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71. 发明申请

WO2012000663A1 METHOD AND APPARATUS FOR CALIBRATING A WAFER TRANSPORT ROBOT 审中-公开
标题翻译：用于校准波浪运输机器人的方法和装置
公开(公告)号：WO2012000663A1
公开(公告)日：2012-01-05
申请号：PCT/EP2011/003202
申请日：2011-06-29
申请人： CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG , KNÖPFLE, Daniel , HARTMANN, Andreas , GRAF, Ottmar
发明人： KNÖPFLE, Daniel , HARTMANN, Andreas , GRAF, Ottmar
IPC分类号： H01L21/68
CPC分类号： H01L21/681 , B25J9/1692 , G05B2219/39024 , G05B2219/39047
摘要： The application describes a method for calibrating a wafer transport robot as well as a method and an apparatus for loading/unloading a wafer boat, the wafer boat having a plurality of plates, which are arranged generally parallel to each other in an opposed manner and a plurality of receptacles for receiving the wafers between adjacent plates. The wafer transport robot comprises a wafer gripper which is adapted to insert a wafer into the receptacles between the plates and to remove the wafer therefrom. In one method, the wafer gripper is moved to at least one position, which corresponds approximately to a theoretical loading position, and the spatial position of the wafer gripper is automatically determined in this position. Based on a difference between the determined spatial position of the wafer gripper and the theoretical loading position, at least one correction or compensation parameter for positioning the wafer gripper is determined. In an alternative process, a predetermined point of the wafer gripper, e.g. the center point thereof, is moved to different positions within a theoretical loading zone for a wafer boat by use of a robot coordinate system, and a corresponding spatial position of the wafer gripper is determined in these positions. The corresponding coordinate data of the robot coordinate system are stored in relation to the corresponding determined spatial position of the wafer gripper. For loading/unloading a wafer boat, the wafer boat is measured by use of the same measuring system which was used for determining the spatial position of the wafer gripper for a calibration. The measuring system comprises at least three sensors which are movable along predetermined movement paths, and which are able to measure a distance between the sensor and an edge region of an element entering the measuring range of the sensor along a measuring direction.
摘要翻译：本申请描述了一种用于校准晶片输送机器人的方法以及用于装载/卸载晶片舟皿的方法和装置，所述晶片舟皿具有多个板，所述多个板以相对的方式彼此大致平行地排列，并且用于在相邻板之间接收晶片的多个插座。晶片传送机器人包括晶片夹持器，其适于将晶片插入板之间的插座中并从其移除晶片。在一种方法中，晶片夹持器被移动到至少一个位置，其大致对应于理论装载位置，并且在该位置自动确定晶片夹持器的空间位置。基于确定的晶片夹持器的空间位置和理论装载位置之间的差异，确定用于定位晶片夹持器的至少一个校正或补偿参数。在替代方法中，晶片夹持器的预定点，例如，其中心点通过使用机器人坐标系移动到用于晶片舟皿的理论加载区域内的不同位置，并且在这些位置确定晶片夹持器的对应的空间位置。相对于晶片夹持器的相应确定的空间位置存储机器人坐标系的相应坐标数据。对于装载/卸载晶片舟皿，通过使用相同的测量系统测量晶片舟皿，该测量系统用于确定用于校准的晶片夹具的空间位置。测量系统包括至少三个传感器，其可沿着预定的运动路径移动，并且能够沿测量方向测量传感器与进入传感器的测量范围的元件的边缘区域之间的距离。

