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41. 发明申请

WO2010104520A1 BROAD BAND STRUCTURES FOR SURFACE ENHANCED RAMAN SPECTROSCOPY 审中-公开
标题翻译：表面增强拉曼光谱的宽带结构
公开(公告)号：WO2010104520A1
公开(公告)日：2010-09-16
申请号：PCT/US2009/037167
申请日：2009-03-13
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , LI, Zhiyong , HU, Min
发明人： LI, Zhiyong , HU, Min
IPC分类号： G01J3/44
CPC分类号： G01N21/554 , B82Y30/00 , G01N21/553 , G01N21/658
摘要： Broad band structures (10, 10', 10") for surface enhanced Raman spectroscopy are disclosed herein. Each embodiment of the structure (10, 10', 10") is made up of a metal layer, and a dielectric layer (16A, 16S, 16P) established on at least a portion of the metal layer. The dielectric layer (16A, 16S, 16P) has a controlled thickness that varies from at least one portion of the dielectric layer (16A, 16s, 16p) to at least another portion of the dielectric layer. Nanostructures are established on the dielectric layer (16A, 16S, 16P) at least at the portion and the other portion, the nanostructures thus being configured to exhibit variable plasmon resonances.
摘要翻译：本文公开了用于表面增强拉曼光谱的宽带结构（10,10'，10“）。结构（10,10'，10”）的每个实施例由金属层和电介质层（16A， 16S，16P）建立在金属层的至少一部分上。电介质层（16A，16S，16P）具有从电介质层（16A，16s，16p）的至少一部分至电介质层的至少另一部分变化的受控厚度。至少在部分和另一部分，在介电层（16A，16S，16P）上建立纳米结构，因此纳米结构被配置为展现可变的等离子体共振。

42. 发明申请

WO2006081565A1 MONOLITHIC SYSTEM AND METHOD FOR ENHANCED RAMAN SPECTROSCOPY 审中-公开
标题翻译：用于增强拉曼光谱的单体系统和方法
公开(公告)号：WO2006081565A1
公开(公告)日：2006-08-03
申请号：PCT/US2006/003264
申请日：2006-01-26
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. , ISLAM, M., Saiful , WANG, Shih-Yuan , WU, Wei , LI, Zhiyong , WILLIAMS, R., Stanley
发明人： ISLAM, M., Saiful , WANG, Shih-Yuan , WU, Wei , LI, Zhiyong , WILLIAMS, R., Stanley
IPC分类号： G01N21/65 , G01J3/44
CPC分类号： G01N21/658 , G01N2201/0873
摘要： Devices, systems, and methods for enhancing Raman spectroscopy and hyper-Raman are disclosed. A molecular analysis device (100', 100") for performing Raman spectroscopy comprises a substrate (110) and a laser source (120) disposed on the substrate (110). The laser source (120) may be configured for generating a laser radiation (125), which may irradiate an analyte (31 ) disposed on a Raman enhancement structure (300). The Raman enhancement structure (300) may be disposed in a waveguide (130). The molecular analysis device (100', 100") also includes a wavelength demultiplexer (240) and radiation sensors (290) disposed on the substrate (110) and configured for receiving a Raman scattered radiation (160), which may be generated by the irradiation of the analyte (310) and Raman enhancement structure (300).
摘要翻译：公开了用于增强拉曼光谱和超拉曼的装置，系统和方法。用于进行拉曼光谱分析的分子分析装置（100'，100“）包括基板（110）和设置在基板（110）上的激光源（120），激光源（120）可以被配置为产生激光辐射（125），其可以照射设置在拉曼增强结构（300）上的分析物（31），拉曼增强结构（300）可以设置在波导管（130）中，分子分析装置（100'，100“）还包括布置在衬底（110）上并被配置用于接收拉曼散射辐射（160）的波长解复用器（240）和辐射传感器（290），其可以通过分析物（310）的照射和拉曼增强结构（300）。

