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1. 发明申请

WO2005067547A2 DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES EXHIBITING MAGNETORESISTANCE 审中-公开
标题翻译：稀释磁性半导体纳米光栅展示磁性材料
公开(公告)号：WO2005067547A2
公开(公告)日：2005-07-28
申请号：PCT/US2005001415
申请日：2005-01-14
申请人： UNIV CALIFORNIA , YANG PEIDONG , CHOI HEON-JIN , LEE SANG-KWON , HE RONGRUI , ZHANG YANGFENG , KUYKENDAL TEVYE , PAUZAUSKIE PETER
发明人： YANG PEIDONG , CHOI HEON-JIN , LEE SANG-KWON , HE RONGRUI , ZHANG YANGFENG , KUYKENDAL TEVYE , PAUZAUSKIE PETER
IPC分类号： H01L33/18
CPC分类号： C01B21/0602 , B82Y25/00 , B82Y30/00 , C01B21/0632 , C01P2002/01 , C01P2002/54 , C01P2002/85 , C01P2004/03 , C01P2004/16 , C01P2006/40 , C01P2006/42 , H01L33/18 , Y10S438/931 , Y10S977/762
摘要： A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga1-xMnxN (x=0.07) were synthesized. The nanowires, which have diameters of ~ 10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.
摘要翻译：公开了一种用于通过提供催化剂涂覆的基底并使基底的至少一部分经受半导体制造稀磁半导体（DMS）纳米线的方法，以及通过基于氯化物的蒸汽输运的掺杂剂来合成纳米线。使用这种新型的基于氯化物的化学气相传输方法，合成了单晶稀释磁半导体纳米线Ga1-xMnxN（x = 0.07）。具有约10nm至100nm直径和高达几十微米的直径的纳米线显示出具有高于室温的居里温度的铁磁性，高达250开尔德的磁致电阻。

2. 发明申请

WO2009054575A1 NERVOUS DEVICE USING AT LEAST ONE NANO-WIRE 审中-公开
标题翻译：使用至少一根纳米线的神经设备
公开(公告)号：WO2009054575A1
公开(公告)日：2009-04-30
申请号：PCT/KR2008/000933
申请日：2008-02-18
申请人： INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY , PARK, Seung Han , HONG, Jong Il , CHOI, Jae Young , CHOI, Heon Jin
发明人： PARK, Seung Han , HONG, Jong Il , CHOI, Jae Young , CHOI, Heon Jin
IPC分类号： B82B3/00
CPC分类号： A61N1/0558 , A61N1/0541 , A61N1/36036 , B82Y5/00
摘要： The present invention relates to a neural device comprising wires transmitting and receiving electric signals. More specifically, the present invention relates to a structure of the neural device comprising wires which effectively obtain electric signals developed in nerve fibers and transmit electric stimuli to the nerve fibers. The neural device according to the present invention is connected to a processing module processing electric signals detected from nerve fibers, and the neural device is inserted in nerve fibers via nanowires to obtain electric signals from the nerve fibers, or inserted in the nerve fibers to transmit electric stimuli. The neural device may further provide with at least one through-hole and support. The neural device according to the present invention has an advantage that may obtain electric signals without killing nerve fibers or provide them with electric stimuli.
摘要翻译：本发明涉及一种包含电线发送和接收电信号的神经装置。更具体地，本发明涉及包含有效地获得在神经纤维中产生的电信号并将电刺激传递给神经纤维的导线的神经装置的结构。根据本发明的神经装置连接到处理模块，处理从神经纤维检测的电信号，并且神经装置通过纳米线插入神经纤维中以从神经纤维获得电信号，或插入到神经纤维中以传输电刺激。神经装置还可以提供至少一个通孔和支撑件。根据本发明的神经元装置具有可以在不消除神经纤维或为其提供电刺激的情况下获得电信号的优点。

3. 发明申请

WO2005067547A3 DILUTED MAGNETIC SEMICONDUCTOR NANOWIRES EXHIBITING MAGNETORESISTANCE 审中-公开
公开(公告)号：WO2005067547A3
公开(公告)日：2005-07-28
申请号：PCT/US2005/001415
申请日：2005-01-14
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , YANG, Peidong , CHOI, Heon-Jin , LEE, Sang-Kwon , HE, Rongrui , ZHANG, Yanfeng , KUYKENDAL, Tevye , PAUZAUSKIE, Peter
发明人： YANG, Peidong , CHOI, Heon-Jin , LEE, Sang-Kwon , HE, Rongrui , ZHANG, Yanfeng , KUYKENDAL, Tevye , PAUZAUSKIE, Peter
IPC分类号： H01L21/02
摘要： A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga 1-x Mn x N (x=0.07) were synthesized. The nanowires, which have diameters of ∼ 10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