72. 发明申请

WO2011157381A1 PROCESS AND APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON INGOTS 审中-公开
标题翻译：制造多晶硅硅素体的工艺和装置
公开(公告)号：WO2011157381A1
公开(公告)日：2011-12-22
申请号：PCT/EP2011/002857
申请日：2011-06-10
申请人： CENTROTHERM SITEC GMBH , HUSSY, Stephan , PROKOPENKO, Oleksandr , KLOOS, Ralf , HOESS, Christian
发明人： HUSSY, Stephan , PROKOPENKO, Oleksandr , KLOOS, Ralf , HOESS, Christian
IPC分类号： C30B11/00 , F27D99/00
CPC分类号： C01B33/021 , C30B11/003 , C30B29/06 , F27B14/04 , F27B14/06 , F27B14/20 , F27D99/0006
摘要： The present application describes a process and apparatus for producing polycrystalline silicon ingots. During the process, a crucible is arranged in a process chamber, wherein the crucible is filled with solid silicon material or is being filled with silicon material in the process chamber. The crucible is located with respect to at least one diagonal heater in such a way that the diagonal heater is located laterally offset to and generally above the silicon ingot to be produced. Thereafter, the solid silicon material in the crucible is heated above the melting temperature of the silicon material in order to form molten silicon in the crucible, and thereafter, the silicon material in the crucible is cooled down below the solidification temperature of the molten silicon, therein a temperature profile in the silicon material during the cooling phase is controlled at least partially via the at least one diagonal heater. The apparatus comprises a process chamber, a crucible holder inside the process chamber, and at least one diagonal heater in the process chamber. The diagonal heater is located laterally with respect to the crucible holder and extends generally perpendicular thereto and is spaced from the crucible holder in a vertical direction at such a distance that the diagonal heater is located generally above a polycrystalline silicon ingot to be formed in the crucible. The diagonal heater is stationary with respect to the crucible holder when the process chamber is closed.
摘要翻译：本申请描述了用于生产多晶硅锭的方法和装置。在该过程中，将坩埚布置在处理室中，其中坩埚中填充有固体硅材料，或者在处理室中填充硅材料。坩埚相对于至少一个对角加热器定位成使得对角加热器位于横向偏移并且大体上位于待生产的硅锭的上方。此后，将坩埚中的固体硅材料加热到高于硅材料的熔融温度，以便在坩埚中形成熔融硅，此后将坩埚中的硅材料冷却至低于熔融硅的凝固温度，其中在冷却阶段期间，硅材料中的温度分布至少部分地通过至少一个对角加热器被控制。该设备包括处理室，处理室内的坩埚保持器和处理室中的至少一个对角加热器。对角加热器相对于坩埚保持器横向定位并且大致垂直于其延伸并且在垂直方向上与坩埚保持器间隔开，使得对角加热器通常位于要形成在坩埚中的多晶硅锭的上方。当处理室关闭时，对角加热器相对于坩埚保持器是静止的。

73. 发明申请

WO2011144324A1 APPARATUS AND METHOD FOR SUPPLYING ELECTRIC POWER TO A CVD - REACTOR 审中-公开
标题翻译：将电力供应给CVD反应器的装置和方法
公开(公告)号：WO2011144324A1
公开(公告)日：2011-11-24
申请号：PCT/EP2011/002449
申请日：2011-05-17
申请人： CENTROTHERM SITEC GMBH , VOLLMAR, Wilfried
发明人： VOLLMAR, Wilfried
IPC分类号： C23C16/44 , C01B33/035
CPC分类号： C23C16/24 , C01B33/035 , C23C16/4418
摘要： An apparatus and a method for applying a voltage across a plurality of silicon rods (51-54) in a CVD reactor and a CVD reactor are described. The apparatus has a series connection in which the silicon rods may be inserted as resistors, at least one first power supply unit (12), at least one second power supply unit (14), at least one third power supply unit (16), and at least one control unit which is capable of applying a voltage across the silicon rods in the series connection via the first, the second or the third power supply unit. The first power supply unit has a plurality of first transformers (21-24), the outputs of which are each connected with one silicon rod in the series connection and wherein the first transformers have a first open circuit voltage and a first short circuit current. The second power supply unit has a plurality of second transformers (31-32), the outputs of which are connected to the same number of silicon rods as the first transformers in the series connection, in parallel to one or more of the first transformers and wherein the second transformers have a second open circuit voltage and a second short circuit current, wherein the second open circuit voltage is lower than the first open circuit voltage and the second short circuit current is higher than the first short circuit current. The third power supply unit has outputs which are connected with the silicon rods in the series connection in parallel to the first and second transformers and wherein the third power supply unit is capable of providing a current in a voltage range which is below the open circuit voltage of the second transformer, which current is higher than the short circuit current of the second transformer.
摘要翻译：描述了在CVD反应器和CVD反应器中跨多个硅棒（51-54）施加电压的装置和方法。该装置具有串联连接，其中硅棒可以作为电阻器插入，至少一个第一电源单元（12），至少一个第二电源单元（14），至少一个第三电源单元（16），以及至少一个控制单元，其能够经由第一，第二或第三电源单元在串联中的硅棒上施加电压。第一电源单元具有多个第一变压器（21-24），其输出端分别与串联连接中的一个硅棒连接，并且其中第一变压器具有第一开路电压和第一短路电流。第二电源单元具有多个第二变压器（31-32），它们的输出端连接到与串联连接中的第一变压器相同数量的硅棒，并联到一个或多个第一变压器和其中所述第二变压器具有第二开路电压和第二短路电流，其中所述第二开路电压低于所述第一开路电压，并且所述第二短路电流高于所述第一短路电流。第三电源单元具有与第一和第二变压器并联的与串联的硅棒连接的输出，并且其中第三电源单元能够提供低于开路电压的电压范围内的电流的第二变压器，该电流高于第二变压器的短路电流。

