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1. 发明申请

WO2012177743A2 NOVEL THERMAL PROCESSING APPARATUS 审中-公开
标题翻译：新型热处理装置
公开(公告)号：WO2012177743A2
公开(公告)日：2012-12-27
申请号：PCT/US2012/043323
申请日：2012-06-20
申请人： APPLIED MATERIALS, INC. , MOFFATT, Stephen , HOLMGREN, Douglas, E. , HOWELLS, Samuel, C. , TONG, Edric , ADAMS, Bruce, E. , LI, Jiping , HUNTER, Aaron, Muir
发明人： MOFFATT, Stephen , HOLMGREN, Douglas, E. , HOWELLS, Samuel, C. , TONG, Edric , ADAMS, Bruce, E. , LI, Jiping , HUNTER, Aaron, Muir
IPC分类号： H01L21/324 , H01L21/26
CPC分类号： H01L21/477 , B23K26/0006 , B23K26/0081 , B23K26/03 , B23K26/032 , B23K26/04 , B23K26/0608 , B23K26/0622 , B23K26/08 , B23K26/127 , B23K2201/40 , B23K2203/56 , H01L21/268 , H01S3/0057
摘要： The present invention generally relates to an optical system that is able to reliably deliver a uniform amount of energy across an anneal region contained on a surface of a substrate. The optical system is adapted to deliver, or project, a uniform amount of energy having a desired two-dimensional shape on a desired region on the surface of the substrate. An energy source for the optical system is typically a plurality of lasers, which are combined to form the energy field.
摘要翻译：本发明一般涉及能够在包含在基板的表面上的退火区域上可靠地输送均匀的能量的光学系统。光学系统适于在衬底的表面上的期望区域上传送或投影具有期望的二维形状的均匀量的能量。用于光学系统的能量源通常是多个激光器，其被组合以形成能量场。

2. 发明申请

WO2011153301A3 PHOTOVOLTAIC CELLS INCLUDING PEAKS AND METHODS OF MANUFACTURE 审中-公开
标题翻译：光伏电池包括峰值和制造方法
公开(公告)号：WO2011153301A3
公开(公告)日：2012-02-02
申请号：PCT/US2011038853
申请日：2011-06-02
申请人： APPLIED MATERIALS INC , EBERSPACHER CHRIS , ADAMS BRUCE E
发明人： EBERSPACHER CHRIS , ADAMS BRUCE E
IPC分类号： H01L31/042 , H01L31/0236
CPC分类号： H01L31/022425 , H01L31/03921 , H01L31/0465 , Y02E10/50
摘要： Photovoltaic module and methods for the manufacture of photovoltaic modules are described. Operative layers of the photovoltaic cell are deposited onto a superstrate having one or more of at least one peak allowing for electrical isolation of a portion of a photovoltaic module and at least one ramp creating a series connection between individual photovoltaic cells with minimal loss of the efficiency due to dead space between the cells.
摘要翻译：描述了用于制造光伏组件的光伏组件和方法。将光伏电池的操作层沉积到具有一个或多个至少一个峰的上覆层上，所述至少一个峰允许电光隔离一部分光伏模块和至少一个斜坡，从而在单个光伏电池之间产生串联连接，同时以最小的效率损失由于细胞之间的死空间。

3. 发明申请

WO2010065628A2 PHOTOVOLTAIC CELLS INCLUDING SPACED RAMPS AND METHODS OF MANUFACTURE 审中-公开
标题翻译：光伏电池包括间隙RAMPS和制造方法
公开(公告)号：WO2010065628A2
公开(公告)日：2010-06-10
申请号：PCT/US2009/066395
申请日：2009-12-02
申请人： APPLIED MATERIALS, INC. , ADAMS, Bruce, E.
发明人： ADAMS, Bruce, E.
IPC分类号： H01L31/042
CPC分类号： H01L31/03921 , H01L31/022425 , H01L31/035281 , H01L31/046 , H01L31/0465 , Y02E10/50
摘要： Photovoltaic cells and methods for the manufacture of photovoltaic cells are described. Operative layers of the photovoltaic cell are deposited onto a superstrate having a plurality of spaced ramps, allowing for the individual cells to be connected in series with minimal loss of the efficiency due to dead space between the cells.
摘要翻译：描述了用于制造光伏电池的光伏电池和方法。光伏电池的操作层被沉积到具有多个间隔的斜面的衬底上，允许单个电池串联连接，由于电池之间的死空间而导致的效率的最小损失。

