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81. 发明申请

WO1997040214A1 PROCESS FOR THE PREPARATION OF CONFORMED MATERIALS BASED ON BINARY OR TERNARY EUTECTIC ZIRCONIA COMPOUNDS 审中-公开
标题翻译：基于二元或三级保护性ZIRCONIA化合物制备合格材料的方法
公开(公告)号：WO1997040214A1
公开(公告)日：1997-10-30
申请号：PCT/ES1997000091
申请日：1997-04-15
申请人： CONSEJO SUPERIOR INVESTIGACIONES CIENTIFICAS , DE LA FUENTE LEIS, Germán , MERINO RUBIO, Rosa Isabel , ORERA CLEMENTE, Victor Manuel , PEÑA TORRE, José Ignacio
发明人： CONSEJO SUPERIOR INVESTIGACIONES CIENTIFICAS
IPC分类号： C30B21/04
CPC分类号： C30B29/22 , C04B35/653 , C30B13/00 , C30B29/16 , H01M8/1253 , Y02E60/525 , Y02P70/56
摘要： The invention relates to the preparation of material with eutectic micrometric structures and based on oxyde mixtures, conformed with milli and submillimetric dimensions through the zonal fusion by laser with different optical systems for focussing and controlling the laser beams. They can be used in the production and storage of energy, as heating elements, refractories, cathodes for air plasmas, electrodes, components for combustion cells, oxygen gas microsensors, etc.
摘要翻译：本发明涉及具有共晶微米结构并基于氧化物混合物的材料的制备，符合毫米和亚毫米尺寸，通过激光与不同光学系统的区域融合来聚焦和控制激光束。它们可用于生产和储存能量，如加热元件，耐火材料，空气等离子体阴极，电极，燃烧电池组件，氧气微量传感器等。

82. 发明申请

WO1995016061A1 PROCESS FOR GROWING AN EPITAXIAL FILM ON AN OXIDE SURFACE AND PRODUCT 审中-公开
标题翻译：在氧化物表面和产品上生长外延膜的方法
公开(公告)号：WO1995016061A1
公开(公告)日：1995-06-15
申请号：PCT/US1994014098
申请日：1994-12-08
申请人： MARTIN MARIETTA ENERGY SYSTEMS, INC.
发明人： MARTIN MARIETTA ENERGY SYSTEMS, INC. , MCKEE, Rodney, A. , WALKER, Frederick, J.
IPC分类号： C30B25/02
CPC分类号： G02B6/131 , C30B23/02 , C30B29/16 , C30B29/22 , C30B29/32 , Y10S438/967
摘要： A process and structure wherein a film comprised of a perovskite or a spinel is built epitaxially upon a surface (22), such as an alkaline earth oxide surface, involves the epitaxial build up of alternating constituent metal oxide planes of the perovskite or spinel (20, 26, 28). The first layer of metal oxide built upon the surface (22) includes a metal element which provides a small cation in the crystalline structure of the perovskite or spinel, and the second layer of metal oxide built upon the surface (22) includes a metal element which provides a large cation in the crystalline structure of the perovskite or spinel. The layering sequence involved in the film build up reduces problems which would otherwise result from the interfacial electrostatics at the first atomic layers, and these oxides can be stabilized as commensurate thin films at a unit cell thickness or grown with high crystal quality to thicknesses of 0.5-0.7 theta m for optical device applications.
摘要翻译：一种工艺和结构，其中由钙钛矿或尖晶石构成的膜外延地在诸如碱土金属氧化物表面的表面（22）上构建，包括钙钛矿或尖晶石的交替构成金属氧化物平面的外延生长（20 ，26,28）。构建在表面（22）上的第一层金属氧化物包括在钙钛矿或尖晶石的晶体结构中提供小阳离子的金属元素，并且构建在表面（22）上的第二金属氧化物层包括金属元素其在钙钛矿或尖晶石的晶体结构中提供了大的阳离子。涉及薄膜堆积的层叠顺序减少了否则由第一原子层的界面静电导致的问题，并且这些氧化物可被稳定为单位单元厚度的相当薄膜或以高结晶质量生长至厚度为0.5 -0.7θm用于光学器件应用。