74. 发明申请

WO2011110369A1 APPARATUS FOR THERMALLY TREATING SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：用于热处理半导体衬底的装置
公开(公告)号：WO2011110369A1
公开(公告)日：2011-09-15
申请号：PCT/EP2011/001256
申请日：2011-03-14
申请人： CENTROTHERM THERMAL SOLUTIONS GMBH & CO. KG , KEIM, Uwe , VÖLK, Peter
发明人： KEIM, Uwe , VÖLK, Peter
IPC分类号： H01L21/00
CPC分类号： H01L21/67109
摘要： An apparatus for thermally treating substrates, in particular semiconductor substrates is described. The apparatus comprises a processing tube for receiving a plurality of semiconductor substrates and a resistance heating element radially encompassing the processing tube. The resistance heating element is made of a material which is free of metal. By providing a material which is free of metal for the resistance heating element, the danger of diffusion of metals into the processing space within the processing tube may be obviated.
摘要翻译：描述了一种用于热处理衬底，特别是半导体衬底的设备。该装置包括用于接收多个半导体衬底的处理管和径向包围处理管的电阻加热元件。电阻加热元件由不含金属的材料制成。通过为电阻加热元件提供不含金属的材料，可以避免金属扩散到处理管内的处理空间中的危险。

75. 发明申请

WO2011076430A2 VERFAHREN UND VORRICHTUNG ZUM AUSBILDEN EINER DIELEKTRISCHEN SCHICHT AUF EINEM SUBSTRAT 审中-公开
标题翻译：方法和装置用于在衬底上形成电介质层
公开(公告)号：WO2011076430A2
公开(公告)日：2011-06-30
申请号：PCT/EP2010/007927
申请日：2010-12-23
申请人： BECKMANN, Wilhelm
发明人： BECKMANN, Wilhelm
IPC分类号： H01L21/316 , H01J37/00
CPC分类号： H01L21/31654 , C23C16/50 , C23C16/509 , H01J37/32192 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/67115 , H01L21/677
摘要： Es wird ein Verfahren und eine Vorrichtung zum Ausbilden einer dielelektrischen Schicht auf einem Substrat beschrieben, bei dem ein Plasma aus einem Prozessgas zwischen einer Plasmaelektrode und dem Substrat erzeugt wird, wodurch sich eine wenigstens teilweise chemische Reaktion von Substrat und Prozessgas und/oder eine wenigstens teilweise Abscheidung von Prozessgaskomponenten zur Bildung der dielektrischen Schicht auf dem Substrat ergibt. Dabei bezeichnet der Begriff Plasmaelektrode eine Einheit aus zwei Elektroden, vorzugsweise mit einem festgelegten Abstand zwischen den Elektroden. Bei dem Verfahren wird der Abstand zwischen der Plasmaelektrode und dem Substrat während der chemischen Reaktion und/oder der Abscheidung der Prozessgaskomponenten verändert. Eine Vorrichtung zur Durchführung dieses Verfahrens ist ebenfalls beschrieben.
摘要翻译：它将基板用于形成在从等离子体电极与所述衬底之间的处理气体所产生的等离子体的dielelektrischen层，从而在基底和工艺气体的至少部分的化学反应和/或至少部分的方法和装置来描述工艺气体成分的沉积用于形成在衬底的结果在电介质层。这里，术语等离子体指的是两个电极的电极单元中，优选与电极之间的固定距离。在该方法中，等离子体电极与所述的工艺气体成分的化学反应和/或沉积期间的衬底之间的距离被改变。用于执行该方法的装置也被公开。

