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31. 发明申请

WO2018053678A1 METHODS AND APPARATUS FOR CLEANING SUBSTRATES 审中-公开
标题翻译：用于清洁基材的方法和设备
公开(公告)号：WO2018053678A1
公开(公告)日：2018-03-29
申请号：PCT/CN2016/099428
申请日：2016-09-20
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： WANG, Hui , WANG, Xi , CHEN, Fuping , CHEN, Fufa , WANG, Jian , ZHANG, Xiaoyan , JIN, Yinuo , JIA, Zhaowei , WANG, Jun , LI, Xuejun
IPC分类号： H01L21/67
摘要： A method for cleaning a substrate without damaging a patterned structure on the substrate using an ultra/mega sonic device (1003), comprises: applying a liquid into a space between the substrate and the ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive said ultra/mega sonic device (1003); after a micro jet generated by a bubble implosion and before said micro jet generated by the bubble implosion damaging the patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f2 and power P2 to drive said ultra/mega sonic device (1003); after the temperature inside a bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f1 and power P1 again; repeating above steps till the substrate being cleaned.
摘要翻译：一种使用超大型声波装置（1003）来清洁基板而不损坏基板上的图案化结构的方法包括：将液体施加到基板与超大型声波之间的空间中设备; 以频率f1和功率P1设置超/兆声波电源以驱动所述超声/兆声波设备（1003）; 在由气泡内爆产生的微射流之后且在由气泡内爆产生的所述微射流损坏衬底上的图案化结构之后，以频率f2和功率P2设置所述超/兆声波电源以驱动所述超声/兆声波装置（ 1003）; 在气泡内的温度冷却到设定温度之后，再次设置频率f1和功率P1的所述超大/超声波电源; 重复上述步骤直至清洗基板。

32. 发明申请

WO2017173588A1 METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于清洁半导体晶片的方法和设备
公开(公告)号：WO2017173588A1
公开(公告)日：2017-10-12
申请号：PCT/CN2016/078510
申请日：2016-04-06
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： WANG, Jun , WANG, Hui , CHEN, Fufa , CHEN, Fuping , WANG, Jian , WANG, Xi , ZHANG, Xiaoyan , JIN, Yinuo , JIA, Zhaowei , XIE, Liangzhi , LI, Xuejun
IPC分类号： H01L21/67
CPC分类号： H01L21/67253 , H01L21/67051 , H01L21/67057
摘要： A method for cleaning semiconductor substrate (1010,2010) without damaging patterned structure on the semiconductor substrate (1010,2010) using ultra/mega sonic device (1003,2003) comprises applying liquid into a space between a substrate (1010,2010) and an ultra/mega sonic device (1003,2003); setting an ultra/mega sonic power supply at frequency f1 and power P1 to drive the ultra/mega sonic device (1003,2003); before bubble cavitation in the liquid damaging patterned structure on the substrate (1010,2010), setting the ultra/mega sonic power supply at zero output;after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency f1 and power P1 again;detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply;comparing the detected power on time with a preset time τ1, or comparing the detected power off time with a preset time τ2, or comparing detected amplitude of each waveform with a preset value, if the detected power on time is longer than the preset time τ1, or the detected power off time is shorter than the preset time τ2, or the detected amplitude of any waveform is larger than the preset value, shut down the ultra/mega sonic power supply and send out an alarm signal.
摘要翻译：一种使用超/超声波装置（1003,2003）来清洁半导体衬底（1010,2010）而不损坏半导体衬底（1010,2010）上的图案化结构的方法包括将液体施加到衬底（1010,2010）和超/兆声波装置（1003,2003）; 以频率f1和功率P1设置超/超声波电源以驱动超/超声波设备（1003,2003）; 在衬底（1010,2010）上的液体损坏图案化结构中产生气泡空化之前，将超大/超声波电源设置为零输出;在气泡冷却至设定温度之后，将超/兆声波电源设置为再次检测频率f1和功率P1;分别检测功率P1和频率f1和断电时间的功率接通时间，或者检测超大功率电源输出的每个波形的幅度;将检测到的功率接通时间与预设时间τ1进行比较，或者将检测到的断电时间与预设时间τ2进行比较，或者将检测到的每个波形的幅度与预设值进行比较，如果检测到的功率开启时间大于预设时间τ1，或者检测到的关机时间短于预设时间时间τ2，或任何波形的检测幅度大于预设值，关闭超大音速电源并发出报警信号。

