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1. 发明申请

WO2019032177A1 HIGH QUALITY FACTOR MEMS SILICON FLOWER-OF-LIFE VIBRATORY GYROSCOPE 审中-公开
公开(公告)号：WO2019032177A1
公开(公告)日：2019-02-14
申请号：PCT/US2018/036564
申请日：2018-06-07
申请人： HRL LABORATORIES, LLC
发明人： HUANG, Lian X. , SORENSON, Logan D. , PERAHIA, Raviv , NGUYEN, Hung , CHANG, David T.
IPC分类号： G01C19/5684
摘要： A resonator includes an anchor, an outer stiffener ring on an outer perimeter of the resonator, and a plurality of curved springs between the anchor and the outer stiffener ring.

2. 发明申请

WO2011049566A1 SURGICAL SAW DEVICE AND METHOD OF MANUFACTURE 审中-公开
标题翻译：手术器械及其制造方法
公开(公告)号：WO2011049566A1
公开(公告)日：2011-04-28
申请号：PCT/US2009/061549
申请日：2009-10-21
申请人： SYNVASIVE TECHNOLOGY, INC. , FISHER, Michael G. , ANES, John
发明人： FISHER, Michael G. , ANES, John
IPC分类号： A61B17/14 , A61B17/32
CPC分类号： A61B17/144 , Y10T29/53
摘要： A surgical saw includes a shaft, a first saw blade mounted on the shaft, a second saw blade mounted on the shaft parallel to the first saw blade, the first saw blade having a first tooth having two distal tips, and the second saw blade having a second tooth with a distal tip, the second tooth bent towards the first saw blade and the distal tip of the second tooth aligned with a centerline between the two distal tips of the first tooth.
摘要翻译：手术锯包括轴，安装在轴上的第一锯片，安装在平行于第一锯片的轴上的第二锯片，第一锯片具有具有两个远端尖端的第一齿，第二锯片具有具有远端的第二齿，所述第二齿朝向所述第一锯片弯曲，并且所述第二齿的远侧末端与所述第一齿的两个远侧末端之间的中心线对准。

3. 发明申请

WO2019152090A1 FABRICATING ELECTRICALLY ISOLATED DIAMOND NANOWIRES AND APPLICATION 审中-公开
公开(公告)号：WO2019152090A1
公开(公告)日：2019-08-08
申请号：PCT/US2018/062342
申请日：2018-11-21
申请人： HRL LABORATORIES, LLC
发明人： HUANG, Biqin , BAI, Xiwei
IPC分类号： H01L29/06 , H01L21/02 , H01L21/311 , H01L21/265 , H01L21/304 , H01L29/78 , H01L29/66
摘要： A method for fabricating an electrically isolated diamond nanowire includes forming a diamond nanowire on a diamond substrate, depositing a dielectric or a polymer on the diamond nanowire and on the diamond substrate, planarizing the dielectric or the polymer, etching a portion of the planarized dielectric or polymer to expose a first portion of the diamond nanowire, depositing a metal layer to conformably cover the first portion of the diamond nanowire, and implanting ions into a second portion of the diamond nanowire between the first portion of the diamond nanowire and the diamond substrate or at an intersection of the diamond nanowire and the diamond, substrate, wherein the ions are implanted at an oblique angle from a first side of the diamond nanowire.

4. 发明申请

WO2020081145A1 EFFICIENT EGOMOTION ESTIMATION USING PATCH BASED PROJECTED CORRELATION 审中-公开
公开(公告)号：WO2020081145A1
公开(公告)日：2020-04-23
申请号：PCT/US2019/045534
申请日：2019-08-07
申请人： HRL LABORATORIES, LLC
发明人： HORVATH, Andras , RAO, Shankar
IPC分类号： G06T7/20 , G06T7/13 , G06T3/00
摘要： A method for improving computational efficiency for egomotion estimation includes detecting a pair of consecutive images, and estimating a rotation angle and a two dimensional translation vector that best models the motion between the image frames. The pair of images are each divided into overlapping image patches, and then an efficient projected correlation approach is used to estimate a local two dimensional translation vector for each image patch. The translation vectors from all the patches form a vector field, and then trimmed-mean method is used to robustly and efficiently estimate the rotation angle and the two dimensional translation that best models the egomotion of the detector, which may be a camera.

