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1. 发明申请

WO2012078580A1 PROCESS FOR SELECTIVELY REMOVING NITRIDE FROM SUBSTRATES 审中-公开
标题翻译：从基材中选择性地除去氮化物的方法
公开(公告)号：WO2012078580A1
公开(公告)日：2012-06-14
申请号：PCT/US2011/063441
申请日：2011-12-06
申请人： FSI INTERNATIONAL, INC. , RATKOVICH, Anthony S. , BUTTERBAUGH, Jeffery W. , BECKER, David S.
发明人： RATKOVICH, Anthony S. , BUTTERBAUGH, Jeffery W. , BECKER, David S.
IPC分类号： H01L21/302
CPC分类号： H01L21/31111 , H01L21/67051 , H01L21/6708
摘要： A method of selectively removing silicon nitride from a substrate comprises providing a substrate having silicon nitride on a surface thereof; and dispensing phosphoric acid and sulfuric acid onto the surface of the substrate as a mixed acid liquid stream at a temperature greater than about 150°C. In this method, water is added to a liquid solution of the mixed acid liquid stream as or after the liquid solution of the mixed acid liquid stream passes through a nozzle.
摘要翻译：从衬底选择性地去除氮化硅的方法包括在其表面上提供具有氮化硅的衬底; 并在高于约150℃的温度下将磷酸和硫酸作为混合酸液体流分配到基材的表面上。在该方法中，在混合酸液体液体的液体溶液通过喷嘴之后或之后，将水加入到混合酸液体液体的液体溶液中。

2. 发明申请

WO2006107550A2 BARRIER STRUCTURE AND NOZZLE DEVICE FOR USE IN TOOLS USED TO PROCESS MICROELECTRONIC WORKPIECES WITH ONE OR MORE TREATMENT FLUIDS 审中-公开
标题翻译：用于加工具有一种或多种处理液的微电子工件的工具中使用的障碍物结构和喷嘴装置
公开(公告)号：WO2006107550A2
公开(公告)日：2006-10-12
申请号：PCT/US2006/009353
申请日：2006-03-15
申请人： FSI INTERNATIONAL, INC. , COLLINS, Jimmy, D. , COOPER, Samuel, A. , EPPES, James, M. , ROSE, Alan, D. , MEKIAS, Kader
发明人： COLLINS, Jimmy, D. , COOPER, Samuel, A. , EPPES, James, M. , ROSE, Alan, D. , MEKIAS, Kader
IPC分类号： H01L21/00
CPC分类号： H01L21/67051 , H01L21/67017 , H01L21/6708 , Y10S134/902 , Y10T137/85938
摘要： Apparatuses, and related methods, for processing a workpiece that include a particular barrier structure that can overlie and cover a workpiece. Apparatuses, and related methods, for processing a workpiece that include a particular movable member that can be positioned over and moved relative to a workpiece. Apparatuses, and related methods, for processing a workpiece that include a particular ceiling structure that can overlie a processing chamber. Nozzle devices, and related methods, that include a particular annular body. Nozzle devices, and related methods, that include a particular first, second, and third nozzle structure.
摘要翻译：用于处理包括可覆盖和覆盖工件的特定阻挡结构的工件的装置和相关方法。用于处理工件的设备和相关方法，该工件包括特定的可移动构件，该可移动构件可被定位在工件上并相对于工件移动。用于处理包括可覆盖在处理室上的特定天花板结构的工件的设备和相关方法。喷嘴装置和相关方法包括特定的环形体。喷嘴装置和相关方法，其包括特定的第一，第二和第三喷嘴结构。

3. 发明申请

WO2005027202A1 SEMICONDUCTOR WAFER IMMERSION SYSTEMS AND TREATMENTS USING MODULATED ACOUSTIC ENERGY 审中-公开
标题翻译：半导体浸入式系统和使用调节能量的能量处理
公开(公告)号：WO2005027202A1
公开(公告)日：2005-03-24
申请号：PCT/US2004/029576
申请日：2004-09-10
申请人： FSI INTERNATIONAL, INC. , CHRISTENSON, Kurt, K. , WAGENER, Thomas, J.
发明人： CHRISTENSON, Kurt, K. , WAGENER, Thomas, J.
IPC分类号： H01L21/00
CPC分类号： H01L21/67057 , B08B3/12 , H01L21/67086
摘要： Systems and methods in which one or more wafers are immersed in a sonified liquid during the course of a treatment wherein the sound energy imparted to the liquid is modulated during at least a portion of a treatment. The frequency and/or amplitude of the sound energy may be modulated.
摘要翻译：在处理过程中将一个或多个晶片浸入超声波液体中的系统和方法，其中施加到液体的声能在至少一部分处理期间被调制。可以调制声能的频率和/或振幅。

