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1. 发明申请

WO2012177380A2 INTERDIGITATED VERTICAL NATIVE CAPACITOR 审中-公开
公开(公告)号：WO2012177380A2
公开(公告)日：2012-12-27
申请号：PCT/US2012/040849
申请日：2012-06-05
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , THOMPSON, Eric , BOOTH, JR., Roger, A. , LU, Ning , PUTNAM, Christopher, S.
发明人： THOMPSON, Eric , BOOTH, JR., Roger, A. , LU, Ning , PUTNAM, Christopher, S.
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L23/5223 , H01L27/0207 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： A metal capacitor structure includes a plurality of line level structures (15, 16, 25, 26) vertically interconnected with via level structures (31, 32, 33, 34, 41, 42). Each first line level structure (15 or 25) and each second line level structure (16 or 26) includes a set of parallel metal lines (11 or 21, 12 or 22) that is physically joined at an end to a rectangular tab structure (13 or 23, 14 or 24) having a rectangular horizontal cross-sectional area. A first set of parallel metal lines (11 or 21) within a first line level structure (15 or 25) and a second set of parallel metal lines (12 or 22) within a second line level structure (16 or 26) are interdigitated and parallel to each other, and can collectively form an interdigitated uniform pitch structure ((11, 12) or (21, 22)). Because the rectangular tab structures (13 or 23, 14 or 24) do not protrude toward each other within a region between two facing sidewalls of the rectangular tab structures (13 or 23, 14 or 24), sub- resolution assist features (SRAFs) can be employed to provide a uniform width and a uniform pitch throughout the entirety of the interdigitated uniform pitch structure ((11, 12) or (21, 22)).
摘要翻译：金属电容器结构包括与通孔级结构（31,32,33,34,41,42）垂直相互连接的多个线路层结构（15,16,25,26）。每个第一线路层结构（15或25）和每个第二线路层结构（16或26）包括一组平行金属线（11或21,12或22），其在端部处物理地连接到矩形突起结构（ 13或23,14或24），其具有矩形水平横截面积。在第二线路层结构（16或26）内的第一线路层结构（15或25）和第二组平行金属线（12或22）内的第一组平行金属线（11或21）是交叉的，彼此平行，并且可以共同形成叉指均匀间距结构（（11,12）或（21,22））。因为矩形突片结构（13或23,14或24）在矩形突片结构（13或23,14或24）的两个相对的侧壁之间的区域内不会彼此突出，所以分解辅助特征（SRAF）可以用于在整个交叉的均匀间距结构（（11,12）或（21,22））的整个上提供均匀的宽度和均匀的间距。

2. 发明申请

WO2011031512A3 INTERDIGITATED VERTICAL PARALLEL CAPACITOR 审中-公开
标题翻译： INTERDIGITATED垂直并联电容器
公开(公告)号：WO2011031512A3
公开(公告)日：2011-06-23
申请号：PCT/US2010046742
申请日：2010-08-26
申请人： IBM , BOOTH JR ROGER A , COOLBAUGH DOUGLAS D , ESHUN EBENEZER E , HE ZHONG-XIANG
发明人： BOOTH JR ROGER A , COOLBAUGH DOUGLAS D , ESHUN EBENEZER E , HE ZHONG-XIANG
IPC分类号： H01L27/108 , H01L21/3205 , H01L21/768 , H01L21/8242 , H01L27/02
CPC分类号： H01L28/90 , H01L23/5223 , H01L28/86 , H01L2924/0002 , H01L2924/00
摘要： An interdigitated structure may include at least one first metal line, at least one second metal line parallel to the at least one first metal line and separated from the at least one first metal line, and a third metal line contacting ends of the at least one first metal line and separated from the at least one second metal line. The at least one first metal line does not vertically contact any metal via and at least one second metal line may vertically contact at least one metal via. Multiple layers of interdigitated structure may be vertically stacked. Alternately, an interdigitated structure may include a plurality of first metal lines and a plurality of second metal lines, each metal line not vertically contacting any metal via. Multiple instances of interdigitated structure may be laterally replicated and adjoined, with or without rotation, and/or vertically stacked to form a capacitor.
摘要翻译：叉指结构可以包括至少一个第一金属线，平行于至少一个第一金属线并与至少一个第一金属线分离的至少一个第二金属线，以及接触该至少一个第一金属线的端部的第三金属线第一金属线并与所述至少一个第二金属线分离。所述至少一个第一金属线不垂直接触任何金属通孔，并且至少一个第二金属线可垂直接触至少一个金属通孔。多层交错结构可以垂直堆叠。替代地，叉指结构可以包括多个第一金属线和多个第二金属线，每条金属线不垂直地接触任何金属通孔。交叉结构的多个实例可以横向复制和邻接，具有或不具有旋转和/或垂直堆叠以形成电容器。