5. 发明申请

WO2013176904A1 HEMT DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译： HEMT装置及其制造方法
公开(公告)号：WO2013176904A1
公开(公告)日：2013-11-28
申请号：PCT/US2013/040431
申请日：2013-05-09
申请人： HRL LABORATORIES, LLC
发明人： KHALIL, Sameh , BOUTROS, Karim, S. , SHINOHARA, Keisuke
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/66462 , H01L21/31144 , H01L29/2003 , H01L29/4236 , H01L29/7786
摘要： A high electron mobility field effect transistor (HEMT) having a substrate, a channel layer on the substrate and a barrier layer on the channel layer includes a stress inducing layer on the barrier layer, the stress inducing layer varying the piezo-electric effect in the barrier layer in a drift region between a gate and a drain. A two dimensional electron gas (2DEG) has a non-uniform lateral distribution in the drift region between the gate and the drain.
摘要翻译：具有衬底，衬底上的沟道层和沟道层上的阻挡层的高电子迁移率场效应晶体管（HEMT）包括在阻挡层上的应力诱导层，应力诱导层改变了压电效应栅极和漏极之间的漂移区域中的阻挡层。二维电子气（2DEG）在栅极和漏极之间的漂移区域中具有不均匀的横向分布。

6. 发明申请

WO2021236226A1 SOLID- STATE TIP-TILT-PHASED ARRAY 审中-公开
公开(公告)号：WO2021236226A1
公开(公告)日：2021-11-25
申请号：PCT/US2021/023352
申请日：2021-03-19
申请人： HRL LABORATORIES, LLC
发明人： KREMER, Richard , SON, Kyung-Ah , MOON, Jeong-Sun , QUARFOTH, Ryan
IPC分类号： G02F1/29 , G01S7/481
摘要： A solid state optical beam steering device including a body of electro-optical material wherein the body of electro-optical material comprises any material of a class of hydrogen-doped phase-change metal oxide and wherein the body has a first face and a second face opposite the first face, a first transparent resistive sheet on the first face of the body of electro optic material, wherein the first transparent resistive sheet has a first side and a second side, and a transparent conductor on the second face of the body of electro optic material, wherein the transparent conductor is coupled to the second side of the first transparent resistive sheet.

7. 发明申请

WO2020257168A1 SCALABLE INTEGRATED CIRCUIT WITH SYNAPTIC ELECTRONICS AND CMOS INTEGRATED MEMRISTORS 审中-公开
公开(公告)号：WO2020257168A1
公开(公告)日：2020-12-24
申请号：PCT/US2020/037891
申请日：2020-06-16
申请人： HRL LABORATORIES, LLC
发明人： CRUZ-ALBRECHT, Jose , DEROSIER, Timothy , SRINIVASA, Narayan
IPC分类号： G06N3/063 , G11C11/54 , G11C13/00
摘要： A reconfigurable neural circuit includes an array of processing nodes. Each processing node includes a single physical neuron circuit having only one input and an output, a single physical synapse circuit having a presynaptic input, and a single physical output coupled to the input of the neuron circuit, a weight memory for storing N synaptic conductance value or weights having an output coupled to the single physical synapse circuit, a single physical spike timing dependent plasticity (STDP) circuit having an output coupled to the weight memory, a first input coupled to the output of the neuron circuit, and a second input coupled to the presynaptic input, and interconnect circuitry connected to the presynaptic input and connected to the output of the single physical neuron circuit. The synapse circuit and the STOP circuit are each time multiplexed circuits. The interconnect circuitry in each respective processing node is coupled to the interconnect circuitry in each other processing node.

8. 发明申请

WO2020055508A1 ELECTRONICALLY STEERABLE HOLOGRAPHIC ANTENNA WITH RECONFIGURABLE RADIATORS FOR WIDEBAND FREQUENCY TUNING 审中-公开
公开(公告)号：WO2020055508A1
公开(公告)日：2020-03-19
申请号：PCT/US2019/043056
申请日：2019-07-23
申请人： HRL LABORATORIES, LLC
发明人： QUARFOTH, Ryan G. , WHITE, Carson R.
IPC分类号： H01Q9/28 , H01Q5/55 , H01Q1/38
摘要： A holographic antenna including a transmission line structure having a traveling wave mode along a length of the transmission line structure, and a plurality of reconfigurable radiating elements located along the length of the transmission line structure.

