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    • 4. 发明申请
    • IMPRINT ALIGNMENT METHOD, SYSTEM, AND TEMPLATE
    • 绘制对齐方法,系统和模板
    • WO2006020194A3
    • 2009-04-09
    • PCT/US2005025390
    • 2005-07-18
    • MOLECULAR IMPRINTS INC
    • VOISIN RONALD D
    • B05D5/12
    • G03F7/7035G03F7/70633Y10S977/887
    • An improved lithographic alignment method, system, and template. The method includes creating, within a lithographic subfield, subsequent-layer features which are intentionally offset from their respective previous-layer features, where the intentional offset may vary in magnitude and direction from one subfield to the next. The system includes an imprint lithographic machine and first and second lithography templates where the templates are adapted to enable the machine to form first and second features, respectively, and where a second feature is configured to be deliberately offset from a corresponding first feature. The template set includes at least two templates, one having features which are deliberately offset from corresponding features of another template. Also, a method of manufacturing such a template set.
    • 改进的光刻对准方法,系统和模板。 该方法包括在光刻子场内创建有意从其各自的先前层特征偏移的后续层特征,其中有意偏移可以在一个子场到下一个子场的幅度和方向上变化。 该系统包括压印光刻机和第一和第二光刻模板,其中模板适于使机器能够分别形成第一和第二特征,并且其中第二特征被配置为故意偏离对应的第一特征。 模板集包括至少两个模板,一个具有故意偏离另一个模板的相应特征的特征。 另外,制造这样的模板集的方法。