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1. 发明申请

WO2011106064A1 PROCESSING METHODS AND APPARATUS WITH TEMPERATURE DISTRIBUTION CONTROL 审中-公开
标题翻译：具有温度分布控制的加工方法和装置
公开(公告)号：WO2011106064A1
公开(公告)日：2011-09-01
申请号：PCT/US2010/060258
申请日：2010-12-14
申请人： VEECO INSTRUMENTS INC. , GURARY, Alex , BELOUSOV, Mikhail , BOGUSLAVSKIY, Vadim , MITROVIC, Bojan
发明人： GURARY, Alex , BELOUSOV, Mikhail , BOGUSLAVSKIY, Vadim , MITROVIC, Bojan
IPC分类号： H01L21/00 , H01L21/687
CPC分类号： H01L22/26 , C23C16/45521 , C23C16/4584 , C23C16/52 , H01L21/0254 , H01L21/0262 , H01L21/67109 , H01L21/68785 , H01L21/68792
摘要： Wafer treatment process and apparatus is provided with a wafer carrier (80) arranged to hold wafers (124) and to inject a fill gas into gaps (130) between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers.
摘要翻译：晶片处理工艺和设备设置有晶片载体（80），其布置成保持晶片（124）并将填充气体注入到晶片和晶片载体之间的间隙（130）中。该装置被布置成改变填充气体的组成，流速或两者，以便抵消晶片的不期望的温度不均匀图案。

2. 发明申请

WO2009102502A2 APPARATUS AND METHOD FOR BATCH NON-CONTACT MATERIAL CHARACTERIZATION 审中-公开
标题翻译：非接触材料表征的装置和方法
公开(公告)号：WO2009102502A2
公开(公告)日：2009-08-20
申请号：PCT/US2009/001006
申请日：2009-02-13
申请人： VEECO INSTRUMENTS INC. , QUINN, William, E. , BELOUSOV, Mikhail , LEE, Dong, Seung , ARMOUR, Eric, A.
发明人： QUINN, William, E. , BELOUSOV, Mikhail , LEE, Dong, Seung , ARMOUR, Eric, A.
IPC分类号： H01L21/66 , H01L21/67
CPC分类号： H01L21/6875 , G01N21/645 , G01N21/6489 , G01N2021/6417 , H01L21/68764 , Y10T117/1004 , Y10T117/1008
摘要： An apparatus for performing non-contact materia characterization includes a wafer carrier (10) adapted to hol a plurality of substrates (12) and a material characterizatio device (20), such as a device for performing photoluminescenc spectroscopy. The apparatus is adapted to perform non-contac material characterization on at least a portion of the wafe carrier (10), including the substrates (12) disposed thereon.
摘要翻译：用于执行非接触材料表征的装置包括适于保持多个基板（12）和材料特性装置（20）的晶片载体（10），诸如用于进行光致发光光谱的装置。该装置适于在至少一部分湿式载体（10）上执行非连续材料表征，包括设置在其上的基板（12）。

3. 发明申请

WO2010054184A3 CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION 审中-公开
公开(公告)号：WO2010054184A3
公开(公告)日：2010-05-14
申请号：PCT/US2009/063532
申请日：2009-11-06
申请人： VEECO INSTRUMENTS INC. , GURARY, Alex , BELOUSOV, Mikhail , MITROVIC, Bojan
发明人： GURARY, Alex , BELOUSOV, Mikhail , MITROVIC, Bojan
IPC分类号： H01L21/205
摘要： A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber (10) of a rotating-disc reactor and directed downwardly onto a wafer carrier (32) and substrates (40) which are maintained at an elevated substrate temperature, typically above about 400°C and normally about 700-1100°C to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75°C and most preferably about 100°-350°C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

4. 发明申请

WO2014058352A3 ENERGY-GENERATING DEVICE 审中-公开
标题翻译：能源发电设备
公开(公告)号：WO2014058352A3
公开(公告)日：2014-06-19
申请号：PCT/RU2013000879
申请日：2013-10-04
申请人： BELOUSOV MIKHAIL ANATOL EVICH
发明人： BELOUSOV MIKHAIL ANATOL EVICH
IPC分类号： A43B3/00 , A43B13/00
CPC分类号： A43B3/0015 , A43B7/04 , F03G5/06 , H02K7/1853
摘要： The utility model relates to the footwear industry and is intended for generating and storing energy for heating footwear and charging/recharging portable devices such as mobile telephones, smartphones, still cameras, players, navigation devices, DVD players and portable computers, or for heating footwear worn by people who work or spend long periods outdoors in low temperatures, for example road workers, travellers, tourists, etc. The technical result of the utility model is a more structurally simple mechanical device for converting human locomotive energy into electrical energy, and a more robust design which is resilient to damage when the footwear is in use. This result is achieved because the energy-generating device, comprising an energy generator and an energy converter installed inside an article of footwear, is characterized in that inside the cavity of the heel of the footwear article, between the top and bottom walls, are a screw-threaded pivot with a rotating flywheel of a generator disposed thereon and a generator disposed around the edge of said flywheel, wherein springs are mounted between the top and bottom walls of the heel cavity, which serve the function of bringing the pivot into a start position when the wearer is walking.
摘要翻译：本实用新型涉及鞋类工业，用于生产和储存用于加热鞋类和便携式设备（例如移动电话，智能电话，静态照相机，播放器，导航设备，DVD播放器和便携式计算机）的充电/再充电的能量，或用于加热鞋类在低温下户外工作或长时间居住的人穿着，例如道路工人，旅行者，游客等。本实用新型的技术结果是将人机能量转化为电能的结构简单的机械装置，更坚固的设计，在鞋类使用时具有抵御伤害的能力。实现该结果是因为包括能量发生器和安装在鞋类物品内的能量转换器的能量产生装置的特征在于，在鞋类物品的鞋跟之间的顶壁和底壁之间的内部是螺旋式枢轴，其中设置有发电机的旋转飞轮和围绕所述飞轮的边缘设置的发电机，其中弹簧安装在跟部腔的顶壁和底壁之间，其用于将枢轴带入起动穿着者走路时的位置。

