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81. 发明申请

WO2022047898A1 显示面板和显示装置审中-公开
公开(公告)号：WO2022047898A1
公开(公告)日：2022-03-10
申请号：PCT/CN2020/120905
申请日：2020-10-14
申请人：深圳市华星光电半导体显示技术有限公司
发明人：崔巍 , 江淼 , 姚江波 , 陈黎暄 , 张鑫
IPC分类号： H01L31/0232 , H01L31/113 , G06F3/042 , G01B7/00
摘要：一种显示面板和显示装置，显示面板中，上转换材料层(20)用于将交互光线的第一波段转换为范围较小的第二波段；光感电路中的光感晶体管(T1)用于将转换波段后的交互光线的光强信号转换为电信号；位置检测电路用于根据电信号确定交互光线的照射位置。显示面板实现了与波长较长的光线间的交互。

82. 发明申请

WO2021184407A1 一种视网膜形态光电传感阵列及其图片卷积处理方法审中-公开
公开(公告)号：WO2021184407A1
公开(公告)日：2021-09-23
申请号：PCT/CN2020/081313
申请日：2020-03-26
申请人：南京大学
发明人：缪峰 , 梁世军 , 王晨宇
IPC分类号： H01L31/113 , H01L31/0224 , H01L31/18 , H01L27/146 , G06N3/08 , G06N3/04
摘要：本发明公开了一种视网膜形态光电传感阵列及其图片卷积处理方法，该光电传感器件其是在基底上具有底电极、电介质层、沟道层、源电极和漏电极的垂直堆叠的异质结结构，所述源电极和漏电极相互对峙，并置于所述沟道层的两端，所述底电极、源电极和漏电极的材料为柔性电极所用材料、惰性金属或者半金属，所述电介质层的材料为绝缘材料，所述沟道层材料为双极性材料，所述基底包括衬底以及生长于衬底表面的绝缘材料层。本发明利用新材料的物理特性，设计全新的类脑光电传感器件，更好模拟人类视觉系统的细胞功能，实现了同时传感、信息处理和识别的可重构人工神经网络。

83. 发明申请

WO2019024773A1 PHOTODETECTION FILM, PHOTODETECTION SENSOR AND PHOTODETECTION DISPLAY APPARATUS INCLUDING THE PHOTODETECTION FILM, AND METHOD OF MAKING THE PHOTODETECTION FILM 审中-公开
公开(公告)号：WO2019024773A1
公开(公告)日：2019-02-07
申请号：PCT/CN2018/097356
申请日：2018-07-27
申请人： SHANGHAI HARVEST INTELLIGENCE TECHNOLOGY CO., LTD.
发明人： HUANG, Jiandong
IPC分类号： H01L31/113 , H01L31/112 , H01L31/0224
摘要： A photodetection film includes a photodetection transistor. The photodetection transistor includes a gate electrode, a gate insulating layer surroundingly formed on the gate electrode, at least one drain terminal disposed on the gate insulating layer and is spaced apart from the gate electrode, at least one source terminal disposed on the gate insulating layer and is spaced apart from the gate electrode and the at least one drain terminal, and a light-absorbing semiconductor layer disposed on the gate insulating layer and extends between the drain and source terminals. A photodetection sensor, a photodetection display apparatus, and a method of making the photodetection film are also disclosed.

84. 发明申请

WO2018018026A1 QUANTUM FILM PIXELS WITH LOW READOUT NOISE 审中-公开
标题翻译：具有低读数噪声的量子薄膜像素
公开(公告)号：WO2018018026A1
公开(公告)日：2018-01-25
申请号：PCT/US2017/043410
申请日：2017-07-21
申请人： INVISAGE TECHNOLOGIES, INC.
发明人： BOCK, Nikolai , MANDELLI, Emanuele , BEILEY, Zach M. , PARK, Jae
IPC分类号： H01L31/113
CPC分类号： H04N5/3575 , H01L27/14609 , H01L27/1461 , H01L27/14614 , H01L27/1462 , H01L27/14636 , H01L31/035218 , H04N5/3745 , H04N5/37452 , H04N5/379
摘要： Generally discussed herein are imaging devices and corresponding circuitry and methods of using and making the same. An image sensor device may include pixel circuitry, the pixel circuitry comprising a photosensitive material layer, circuitry including first, second, and third electrodes and a storage device, the first electrode on a first surface of the photosensitive material layer and the second and third electrodes on a second surface of the photosensitive material layer, the first surface opposite the second surface, electrical interconnect circuitry electrically coupling the second electrode and the storage device, and a dielectric material situated between the third electrode and the photosensitive material layer.
摘要翻译：这里一般讨论的是成像装置和相应的电路以及使用和制造它们的方法。图像传感器装置可以包括像素电路，像素电路包括光敏材料层，包括第一电极，第二电极和第三电极以及存储装置的电路，第一电极位于光敏材料层的第一表面上，并且第二电极和第三电极在感光材料层的第二表面上，与第二表面相对的第一表面，电连接第二电极和存储器件的电互连电路以及位于第三电极和感光材料层之间的电介质材料。