4. 发明申请

WO2004036629A1 SPIN-COATING METHODS AND APPARATUSES FOR SPIN-COATING, INCLUDING PRESSURE SENSOR 审中-公开
标题翻译：旋转涂布方法和旋涂装置，包括压力传感器
公开(公告)号：WO2004036629A1
公开(公告)日：2004-04-29
申请号：PCT/US2003/029168
申请日：2003-09-10
申请人： FSI INTERNATIONAL, INC.
发明人： COLLINS, Jimmy, D. , COOPER, Samuel, A.
IPC分类号： H01L21/00
CPC分类号： H01L21/67253 , G03F7/162 , G03F7/3021 , H01L21/6715
摘要： Described are methods and apparatuses useful for spin-coating process solutions onto substrates, wherein the methods and apparatuses incorporate a pressure sensor to detect the pressure of a process solution, such as a pressure related to a beginning or end of a dispense of process solution from a dispenser; some preferred methods and apparatuses measure pressure of a photoresist, developer, water, solvent, or cleaner in a dispense line; and some preferred methods and apparatuses incorporate process control systems involving interrupted, parallel control methods.
摘要翻译：描述了可用于在基底上旋涂过程溶液的方法和装置，其中所述方法和装置包括用于检测过程溶液的压力的压力传感器，例如与分配过程溶液的开始或结束相关的压力，一个分配器一些优选的方法和装置测量分配线中的光致抗蚀剂，显影剂，水，溶剂或清洁剂的压力; 并且一些优选的方法和装置包括涉及中断的并行控制方法的过程控制系统。

5. 发明申请

WO2004025697A2 THERMAL PROCESS STATION WITH HEATED LID 审中-公开
标题翻译：带加热灯的热过程站
公开(公告)号：WO2004025697A2
公开(公告)日：2004-03-25
申请号：PCT/US2003/024089
申请日：2003-08-01
申请人： FSI INTERNATIONAL, INC.
发明人： NGUYEN, Vuong, P. , SIMS, Richard, E. , ZHU, Xiaoguang
IPC分类号： H01L
CPC分类号： F27B17/0025 , H01L21/67109 , H01L21/67126
摘要： Methods and apparatuses to improve the temperature uniformity of a workpiece being processed on a heated platen of a thermal processing station. A heated platen is enclosed in a housing incorporating an additional heat source that uniformly outputs thermal energy into the process chamber in which the heated platen is positioned. In preferred embodiments, this heat source is positioned in the lid of the housing. It is additionally preferred that the heated lid includes features that provide a gas flow path to introduce to and/or purge gas from the process chamber. In terms of photoresist performance, the improved thermal uniformity provided by using such an additional heat source in the housing, e.g., in the lid, offers improved line width control and line uniformity across a wafer.
摘要翻译：一种用于改善在热处理站的加热压板上加工的工件的温度均匀性的方法和装置。加热的压板被封闭在壳体中，该壳体包括额外的热源，其将热能均匀地输送到处理室中，加热的压板位于该处理室中。在优选实施例中，该热源位于壳体的盖中。另外优选地，加热的盖子包括提供气体流动路径以从处理室引入和/或吹扫气体的特征。在光致抗蚀剂性能方面，通过在壳体（例如盖）中使用这种附加热源提供的改进的热均匀性提供了改善的线宽度控制和跨晶片的线均匀性。