4. 发明申请

WO2010036621A2 DEFECT-FREE JUNCTION FORMATION USING OCTADECABORANE SELF-AMORPHIZING IMPLANTS 审中-公开
标题翻译：使用OCTADECABORANE自补偿植入物进行无缺陷断层形成
公开(公告)号：WO2010036621A2
公开(公告)日：2010-04-01
申请号：PCT/US2009/057708
申请日：2009-09-21
申请人： APPLIED MATERIALS, INC. , LI, Jiping , HUNTER, Aaron Muir , ADAMS, Bruce E. , MOFFITT, Theodore , MOFFATT, Stephen
发明人： LI, Jiping , HUNTER, Aaron Muir , ADAMS, Bruce E. , MOFFITT, Theodore , MOFFATT, Stephen
IPC分类号： H01L21/265
CPC分类号： H01L21/265 , H01J37/32357 , H01J37/32412 , H01L21/26513 , H01L21/324
摘要： A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.
摘要翻译：一种用硼簇植入半导体衬底的方法和装置。通过等离子体浸渍或离子束注入，注入十八硼烷衬底。然后将衬底表面退火以完全解离并激活硼簇。退火可以通过熔化注入区域或通过亚熔融退火工艺进行。

5. 发明申请

WO2009017894A1 METHOD FOR PARTITIONING AND INCOHERENTLY SUMMING A COHERENT BEAM 审中-公开
标题翻译：用于分离和不可避免地聚集相干光束的方法
公开(公告)号：WO2009017894A1
公开(公告)日：2009-02-05
申请号：PCT/US2008/067493
申请日：2008-06-19
申请人： APPLIED MATERIALS, INC. , JENNINGS, Dean , THOMAS, Timothy N. , MOFFATT, Stephen , LI, Jiping , ADAMS, Bruce E. , HOWELLS, Samuel C.
发明人： JENNINGS, Dean , THOMAS, Timothy N. , MOFFATT, Stephen , LI, Jiping , ADAMS, Bruce E. , HOWELLS, Samuel C.
IPC分类号： B23K26/067 , H01L21/268
CPC分类号： G02B27/283 , B23K26/0604 , B23K26/0613 , B23K26/0622 , B23K26/067 , G02B27/10 , G02B27/144 , G02B27/145 , G02B27/48 , H01L21/268 , H01L21/67115
摘要： A method and apparatus for decorrelating coherent light from a light source, such as a pulsed laser, in both time and space in an effort to provide intense and uniform illumination are provided. For some embodiments employing a pulsed light source, the output pulse may be stretched relative to the input pulse width. The methods and apparatus described herein may be incorporated into any application where intense, uniform illumination is desired, such as pulsed laser annealing, welding, ablating, and wafer stepper illuminating.
摘要翻译：提供了一种用于在时间和空间上从光源（例如脉冲激光）去除相干光的方法和装置，以提供强烈和均匀的照明。对于采用脉冲光源的一些实施例，可以相对于输入脉冲宽度拉伸输出脉冲。本文描述的方法和装置可以结合到需要强烈均匀照明的任何应用中，例如脉冲激光退火，焊接，烧蚀和晶片步进照明。

6. 发明申请

WO2008063840A1 COMPENSATION TECHNIQUES FOR SUBSTRATE HEATING PROCESSES 审中-公开
标题翻译：基板加热工艺补偿技术
公开(公告)号：WO2008063840A1
公开(公告)日：2008-05-29
申请号：PCT/US2007/083271
申请日：2007-11-01
申请人： APPLIED MATERIALS, INC. , RANISH, Joseph M. , ADAMS, Bruce E.
发明人： RANISH, Joseph M. , ADAMS, Bruce E.
IPC分类号： F27B5/14
CPC分类号： C23C16/46 , C21D1/34
摘要： Methods for compensating for a thermal profile in a substrate heating process are provided herein. In one embodiment, a method of processing a substrate includes determining an initial thermal profile of a substrate resulting from a process; imposing a compensatory thermal profile on the substrate based on the initial thermal profile; and performing the process to create a desired thermal profile on the substrate. In other embodiments of the invention, the initial substrate thermal profile is compensated for by adjusting a local mass heated per unit area, a local heat capacity per unit area, or an absorptivity or reflectivity of a component proximate the substrate prior to performing the process. In another embodiment, the heat provided by an edge ring to the substrate may be controlled either prior to or during the substrate heating process.
摘要翻译：本文提供了用于补偿基板加热过程中的热分布的方法。在一个实施例中，处理衬底的方法包括确定由工艺产生的衬底的初始热分布; 基于初始热分布在衬底上施加补偿热分布; 并执行该过程以在衬底上产生期望的热分布。在本发明的其它实施例中，通过在执行该过程之前通过调节每单位面积加热的局部质量，每单位面积的局部热容量或接近该衬底的组分的吸收率或反射率来补偿初始衬底热分布。在另一个实施例中，由边缘环提供到衬底的热可以在衬底加热过程之前或期间被控制。