43. 发明申请

WO2007056603A2 MULTI-TIERED NETWORK FOR GATHERING DETECTED CONDITION INFORMATION 审中-公开
标题翻译：多层次网络检测条件信息
公开(公告)号：WO2007056603A2
公开(公告)日：2007-05-18
申请号：PCT/US2006/044021
申请日：2006-11-08
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. , BRATKOVSKI, Alexandre M, , LI, Zhiyong , LYON, Geoff , KUEKES, Philip J, , WANG, Shih-yuan , WILLIAMS, R Stanley,
发明人： BRATKOVSKI, Alexandre M, , LI, Zhiyong , LYON, Geoff , KUEKES, Philip J, , WANG, Shih-yuan , WILLIAMS, R Stanley,
IPC分类号： H04L29/08
CPC分类号： G06K7/0008 , H04L67/12
摘要： A multi-tiered network (100, 100') for gathering detected condition information includes a first tier (102) having first tier nodes (104) and a second tier (106) having a second tier node (108). The second tier node (108) is operable to receive detected condition information from at least one of the first tier nodes (104) in a substantially autonomous manner. In addition, the second tier node (108) is operable to at least one of store, process, and transmit the detected condition information. The network (100, 100') also includes a third tier (110) having a third tier node (112) configured to receive the detected condition information and to at least one of store and process the detected condition information.
摘要翻译：用于收集检测到的条件信息的多层网络（100,100'）包括具有第一层节点（104）的第一层（102）和具有第二层节点（108）的第二层（106）。第二层节点（108）可操作以基本上自主的方式从第一层节点（104）中的至少一个接收检测到的条件信息。此外，第二层节点（108）可操作以存储，处理和发送检测到的条件信息中的至少一个。网络（100,100'）还包括具有第三层节点（112）的第三层（110），其被配置为接收检测到的条件信息以及存储和处理检测到的条件信息中的至少一个。

44. 发明申请

WO2016175742A1 DYNAMIC LOGIC MEMCAP 审中-公开
标题翻译：动态LOGIC MEMCAP
公开(公告)号：WO2016175742A1
公开(公告)日：2016-11-03
申请号：PCT/US2015/027767
申请日：2015-04-27
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P..
发明人： GE, Ning , LI, Zhiyong , YANG, Jianhua , WILLIAMS, Stanley
IPC分类号： H01L21/027 , H01L27/108
CPC分类号： G03F7/16 , B41J2/04541 , B41J2/04543 , B41J2/0458 , B41J2/14129 , B41J2202/13 , G11C13/0007 , G11C13/0023 , G11C13/0069 , G11C19/28 , G11C2213/15 , G11C2213/31 , G11C2213/32 , H01L27/10817 , H01L27/2436 , H01L27/2463 , H01L28/87 , H01L28/91 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/147 , H01L45/1675 , H01L45/1683
摘要： An integrated circuit may include a substrate with a plurality of transistors formed in the substrate. The plurality of transistors may be coupled to a first metal layer formed over the plurality of transistors. A plurality of high dielectric nanometer capacitors may be formed of memristor switch material between the first metal layer and a second metal layer formed over the plurality of high dielectric capacitors. The plurality of high dielectric capacitors may operate as memory storage cells in dynamic logic.
摘要翻译：集成电路可以包括在衬底中形成有多个晶体管的衬底。多个晶体管可以耦合到形成在多个晶体管上的第一金属层。多个高介电纳米电容器可以由在第一金属层和形成在多个高介电电容器上的第二金属层之间的忆阻开关材料形成。多个高介电电容器可以作为动态逻辑中的存储器存储单元来操作。