33. 发明申请

WO2017070924A1 METHOD FOR ELECTROCHEMICAL POLISH IN CONSTANT VOLTAGE MODE 审中-公开
标题翻译：在恒定电压模式下的电化学抛光方法
公开(公告)号：WO2017070924A1
公开(公告)日：2017-05-04
申请号：PCT/CN2015/093343
申请日：2015-10-30
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： JIN, Yinuo , DAI, Yingwei , WANG, Jian , WANG, Hui
IPC分类号： C25F3/22
CPC分类号： C25F3/22 , C25F7/00
摘要： A method for electrochemical polish in constant voltage mode, comprising: presetting a constant current recipe with a current distribution which comprises multiple positions with different radius on a wafer and a predetermined current for each position; applying the constant current recipe to polish a first wafer; detecting and recording the voltage of each position during the polish; generating a constant voltage recipe with a voltage distribution which comprises the multiple positions and the recorded voltage of each position; and applying the constant voltage recipe to polish a second wafer.
摘要翻译：一种恒压模式电化学抛光的方法，其特征在于，包括以下步骤：预置恒流配方，所述恒流配方的电流分布包括晶圆上不同半径的位置和每个位置的预定电流; 应用恒定电流配方来抛光第一晶片; 在抛光过程中检测并记录每个位置的电压; 生成具有包括多个位置和每个位置的记录电压的电压分布的恒定电压配方; 并施加恒定电压配方来抛光第二个晶片。

34. 发明申请

WO2016183811A1 METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：清洗半导体波形的方法和装置
公开(公告)号：WO2016183811A1
公开(公告)日：2016-11-24
申请号：PCT/CN2015/079342
申请日：2015-05-20
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： WANG, Hui , CHEN, Fufa , CHEN, Fuping , WANG, Jian , WANG, Xi , ZHANG, Xiaoyan , JIN, Yinuo , JIA, Zhaowei , XIE, Liangzhi , WANG, Jun , LI, Xuejun
IPC分类号： H01L21/02 , B08B3/12 , B08B3/10
CPC分类号： H01L21/67253 , B08B3/12 , H01L21/02057 , H01L21/67051 , H01L21/67092
摘要： A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f 1 and power P 1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f 2 and power P 2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f 1 and power P 1 again; repeating above steps till the substrate being cleaned. Normally, if f 1 ＝f 2 , then P 2 is equal to zero or much less than P 1 ; if P 1 ＝P 2 , then f 2 is higher than f 1 ; if the f 1 2 , then, P 2 can be either equal or less than P 1 .
摘要翻译：一种用于使用超/超声波装置清洁半导体衬底而不损坏衬底上的图案结构的方法，包括将液体施加到衬底和超/超声波器件之间的空间中; 设置频率f1和功率P1的超/超声波电源，以驱动所述超/超声波设备; 在基板上的所述液体破坏性图案化结构中的气泡空化之前，将所述超/超声波电源设置在频率f2和功率P2以驱动所述超/超声波装置; 在气泡冷却后的温度降至设定温度后，再次将频率f1和功率P1设置为超声波/超声波电源; 重复上述步骤直到清洁基材。通常，如果f1 = f2，则P2等于零或远小于P1; 如果P1 = P2，则f2高于f1; 如果f1

