sampling capacitor common to the circuit.

9. 发明申请

WO2017105554A1 SUPER-SATURATION CURRENT FIELD EFFECT TRANSISTOR AND TRANS-IMPEDANCE MOS DEVICE 审中-公开
标题翻译：超饱和电流场效应晶体管和TRANS-IMPEDANCE MOS器件
公开(公告)号：WO2017105554A1
公开(公告)日：2017-06-22
申请号：PCT/US2016/044800
申请日：2016-07-29
申请人： CIRCUIT SEED, LLC
发明人： SCHOBER, Susan, Marya , SCHOBER, Robert, C.
IPC分类号： H01L21/8238 , H01L27/092
CPC分类号： H01L27/092 , H01L21/823814 , H01L27/0207 , H03F1/086 , H03F3/04 , H03F3/45179 , H03F2203/45246
摘要： The present invention relates to an improvement to a current field effect transistor and trans-impedance MOS devices based on a novel and inventive compound device structure, enabling a charge-based approach that takes advantage of sub-threshold operation, for designing analog CMOS circuits. The present invention further relates to a super-saturation current field effect transistor (xiFET), having a source, a drain, a diffusion, a first gate, and a second gate terminals, in which a source channel is defined between the source and diffusion terminals, a drain channel is defined between the drain and diffusion terminals. The first gate terminal is capacitively coupled to the source channel; and the second gate terminal is capacitively coupled to said drain channel. The diffusion terminal receives a current causing change in diffused charge density throughout said source and drain channel. The xiFET provides a fundamental building block for designing various analog circuites.
摘要翻译：本发明涉及基于新颖且创造性的复合器件结构对当前场效应晶体管和跨阻抗MOS器件的改进，使得能够利用基于电荷的方法利用亚阈值操作，用于设计模拟CMOS电路。本发明进一步涉及具有源极，漏极，扩散，第一栅极和第二栅极端子的超饱和电流场效应晶体管（xiFET），其中源极沟道被限定在源极和扩散极之间在漏极和扩散端子之间限定漏极沟道。第一栅极端子电容耦合到源极沟道; 并且第二栅极端子电容耦合到所述漏极沟道。扩散终端接收电流，引起遍及所述源极和漏极沟道的扩散电荷密度的变化。 xiFET为设计各种模拟电路提供了一个基本构建模块。

10. 发明申请

WO2017019981A1 REFERENCE GENERATOR AND CURRENT SOURCE TRANSISTOR BASED ON COMPLEMENTARY CURRENT FIELD-EFFECT TRANSISTOR DEVICES 审中-公开
标题翻译：基于补偿电流场效应晶体管器件的参考发生器和电流源晶体管
公开(公告)号：WO2017019981A1
公开(公告)日：2017-02-02
申请号：PCT/US2016/044792
申请日：2016-07-29
申请人： CIRCUIT SEED, LLC
发明人： SCHOBER, Susan, Marya , SCHOBER, Robert, C.
IPC分类号： H01L21/8238 , H01L27/02
CPC分类号： G05F3/245 , H01L27/092
摘要： Existing proportional to absolute temperature (PTAT)/ complementary-to-absolute-temperature (CTAT) reference voltage circuit requires a large components count and foot print, precise device matching for accuracy and unsatisfactory sensitivity error or variation to temperature and humidity. The present invention relates to a novel approach for such reference voltage circuit based on a self-biased complementary pair of n-type and p-type current field-effect transistors, which provides rail PTAT, rail CTAT and analog reference voltages.
摘要翻译：与绝对温度（PTAT）/互补绝对温度（CTAT）参考电压电路成比例的现有成分需要大量的元件数量和脚印，精确的器件匹配精度和不令人满意的灵敏度误差或温度和湿度的变化。本发明涉及一种基于n型和p型电流场效应晶体管的自偏置互补对的这种基准电压电路的新方法，其提供轨道PTAT，轨道CTAT和模拟参考电压。

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