85. 发明申请

WO2006076086A3 TIC MOS DEVICES ON HIGH-K-DIELECTRIC GATE STACKS 审中-公开
标题翻译： TIC MOS器件在高K电介质栅极堆叠
公开(公告)号：WO2006076086A3
公开(公告)日：2009-04-16
申请号：PCT/US2005043552
申请日：2005-12-02
申请人： IBM , CALLEGARI ALESSANDRO C , GRIBELYUK MICHAEL A , LACEY DIANNE L , MCFEELY FENTON R , SAENGER KATHERINE L , ZAFAR SUFI
发明人： CALLEGARI ALESSANDRO C , GRIBELYUK MICHAEL A , LACEY DIANNE L , MCFEELY FENTON R , SAENGER KATHERINE L , ZAFAR SUFI
IPC分类号： H01L29/94 , H01L29/76 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/4966 , C23C14/0036 , C23C14/0635 , H01L21/28088 , H01L29/513 , H01L29/517 , H01L29/665
摘要： A compound metal comprising TiC which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer is provided as well as a method of fabricating the TiC compound metal. Furthermore, the TiC metal compound of the present invention is a very efficient oxygen diffusion barrier at 1000°C allowing very aggressive equivalent oxide thickness (EOT) and inversion layer thickness scaling below 14 Å in a p-metal oxide semiconductor (pMOS) device.
摘要翻译：提供了包含TiC的复合金属，其是在包括高k电介质和界面层的栅极堆叠上具有约4.75至约5.3，优选约5e的功函数的功函数的热电稳定的p型金属，以及制造TiC复合金属的方法。此外，本发明的TiC金属化合物在1000℃下是非常有效的氧扩散阻挡层，在p-金属氧化物半导体（pMOS）器件中允许非常有侵蚀性的等效氧化物厚度（EOT）和低于14的反型层厚度标度。

86. 发明申请

WO2008084650A3 PHOTOSENSOR 审中-公开
标题翻译：光传感器
公开(公告)号：WO2008084650A3
公开(公告)日：2008-09-18
申请号：PCT/JP2007074587
申请日：2007-12-14
申请人： CASIO COMPUTER CO LTD , MATSUMOTO HIROSHI , YAMAGUCHI IKUHIRO , KOBAYASHI HIROKAZU
发明人： MATSUMOTO HIROSHI , YAMAGUCHI IKUHIRO , KOBAYASHI HIROKAZU
IPC分类号： H01L31/0224 , H01L29/417 , H01L29/786 , H01L31/0392 , H01L31/113
CPC分类号： H01L31/022408 , H01L27/14678 , H01L31/03921 , H01L31/1136 , Y02E10/50
摘要： A photosensor includes a semiconductor thin film (5) for photoelectric conversion having a first side portion and a second side portion. A source electrode (9) extends in the longitudinal direction of the semiconductor thin film (5) and has a side edge portion (9b, 9c) that overlaps the first side portion of the semiconductor thin film (5), and a drain electrode (10) extends in the longitudinal direction and has a side edge portion (10b, 10c) that overlaps the second side portion of the semiconductor thin film (5). At least one of the side edge portions (9b, 9c, 10b, 10c) of the source and drain electrodes (9, 10) has protruding portions (9b, 10b) which are arranged along the longitudinal direction and which overlap the semiconductor thin film (5), and notched portions (9c, 10c) formed between the protruding portions (9b, 10b). An ohmic contact layer (7, 8) is formed between the semiconductor thin film (5) and the protruding portions (9b, 10b) of the at least one of the side edge portions (9b, 9c, 10b, 10c) of the source and drain electrodes (9, 10).
摘要翻译：光电传感器包括具有第一侧部和第二侧部的用于光电转换的半导体薄膜（5）。源电极（9）在半导体薄膜（5）的长度方向上延伸，具有与半导体薄膜（5）的第一侧面重叠的侧缘部（9b，9c）和漏电极 10）在长度方向上延伸并且具有与半导体薄膜（5）的第二侧部重叠的侧边缘部分（10b，10c）。源电极和漏电极（9,10）的侧边缘部分（9b，9c，10b，10c）中的至少一个具有突出部分（9b，10b），沿着纵向方向布置并与半导体薄膜（5），以及形成在突出部（9b，10b）之间的切口部（9c，10c）。在半导体薄膜（5）和源极的至少一个侧边缘部分（9b，9c，10b，10c）的突出部分（9b，10b）之间形成欧姆接触层（7,8）和漏电极（9,10）。

