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    • 48. 发明申请
    • PROCESS AND APPARATUS FOR CLEANING SILICON WAFERS
    • 清洗硅砂的工艺和装置
    • WO0154181A3
    • 2002-01-03
    • PCT/US0102119
    • 2001-01-19
    • LOXLEY TED ALBERT
    • LOXLEY TED ALBERT
    • H01L21/304B08B3/10C23G1/02C23G1/14C25F1/00H01L21/00H01L21/306
    • H01L21/02052B08B3/10C23G1/02C23G1/14C25F1/00H01L21/6704H01L21/67051H01L21/67057
    • An effective electropurge process and apparatus for wet processing of semiconductor wafers applies electrical charges to the wafer surface with an ample voltage sufficient to provide an effective field intensity which can substantially eliminate intolerable sub-0.05 micron "killer" defects when making highly advanced microchips with a feature size or line width less than 0.15 micron. The process can be used with frequent voltage reversal for automated wet-batch cleaning operations using cassettes that hold 10 to 50 wafers at a time and in various other operations involving megasonic transducers, mechanical brush scrubbers, laser cleaners and CMP equipment. The electropurge process is primarily intended for Fab plants where large wafers with a diameter of 200 to 400 mm require 250 to 350 steps including many dry layering, patterning and doping operations and at least 30 wet processing steps.
    • 用于半导体晶片的湿法处理的有效的电镀工艺和设备以足够的电压向晶片表面施加电荷,该电压足以提供有效的场强,其可以在制造高度先进的微芯片时基本上消除不可耐受的亚0.05微米“杀手”缺陷 特征尺寸或线宽小于0.15微米。 该过程可以使用频繁的电压反转来进行自动化的湿批次清洁操作,使用一次可以容纳10到50个晶片的盒,以及涉及兆声波换能器,机械刷洗涤器,激光清洁器和CMP设备的各种其他操作。 电镀工艺主要用于Fab工厂,其中直径为200至400mm的大晶片需要250至350个步骤,包括许多干层压,图案化和掺杂操作以及至少30个湿加工步骤。