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71. 发明申请

WO2009029246A1 REDUCED RESIDUAL FORMATION IN ETCHED MULTI-LAYER STACKS 审中-公开
标题翻译：在多层堆叠中减少残留形成
公开(公告)号：WO2009029246A1
公开(公告)日：2009-03-05
申请号：PCT/US2008/010063
申请日：2008-08-25
申请人： MOLECULAR IMPRINTS, INC.
发明人： XU, Frank, Y. , LIU, Weijun , BROOKS, Cynthia, B. , LABRAKE, Dwayne, L. , LENTZ, David., J.
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F7/027 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24612
摘要： A multi-layer stack for imprint lithography is formed by applying a first polymerizable composition to a substrate, polymerizing the first polymerizable composition to form a first polymerized layer, applying a second polymerizable composition to the first polymerized layer, and polymerizing the second polymerizable composition to form a second polymerized layer on the first polymerized layer. The first polymerizable composition includes a polymerizable component with a glass transition temperature less than about 25°C, and the first polymerized layer is substantially impermeable to the second polymerizable composition.
摘要翻译：通过将第一可聚合组合物施加到基底上，聚合第一可聚合组合物以形成第一聚合层，向第一聚合层施加第二可聚合组合物，并将第二可聚合组合物聚合成在第一聚合层上形成第二聚合层。第一可聚合组合物包括玻璃化转变温度低于约25℃的可聚合组分，并且第一聚合层对于第二可聚合组合物基本上是不可渗透的。

72. 发明申请

WO2007124007A3 METHOD FOR DETECTING A PARTICLE IN A NANOIMPRINT LITHOGRAPHY SYSTEM 审中-公开
标题翻译：用于检测纳米压印系统中的颗粒的方法
公开(公告)号：WO2007124007A3
公开(公告)日：2009-01-15
申请号：PCT/US2007009589
申请日：2007-04-19
申请人： MOLECULAR IMPRINTS INC
发明人： SCHUMAKER PHILIP D
IPC分类号： B29C45/76
CPC分类号： B29C43/021 , B29C43/003 , B29C43/58 , B29C2043/025 , B29C2043/5808 , B29C2043/5825 , B29C2043/5891 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A method for detecting a particle between a nanoimprint mold assembly and a substrate in a nanoimprint lithography system.
摘要翻译：一种用于在纳米压印光刻系统中检测纳米压印模具组件和衬底之间的颗粒的方法。

73. 发明申请

WO2008156750A1 SOLVENT-ASSISTED LAYER FORMATION FOR IMPRINT LITHOGRAPHY 审中-公开
标题翻译：溶剂辅助层形成用于印刷层析
公开(公告)号：WO2008156750A1
公开(公告)日：2008-12-24
申请号：PCT/US2008/007525
申请日：2008-06-17
申请人： MOLECULAR IMPRINTS, INC.
发明人： LIU, Weijun , XU, Frank, Y. , FLECTHER, Edward B.
IPC分类号： G03F1/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A solid layer is formed by applying a multiplicity of discrete portions of a fluid composition onto a surface of an imprint lithography substrate, and allowing the discrete portions of the composition to spontaneously spread on the surface of the substrate to form a substantially continuous layer. The composition includes a solvent and a solid or a solvent and a polymerizable material. The composition can be a solution or a dispersion. At least some of the solvent is evaporated from the composition, and a solid layer is formed (e.g., polymerized or dried) on the substrate. The solid layer is substantially free of interstitial voids.
摘要翻译：通过将多个离散部分的流体组合物施加到压印光刻基板的表面上并使组合物的离散部分自发地扩散在基板的表面上以形成基本上连续的层而形成固体层。该组合物包括溶剂和固体或溶剂以及可聚合材料。组合物可以是溶液或分散体。从组合物中蒸发出至少一些溶剂，并在基材上形成固体层（例如聚合或干燥）。固体层基本上不含间隙。

74. 发明申请

WO2007123819A3 METHOD FOR MAKING LENS FEATURES 审中-公开
标题翻译：制作镜头特点的方法
公开(公告)号：WO2007123819A3
公开(公告)日：2008-10-16
申请号：PCT/US2007008433
申请日：2007-04-03
申请人： MOLECULAR IMPRINTS INC
发明人： SCHMID GERARD , STACEY NICHOLAS A , RESNICK DOUGLAS J , VOISIN RONALD D , MYRON LAWRENCE J
IPC分类号： C03C15/00 , H01L21/302
CPC分类号： G03F7/0005 , B82Y10/00 , B82Y40/00 , G02B3/0012 , G03F7/0002
摘要： A process describes a combined use of anisotropic dry etching and isotropic wet etching to produce features. The mask protecting material (301) to be etched is exposed through lithography. An anisotropic dry etch is used to generate a trench through the hole (303). The depth of this etch will increase the overall lenslet aspect ratio which is generated in the next, wet etch.
摘要翻译：一个过程描述了各向异性干蚀刻和各向同性湿蚀刻的组合使用以产生特征。要蚀刻的掩模保护材料（301）通过光刻曝光。使用各向异性干蚀刻来通过孔（303）产生沟槽。该蚀刻的深度将增加在下一次湿式蚀刻中产生的整体小透镜纵横比。