7. 发明申请

WO1992019944A1 NON-CONTACT OPTICAL TECHNIQUES FOR MEASURING SURFACE CONDITIONS 审中-公开
标题翻译：用于测量表面条件的非接触式光学技术
公开(公告)号：WO1992019944A1
公开(公告)日：1992-11-12
申请号：PCT/US1992003456
申请日：1992-04-27
申请人： LUXTRON CORPORATION , SCHIETINGER, Charles, W. , ADAMS, Bruce, E.
发明人： LUXTRON CORPORATION
IPC分类号： G01J05/00
CPC分类号： G01B11/0658 , G01J5/0003 , G01J5/0007 , G01N21/474 , G01N21/8422 , G01N2021/4742
摘要： Thermal, optical, physical and chemical characteristics of a substrate (11) surface are determined with non-contact optical techniques that include illuminating (23) the surface with radiation having a ripple intensity characteristic (51), and then measuring the combined intensities (53) of that radiation after modification by the substrate surface and radiation emitted from the surface. Precise determinations of emissivity, reflectivity, temperature, changing surface composition, the existence of any layer formed on the surface and its thickness are all possible from this measurement. They may be made in situ and substantially in real time, thus allowing the measurement to control (39, 41) various processes of treating a substrate surface. This has significant applicability to semiconductor wafer processing and metal processing.
摘要翻译：使用非接触光学技术确定衬底（11）表面的热，光学，物理和化学特性，其包括用具有纹波强度特性（51）的辐射照射（23）表面，然后测量组合强度（53 ）由基板表面改性后的辐射和从表面发射的辐射。从该测量可以准确确定发射率，反射率，温度，表面组成，表面上形成的任何层的存在及其厚度。它们可以在原位和实质上实时制备，从而允许测量控制（39,41）处理基底表面的各种过程。这对于半导体晶片加工和金属加工具有显着的适用性。

8. 发明申请

WO2013033637A3 CRYSTALLIZATION METHODS 审中-公开
标题翻译：结晶方法
公开(公告)号：WO2013033637A3
公开(公告)日：2013-04-25
申请号：PCT/US2012053527
申请日：2012-08-31
申请人： APPLIED MATERIALS INC , ADAMS BRUCE E , HUNTER AARON MUIR , MOFFAT STEPHAN
发明人： ADAMS BRUCE E , HUNTER AARON MUIR , MOFFAT STEPHAN
IPC分类号： H01L21/324
CPC分类号： H01L21/02686 , H01L21/02521 , H01L21/268
摘要： Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.
摘要翻译：描述了用非晶半导体层或具有小晶体的半导体层处理衬底以在衬底中形成大晶体的装置和方法。使用向处理区域递送脉冲能量的渐进熔化过程来识别和熔化基板的处理区域。然后使用将脉冲能量递送到该区域的渐进结晶过程对治疗区域进行再结晶。在渐进结晶过程中输送的脉冲能量被选择为在熔融材料冻结时将小晶体转化为大晶体。

9. 发明申请

WO2013033637A2 CRYSTALLIZATION METHODS 审中-公开
标题翻译：结晶方法
公开(公告)号：WO2013033637A2
公开(公告)日：2013-03-07
申请号：PCT/US2012/053527
申请日：2012-08-31
申请人： APPLIED MATERIALS, INC. , ADAMS, Bruce E. , HUNTER, Aaron Muir , MOFFAT, Stephan
发明人： ADAMS, Bruce E. , HUNTER, Aaron Muir , MOFFAT, Stephan
IPC分类号： H01L21/324
CPC分类号： H01L21/02686 , H01L21/02521 , H01L21/268
摘要： Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.
摘要翻译：描述了用非晶半导体层或具有小晶体的半导体层处理衬底以在衬底中形成大晶体的装置和方法。使用将脉冲能量递送到处理区域的渐进熔融方法来鉴定和熔化基底的处理区域。然后使用将脉冲能量递送到该区域的逐步结晶过程将处理区域重结晶。选择渐进式结晶过程中输送的脉冲能量，以使熔融材料冻结时将小晶体转化为大晶体。

10. 发明申请

WO2010036621A3 DEFECT-FREE JUNCTION FORMATION USING OCTADECABORANE SELF-AMORPHIZING IMPLANTS 审中-公开
标题翻译：使用十八烷酰基自体非晶化植入物的无缺陷接合形成
公开(公告)号：WO2010036621A3
公开(公告)日：2010-07-01
申请号：PCT/US2009057708
申请日：2009-09-21
申请人： APPLIED MATERIALS INC , LI JIPING , HUNTER AARON MUIR , ADAMS BRUCE E , MOFFITT THEODORE , MOFFATT STEPHEN
发明人： LI JIPING , HUNTER AARON MUIR , ADAMS BRUCE E , MOFFITT THEODORE , MOFFATT STEPHEN
IPC分类号： H01L21/265
CPC分类号： H01L21/265 , H01J37/32357 , H01J37/32412 , H01L21/26513 , H01L21/324
摘要： A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.
摘要翻译：一种用硼簇注入半导体衬底的方法和装置。通过等离子体浸没或离子束注入将基板注入十八硼烷。然后将衬底表面退火以完全解离并激活硼簇。退火可以通过熔化注入区域或通过子熔体退火工艺来进行。

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