45. 发明申请

WO2016167763A1 PRINTHEADS WITH HIGH DIELECTRIC EPROM CELLS 审中-公开
标题翻译：具有高介电EPROM细胞的印刷
公开(公告)号：WO2016167763A1
公开(公告)日：2016-10-20
申请号：PCT/US2015/025944
申请日：2015-04-15
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： GE, Ning , LI, Zhiyong , KOH, Ser Chia , HO, Chaw Sing
IPC分类号： B41J2/045 , B41J2/07 , B41J2/17
CPC分类号： B41J2/14129 , B41J2/14072 , B41J2/175 , B41J2/1753 , B41J2/17546 , B41J2202/13
摘要： In one example in accordance with the present disclosure a printhead with a number of high dielectric EPROM cells is described. The printhead is to deposit fluid onto a print medium. The printhead also includes a number of EPROM cells. Each EPROM cell includes a substrate having a source and a drain, a floating gate separated from the substrate by a first dielectric layer, and a control gate separate from the floating gate by a second dielectric layer. The second dielectric layer includes a high-dielectric constant material.
摘要翻译：在根据本公开的一个示例中，描述了具有多个高介电EPROM单元的打印头。打印头将流体沉积到打印介质上。打印头还包括多个EPROM单元。每个EPROM单元包括具有源极和漏极的衬底，通过第一介电层与衬底分离的浮动栅极以及通过第二介电层与浮置栅极分离的控制栅极。第二介电层包括高介电常数材料。

46. 发明申请

WO2016068872A1 PRINTHEAD WITH MEMRISTORS HAVING DIFFERENT STRUCTURES 审中-公开
标题翻译：用具有不同结构的电容器打印
公开(公告)号：WO2016068872A1
公开(公告)日：2016-05-06
申请号：PCT/US2014/062600
申请日：2014-10-28
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： GE, Ning , YANG, Jianhua , LI, Zhiyong , WILLIAMS, R., Stanley
IPC分类号： B41J2/175 , B41J2/135
CPC分类号： B41J2/14201 , B41J2/14016 , B41J2/1753 , B41J2/17546 , B41J2202/17
摘要： A printhead with a number of memristors having different structures is described. The printhead includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening. The printhead also includes a first number of memristors having a first structure and a second number of memristors having a second structure. The second structure is different than the first structure.
摘要翻译：描述了具有不同结构的多个忆阻器的打印头。打印头包括多个喷嘴以将一定量的流体沉积到打印介质上。每个喷嘴包括用于保持流体量的喷射室，用于将流体分配到打印介质上的开口，以及喷射器，以将流体的量通过开口排出。打印头还包括具有第一结构的第一数量的忆阻器和具有第二结构的第二数量的忆阻器。第二结构与第一结构不同。

47. 发明申请

WO2016068841A1 PRINTHEAD WITH A NUMBER OF HIGH RESISTANCE RATIO MEMRISTORS 审中-公开
标题翻译：带有多个高电阻比例器的PRINTHEAD
公开(公告)号：WO2016068841A1
公开(公告)日：2016-05-06
申请号：PCT/US2014/062379
申请日：2014-10-27
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： GE, Ning , YANG, Jianhua , LI, Zhiyong , ZHANG, Max
IPC分类号： B41J29/393 , B41J2/175
CPC分类号： B41J2/175 , B41J2/14016 , B41J2/1753 , B41J2/17546 , B41J2202/17
摘要： A printhead with a number of high resistance ratio memristors is described. The printhead includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening. The printhead also includes a number of memristor banks connected in parallel, in which at least one of the number of memristor banks includes a number of high resistance ratio memristors. The printhead also includes a number of resistors disposed between a controller of a printer and the number of memristor banks to regulate the voltage to the number of memristor banks.
摘要翻译：描述了具有多个高电阻比忆阻器的打印头。打印头包括多个喷嘴以将一定量的流体沉积到打印介质上。每个喷嘴包括用于保持流体量的喷射室，用于将流体分配到打印介质上的开口，以及喷射器，以将流体的量通过开口排出。打印头还包括并联连接的多个忆阻器组，其中多个忆阻器组中的至少一个包括多个高电阻比忆阻器。打印头还包括设置在打印机的控制器和忆阻器组之间的多个电阻器，以调节针对忆阻器组的数量的电压。