87. 发明申请

WO2008084650A2 PHOTOSENSOR 审中-公开
标题翻译：光传感器
公开(公告)号：WO2008084650A2
公开(公告)日：2008-07-17
申请号：PCT/JP2007/074587
申请日：2007-12-14
申请人： CASIO COMPUTER CO., LTD. , MATSUMOTO, Hiroshi , YAMAGUCHI, Ikuhiro , KOBAYASHI, Hirokazu
发明人： MATSUMOTO, Hiroshi , YAMAGUCHI, Ikuhiro , KOBAYASHI, Hirokazu
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/113
CPC分类号： H01L31/022408 , H01L27/14678 , H01L31/03921 , H01L31/1136 , Y02E10/50
摘要： A photosensor includes a semiconductor thin film (5) for photoelectric conversion having a first side portion and a second side portion. A source electrode (9) extends in the longitudinal direction of the semiconductor thin film (5) and has a side edge portion (9b, 9c) that overlaps the first side portion of the semiconductor thin film (5), and a drain electrode (10) extends in the longitudinal direction and has a side edge portion (10b, 10c) that overlaps the second side portion of the semiconductor thin film (5). At least one of the side edge portions (9b, 9c, 10b, 10c) of the source and drain electrodes (9, 10) has protruding portions (9b, 10b) which are arranged along the longitudinal direction and which overlap the semiconductor thin film (5), and notched portions (9c, 10c) formed between the protruding portions (9b, 10b). An ohmic contact layer (7, 8) is formed between the semiconductor thin film (5) and the protruding portions (9b, 10b) of the at least one of the side edge portions (9b, 9c, 10b, 10c) of the source and drain electrodes (9, 10).
摘要翻译：光电传感器包括用于光电转换的半导体薄膜（5），其具有第一侧部分和第二侧部分。源电极（9）沿半导体薄膜（5）的纵向延伸并且具有与半导体薄膜（5）的第一侧部重叠的侧边部（9b，9c）和漏电极（ 10）沿纵向延伸并具有与半导体薄膜（5）的第二侧部重叠的侧边部（10b，10c）。源电极和漏电极（9,10）的侧边缘部分（9b，9c，10b，10c）中的至少一个具有沿着纵向方向布置的突出部分（9b，10b），其与半导体薄膜（5）以及形成在突起部分（9b，10b）之间的凹口部分（9c，10c）。在半导体薄膜（5）与源极的至少一个侧边缘部分（9b，9c，10b，10c）的突出部分（9b，10b）之间形成欧姆接触层（7,8）和漏电极（9,10）。

88. 发明申请

WO2006073800A3 METHOD AND APPARATUS FOR PROXIMATE CMOS PIXELS 审中-公开
标题翻译：近似CMOS像素的方法和装置
公开(公告)号：WO2006073800A3
公开(公告)日：2007-11-01
申请号：PCT/US2005046086
申请日：2005-12-20
申请人： ESS TECHNOLOGY INC , TOROS ZEYNEP , MANN RICHARD , BENCUYA SELIM
发明人： TOROS ZEYNEP , MANN RICHARD , BENCUYA SELIM
IPC分类号： H04N3/14 , H01L31/06 , H01L31/062 , H01L31/113 , H04N5/335
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H04N5/3575 , H04N5/3597 , H04N5/361
摘要： An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit.
摘要翻译：公开了一种改进的CMOS传感器集成电路，以及制作电路的电路和计算机可读描述的方法。

