会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 42. 发明申请
    • METHOD FOR DESIGNING A SEMICONDUCTOR LASER WITH INTRACAVITY REFLECTING FEATURES, SEMICONDUCTOR LASER AND METHOD OF FABRICATION THEREOF
    • 用于设计具有内反射特征的半导体激光器的方法,半导体激光器及其制造方法
    • WO2006008724A1
    • 2006-01-26
    • PCT/IE2005/000075
    • 2005-07-18
    • UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORKO'BRIEN, StephenO'REILLY, Eoin, Patrick
    • O'BRIEN, StephenO'REILLY, Eoin, Patrick
    • H01S5/10
    • H01S5/1021H01S5/0654H01S5/1017H01S5/22
    • A Fabry-Pérot (FP) laser device (1) has an n-type substrate (2), an active region (3), a p-type cladding (4), an insulator (5), and a contact (6). The cladding (4) comprises a ridge (7) having a number of slots (8). The slots (8) cause a partial longitudinal reflection of the light. The precise locations of the slots are chosen to accurately and predictably achieve a particular selected mode or modes in the output light. A method to design a slot pattern both preferentially selects a particular Fabry-Pérot mode as the peak emission wavelength and also suppresses an arbitrary number of neighbouring Fabry-Pérot modes. The method selects a set of Fabry-Pérot modes in preference to other Fabry-Pérot modes within the cavity. In this way the method addresses the important problems for semiconductor lasers of predetermination of the peak lasing wavelength and also stability of the peak lasing mode with changes in temperature. The method also allows for the fabrication of multimode devices with increased functionality both as individual devices and as component parts of more complex multi-section or multi-element devices.
    • 法布里-Pérot(FP)激光器件(1)具有n型衬底(2),有源区(3),p型覆层(4),绝缘体(5)和触点(6) 。 包层(4)包括具有多个狭槽(8)的脊(7)。 狭缝(8)引起光的部分纵向反射。 狭缝的精确位置被选择以准确地且可预测地实现输出光中特定的所选模式或模式。 设计时隙模式的方法都优先选择特定的法布里 - 派罗模式作为峰值发射波长,并且还抑制任意数量的相邻的法布里 - 佩罗模式。 该方法优先选择一组Fabry-Pérot模式,优先于腔内的其他Fabry-Pérot模式。 以这种方式,该方法解决了半导体激光器预先确定峰值激光波长的重要问题,以及峰值激光模式随温度变化的稳定性。 该方法还允许制造具有增加的功能的多模设备,作为单个设备以及作为更复杂的多段或多元件设备的组成部分。
    • 43. 发明申请
    • SINGLE-WAVELENGTH, UNEQUAL-LENGTH-MULTI-CAVITY GRATING-OUTCOUPLED SURFACE EMITTING LASER WITH STAGGERED TUNED DISTRIBUTED BRAGG REFLECTORS
    • 单波长,不平均长度多孔光栅抛光表面发射激光与分层调谐分布式BRAGG反射器
    • WO2004068659A1
    • 2004-08-12
    • PCT/US2003/023373
    • 2003-07-25
    • PHOTODIGM, INC.
    • MASOOD, TahaPATTERSON, StevenEVANS, GaryAMARASINGHE, Nuditha
    • H01S5/00
    • H01S5/0425H01S5/0654H01S5/1021H01S5/1039H01S5/1215H01S5/125H01S5/18
    • A laser diode system is provided. The laser comprises first and second reflective gratings (301, 305) at each end of the laser. The laser further comprises an outcoupling grating (303) between the first and second reflective gratings, wherein the outcoupling grating (303) couples light out of the laser. The reflectors (301, 305) and outcoupling grating (303) each have a unique wide-band reflective spectrum. A first laser cavity (310) exists between the first and second reflective gratings (301, 305). A second laser cavity (311) exists between the first reflective grating (301) and the outcoupling grating (303). A third laser cavity (312) exists between the second reflective grating (305) and the outcoupling grating (303), and a fourth laser cavity (313) exists with in the outcoupling region. The overlap of reflective spectra determine the lasing wavelengths that reach resonance within each cavity. Wavelengths resonant in one cavity are suppressed in the others unless a wavelength is resonant in all cavities. This matching of mode intensities causes the outcoupled beam to be confined to a single wavelength.
    • 提供了一种激光二极管系统。 激光器包括在激光器的每一端的第一和第二反射光栅(301,305)。 激光器还包括在第一和第二反射光栅之间的输出耦合光栅(303),其中输出耦合光栅(303)将光从激光器耦合。 反射器(301,305)和外耦合光栅(303)各自具有独特的宽带反射光谱。 在第一和第二反射光栅(301,305)之间存在第一激光腔(310)。 在第一反射光栅(301)和外耦合光栅(303)之间存在第二激光腔(311)。 在第二反射光栅(305)和外耦合光栅(303)之间存在第三激光腔(312),并且在外耦合区域中存在第四激光腔(313)。 反射光谱的重叠决定了在每个腔内达到谐振的激光波长。 在一个空腔中谐振的波长在其他腔中被抑制,除非波长在所有空腔中共振。 模式强度的这种匹配使得输出耦合的光束被限制在单个波长。
    • 47. 发明申请
    • SEMICONDUCTOR LASER
    • 半导体激光器
    • WO1992015136A1
    • 1992-09-03
    • PCT/AU1992000048
    • 1992-02-12
    • THE UNIVERSITY OF MELBOURNETUCKER, Rodney, Stuart
    • THE UNIVERSITY OF MELBOURNE
    • H01S03/25
    • H01S5/1021H01S5/0425H01S5/4006H01S5/4018H01S5/4031H01S5/4043H01S5/5027
    • A semiconductor laser comprises a plurality of laser sections (10, 11, 12) defined in a body and isolated electrically from one another. The active region (14) of each section are optically coupled together and electrical connections (9) connect the sections in series and provide connections to an external drive current source. In a practical embodiment the laser is constructed in planar form in a body (16) of semi-insulating material and wells (23a, 23b, 23c) are etched into the body and are provided with metallization (24) which forms the electrical connections. The active region (14) extends continuously through the body with separate p-type anodes thereabove and separate n-type cathodes beneath the active region and extending on either side thereof.
    • 半导体激光器包括限定在体内并彼此电隔离的多个激光部分(10,11,12)。 每个部分的有源区域(14)光学耦合在一起,并且电连接(9)串联连接这些部分并且提供到外部驱动电流源的连接。 在实际实施例中,激光器以半绝缘材料的主体(16)中的平面形式构造,并且将阱(23a,23b,23c)蚀刻到主体中并且设置有形成电连接的金属化(24)。 有源区域(14)在其上方分开的p型阳极连续延伸穿过主体区域,并且在有源区域下方分开并在其任一侧上延伸的n型阴极。