75. 发明申请

WO2005114719A3 METHOD OF FORMING A RECESSED STRUCTURE EMPLOYING A REVERSE TONE PROCESS 审中-公开
标题翻译：形成具有反向色调过程的受阻结构的方法
公开(公告)号：WO2005114719A3
公开(公告)日：2008-10-09
申请号：PCT/US2005017756
申请日：2005-05-19
申请人： MOLECULAR IMPRINTS INC
发明人： SREENIVASAN SIDLGATA V
IPC分类号： C23F1/00 , H01L21/461 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/0337 , H01L21/3086 , H01L21/76816 , H01L21/76817
摘要： The present invention provides a method of forming recesses on a substrate, the method including forming on the substrate a patterning layer having first features; trim etching the first features to define trimmed features having a shape; and transferring an inverse of the shape into the substrate.
摘要翻译：本发明提供了在基板上形成凹部的方法，该方法包括在基板上形成具有第一特征的图案化层; 修剪蚀刻第一特征以限定具有形状的修剪特征; 并将形状的倒数转移到衬底中。

76. 发明申请

WO2007126767A3 CHUCKING SYSTEM COMPRISING AN ARRAY OF FLUID CHAMBERS 审中-公开
标题翻译：包括流体排气管的排气系统
公开(公告)号：WO2007126767A3
公开(公告)日：2008-07-31
申请号：PCT/US2007007487
申请日：2007-03-26
申请人： MOLECULAR IMPRINTS INC
发明人： CHERALA ANSHUMAN , CHOI BYUNG-JIN , LAD PANKAJ B , SHACKLETON STEVEN C
IPC分类号： B29C59/00
CPC分类号： H01L21/6838 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L21/6715
摘要： The present invention is directed towards a chucking system to hold a substrate (12), said system including, inter alia, a chuck body (60) having first and second opposed sides, said first side including an array of fluid chambers (68a, 68b, 68c) arranged in rows and columns, said fluid chambers (68a, 68b, 68c) each comprising first and second spaced-apart recesses (70, 72) defining first and second spaced-apart support regions, with said first support region cincturing said second support region and said first and second recesses (70, 72), and said second support region cincturing said second recess (72), with said substrate (12) resting against said first and second support regions, with said first recess (70) and a portion of said substrate (12) in superimposition therewith defining a first chamber and said second recess (72) and a portion of said substrate in superimposition therewith defining a second chamber, with each column of said first chambers and each row of said second chambers being in fluid communication with a differing source of fluid to control a flow of fluid in said array of fluid chambers (68).
摘要翻译：本发明涉及一种用于夹持基板（12）的夹紧系统，所述系统尤其包括具有第一和第二相对侧面的卡盘体（60），所述第一侧包括流体室阵列（68a，68b ，68c），每个包括限定第一和第二间隔开的支撑区域的第一和第二间隔开的凹部（70,72）的所述流体室（68a，68b，68c），所述第一支撑区域使所述第二支撑区域和所述第一和第二凹部（70,72）以及所述第二支撑区域，使所述第二凹部（72）与所述第一凹部（70）保持抵靠所述第一和第二支撑区域，并且所述衬底（12）的一部分叠加形成第一腔室和所述第二凹部（72），并且所述衬底的一部分叠加形成第二腔室，所述第一腔室的每列和所述第二腔室的每一列茶木材与不同的流体源流体连通以控制所述流体室阵列（68）中的流体流动。