6. 发明申请

WO2002079705A2 NOZZLE DESIGN FOR GENERATING FLUID STREAMS USEFUL IN THE MANUFACTURE OF MICROELECTRONIC DEVICES 审中-公开
标题翻译：用于生成微电子器件制造中流体流的喷嘴设计
公开(公告)号：WO2002079705A2
公开(公告)日：2002-10-10
申请号：PCT/US2002/008316
申请日：2002-03-19
申请人： FSI INTERNATIONAL, INC.
发明人： KUNKEL, Pam , NARAYANSWAMI, Natraj , PATRIN, John, C.
IPC分类号： F25D17/02
CPC分类号： H01L21/67028 , B05B1/20 , B08B7/0092 , B24C1/003 , B24C5/04
摘要： Improved nozzle design that discharges more powerful, more focused fluid streams through a series of nozzle orifices distributed along a length of the nozzle. The present invention may be incorporated into a wide range of microelectronic device manufacturing processes and equipment types for which an array of more forceful, more focused process streams are desired for treating microelectronic workpieces. The present invention is particularly useful to cryogenically clean microelectronic workpieces, where the improvements allow the conventionally more troublesome smaller contaminant particles to be cleaningly removed with greater particle removal efficiency.
摘要翻译：改进的喷嘴设计通过沿喷嘴长度分布的一系列喷嘴孔排放更强大，更集中的流体流。本发明可以结合到各种各样的微电子器件制造工艺和设备类型中，对于这些工艺和设备类型，需要一系列更有力，更集中的工艺流来处理微电子工件。本发明对于低温清洁微电子工件特别有用，其中改进允许传统上更麻烦的较小污染物颗粒被清洁地移除并具有更大的颗粒移除效率。

7. 发明申请

WO1998019336A1 UV/HALOGEN TREATMENT FOR DRY OXIDE ETCHING 审中-公开
标题翻译：用于干燥氧化蚀刻的UV /卤素处理
公开(公告)号：WO1998019336A1
公开(公告)日：1998-05-07
申请号：PCT/US1997019518
申请日：1997-10-24
申请人： FSI INTERNATIONAL, INC.
发明人： FSI INTERNATIONAL, INC. , FAYFIELD, Robert, T. , SCHWAB, Brent, D.
IPC分类号： H01L21/311
CPC分类号： H01L21/31116
摘要： The uniformity of SiO2 etching over the surface area of a substrate using a conventional SiO2 etching reaction, such as a HF/ROH reaction where R is H or alkyl, is improved when the substrate is pretreated before the etch reaction. In the pretreatment the substrate within a process chamber is exposed to UV illuminated halogen gas. Suitable halogen gases are fluorine and chlorine. Oxygen may optionally also be included with the halogen gas. The pretreatment renders the etching uniformity results substantially independent of the storage history of the wafer.
摘要翻译：当在蚀刻反应之前预处理衬底时，使用常规的SiO 2蚀刻反应（例如其中R为H或烷基的HF / ROH反应），SiO 2蚀刻在衬底的表面积上的均匀性得到改善。在预处理中，处理室内的衬底暴露于UV照射的卤素气体中。合适的卤素气体是氟和氯。卤素气体也可以包含氧气。预处理使蚀刻均匀性基本上与晶片的存储历史无关。

8. 发明申请

WO2013003013A1 ACID TREATMENT STRATEGIES USEFUL TO FABRICATE MICROELECTRONIC DEVICES AND PRECURSORS THEREOF 审中-公开
标题翻译：用于制造微电子设备及其前身的酸处理策略
公开(公告)号：WO2013003013A1
公开(公告)日：2013-01-03
申请号：PCT/US2012/041832
申请日：2012-06-11
申请人： FSI INTERNATIONAL, INC. , DEKRAKER, David
发明人： DEKRAKER, David
IPC分类号： C23G1/02
CPC分类号： H01L21/67051 , H01L21/02052 , H01L21/02057
摘要： A method of treating one or more wafers is provided. The method comprises the steps of: a) providing at least one wafer, that has first and second opposed major faces and at least one feature, such as a metal silicide, that is sensitive to a neutralizing chemistry on the first major face; b) causing an acidic chemistry, such as a sulfuric acid and/or phosphoric acid, to contact the first major face of the wafer and causing the wafer to spin; c) after causing the acidic chemistry to contact the wafer, causing a non-etching rinsing fluid to contact the first major face while the wafer is spinning; and d) during at least a portion of the time that the non-etching rinsing fluid is caused to contact the first major face of the spinning wafer, causing a neutralizing liquid to contact the second major face of the spinning wafer.
摘要翻译：提供一种处理一个或多个晶片的方法。该方法包括以下步骤：a）提供至少一个晶片，其具有第一和第二相对的主面以及对第一主面上的中和化学物质敏感的至少一个特征，例如金属硅化物; b）使酸性化学物质如硫酸和/或磷酸与晶片的第一主面接触并使晶片旋转; c）在使酸性化学物质接触晶片之后，在晶片旋转时使非蚀刻冲洗液接触第一主面; 以及d）在非蚀刻冲洗液与纺丝晶片的第一主面接触的至少一段时间内，使中和液体接触旋转晶片的第二主面。