35. 发明申请

WO2016058175A1 BARRIER LAYER REMOVAL METHOD AND SEMICONDUCTOR STRUCTURE FORMING METHOD 审中-公开
标题翻译： BARRIER层去除方法和半导体结构形成方法
公开(公告)号：WO2016058175A1
公开(公告)日：2016-04-21
申请号：PCT/CN2014/088812
申请日：2014-10-17
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： JIA, Zhaowei , XIAO, Dongfeng , WANG, Jian , WANG, Hui
IPC分类号： H01L21/302
CPC分类号： H01L21/7684 , H01L21/31116 , H01L21/32115 , H01L21/32125 , H01L21/3213 , H01L21/32134 , H01L21/32135 , H01L21/32138 , H01L21/76849 , H01L21/76865
摘要： The present invention provides a barrier layer removal method, wherein the barrier layer includes at least one layer of ruthenium or cobalt, the method comprising: removing the barrier layer including ruthenium or cobalt formed on non-recessed areas of a semiconductor structure by thermal flow etching. The present invention further provides a semiconductor structure forming method, comprising: providing a semiconductor structure which includes a dielectric layer, a hard mask layer formed on the dielectric layer, recessed areas formed on the hard mask layer and the dielectric layer, a barrier layer including at least one layer of ruthenium or cobalt formed on the hard mask layer, sidewalls of the recessed areas and bottoms of the recessed areas, a metal layer formed on the barrier layer and filling the recessed areas; removing the metal layer formed on the non-recessed areas and the metal in the recessed areas, and remaining a certain amount of metal in the recessed areas; removing the barrier layer including ruthenium or cobalt formed on the non-recessed areas, and the hard mask layer by thermal flow etching.
摘要翻译：本发明提供一种阻挡层去除方法，其中阻挡层包括至少一层钌或钴，该方法包括：通过热流蚀刻去除在半导体结构的非凹陷区域上形成的包含钌或钴的阻挡层。本发明还提供一种半导体结构形成方法，包括：提供包括电介质层，形成在电介质层上的硬掩模层，形成在硬掩模层和电介质层上的凹陷区域的半导体结构，包括形成在硬掩模层上的至少一层钌或钴层，凹陷区域的侧壁和凹陷区域的底部，形成在阻挡层上并填充凹陷区域的金属层; 去除形成在非凹陷区域上的金属层和凹陷区域中的金属，并且在凹陷区域中保留一定量的金属; 通过热流蚀刻去除包括形成在非凹陷区域上的钌或钴的阻挡层和硬掩模层。

36. 发明申请

WO2016058174A1 BARRIER LAYER REMOVAL METHOD AND SEMICONDUCTOR STRUCTURE FORMING METHOD 审中-公开
标题翻译： BARRIER层去除方法和半导体结构形成方法
公开(公告)号：WO2016058174A1
公开(公告)日：2016-04-21
申请号：PCT/CN2014/088810
申请日：2014-10-17
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： JIN, Yinuo , DAI, Yingwei , WANG, Jian , WANG, Hui
IPC分类号： H01L21/465
CPC分类号： H01L21/76865 , H01L21/32115 , H01L21/3213 , H01L21/32135 , H01L21/7684
摘要： Provided is a barrier layer removal method, wherein the barrier layer includes at least one layer of cobalt or ruthenium, comprising: removing the layer of cobalt or ruthenium which is formed on non-recessed areas of a semiconductor structure by electropolishing. Also provided is a semiconductor structure forming method, comprising: providing a semiconductor structure which includes a dielectric layer, a hard mask layer formed on the dielectric layer, recessed areas formed on the hard mask layer and the dielectric layer, a barrier layer including at least one layer of cobalt or ruthenium formed on the hard mask layer, sidewalls of the recessed areas and bottoms of the recessed areas, a metal layer formed on the layer of cobalt or ruthenium and filling the recessed areas; removing the metal layer and the layer of cobalt or ruthenium both of which are formed on non-recessed areas by electropolishing; removing the hard mask layer by thermal flow etching.
摘要翻译：提供了一种阻挡层去除方法，其中阻挡层包括至少一层钴或钌，其包括：通过电解抛光去除在半导体结构的非凹陷区域上形成的钴或钌层。还提供了一种半导体结构形成方法，包括：提供包括电介质层，形成在电介质层上的硬掩模层，形成在硬掩模层和电介质层上的凹陷区域的半导体结构，至少包括形成在硬掩模层上的一层钴或钌，凹陷区域的侧壁和凹陷区域的底部，形成在钴或钌层上并填充凹陷区域的金属层; 通过电解抛光去除金属层和钴或钌层，两者都形成在非凹陷区域上; 通过热流蚀刻去除硬掩模层。