77. 发明申请

WO2008060322A2 NANO-FABRICATION METHOD AND SYSTEM 审中-公开
标题翻译：纳米制造方法和系统
公开(公告)号：WO2008060322A2
公开(公告)日：2008-05-22
申请号：PCT/US2007/008078
申请日：2007-04-02
申请人： MOLECULAR IMPRINTS, INC.
发明人： SHACKLETON, Steven, C. , LAD, Pankaj B. , MCMACKIN, Ian M. , XU, Frank Y. , SREENIVASAN, Sidlgata V.
IPC分类号： B29C35/08 , B29C43/02
CPC分类号： G03F7/0002 , B29C43/003 , B29C43/021 , B29C43/34 , B29C2043/025 , B29C2043/142 , B29C2043/3438 , B29K2105/0002 , B82Y10/00 , B82Y40/00
摘要： A method/process for curing imprint on a template prior to contact with a substrate. A curing process is used to adhere the imprint to a wafer or substrate. Monomer is deposited on a template and then partially cured using a UV exposure. The exposure is controlled so that the imprint is cured past the gel point, but still retains a thin liquid layer of uncured monomer at the surface that will bond with the wafer. Further, this partially cured layer enables the alignment adjustments between the template and the substrate to be performed after contact between the two without pulling any monomer out of the features.
摘要翻译：用于在与基材接触之前在模板上固化压印的方法/工艺。使用固化工艺将印记粘附到晶片或基底。单体沉积在模板上，然后使用UV暴露部分固化。控制曝光使印记固化超过凝胶点，但仍然在与晶片结合的表面处保留未固化单体的薄液层。此外，该部分固化的层能够在模板和基板之间的接触调整之后在两者接触之后进行对准调整，而无需将任何单体拉出特征。

78. 发明申请

WO2007123806A3 IMPRINT LITHOGRAPHY SYSTEM 审中-公开
标题翻译： IMPRINT LITHOGRAPHY系统
公开(公告)号：WO2007123806A3
公开(公告)日：2007-12-27
申请号：PCT/US2007008076
申请日：2007-04-02
申请人： MOLECULAR IMPRINTS INC
发明人： NIMMAKAYALA PAWAN K , CHOI BYUNG-JIN , RAFFERTY TOM H , SCHUMAKER PHILIP D
IPC分类号： B05D5/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , G03F9/00 , G03F9/7042 , G03F9/7088
摘要： A imprint lithography system operable for imprinting a pattern into a material deposited between an imprint mold and a substrate, the system including, inter alia, a first set of imaging units positioned at a first angle relative to normal of the substrate; and a second set of imaging units positioned at a second angle relative to normal of the substrate, wherein the first and second angles are not equal to each other.
摘要翻译：压印光刻系统，其可操作用于将图案压印到沉积在压印模具和衬底之间的材料中，所述系统尤其包括相对于衬底法线以第一角度定位的第一组成像单元; 以及第二组成像单元，其相对于基板的法线定位成第二角度，其中第一和第二角度彼此不相等。

79. 发明申请

WO2007123805A2 LITHOGRAPHY IMPRINTING SYSTEM 审中-公开
标题翻译：光刻印刷系统
公开(公告)号：WO2007123805A2
公开(公告)日：2007-11-01
申请号：PCT/US2007008075
申请日：2007-04-02
申请人： MOLECULAR IMPRINTS INC
发明人： CHERALA ANSHUMAN , LAD PANKAJ B , MCMACKIN IAN M , CHOI BYUNG-JIN
IPC分类号： B29C47/76
CPC分类号： G03F7/0002 , B29C43/003 , B29C43/021 , B29C2043/025 , B29C2043/5833 , B82Y10/00 , B82Y40/00
摘要： The present invention is directed towards a method and a system to create and maintain a desired environment in the vicinity of a nano-imprint lithography template by creation of a partial vacuum using channels or holes in the template holding the nano-imprint mold.
摘要翻译：本发明针对一种方法和系统，其通过使用保持纳米压印模具的模板中的通道或孔洞创建局部真空来在纳米压印光刻模板附近创建和保持期望的环境。

80. 发明申请

WO2007120537A3 PATTERNING A PLURALITY OF FIELDS ON A SUBSTRATE 审中-公开
公开(公告)号：WO2007120537A3
公开(公告)日：2007-10-25
申请号：PCT/US2007/008198
申请日：2007-03-29
申请人： MOLECULAR IMPRINTS, INC.
发明人： SREENIVASAN, Sidlgata V. , SCHUMAKER, Philip D.
IPC分类号： H01L21/00 , H01L21/84
摘要： A method of patterning a substrate comprising a plurality of fields, including, inter alia, positioning a first volume of fluid on a first subset of the plurality of fields of the substrate, with the first volume of fluid being subjected to a first evaporation time; positioning a second volume of fluid on a second subset of the plurality of fields of the substrate, differing from the first subset, with the second volume of fluid being subjected to a second evaporation time, differing from the first evaporation time; and patterning the first and second subsets of the plurality of fields, with the first subset of the plurality of fields being patterned prior to the second subset of the plurality of fields being patterned, with a volume associated with the second subset of the plurality of fields being greater than a volume associated with the first subset of the plurality of fields to compensate for the second evaporation time being greater than the first evaporation time.

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