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1. 发明申请

WO2003084886A1 SPINEL SUBSTRATE AND HETEROEPITAXIAL GROWTH OF III-V MATERIALS THEREON 审中-公开
标题翻译：其中III-V材料的螺旋体基体和异相生长
公开(公告)号：WO2003084886A1
公开(公告)日：2003-10-16
申请号：PCT/US2003/010147
申请日：2003-03-31
申请人： SAINT-GOBAIN CERAMICS & PLASTICS, INC. , KOKTA, Milan, R. , ONG, Hung T.
发明人： KOKTA, Milan, R. , ONG, Hung T.
IPC分类号： C03B15/00
CPC分类号： C30B15/00 , C30B29/26 , Y10T428/12076 , Y10T428/12528 , Y10T428/12667
摘要： A spinel composition of the invention includes a monocrystalline lattice having a formula Mg 1-w α w A1 x-y β y O z , where w is greater than 0 and less than 1, x is greater than 2 and less than about 8, y is less than x, z is equal to or greater than 4 and equal to or less than about 13, α is a divalent cationic element having an ionic radius greater than divalent magnesium, and β is a trivalent cationic element having an ionic radius greater than trivalent aluminum. The monocrystalline lattice has tetrahedral positions and octahedral positions, and most of the magnesium and α occupy tetrahedral positions. In one embodiment, the molar ratio of aluminum to the amount of magnesium, α and β can be controlled during growth of the monocrystalline lattice thereby forming a spinel substrate suitable for heteroepitaxial growth of III-V materials. A method of the invention, includes forming a monocrystalline lattice of spinel composition. A composition includes the spinel composition layer and a III-V layer at the surface of the spinel layer. A method of forming a composite includes depositing the III-V layer onto the surface of the spinel composition using heteroepitaxial techniques.
摘要翻译：本发明的尖晶石组合物包括具有式Mg1-w＆agr; wA1x-y＆bgr; yOz的单晶晶格，其中w大于0且小于1，x大于2且小于约8，y小于x z等于或大于4且等于或小于约13，α是具有大于二价镁的离子半径的二价阳离子元素，β是具有大于三价铝的离子半径的三价阳离子元素。单晶晶格具有四面体位置和八面体位置，大多数镁和α占据四面体位置。在一个实施方案中，可以在单晶晶格生长期间控制铝与镁，α和β的量的摩尔比，从而形成适用于III-V材料的异质外延生长的尖晶石衬底。本发明的方法包括形成尖晶石组合物的单晶晶格。组合物包括尖晶石组合物层和在尖晶石层的表面处的III-V层。形成复合材料的方法包括使用异质外延技术将III-V层沉积到尖晶石组合物的表面上。

2. 发明申请

WO2002095887A3 COBALT-DOPED SATURABLE ABSORBER Q-SWITCHES AND LASER SYSTEMS 审中-公开
公开(公告)号：WO2002095887A3
公开(公告)日：2002-11-28
申请号：PCT/US2002/010768
申请日：2002-04-04
申请人： SAINT-GOBAIN CERAMICS & PLASTICS, INC. , KOKTA, Milan, R. , PERESSINI, Dennis, L. , COOKE, Jeffrey, A. , GOODNIGHT, Kevin, L.
发明人： KOKTA, Milan, R. , PERESSINI, Dennis, L. , COOKE, Jeffrey, A. , GOODNIGHT, Kevin, L.
IPC分类号： H01S3/113
摘要： A saturable absorber Q-switch includes a monocrystalline lattice having the formula Mg 1-x Co x Al y O z where x is greater tha 0 and less than 1, y is greater than 2 and less than about 8, and z is between about 4 and 13. The lattice has tetrahedral and octehedral positions, and most of the magnesium and cobalt occupy tetrahedral positions. In one embodiment, the molar ratio of aluminium to the combined amount of magnesium and cobalt in the monocrystalline lattice can be controlled during growth of the monocrystalline lattice to thereby form a saturable absorber Q-switch that exhibits a 4 T 1 spectrum for the cobalt ion of at least about 1544 µm. In another embodiment, a laser system, such as an Er:glass laser system, includes a saturable absorber-Q-switch that includes a monocrystalline lattice wherein the molar ratio of aluminium to the combined amounts of magnesium and cobalt exceeds 2:1, and preferably is about 6:1, and wherein essentially all of the magnesium and cobalt components of the monocrystalline occupy tetrahedral positions of the lattice.

3. 发明申请

WO2002095887A2 COBALT-DOPED SATURABLE ABSORBER Q-SWITCHES AND LASER SYSTEMS 审中-公开
标题翻译： COBALT-DOPED可饱和吸收器Q开关和激光系统
公开(公告)号：WO2002095887A2
公开(公告)日：2002-11-28
申请号：PCT/US2002/010768
申请日：2002-04-04
申请人： SAINT-GOBAIN CERAMICS & PLASTICS, INC. , KOKTA, Milan, R. , PERESSINI, Dennis, L. , COOKE, Jeffrey, A. , GOODNIGHT, Kevin, L.
发明人： KOKTA, Milan, R. , PERESSINI, Dennis, L. , COOKE, Jeffrey, A. , GOODNIGHT, Kevin, L.
IPC分类号： H01S3/113
CPC分类号： H01S3/113 , H01S3/1608
摘要： A saturable absorber Q-switch includes a monocrystalline lattice having the formula Mg 1-x Co x Al y O z where x is greater tha 0 and less than 1, y is greater than 2 and less than about 8, and z is between about 4 and 13. The lattice has tetrahedral and octehedral positions, and most of the magnesium and cobalt occupy tetrahedral positions. In one embodiment, the molar ratio of aluminium to the combined amount of magnesium and cobalt in the monocrystalline lattice can be controlled during growth of the monocrystalline lattice to thereby form a saturable absorber Q-switch that exhibits a 4 T 1 spectrum for the cobalt ion of at least about 1544 µm. In another embodiment, a laser system, such as an Er:glass laser system, includes a saturable absorber-Q-switch that includes a monocrystalline lattice wherein the molar ratio of aluminium to the combined amounts of magnesium and cobalt exceeds 2:1, and preferably is about 6:1, and wherein essentially all of the magnesium and cobalt components of the monocrystalline occupy tetrahedral positions of the lattice.
摘要翻译：可饱和吸收剂Q开关包括具有式Mg1-xCoxAlyOz的单晶晶格，其中x大于0且小于1，y大于2且小于约8，z在约4和13之间。晶格具有四面体和八面体位置，大部分镁和钴占据四面体位置。在一个实施方案中，可以在单晶晶格的生长期间控制铝与单晶晶格中镁和钴的组合量的摩尔比，从而形成对于钴显示出<4> T1光谱的可饱和吸收剂Q开关至少约1544μm的离子。在另一个实施例中，诸如Er：玻璃激光系统的激光系统包括可饱和吸收器Q开关，其包括单晶晶格，其中铝与镁和钴的组合量的摩尔比超过2:1，以及优选约6:1，并且其中单晶的基本上所有的镁和钴组分占据晶格的四面体位置。

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