89. 发明申请

WO2006121564A3 HIGH VOLTAGE FIELD EFFECT DEVICE AND METHOD 审中-公开
标题翻译：高电压场效应器件及方法
公开(公告)号：WO2006121564A3
公开(公告)日：2007-05-03
申请号：PCT/US2006013737
申请日：2006-04-07
申请人： FREESCALE SEMICONDUCTOR INC , DE FRESART EDOUARD D , DE SOUZA RICHARD J , LIN XIN , MORRISON JENNIFER H , PARRIS PATRICE M , ZITOUNI MOANISS
发明人： DE FRESART EDOUARD D , DE SOUZA RICHARD J , LIN XIN , MORRISON JENNIFER H , PARRIS PATRICE M , ZITOUNI MOANISS
IPC分类号： H01L29/76 , H01L21/336 , H01L21/8234 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7835 , H01L29/0847 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： Methods and apparatus are provided for a MOSFET (50, 99, 199) exhibiting increased source-drain breakdown voltage (BVdss). Source (S) (70) and drain (D) (76) are spaced apart by a channel (90) underlying a gate (84) and one or more carrier drift spaces (92, 92') serially located between the channel (90) and the source (70, 70') or drain (76, 76'). A buried region (96, 96') of the same conductivity type as the drift space (92, 92') and the source (70, 70') or drain (76, 76') is provided below the drift space (92, 92'), separated therefrom in depth by a narrow gap (94, 94') and ohmically coupled to the source (70, 70') or drain (76, 76'). Current flow (110) through the drift space produces a potential difference (Vt) across this gap (94, 94'). As the S-D voltage (Vo) and current (109, Io) increase, this difference (Vt) induces high field conduction between the drift space (92, 92') and the buried region (96, 96') and diverts part (112, It) of the S-D current (109, Io) through the buried region (96, 96') and away from the near surface portions of the drift space (92, 92') where breakdown generally occurs. Thus, BVdss is increased
摘要翻译：为具有增加的源 - 漏击穿电压（BVdss）的MOSFET（50,99,199）提供了方法和装置。源极（S）（70）和漏极（D）（76）通过栅极（84）下面的沟道（90）和串联地位于沟道（90）之间的一个或多个载流子漂移空间（92,92'）间隔开）和源极（70,70'）或漏极（76,76'）。与漂移空间（92,92'）和源极（70,70'）或漏极（76,76'）相同的导电类型的掩埋区域（96,96'）设置在漂移空间（92,92'）的下方， 92'），通过狭窄的间隙（94,94'）深度地分离，并且与欧姆耦合到源极（70,70'）或漏极（76,76'）。通过漂移空间的电流（110）在该间隙（94,94'）上产生电位差（Vt）。随着SD电压（Vo）和电流（109，Io）的增加，该差值（Vt）引起漂移空间（92,92'）和掩埋区域（96,96'）之间的高场导通，并且转移部分，It）通过掩埋区域（96,96'）并远离漂移空间（92,92'）的通常发生击穿的漂移空间（92,92'）的近表面部分的SD电流（109，Io）。因此，BVdss增加

90. 发明申请

WO2005117144A3 GATE DRIVER OUTPUT STAGE WITH BIAS CIRCUIT FOR HIGH AND WIDE OPERATING VOLTAGE RANGE 审中-公开
标题翻译：具有偏置电路的栅极驱动器输出级适用于高宽工作电压范围
公开(公告)号：WO2005117144A3
公开(公告)日：2007-01-25
申请号：PCT/US2005017273
申请日：2005-05-18
申请人： INT RECTIFIER CORP , JEONG JONG-DEOG
发明人： JEONG JONG-DEOG
IPC分类号： G05F1/10 , G05F3/02 , H01L21/761 , H01L27/092 , H01L31/113 , H03K19/003
CPC分类号： H03K19/00315 , H01L21/761 , H01L27/092
摘要： NEW ABSTRACT A simple, low cost, gate driver (20) and bias circuit (35) provides for a wider operating voltage range exceeding the normal component breakdown voltage of components such as NMOS and PMOS transistors ( M1-M3). A CMOS process with an epitaxial layer as bulk and p-type substrate is used to implement the circuit in this example.
摘要翻译：新摘要一个简单，低成本的栅极驱动器（20）和偏置电路（35）提供了一个更宽的工作电压范围，超过了NMOS和PMOS晶体管（M1-M3）等组件的正常组件击穿电压。在这个例子中，使用具有外延层作为体和p型衬底的CMOS工艺来实现电路。

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