83. 发明申请

WO1995013409A1 METHOD OF DEPOSITING MONOMOLECULAR LAYERS 审中-公开
标题翻译：沉积单分子层的方法
公开(公告)号：WO1995013409A1
公开(公告)日：1995-05-18
申请号：PCT/FR1994001321
申请日：1994-11-10
申请人： LEWINER, Jacques , UFINNOVA , LAGUES, Michel
发明人： LEWINER, Jacques , UFINNOVA
IPC分类号： C30B23/02
CPC分类号： C30B23/02 , C30B29/22
摘要： Method of vacuum depositing a monomolecular layer on a surface, the monomolecular layer comprising at least one element selected from groups IIa, IIIa, IVa, VIIIa, Ib, IIb, IIIb, Vb of the periodic table. The method consists in heating said surface to a predetermined temperature (T) of less than 600 DEG C and vacuum evaporating at least the above-mentioned element for the purpose of depositing it on the receptor surface, the total atomic flow of the element(s) onto the receptor surface being from 10 to 10 atoms/cm .s. According to the invention, the formation of the monomolecular layer is monitored in real time, and evaporation of the element is stopped when the complete formation of the monomolecular layer is detected.
摘要翻译：在表面上真空沉积单分子层的方法，该单分子层包含选自元素周期表IIa，IIIa，IVa，VIIIa，Ib，IIb，IIIb，Vb族中的至少一种元素。该方法包括将所述表面加热到小于600℃的预定温度（T），并且真空蒸发至少上述元素以便将其沉积在受体表面上，元素的总原子流）在受体表面上为10 12至10 15个/ cm 2。根据本发明，实时监测单分子层的形成，当检测到单分子层的完全形成时，元件的蒸发停止。

84. 发明申请

WO1993004221A1 METHOD AND APPARATUS FOR THE ELECTRODEPOSITION OF BISMUTH BASED MATERIALS AND SUPERCONDUCTORS 审中-公开
标题翻译：基于双相材料和超导体的电沉积的方法和装置
公开(公告)号：WO1993004221A1
公开(公告)日：1993-03-04
申请号：PCT/US1992006814
申请日：1992-08-13
申请人： UNIVERSITY OF GEORGIA RESEARCH FOUNDATION
发明人： UNIVERSITY OF GEORGIA RESEARCH FOUNDATION , NORTON, Michael, L. , TANG, Horng-Yi
IPC分类号： C25C03/34
CPC分类号： C30B29/22 , C25B1/00 , C30B9/00 , H01L39/2429 , Y10S505/729 , Y10S505/737 , Y10S505/784
摘要： The electrode position of bismuth based materials and superconductors is achieved under isothermal, constant potential conditions using a three electrode (20), one compartment cell (10) geometry operating at a temperature below about 450 °C.

85. 发明申请

WO1991019026A1 GROWTH OF A,B-AXIS ORIENTED PEROVSKITE THIN FILMS 审中-公开
标题翻译： A轴，双向轴向薄膜薄膜的生长
公开(公告)号：WO1991019026A1
公开(公告)日：1991-12-12
申请号：PCT/US1991000726
申请日：1991-02-04
申请人： BELL COMMUNICATIONS RESEARCH, INC.
发明人： BELL COMMUNICATIONS RESEARCH, INC. , INAM, Arun , RAMESH, Ramamoorthy , ROGERS, Charles, Thorne, Jr.
IPC分类号： C30B23/02
CPC分类号： H01L39/2496 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/2448 , H01L39/2461 , Y10S505/701 , Y10S505/702 , Y10S505/729 , Y10S505/732
摘要： A method, and the resulting structure, of growing a superconducting perovskite thin film (34) of, for example, YBa2Cu3O7-x. A buffer layer (32) of, for example, the perovskite PrBa2Cu3O7-y, is grown on a crystalline (001) substrate (30) under conditions which favor growth of a,b-axis oriented material. Then the YBa2Cu3O7-x layer (34) is deposited on the buffer layer (32) under changed growth conditions that favor growth of c-axis oriented material on the substrate, for example, the substrate temperature is raised by 110 DEG C. However, the buffer layer acts as a template that forces the growth of a,b-axis YBa2Cu3O7-x, whichnonetheless shows a superconducting transition temperature near that of c-axis oriented films.
摘要翻译：一种制造例如YBa2Cu3O7-x的超导钙钛矿薄膜（34）的方法和所得到的结构。在有利于b轴取向材料生长的条件下，在结晶（001）衬底（30）上生长例如钙钛矿PrBa2Cu3O7-y的缓冲层（32）。然后，YBa2Cu3O7-x层（34）在改善的生长条件下沉积在缓冲层（32）上，该条件有利于衬底上c轴取向材料的生长，例如衬底温度升高到110℃。然而，缓冲层用作迫使B轴YBa2Cu3O7-x的生长的模板，其然而在c轴取向膜附近显示超导转变温度。

