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    • 3. 发明申请
    • LASER ANNEALING TECHNIQUE FOR METAL OXIDE TFT
    • 用于金属氧化物膜的激光退火技术
    • WO2016048700A1
    • 2016-03-31
    • PCT/US2015/050006
    • 2015-09-14
    • QUALCOMM MEMS TECHNOLOGIES, INC.
    • HONG, John HyunchulFUNG, Tze-ChingKIM, CheonhongNOMURA, Kenji
    • H01L29/66H01L29/786
    • H01L21/02664H01L21/02565H01L29/66969H01L29/78693
    • This disclosure provides methods and apparatuses for annealing an oxide semiconductor in a thin film transistor (TFT). In one aspect, the method includes providing a substrate with a partially fabricated TFT structure formed on the substrate. The partially fabricated TFT structure can include an oxide semiconductor layer and a dielectric oxide layer on the oxide semiconductor layer. The oxide semiconductor layer is annealed by heating the dielectric oxide layer with an infrared laser under ambient conditions to a temperature below the melting temperature of the oxide semiconductor layer. The infrared laser radiation can be substantially absorbed by the dielectric oxide layer and can remove unwanted defects from the oxide semiconductor layer at an interface in contact with the dielectric oxide layer.
    • 本公开提供了在薄膜晶体管(TFT)中退火氧化物半导体的方法和装置。 在一个方面,该方法包括提供在基板上形成的部分制造的TFT结构的基板。 部分制造的TFT结构可以包括在氧化物半导体层上的氧化物半导体层和电介质氧化物层。 氧化物半导体层通过在环境条件下用红外激光器将电介质氧化物层加热到低于氧化物半导体层的熔融温度的温度来退火。 红外激光辐射可以被电介质氧化物层基本上吸收,并且可以在与电介质氧化物层接触的界面处从氧化物半导体层去除不想要的缺陷。
    • 4. 发明申请
    • MICROLENS COLOR SHIFT CONTROL
    • MICROLENS颜色变换控制
    • WO2016007247A1
    • 2016-01-14
    • PCT/US2015/034154
    • 2015-06-04
    • QUALCOMM MEMS TECHNOLOGIES, INC
    • HONG, John HyunchulMA, Jian Jim
    • G02B26/00G02B3/00G02F1/1335H04N9/31
    • G02B3/0068G02B3/0006G02B3/0062G02B26/001G09G3/3466G09G2300/0439
    • Disclosed herein is a dual lens system capable of maintaining a substantially constant color within a well-defined angular range of light incident on a reflective pixel. Each reflective pixel (or subpixel) of a display may include a primary lens and a field lens. The field lens may be positioned at a distance equal to a focal length of the primary lens. Each plane wave of incident light arriving at the primary lens aperture may be focused on a unique location of the focal plane, but may emerge from the field lens within the same range of angles. If a reflective pixel is positioned below the field lens, the reflected color should be substantially the same within a range of viewing angles. The range of angles may be defined by the numerical aperture of the lens system and by black mask material disposed between the reflective pixels or subpixels. Thus, a reflective display includes an array of reflective pixels; an array of primary lenses, each of the primary lenses corresponding to a distinct one of the reflective pixels; and an array of field lenses, each of the field lenses corresponding to a distinct one of the reflective pixels and one of the primary lenses, each of the field lenses being positioned at a distance from a corresponding primary lens, the distance being a focal length of the corresponding primary lens, each of the field lenses being disposed proximate a corresponding reflective pixel.
    • 本文公开了一种双透镜系统,其能够在入射在反射像素上的光的明确的角度范围内保持基本上恒定的颜色。 显示器的每个反射像素(或子像素)可以包括主透镜和场透镜。 场透镜可以被定位在等于主透镜的焦距的距离处。 到达主透镜孔的入射光的每个平面波可以聚焦在焦平面的唯一位置上,但是可以在相同的角度范围内从场透镜出射。 如果反射像素位于场透镜下方,则反射颜色应在视角范围内基本相同。 角度的范围可以由透镜系统的数值孔径和设置在反射像素或子像素之间的黑色掩模材料限定。 因此,反射显示器包括反射像素阵列; 主要透镜阵列,每个主要透镜对应于不同的一个反射像素; 和场透镜阵列,每个场透镜对应于反射像素中的不同一个和主透镜中的一个,每个场透镜位于与相应主透镜一定距离处,该距离为焦距 对应的主透镜,每个场透镜被设置在相应的反射像素附近。
    • 8. 发明申请
    • METHOD OF PATTERNING PILLARS
    • 图案方法
    • WO2015061096A1
    • 2015-04-30
    • PCT/US2014/060658
    • 2014-10-15
    • QUALCOMM MEMS TECHNOLOGIES, INC.
    • HONG, Brandon JohnMA, JianHONG, John HyunchulWEN, BingCHANG, Tallis Young
    • B81C1/00
    • C01B33/113B81C1/00031G02B5/00
    • The disclosed technology relates to methods of patterning elongated structures. In one aspect, a method of forming pillars includes providing a substrate and providing a plurality of beads on a surface of the substrate. Regions of the surface without a directly overlying bead are exposed. The method additionally includes selectively etching the exposed regions of the substrate between the beads such that a plurality of pillars is formed under areas masked by the beads. Selectively etching completely removes at least some of the beads. The pillars that are not covered by beads are etched, thereby leaving some pillars taller than others, with the pillar height pending on the amount of time a pillar was left exposed to etchant by a removed bead.
    • 所公开的技术涉及图案化细长结构的方法。 一方面,形成支柱的方法包括提供基底并在基底的表面上提供多个珠粒。 暴露出没有直接覆盖珠的表面区域。 该方法还包括选择性地蚀刻珠之间的衬底的暴露区域,使得多个柱形成在由珠掩蔽的区域之下。 选择性蚀刻完全除去珠粒中的至少一些。 没有被珠子覆盖的柱子被蚀刻,从而留下一些比其他柱子更高的柱子,其中柱子高度等待通过移除的珠子将柱子暴露于蚀刻剂的时间量。