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    • 61. 发明申请
    • IMPROVED ISOLATION BETWEEN DIFFUSION LINES IN A MEMORY ARRAY
    • 在存储阵列中扩展线之间的改进隔离
    • WO1996010840A1
    • 1996-04-11
    • PCT/US1995011563
    • 1995-09-13
    • INTEL CORPORATION
    • INTEL CORPORATIONONG, Tong-ChernTANG, Daniel, N.
    • H01L21/8246
    • H01L21/7621H01L21/76216H01L21/76221H01L27/105H01L27/11521
    • A method of forming a memory device with improved isolation between diffusion lines. Parallel, spaced apart thick oxide strips (201) are grown on a substrate. Next, spaced apart, parallel strips (302) having a polysilicon (302a) and nitride (302b) layer, oriented perpendicular to the first strips (201), are formed. The oxide (201) between the second strips is removed, followed by an implantation to form source (402) and drain (401) regions. The nitride layer (302b) on the second strips is removed on those strips between two drain diffusions (401) and an oxidation is performed to form self-aligned thick oxide (602) over the source and drain regions. The strips from which the nitride has been removed are also oxidized, thus providing isolation between adjacent drain lines.
    • 一种形成具有改善的扩散线隔离的存储器件的方法。 在衬底上生长平行的间隔开的厚氧化物条(201)。 接下来,形成具有垂直于第一条带(201)定向取向的间隔开的具有多晶硅(302a)和氮化物(302b)层的平行条带(302)。 去除第二条带之间的氧化物(201),随后进行注入以形成源极(402)和漏极(401)区域。 第二条带上的氮化物层(302b)在两个漏极扩散(401)之间的那些条上被去除,并且在源极和漏极区域上进行氧化以形成自对准的厚氧化物(602)。 去除氮化物的条带也被氧化,从而在相邻的排水管线之间提供隔离。
    • 65. 发明申请
    • METHOD AND APPARATUS FOR AUTOMATICALLY SCRUBBING ECC ERRORS IN MEMORY VIA HARDWARE
    • 用于通过硬件自动擦除存储器中的ECC错误的方法和装置
    • WO1995032470A1
    • 1995-11-30
    • PCT/US1995006548
    • 1995-05-23
    • INTEL CORPORATION
    • INTEL CORPORATION
    • G06F11/10
    • G06F11/106G06F11/1056
    • The present invention provides a method and apparatus for automatically scrubbing ECC errors in memory upon the detection of a correctable error in data read from memory. This is performed by providing in a memory controller (MC) memory control logic for controlling accesses to memory, an ECC error checking and correcting unit for checking data read from memory for errors and correcting any correctable errors found in the read data, a first data buffer for storing the corrected read data output (72, 64) from the ECC error checking and correcting unit and a writeback path having an input end coupled to an output of the first data buffer and an output end coupled to memory. Upon the detection of a correctable error in data read from a particular memory location, the ECC error checking and correcting unit signals to the memory control logic the existence of a correctable error in the read data. The memory control logic then obtains exclusive control over the first data buffer and the writeback path to control writing of the corrected read data onto the writeback path and subsequently to memory.
    • 本发明提供一种用于在检测到从存储器读取的数据中的可校正误差时自动擦除存储器中的ECC错误的方法和装置。 这通过在用于控制对存储器的访问的存储器控​​制器(MC)存储器控制逻辑中提供,ECC错误检查和校正单元,用于检查从存储器读取的数据的错误并校正在读取的数据中发现的任何可校正的错误,第一数据 用于存储来自ECC错误检查和校正单元的校正的读取数据输出(72,64)的缓冲器和具有耦合到第一数据缓冲器的输出的输入端的写回路径和耦合到存储器的输出端。 在检测到从特定存储器位置读取的数据中的可校正错误时,ECC错误检查和校正单元向存储器控制逻辑信号发送读取数据中存在可校正错误。 存储器控制逻辑然后获得对第一数据缓冲器和写回路径的排他控制,以控制将校正后的读取数据写入写回路径并随后到存储器。