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1. 发明申请

WO2003084886A1 SPINEL SUBSTRATE AND HETEROEPITAXIAL GROWTH OF III-V MATERIALS THEREON 审中-公开
标题翻译：其中III-V材料的螺旋体基体和异相生长
公开(公告)号：WO2003084886A1
公开(公告)日：2003-10-16
申请号：PCT/US2003/010147
申请日：2003-03-31
申请人： SAINT-GOBAIN CERAMICS & PLASTICS, INC. , KOKTA, Milan, R. , ONG, Hung T.
发明人： KOKTA, Milan, R. , ONG, Hung T.
IPC分类号： C03B15/00
CPC分类号： C30B15/00 , C30B29/26 , Y10T428/12076 , Y10T428/12528 , Y10T428/12667
摘要： A spinel composition of the invention includes a monocrystalline lattice having a formula Mg 1-w α w A1 x-y β y O z , where w is greater than 0 and less than 1, x is greater than 2 and less than about 8, y is less than x, z is equal to or greater than 4 and equal to or less than about 13, α is a divalent cationic element having an ionic radius greater than divalent magnesium, and β is a trivalent cationic element having an ionic radius greater than trivalent aluminum. The monocrystalline lattice has tetrahedral positions and octahedral positions, and most of the magnesium and α occupy tetrahedral positions. In one embodiment, the molar ratio of aluminum to the amount of magnesium, α and β can be controlled during growth of the monocrystalline lattice thereby forming a spinel substrate suitable for heteroepitaxial growth of III-V materials. A method of the invention, includes forming a monocrystalline lattice of spinel composition. A composition includes the spinel composition layer and a III-V layer at the surface of the spinel layer. A method of forming a composite includes depositing the III-V layer onto the surface of the spinel composition using heteroepitaxial techniques.
摘要翻译：本发明的尖晶石组合物包括具有式Mg1-w＆agr; wA1x-y＆bgr; yOz的单晶晶格，其中w大于0且小于1，x大于2且小于约8，y小于x z等于或大于4且等于或小于约13，α是具有大于二价镁的离子半径的二价阳离子元素，β是具有大于三价铝的离子半径的三价阳离子元素。单晶晶格具有四面体位置和八面体位置，大多数镁和α占据四面体位置。在一个实施方案中，可以在单晶晶格生长期间控制铝与镁，α和β的量的摩尔比，从而形成适用于III-V材料的异质外延生长的尖晶石衬底。本发明的方法包括形成尖晶石组合物的单晶晶格。组合物包括尖晶石组合物层和在尖晶石层的表面处的III-V层。形成复合材料的方法包括使用异质外延技术将III-V层沉积到尖晶石组合物的表面上。

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