3. 发明申请

WO2011031512A2 INTERDIGITATED VERTICAL PARALLEL CAPACITOR 审中-公开
标题翻译：交叉垂直并联电容器
公开(公告)号：WO2011031512A2
公开(公告)日：2011-03-17
申请号：PCT/US2010/046742
申请日：2010-08-26
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , BOOTH, Jr., Roger A , COOLBAUGH, Douglas D , ESHUN, Ebenezer E , HE, Zhong-Xiang
发明人： BOOTH, Jr., Roger A , COOLBAUGH, Douglas D , ESHUN, Ebenezer E , HE, Zhong-Xiang
IPC分类号： H01L27/108 , H01L21/8242 , H01L21/768 , H01L21/3205 , H01L27/02
CPC分类号： H01L28/90 , H01L23/5223 , H01L28/86 , H01L2924/0002 , H01L2924/00
摘要： An interdigitated structure may include at least one first metal line, at least one second metal line parallel to the at least one first metal line and separated from the at least one first metal line, and a third metal line contacting ends of the at least one first metal line and separated from the at least one second metal line. The at least one first metal line does not vertically contact any metal via and at least one second metal line may vertically contact at least one metal via. Multiple layers of interdigitated structure may be vertically stacked. Alternately, an interdigitated structure may include a plurality of first metal lines and a plurality of second metal lines, each metal line not vertically contacting any metal via. Multiple instances of interdigitated structure may be laterally replicated and adjoined, with or without rotation, and/or vertically stacked to form a capacitor.
摘要翻译：指叉结构可以包括至少一个第一金属线，与所述至少一个第一金属线平行且与所述至少一个第一金属线分离的至少一个第二金属线，以及第三金属所述至少一条第一金属线的线接触端与所述至少一条第二金属线分离。所述至少一个第一金属线不垂直接触任何金属通孔，并且至少一个第二金属线可垂直接触至少一个金属通孔。多层交叉指型结构可以垂直堆叠。可选地，交叉指型结构可以包括多条第一金属线和多条第二金属线，每条金属线不垂直接触任何金属通孔。叉指结构的多个实例可以横向复制和邻接，有或没有旋转，和/或垂直堆叠以形成电容器。

4. 发明申请

WO2012177380A3 INTERDIGITATED VERTICAL NATIVE CAPACITOR 审中-公开
标题翻译：横向垂直电容器
公开(公告)号：WO2012177380A3
公开(公告)日：2013-02-28
申请号：PCT/US2012040849
申请日：2012-06-05
申请人： IBM , THOMPSON ERIC , BOOTH JR ROGER A , LU NING , PUTNAM CHRISTOPHER S
发明人： THOMPSON ERIC , BOOTH JR ROGER A , LU NING , PUTNAM CHRISTOPHER S
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L23/5223 , H01L27/0207 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： A metal capacitor structure includes a plurality of line level structures (15, 16, 25, 26) vertically interconnected with via level structures (31, 32, 33, 34, 41, 42). Each first line level structure (15 or 25) and each second line level structure (16 or 26) includes a set of parallel metal lines (11 or 21, 12 or 22) that is physically joined at an end to a rectangular tab structure (13 or 23, 14 or 24) having a rectangular horizontal cross-sectional area. A first set of parallel metal lines (11 or 21) within a first line level structure (15 or 25) and a second set of parallel metal lines (12 or 22) within a second line level structure (16 or 26) are interdigitated and parallel to each other, and can collectively form an interdigitated uniform pitch structure ((11, 12) or (21, 22)). Because the rectangular tab structures (13 or 23, 14 or 24) do not protrude toward each other within a region between two facing sidewalls of the rectangular tab structures (13 or 23, 14 or 24), sub- resolution assist features (SRAFs) can be employed to provide a uniform width and a uniform pitch throughout the entirety of the interdigitated uniform pitch structure ((11, 12) or (21, 22)).
摘要翻译：金属电容器结构包括与通孔级结构（31,32,33,34,41,42）垂直互连的多个线路层结构（15,16,25,26）。每个第一线路层结构（15或25）和每个第二线路层结构（16或26）包括一组平行金属线（11或21,12或22），其在端部处物理地连接到矩形突起结构（ 13或23,14或24）具有矩形水平横截面积。在第二行级结构（16或26）内的第一行级结构（15或25）和第二组平行金属线（12或22）内的第一组平行金属线（11或21）被交叉指向，彼此平行，并且可以共同形成叉指均匀间距结构（（11,12）或（21,22））。因为矩形突片结构（13或23,14或24）在矩形突片结构（13或23,14或24）的两个相对的侧壁之间的区域内不会彼此突出，所以分解辅助特征（SRAF）可以用于在整个交叉的均匀间距结构（（11,12）或（21,22））的整个上提供均匀的宽度和均匀的间距。

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