4. 发明申请

WO2005088293A1 NANOWIRE ASSISTED LASER DESORPTION/IONIZATION MASS SPECTROMETRIC ANALYSIS 审中-公开
标题翻译：纳米辅助激光解吸/离子质谱分析
公开(公告)号：WO2005088293A1
公开(公告)日：2005-09-22
申请号：PCT/KR2005/000738
申请日：2005-03-15
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , CHOI, Heon Jin , PYUN, Jae Chul
发明人： CHOI, Heon Jin , PYUN, Jae Chul
IPC分类号： G01N27/62
CPC分类号： H01J49/0418
摘要： This invention relates to a nanowire-assisted method for mass spectrometric analysis of a specimen. More specifically, by using nanowire which can fix a specimen and perform desorption/ionization of the specimen while effectively transferring laser energy to the specimen to be irradiated, thereby enabling to perform mass spectrometric analysis without using a matrix solution. This invention, by effectively performing desorption/ ionization of a specimen using the above-mentioned nanowire, enables to effectively perform qualitative-, quantitative-, and micro- analyses of specimens as well as low molecular weighted specimens. Further, this invention enables to the typical device of mass spectrometric analysis used in MALDI-T of MS. In particular, this invention can perform mass spectrometric analysis of a specimen with molecular weight of less than 1,000 Da and perform quantitative analysis by fixing a specimen with a predetermined area.
摘要翻译：本发明涉及一种用于样品的质谱分析的纳米线辅助方法。更具体地说，通过使用可固定样品的纳米线，并且能够将激光能量有效地转移到待照射的样品上，从而能够进行质谱分析而不使用基质溶液，从而进行试样的解吸/电离。本发明通过使用上述纳米线有效地进行样品的解吸/电离，能够有效地进行试样和低分子加权试样的定性，定量和微观分析。此外，本发明使得能够在MS的MALDI-T中使用的典型的质谱分析装置。特别地，本发明可以对分子量小于1000Da的样品进行质谱分析，并通过固定具有预定面积的样品进行定量分析。

5. 发明申请

WO2005085809A1 NANOWIRE LIGHT SENSOR AND KIT WITH THE SAME 审中-公开
标题翻译： NANOWIRE光传感器和套件
公开(公告)号：WO2005085809A1
公开(公告)日：2005-09-15
申请号：PCT/KR2005/000646
申请日：2005-03-08
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , PYUN, Jae-Chul , CHOI, Heon-Jin
发明人： PYUN, Jae-Chul , CHOI, Heon-Jin
IPC分类号： G01N21/64
CPC分类号： G01N21/76 , G01N33/5438 , G01N33/581 , G01N33/582 , H01L31/035281 , H01L31/09 , H01L31/1025 , Y02E10/50
摘要： Disclosed is a nanowire light sensor using a phenomenon that ,resistance of the nanowire is reduced by light with a specific wavelength. In addition, provided is a rapid test kit for immunoassay using the nanowire light sensor and an immunoassay principle using chemifluorescence and chemiluminescence. In addition, provided are a nanowire protein chip and a gene chip using the nanowire light sensor in a micro array form as a method for detecting chemifluorescence and chemiluminescence.
摘要翻译：公开了一种纳米线光传感器，其使用通过特定波长的光减少纳米线的电阻的现象。另外，提供了使用纳米线光传感器的免疫测定的快速测试试剂盒和使用化学荧光和化学发光的免疫测定原理。此外，提供了纳米线蛋白芯片和使用微阵列形式的纳米线光传感器作为检测化学荧光和化学发光的方法的基因芯片。

6. 发明申请

WO2006137631A1 FABRICATION METHOD OF GALLIUM MANGANESE NITRIDE SINGLE CRYSTAL NANOWIRE 审中-公开
标题翻译：甘蓝型单晶纳米晶的制造方法
公开(公告)号：WO2006137631A1
公开(公告)日：2006-12-28
申请号：PCT/KR2005/004374
申请日：2005-12-19
申请人： KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , BYEUN, Yun-Ki , HAN, Kyong Sop , SEONG, Han Kyu , CHOI, Heon Jin , CHOI, Sung Churl
发明人： BYEUN, Yun-Ki , HAN, Kyong Sop , SEONG, Han Kyu , CHOI, Heon Jin , CHOI, Sung Churl
IPC分类号： C22C29/16 , C22C101/16 , C30B23/00 , C30B25/00 , C23C16/08 , C23C16/34
CPC分类号： C01B21/0602 , B82Y30/00 , C01P2002/85 , C01P2004/03 , C01P2004/16 , C01P2004/62 , C01P2004/64 , C01P2006/42 , C04B35/62286 , C04B2235/40 , C04B2235/465
摘要： The present invention relates to a fabrication method of gallium manganese nitride (GaMnN) single crystal nanowire, more particularly to a fabrication method of GaMnN single crystal nanowire substrate (10) by halide vapor phase epitaxy (HVPE) in which such metal components as gallium (Ga) (30) and manganese (Mn) (40) react with such gas components as nitrogen (N 2 ), hydrogen chloride (HCl) (60) and ammonia (NH 3 ), wherein the amount of the gas components are adjusted to control the Mn doping concentration in order to obtain nanowire having a perfect, one-dimensional, single crystal structure without internal defect, concentration of holes, or carriers, and magnetization value of which being determined by the doping concentration and showing ferromagnetism at room temperature, thus being a useful spin transporter in the field of the next-generation spintronics, such as spin-polarized LED, spin-polarized FET, etc.
摘要翻译：本发明涉及一种氮化镓（GaMnN）单晶纳米线的制造方法，更具体地说，涉及通过卤化物气相外延（HVPE）的GaMnN单晶纳米线基板（10）的制造方法，其中诸如镓 Ga）（30）和锰（Mn）（40）与氮气（N 2 H 2），氯化氢（HCl）（60）和氨（NH 3） SUB>），其中调节气体组分的量以控制Mn掺杂浓度，以便获得具有完整的一维单晶结构而没有内部缺陷，空穴浓度或载流子的纳米线，以及其由掺杂浓度确定并在室温下显示出铁磁性，因此是下一代自旋电子学领域中有用的自旋转运体，如自旋极化LED，自旋极化FET等。

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