76. 发明申请

WO2011054405A2 METHOD AND APPARATUS FOR TREATING SUBSTRATES 审中-公开
标题翻译：用于处理基板的方法和装置
公开(公告)号：WO2011054405A2
公开(公告)日：2011-05-12
申请号：PCT/EP2010/001629
申请日：2010-03-15
申请人： HAMATECH APE GMBH & CO. KG , DIETZE, Uwe , DRESS, Peter , SING, Sherjang
发明人： DIETZE, Uwe , DRESS, Peter , SING, Sherjang
IPC分类号： B08B7/00
CPC分类号： B08B3/10 , B08B7/0035 , B08B7/0057 , G03F1/82 , H01L21/67051
摘要： The application describes several methods and an apparatus for treatment of at least partial areas of a substrate. In said methods, at least one liquid is applied to at least one partial area of the substrate and electromagnetic radiation is introduced into this liquid, in order to achieve a desired effect in accordance with the respective method. In one method, radicals are generated in the liquid by means of UV radiation prior to application of the liquid, wherein generation of the radicals occurs directly before applying the liquid to the substrate, such that at least a portion of the radicals reaches the substrate. In one method, in which ions are removed from at least partial areas of the surface of a substrate and near surface layers of said substrate, a liquid, which is heated above ambient temperature is applied to the substrate, in order to form a liquid film on at least a partial area of said substrate, wherein electromagnetic radiation is introduced into said liquid film such that at least a portion of the radiation reaches the substrate surface. In another method for changing the surface characteristics of a substrate having an at least partially hydrophobic substrate surface such that at least a portion of said hydrophobic surface gets a hydrophilic surface characteristic, a liquid is applied to at least the partial area of the surface of the substrate, whose surface characteristic is to be changed, and UV radiation of a predetermined range of wavelength is guided through said liquid onto at least the partial area of the surface of said substrate, whose surface characteristic is to be changed. The methods may be performed in a common apparatus in any desired order in series and/or in parallel.
摘要翻译：本申请描述了用于处理基底的至少部分区域的几种方法和装置。在所述方法中，至少一种液体被施加到基底的至少一个部分区域，并且电磁辐射被引入到该液体中，以便根据各自的方法获得期望的效果。在一种方法中，在施加液体之前通过UV辐射在液体中产生自由基，其中在将液体施加到基底之前直接发生自由基，使得至少一部分自由基到达基底。在一种方法中，从衬底的表面的至少部分区域和所述衬底的表面层的至少部分区域去除离子，将加热到环境温度以上的液体施加到衬底上，以形成液膜在所述衬底的至少部分区域上，其中电磁辐射被引入所述液膜中，使得至少一部分辐射到达衬底表面。在用于改变具有至少部分疏水的基底表面的基底的表面特性的另一种方法中，使得所述疏水表面的至少一部分具有亲水表面特性，将液体施加到至少部分疏水性基底表面的部分区域基板，其表面特性将被改变，并且预定波长范围的UV辐射被引导到所述液体至少要改变其表面特性的所述基板的表面的部分区域上。这些方法可以以任何期望的顺序串联和/或并行地在公共装置中执行。

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