9. 发明申请

WO2015047421A1 NORMALLY-OFF III-NITRIDE TRANSISTORS WITH HIGH THRESHOLD-VOLTAGE AND LOW ON-RESISTANCE 审中-公开
标题翻译：具有高电压和低阻值的正常III型氮化物晶体管
公开(公告)号：WO2015047421A1
公开(公告)日：2015-04-02
申请号：PCT/US2013/062750
申请日：2013-09-30
申请人： HRL LABORATORIES, LLC
发明人： CHU, Rongming , BROWN, David F. , WILLIAMS, Adam J.
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L21/823807 , H01L23/535 , H01L27/092 , H01L29/0649 , H01L29/2003 , H01L29/4236 , H01L29/513 , H01L29/66462 , H01L29/66522 , H01L29/7786 , H01L29/7787 , H01L29/78
摘要： A III-nitride transistor includes a III-nitride channel layer, a barrier layer over the channel layer, the barrier layer having a thickness of 1 to 10 nanometers, a dielectric layer on top of the barrier layer, a source electrode contacting the channel layer, a drain electrode contacting the channel layer, a gate trench extending through the dielectric layer and barrier layer and having a bottom located within the channel layer, a gate insulator lining the gate trench and extending over the dielectric layer, and a gate electrode in the gate trench and extending partially toward the source and the drain electrodes to form an integrated gate field-plate, wherein a distance between an interface of the channel layer and the barrier layer and the bottom of the gate trench is greater than 0 nm and less than or equal to 5 nm.
摘要翻译： III族氮化物晶体管包括III族氮化物沟道层，沟道层上的势垒层，厚度为1至10纳米的势垒层，阻挡层顶部的电介质层，与沟道层接触的源电极接触沟道层的漏电极，延伸穿过电介质层和阻挡层并且具有位于沟道层内的底部的栅极沟槽，衬在栅极沟槽上并在电介质层上延伸的栅极绝缘体，以及栅极电极栅极沟槽，并且部分地朝向源极和漏极电极延伸以形成集成栅极场板，其中沟道层的界面与势垒层的界面与栅极沟槽的底部之间的距离大于0nm且小于或等于5nm。

10. 发明申请

WO2014088634A1 NEURAL MODEL FOR REINFORCEMENT LEARNING 审中-公开
标题翻译：用于加强学习的神经模型
公开(公告)号：WO2014088634A1
公开(公告)日：2014-06-12
申请号：PCT/US2013/041451
申请日：2013-05-16
申请人： HRL LABORATORIES, LLC
发明人： THIBEAULT, Corey, M. , SRINIVASA, Narayan
IPC分类号： G06N3/02
CPC分类号： G06N3/08 , G06N3/04 , G06N3/049 , G06N99/005
摘要： A neural model for reinforcement-learning and for action-selection includes a plurality of channels, a population of input neurons in each of the channels, a population of output neurons in each of the channels, each population of input neurons in each of the channels coupled to each population of output neurons in each of the channels, and a population of reward neurons in each of the channels. Each channel of a population of reward neurons receives input from an environmental input, and is coupled only to output neurons in a channel that the reward neuron is part of. If the environmental input for a channel is positive, the corresponding channel of a population of output neurons are rewarded and have their responses reinforced, otherwise the corresponding channel of a population of output neurons are punished and have their responses attenuated.
摘要翻译：用于加强学习和动作选择的神经模型包括多个通道，每个通道中的输入神经元群体，每个通道中的输出神经元群，每个通道中的输入神经元的每个群体耦合到每个信道中的每个输出神经元的群体，以及每个信道中的一群奖励神经元。奖励神经元群体的每个通道从环境输入接收输入，并且仅耦合到奖励神经元一部分的通道中的输出神经元。如果通道的环境输入为正，输出神经元群体的相应通道将得到奖励，并加强其响应，否则输出神经元群体的相应通道受到惩罚并使其响应减弱。

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