86. 发明申请

WO1991014028A1 HIGH TEMPERATURE SUPERCONDUCTING FILMS ON ALUMINUM OXIDE SUBSTRATES 审中-公开
标题翻译：氧化铝基体上的高温超导膜
公开(公告)号：WO1991014028A1
公开(公告)日：1991-09-19
申请号：PCT/US1991001788
申请日：1991-03-18
申请人： CONDUCTUS, INC. , NEWMAN, Nathan , CHAR, Kookrin
发明人： CONDUCTUS, INC.
IPC分类号： C30B25/04
CPC分类号： H01L39/2461 , C30B23/02 , C30B25/02 , C30B29/22 , C30B29/225
摘要： High temperature superconducting layered structures for use in microwave applications are fabricated by depositing a thin film of epitaxial buffer (14) such as strontium titanate or calcium titanate by a deposition process such as laser ablation on a low loss sapphire substrate (12) followed by depositing an in-situ grown film of high temperature superconductor (16) such as Y1Ba2Cu3O7 on the buffer layer. The YBCO film has low surface resistance and a narrow transition temperature.
摘要翻译：通过在低损耗蓝宝石衬底（12）上沉积诸如激光烧蚀的沉积工艺，然后沉积（例如）沉积诸如钛酸锶或钛酸钙的外延缓冲层（14）的薄膜来制造用于微波应用的高温超导层状结构缓冲层上的高温超导体（16）如Y1Ba2Cu3O7的原位生长膜。 YBCO膜具有低表面电阻和较窄的转变温度。

87. 发明申请

WO8804882A2 PROCESS FOR PRODUCING AN OPTICAL WAVEGUIDE AND THE PRODUCT THEREFROM 审中-公开
标题翻译：生产光波导和产品的方法
公开(公告)号：WO8804882A2
公开(公告)日：1988-07-14
申请号：PCT/US8703237
申请日：1987-12-15
申请人： DU PONT
发明人： BIERLEIN JOHN DAVID , BRIXNER LOTHAR HEINRICH , FERRETTI AUGUST , HSU WILLIAM YANG-HSING
IPC分类号： C30B33/00 , G02B6/12 , G02B6/13 , G02B6/134 , G02F1/355
CPC分类号： G02F1/3553 , C30B29/14 , C30B29/22 , C30B33/00 , G02B6/13 , G02B6/1345
摘要： A process for producing an optical waveguide comprising contacting at least one optically smooth surface of a single crystal of K1-xRbxTiOMO4 wherein x is from 0 to 1 and M is P or As with a specified molten salt of at least one of Rb, Cs and Tl at a temperature of from about 200 DEG C to about 600 DEG C for a time sufficient to increase the surface index of refraction at least about 0.00025 with respect to the index of refraction of the starting crystal, and cooling the resulting crystal. The product made thereby and a waveguide device using the same are also disclosed.
摘要翻译：一种用于制造光波导的方法，包括使K1-xRbxTiOMO4的单晶的至少一个光学光滑表面接触，其中x为0至1，M为P或As，与Rb，Cs中至少一种的规定熔融盐和 Tl在约200℃至约600℃的温度下持续足以相对于起始晶体的折射率将表面折射率增加至少约0.00025，并冷却所得晶体。由此制成的产品和使用该产品的波导装置也被公开。

88. 发明申请

WO1987006630A1 CONGRUENTLY MELTING COMPLEX OXIDES 审中-公开
标题翻译：综合熔炼复合氧化物
公开(公告)号：WO1987006630A1
公开(公告)日：1987-11-05
申请号：PCT/US1987000977
申请日：1987-04-29
申请人： AMERICAN TELEPHONE & TELEGRAPH COMPANY
发明人： AMERICAN TELEPHONE & TELEGRAPH COMPANY , ABRAHAMS, Sidney, Cyril , BRANDLE, Charles, David, Jr. , FRATELLO, Vincent, Jerome , VALENTINO, Alejandro, Jaucian
IPC分类号： C30B15/00
CPC分类号： C30B29/22 , C30B15/00 , C30B29/28 , H01S3/16
摘要： Device comprising a material including a complex oxide of a congruent composition and involves the finding that the congruent composition of any complex oxide is non-stoichiometric. The congruent composition differs from stoichiometry by at least 0.1 atomic percent for at least one constituent element.
摘要翻译：装置包括包含一致组合物的复合氧化物的材料，并且涉及任何复合氧化物的全等组成是非化学计量的发现。对于至少一种构成元素，全同组合物与化学计量不同至少为0.1原子％。