5. 发明申请

WO2010065695A2 CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS 审中-公开
标题翻译：化学气相沉积流入元件和方法
公开(公告)号：WO2010065695A2
公开(公告)日：2010-06-10
申请号：PCT/US2009/066502
申请日：2009-12-03
申请人： VEECO INSTRUMENTS INC. , BELOUSOV, Mikhail , MITROVIC, Bojan , MOY, Keng
发明人： BELOUSOV, Mikhail , MITROVIC, Bojan , MOY, Keng
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： C30B25/14 , C23C16/45574 , C23C16/45578 , C23C16/4584
摘要： A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65)_ extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.
摘要翻译：用于化学气相沉积反应器（10）的流入口元件（22）由多个细长管状元件（64,65）形成，所述细长管状元件（64,65）在横向于上游到下游方向的平面中彼此并排延伸的反应器。管状元件具有用于沿下游方向喷射气体的入口。晶片载体（14）围绕上游到下游轴线旋转。气体分布元件可以提供相对于延伸穿过轴线的中间平面（108）不对称的气体分布图案。

6. 发明申请

WO2010054184A2 CHEMICAL VAPOR DEPOSITION WITH ELEVATED TEMPERATURE GAS INJECTION 审中-公开
标题翻译：化学气相沉积高温气体注入
公开(公告)号：WO2010054184A2
公开(公告)日：2010-05-14
申请号：PCT/US2009063532
申请日：2009-11-06
申请人： VEECO INSTR INC , GURARY ALEX , BELOUSOV MIKHAIL , MITROVIC BOJAN
发明人： GURARY ALEX , BELOUSOV MIKHAIL , MITROVIC BOJAN
IPC分类号： H01L21/205
CPC分类号： H01L21/02538 , C23C16/301 , C23C16/45504 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C23C16/45587 , C23C16/458 , C23C16/4584 , C23C16/46 , H01L21/0262
摘要： A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber (10) of a rotating-disc reactor and directed downwardly onto a wafer carrier (32) and substrates (40) which are maintained at an elevated substrate temperature, typically above about 400°C and normally about 700-1100°C to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75°C and most preferably about 100°-350°C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.
摘要翻译：化学气相沉积反应器和方法。将反应性气体（例如包括III族金属源和V族金属源的气体）引入到旋转盘式反应器的室（10）中并向下引导到晶片载体（32）和基板（40）保持在升高的基板温度，通常高于约400℃并且通常约700-1100℃以沉积诸如III-V半导体的化合物。将气体以希望高于约75℃的入口温度引入反应器，最优选约100-350℃。反应器的壁可以处于接近入口温度的温度。使用升高的入口温度允许使用晶片载体的较低旋转速度，较高的操作压力，较低的流速或这些的一些组合。

7. 发明申请

WO2009102502A4 APPARATUS AND METHOD FOR BATCH NON-CONTACT MATERIAL CHARACTERIZATION 审中-公开
标题翻译：用于分批非接触材料表征的装置和方法
公开(公告)号：WO2009102502A4
公开(公告)日：2009-12-17
申请号：PCT/US2009001006
申请日：2009-02-13
申请人： VEECO INSTR INC , QUINN WILLIAM E , BELOUSOV MIKHAIL , LEE DONG SEUNG , ARMOUR ERIC A
发明人： QUINN WILLIAM E , BELOUSOV MIKHAIL , LEE DONG SEUNG , ARMOUR ERIC A
IPC分类号： H01L21/66 , H01L21/673
CPC分类号： H01L21/6875 , G01N21/645 , G01N21/6489 , G01N2021/6417 , H01L21/68764 , Y10T117/1004 , Y10T117/1008
摘要： An apparatus for performing non-contact material characterization includes a wafer carrier (10) adapted to hold a plurality of substrates (12) and a material characterization device (20), such as a device for performing photoluminescence spectroscopy. The apparatus is adapted to perform non-contact material characterization on at least a portion of the wafer carrier (10), including the substrates (12) disposed thereon.
摘要翻译：用于执行非接触材料表征的装置包括适于保持多个衬底（12）的晶片载体（10）和诸如用于执行光致发光光谱学的装置的材料表征装置（20）。该设备适于在晶片载体（10）的至少一部分上执行非接触材料表征，包括设置在其上的衬底（12）。