48. 发明申请

WO2016014089A1 ASYMMETRICALLY SELECTING MEMORY ELEMENTS 审中-公开
标题翻译：非对称地选择存储元素
公开(公告)号：WO2016014089A1
公开(公告)日：2016-01-28
申请号：PCT/US2014/048306
申请日：2014-07-25
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： KIM, Kyung Min , YANG, Jianhua , LI, Zhiyong
IPC分类号： G11C11/16 , G11C7/10
CPC分类号： G11C13/003 , G11C2013/0073 , G11C2213/72
摘要： A system for asymmetrically selecting a memory element is described. The system includes a number of memory cells in a crossbar array. Each memory cell includes a memory element to store information. The memory element is defined as an intersection between a column electrode and a row electrode of the crossbar array. Each memory cell also includes a selector to select a target memory element by relaying a first selecting voltage to a column electrode that corresponds to the target memory element and relaying a second selecting voltage to a row electrode that corresponds to the target memory element. The system also includes a controller to pass a first standing voltage to column electrodes of the crossbar array and to pass a second standing voltage to row electrodes of the crossbar array. The first standing voltage is different than the second standing voltage.
摘要翻译：描述用于非对称地选择存储元件的系统。该系统包括交叉开关阵列中的多个存储单元。每个存储单元包括存储信息的存储元件。存储元件被定义为交叉开关阵列的列电极和行电极之间的交点。每个存储单元还包括选择器，通过将第一选择电压中继到与目标存储器元件对应的列电极并将第二选择电压中继到与目标存储元件对应的行电极来选择目标存储器元件。该系统还包括控制器，用于将第一直立电压传递到交叉开关阵列的列电极，并将第二直立电压传递到交叉开关阵列的行电极。第一直立电压不同于第二直立电压。

49. 发明申请

WO2015065455A1 PRINTHEADS HAVING MEMORIES FORMED THEREON 审中-公开
标题翻译：具有形成记忆的主题
公开(公告)号：WO2015065455A1
公开(公告)日：2015-05-07
申请号：PCT/US2013/067872
申请日：2013-10-31
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： YANG, Jianhua , GE, Ning , LI, Zhiyong
IPC分类号： B41J2/045 , B41J2/14
CPC分类号： B41J2/14072 , B41J2/04541 , B41J2/0458 , B41J2/14016 , B41J2/14129 , B41J2/1601 , B41J2/1607 , B41J2/1626 , B41J2/1631 , B41J2202/13 , H01L21/02565 , H01L27/24 , H01L27/2463 , H01L45/00 , H01L45/04 , H01L45/08 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/1633 , H01L45/1675
摘要： Printheads having memories formed thereon are disclosed. An example apparatus includes a printhead body comprising a first metal layer. The example apparatus also include a memory formed on the printhead body. The memory includes the first metal layer as a first electrode, a second metal layer as a second electrode, and a switching oxide layer between the first and second metal layers.
摘要翻译：公开了其上形成有记忆的打印头。一个示例性设备包括一个包括第一金属层的打印头主体。示例性装置还包括形成在打印头主体上的存储器。存储器包括作为第一电极的第一金属层，作为第二电极的第二金属层和在第一和第二金属层之间的开关氧化物层。

50. 发明申请

WO2014116238A1 CHEMICAL SENSING DEVICE 审中-公开
标题翻译：化学传感装置
公开(公告)号：WO2014116238A1
公开(公告)日：2014-07-31
申请号：PCT/US2013/023266
申请日：2013-01-25
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： ZHOU, Zhang-Lin , LI, Zhiyong , BARCELO, Steven J.
IPC分类号： G01N21/17 , G01N33/483
CPC分类号： B82Y15/00 , G01N21/554 , G01N21/648 , G01N21/658 , G01N2021/651
摘要： The present disclosure is drawn to chemical sensing devices and associated methods. In one example, a chemical sensing device can include a substrate; an elongated nanostructure having an attachment end and a free end opposite the attachment end, the attachment end affixed to the substrate and the free end including a metal; and a metal oxide coating applied to the elongated nanostructure. In one example, a functional group can be attached to the coating via a covalent bond.
摘要翻译：本公开涉及化学感测装置和相关方法。在一个示例中，化学感测装置可以包括基底; 细长的纳米结构具有附接端和与附接端相对的自由端，所述附接端固定到所述基底并且所述自由端包括金属; 以及施加到细长纳米结构的金属氧化物涂层。在一个实例中，官能团可以通过共价键连接到涂层上。

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