9. 发明申请

WO2007062111A1 PROCESS FOR REMOVING MATERIAL FROM SUBSTRATES 审中-公开
标题翻译：从基材中去除材料的方法
公开(公告)号：WO2007062111A1
公开(公告)日：2007-05-31
申请号：PCT/US2006/045190
申请日：2006-11-22
申请人： FSI INTERNATIONAL, INC. , CHRISTENSON, Kurt, Karl , HANESTAD, Ronald, J. , RUETHER, Patricia, Ann , WAGENER, Thomas, J.
发明人： CHRISTENSON, Kurt, Karl , HANESTAD, Ronald, J. , RUETHER, Patricia, Ann , WAGENER, Thomas, J.
IPC分类号： B08B3/08 , B08B7/00 , G03F7/42
CPC分类号： B05B1/00 , B08B3/08 , B08B7/00 , B08B2230/01 , G03F7/423 , H01L21/02063 , H01L21/02071 , H01L21/30604 , H01L21/31105 , H01L21/31133 , H01L21/6708
摘要： A method of removing materials, and preferably photoresist, from a substrate (18) comprises dispensing a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors and having a water/ sulfuric acid molar ratio of no greater than 5:1 onto an material coated substrate in an amount effective to substantially uniformly coat the material coated substrate. The substrate is preferably heated to a temperature of at least about 9O°C, either before, during or after dispensing of the liquid sulfuric acid composition. After the substrate is at a temperature of at least about 9O°C, the liquid sulfuric acid composition is exposed to water vapor in an amount effective to increase the temperature of the liquid sulfuric acid composition above the temperature of the liquid sulfuric acid composition prior to exposure to the water vapor. The substrate is then preferably rinsed to remove the material .
摘要翻译：从衬底（18）去除材料（优选光致抗蚀剂）的方法包括分配包含硫酸和/或其干燥物质和前体并且具有不大于5:1的水/硫酸摩尔比的液体硫酸组合物以有效基本上均匀地涂覆涂覆有材料的基材的量涂覆到涂覆有材料的基材上。优选在液体硫酸组合物分配之前，期间或之后将基材加热至至少约90℃的温度。在基底处于至少约90℃的温度之后，将液体硫酸组合物暴露于水蒸气中，其量可有效地将液体硫酸组合物的温度升高到高于液体硫酸组合物的温度之前，暴露于水蒸汽。然后优选冲洗基材以除去材料。

10. 发明申请

WO2006007453A1 CLEANING PROCESS FOR SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：半导体衬底的清洁工艺
公开(公告)号：WO2006007453A1
公开(公告)日：2006-01-19
申请号：PCT/US2005/021712
申请日：2005-06-20
申请人： FSI INTERNATIONAL, INC. , LEE, Nam, Pyo , CLARK, Philip , SCHWAB, Brent, D.
发明人： LEE, Nam, Pyo , CLARK, Philip , SCHWAB, Brent, D.
IPC分类号： H01L21/306
CPC分类号： H01L21/02052 , B08B3/08 , C11D7/08 , C11D11/0047 , H01L21/0206
摘要： The present invention relates to cleaning processes for semiconductor substrates. More particularly, the present inventive method can provide enhanced particle removal efficiencies at a given material loss. In fact, in certain embodiments, the present method can achieve particle removal efficiencies of at least about 90%, while yet removing less than about 2 angstroms of any oxide present on the semiconductor substrate. As such, the present methods find particular applicability in the processing of advanced technology nodes.
摘要翻译：本发明涉及半导体基板的清洗工艺。更具体地，本发明的方法可以在给定的材料损失下提供增强的颗粒去除效率。事实上，在某些实施方案中，本发明的方法可以实现至少约90％的颗粒去除效率，同时除去少于约2埃的半导体衬底上存在的任何氧化物。因此，本方法在高级技术节点的处理中具有特殊的适用性。

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