89. 发明申请

WO2018182267A1 초격자 구조를 가지는 유전체 소재, 전자 소자 및 전자 소자의 제조 방법 审中-公开
公开(公告)号：WO2018182267A1
公开(公告)日：2018-10-04
申请号：PCT/KR2018/003570
申请日：2018-03-27
申请人： 울산과학기술원 , 광주과학기술원
发明人： 이준희 , 이현재 , 강민수 , 박영진 , 민중근 , 함문호
IPC分类号： H01B3/10 , H01B5/14 , C30B29/22 , C30B29/68 , H01B13/00
CPC分类号： C30B29/22 , C30B29/68 , H01B3/10 , H01B5/14 , H01B13/00
摘要： 본 발명의 일 실시예는, 서로 다른 유전 상수를 가지는 3개 이상의 강유전성 물질을 원자 단위로 적층시킨 단위 유전층을 반복 적층시킨, 초격자 구조를 가지는 유전체 소재를 제공한다. 본 발명의 다른 실시예는 기판 및 상기 기판 상에 배치되고, 서로 다른 유전 상수를 가지는 3개 이상의 강유전성 물질을 원자 단위로 적층시킨 단위 유전층을 반복 적층시킨 유전층을 포함하는 전자 소자를 제공한다. 본 발명의 다른 실시예는 상기 전자 소자를 제조하는 방법을 제공한다.

90. 发明申请

WO2016190439A1 結晶材料、結晶製造法、放射線検出器、非破壊検査装置、および撮像装置审中-公开
标题翻译：晶体材料，晶体生产方法，辐射检测器，非破坏性检查装置和成像装置
公开(公告)号：WO2016190439A1
公开(公告)日：2016-12-01
申请号：PCT/JP2016/065837
申请日：2016-05-27
申请人：国立大学法人東北大学 , 株式会社C&A
发明人：黒澤　俊介 , 吉川　彰 , 鎌田　圭 , 横田　有為 , 大橋　雄二 , 堀合　毅彦 , 庄子　育宏 , 村上　力輝斗
IPC分类号： C30B29/22 , C09K11/00 , C09K11/79 , G01T1/161 , G01T1/20 , G01T1/202 , H01L31/0232
CPC分类号： C09K11/7774 , C01F17/0043 , C09K11/00 , C30B15/00 , C30B29/22 , G01T1/161 , G01T1/20 , G01T1/2006 , G01T1/202 , G01T1/2023 , H01L27/14663 , H01L31/0232
摘要：一般式（１）：（ＲＥ x Ａ１－x－y―ｓＢｙＭ' ｓ）２+α （Ｓｉ１－ｔ ,Ｍ" ｔ）２+β Ｏ７+γ で表され、パイロクロア型構造を持ち、非化学量論的組成、調和溶融組成である結晶材料。ＡはＧｄ、Ｙ、Ｌａ、Ｓｃ、Ｙｂ及びＬｕから選択される少なくとも１種以上を含み、ＢはＬａ、Ｇｄ、Ｙｂ、Ｌｕ、Ｙ及びＳｃから選択される少なくとも１種以上を含み、０.１＜ｙ＜０．４であり、ＲＥはＣｅ、Ｐｒ、Ｎｄ、Ｅｕ、Ｔｂ、Ｙｂから選択される少なくとも１種以上を含み、０＜ｘ＜０．１であり、Ｍ'およびＭ"はＬｉ，Ｎａ，Ｋ，Ｍｇ，Ｃａ，Ｓｒ，Ｂａ，Ｔｉ，Ｚｒ，Ｈｆ，Ｆｅ、Ｔａ，Ｗから選択される少なくとも１種以上を含み、０≦ｓ＜０．０１且つ０≦ｔ＜０．０１であり、０＜|α|＜０．３且つ０≦|β|＜０．３且つ０≦|γ|＜０．５で表される。
摘要翻译：具有由通式（1）表示的烧绿石结构，非化学计量组成和全同熔融组成的晶体材料：RExA1-xy-sByM's）2 +α（Si1-t，M“t）2 +βO7+γ，其中 A包括选自Gd，Y，La，Sc，Yb和Lu中的至少一种; B包括选自La，Gd，Yb，Lu，Y和Sc中的至少一种; 0.1

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