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    • 67. 发明申请
    • SPINEL SUBSTRATE AND HETEROEPITAXIAL GROWTH OF III-V MATERIALS THEREON
    • 其中III-V材料的螺旋体基体和异相生长
    • WO2003084886A1
    • 2003-10-16
    • PCT/US2003/010147
    • 2003-03-31
    • SAINT-GOBAIN CERAMICS & PLASTICS, INC.KOKTA, Milan, R.ONG, Hung T.
    • KOKTA, Milan, R.ONG, Hung T.
    • C03B15/00
    • C30B15/00C30B29/26Y10T428/12076Y10T428/12528Y10T428/12667
    • A spinel composition of the invention includes a monocrystalline lattice having a formula Mg 1-w α w A1 x-y β y O z , where w is greater than 0 and less than 1, x is greater than 2 and less than about 8, y is less than x, z is equal to or greater than 4 and equal to or less than about 13, α is a divalent cationic element having an ionic radius greater than divalent magnesium, and β is a trivalent cationic element having an ionic radius greater than trivalent aluminum. The monocrystalline lattice has tetrahedral positions and octahedral positions, and most of the magnesium and α occupy tetrahedral positions. In one embodiment, the molar ratio of aluminum to the amount of magnesium, α and β can be controlled during growth of the monocrystalline lattice thereby forming a spinel substrate suitable for heteroepitaxial growth of III-V materials. A method of the invention, includes forming a monocrystalline lattice of spinel composition. A composition includes the spinel composition layer and a III-V layer at the surface of the spinel layer. A method of forming a composite includes depositing the III-V layer onto the surface of the spinel composition using heteroepitaxial techniques.
    • 本发明的尖晶石组合物包括具有式Mg1-w&agr; wA1x-y&bgr; yOz的单晶晶格,其中w大于0且小于1,x大于2且小于约8,y小于x z等于或大于4且等于或小于约13,α是具有大于二价镁的离子半径的二价阳离子元素,β是具有大于三价铝的离子半径的三价阳离子元素。 单晶晶格具有四面体位置和八面体位置,大多数镁和α占据四面体位置。 在一个实施方案中,可以在单晶晶格生长期间控制铝与镁,α和β的量的摩尔比,从而形成适用于III-V材料的异质外延生长的尖晶石衬底。 本发明的方法包括形成尖晶石组合物的单晶晶格。 组合物包括尖晶石组合物层和在尖晶石层的表面处的III-V层。 形成复合材料的方法包括使用异质外延技术将III-V层沉积到尖晶石组合物的表面上。
    • 68. 发明申请
    • MAGNETIC TRANSPARENT CONDUCTING OXIDE FILM AND METHOD OF MAKING
    • 透明导电氧化磁性薄膜及其制造方法
    • WO02029449A2
    • 2002-04-11
    • PCT/US2001/031345
    • 2001-10-05
    • C01B13/32C03C17/245C03C17/25C23C14/08C23C14/34C23C18/12G02B1/10H01B1/08H01B5/14H01B13/00H01L31/0224
    • G02B5/208C03C17/245C03C17/25C03C17/256C03C2217/212C03C2217/217C03C2217/228C03C2217/23C03C2218/116C03C2218/156C23C18/1212C23C18/1216C23C18/1245C23C18/1676C23C18/31G02B1/10H01B1/08H01L31/022466Y10T428/12528Y10T428/12597Y10T428/1266Y10T428/12667Y10T428/12736
    • Cobalt-nickel oxide films of nominal 100 nm thickness, and resistivity as low as 0.06 OMEGA .cm have been deposited by spin-casting from both aqueous and organic precursor solutions followed by annealing at 450 DEG C in air. Films deposited on sapphire substrates exhibit a refractive index of about 1.7 and are relatively transparent in the wavelength region from 0.6 to 10.0 mu m. They are also magnetic. The electrical and spectroscopic properties of the oxides have been studied as a function of x = Co/(Co + Ni) ratio. An increase in film resistivity was found upon substitution of other cations (e.g., Zn , Al ) for Ni in the spinel structure. However, some improvement in the mechanical properties of the films resulted. On the other hand, addition of small amounts of Li decreased the resistivity. A combination of XRD, XPS, UV/Vis and Raman spectroscopy indicated that NiCo2O4 is the primary conducting component and that the conductivity reaches a maximum at this stoichiometry. When x 0.67, the oxide was all spinel but the increased Co content lowered the conductivity. The influence of cation charge state and site occupancy in the spinel structure markedly affects calculated electron band structures and contributes to a reduction of p-type conductivity, the formation of polarons, and the reduction in population of mobile charge carriers that tend to limit transmission in the infrared.
    • 标称厚度为100nm且电阻率高达0.06Ω·cm的钴 - 镍氧化物膜通过离心成型从水性和有机前体溶液中沉积,随后 在空气中450℃退火。 沉积在蓝宝石衬底上的膜具有约1.7的折射率,并且在0.6至10μm的波长区域中相对透明。 这些薄膜也是磁性的。 已经研究了氧化物的电学和光谱性质作为比率x = Co /(Co + Ni)的函数。 已发现膜电阻率的增加用其它阳离子例如尖晶石结构中的Zn 2+,Al 3+取代Ni。 然而,已经注意到膜的机械性能的一些改进。 另一方面,添加少量Li降低了电阻率。 组合由X射线,可见UV光谱和拉曼光谱的X射线光电子光谱法检查,发现该组件是NiCo2O4初级导体,和电导率最高与此化学计量。 当x <0.67时,形成NiO,导致电阻率增加。 对于x> 0.67,氧化物占据了所有尖晶石,但Co含量的增加降低了电导率。 尖晶石结构中阳离子电荷态和位点体积的影响显着影响计算的电子能带结构并有助于降低P型电导率,极化子的形成, 并减少倾向于限制红外传输的移动电荷矢量的数量。