8. 发明申请

WO2009102502A3 APPARATUS AND METHOD FOR BATCH NON-CONTACT MATERIAL CHARACTERIZATION 审中-公开
标题翻译：非接触材料表征的装置和方法
公开(公告)号：WO2009102502A3
公开(公告)日：2009-10-29
申请号：PCT/US2009001006
申请日：2009-02-13
申请人： VEECO INSTR INC , QUINN WILLIAM E , BELOUSOV MIKHAIL , LEE DONG SEUNG , ARMOUR ERIC A
发明人： QUINN WILLIAM E , BELOUSOV MIKHAIL , LEE DONG SEUNG , ARMOUR ERIC A
IPC分类号： H01L21/66 , H01L21/673
CPC分类号： H01L21/6875 , G01N21/645 , G01N21/6489 , G01N2021/6417 , H01L21/68764 , Y10T117/1004 , Y10T117/1008
摘要： An apparatus for performing non-contact material characterization includes a wafer carrier (10) adapted to hold a plurality of substrates (12) and a material characterization device (20), such as a device for performing photoluminescence spectroscopy. The apparatus is adapted to perform non-contact material characterization on at least a portion of the wafer carrier (10), including the substrates (12) disposed thereon.
摘要翻译：用于执行非接触材料表征的装置包括适于保持多个基板（12）的晶片载体（10）和诸如用于执行光致发光光谱的装置的材料表征装置（20）。该装置适于在晶片载体（10）的至少一部分上执行非接触材料表征，包括设置在其上的基板（12）。

9. 发明申请

WO2006083819A1 CALIBRATION WAFER AND METHOD OF CALIBRATING IN SITU TEMPERATURES 审中-公开
标题翻译：校准波形和温度校准方法
公开(公告)号：WO2006083819A1
公开(公告)日：2006-08-10
申请号：PCT/US2006/003331
申请日：2006-01-31
申请人： VEECO INSTRUMENTS INC. , VOLF, Boris , BELOUSOV, Mikhail , GURARY, Alexander
发明人： VOLF, Boris , BELOUSOV, Mikhail , GURARY, Alexander
IPC分类号： G01J5/00 , G01J5/52
CPC分类号： G01J5/0003 , G01J5/522
摘要： A system and method for calibrating a pyrometer [210] used in temperature detection in a chemical vapor deposition system [100] is provided. A calibration wafer [120] with a reference region [135] including a metal such as Al or Ag for forming a eutectic, and an exposed non- reference region [130] without such a metal, are provided. Reflectivity measurements are taken from the reference region [135], and temperature measurements are taken from the non-reference region [130], over a range of temperatures including a known melting point for the metal eutectic. The pyrometer [210] is calibrated based on the correlation of the known eutectic melting point with the change in reflectivity data obtained in the reference region, in light of the temperature data obtained from the non-reference region.
摘要翻译：提供了一种用于校准在化学气相沉积系统[100]中用于温度检测的高温计[210]的系统和方法。提供了具有包括用于形成共晶体的诸如Al或Ag的金属的参考区域[135]的校准晶片和暴露的不具有这种金属的非参考区域[130]。反射率测量取自参考区域[135]，并且在包括金属共晶体的已知熔点的温度范围内从非参考区域[130]获取温度测量值。根据从非参考区获得的温度数据，基于已知共晶熔点与参考区域中获得的反射率数据的变化的相关性来校准高温计[210]。

10. 发明申请

WO2010065695A3 CHEMICAL VAPOR DEPOSITION FLOW INLET ELEMENTS AND METHODS 审中-公开
标题翻译：化学气相沉积流入元件和方法
公开(公告)号：WO2010065695A3
公开(公告)日：2010-09-10
申请号：PCT/US2009066502
申请日：2009-12-03
申请人： VEECO INSTR INC , BELOUSOV MIKHAIL , MITROVIC BOJAN , MOY KENG
发明人： BELOUSOV MIKHAIL , MITROVIC BOJAN , MOY KENG
IPC分类号： H01L21/205 , C23C16/455
CPC分类号： C30B25/14 , C23C16/45574 , C23C16/45578 , C23C16/4584
摘要： A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65) extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.
摘要翻译：用于化学气相沉积反应器（10）的流入口元件（22）由多个细长管状元件（64,65）形成，所述多个细长管状元件（64,65）在横向于上游到下游方向的平面中彼此并排延伸反应堆。管状元件具有用于沿下游方向喷射气体的入口。晶片载体（14）围绕上游到下游轴线旋转。气体分布元件可以提供相对于延伸穿过轴线的中间平面（108）不对称的气体分布图案。

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