37. 发明申请

WO2016004573A1 METHOD FOR FORMING METAL INTERCONNECTION 审中-公开
标题翻译：形成金属互连的方法
公开(公告)号：WO2016004573A1
公开(公告)日：2016-01-14
申请号：PCT/CN2014/081790
申请日：2014-07-08
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： WANG, Jian , JIA, Zhaowei , JIN, Yinuo , XIAO, Dongfeng , YANG, Guipu , DAI, Yingwei , WANG, Hui
IPC分类号： H01L21/768
CPC分类号： H01L21/76865 , H01L21/32135 , H01L21/7684
摘要： A method for forming metal interconnection, which can avoid a barrier layer (204) deposited on the sidewall of recessed area (207) being over etched. The method includes the following steps: forming a recessed area (207) on a hard mask layer (203) and a dielectric layer (202); depositing a barrier layer (204) on the hard mask layer(203), sidewall of the recessed area (207) and bottom of the recessed area (207); depositing metal (205) on the barrier layer (204) and filling the recessed area (207) with the metal (205); removing the metal (205) deposited on non-recessed area by electropolishing and the metal (205) filled in the recessed area (207) being over polished to form a dishing, an oxide film (206) being formed on the barrier layer (204) during the electropolishing process; removing the oxide film (206) on the barrier layer (204) deposited on the hard mask layer (203), and retaining a certain thickness of oxide film (206) on the barrier layer (204) deposited on the sidewall of the recessed area (207); removing the barrier layer (204) and the hard mask layer (203) by etching which has a high selectivity to the oxide film (206), the retained oxide film (206) preventing the barrier layer (204) deposited on the sidewall of the recessed area (207) from being over etched.
摘要翻译：一种用于形成金属互连的方法，其可以避免沉积在凹陷区域（207）的侧壁上的阻挡层（204）被过蚀刻。该方法包括以下步骤：在硬掩模层（203）和电介质层（202）上形成凹陷区域（207）; 在硬掩模层（203），凹陷区域（207）的侧壁和凹陷区域（207）的底部上沉积阻挡层（204）; 在所述阻挡层（204）上沉积金属（205）并用所述金属（205）填充所述凹陷区域（207）; 通过电解抛光去除沉积在非凹陷区域上的金属（205），并且填充在凹陷区域（207）中的金属（205）被抛光以形成凹陷，在阻挡层（204）上形成氧化膜（206））在电抛光过程中; 去除沉积在硬掩模层（203）上的阻挡层（204）上的氧化物膜（206），并且将一定厚度的氧化物膜（206）保留在沉积在凹陷区域的侧壁上的阻挡层（204）上（207）; 通过对氧化膜（206）具有高选择性的蚀刻来去除阻挡层（204）和硬掩模层（203），所述保留氧化物膜（206）防止沉积在所述氧化膜的侧壁上的阻挡层（204）凹陷区域（207）不被过蚀刻。

38. 发明申请

WO2021189181A1 PLATING APPARATUS AND PLATING METHOD 审中-公开
公开(公告)号：WO2021189181A1
公开(公告)日：2021-09-30
申请号：PCT/CN2020/080622
申请日：2020-03-23
申请人： ACM RESEARCH (SHANGHAI) , INC.
发明人： WANG, Hui , WANG, Jian , YANG, Hongchao , JIA, Zhaowei
IPC分类号： C25D17/00 , C25D17/06 , C25D7/12
摘要： The present invention discloses plating apparatuses and plating methods for metal deposition on a substrate with pattern structures. In an embodiment, a plating apparatus comprises a plating bath configured to accommodate electrolyte, a substrate holding module configured to hold a substrate, and at least one driving device configured to drive the substrate holding module together with the substrate to horizontally vibrate and/or vertically vibrate during the substrate being immersed into the electrolyte to be plated. The present invention can enhance mass transfer during the substrate being plated by vibrating the substrate holding module so as to raise plating rate and uniformly plating on the pattern structures.

39. 发明申请

WO2019232741A1 APPARATUS AND METHOD FOR CLEANING SEMICONDUCTOR WAFERS 审中-公开
公开(公告)号：WO2019232741A1
公开(公告)日：2019-12-12
申请号：PCT/CN2018/090227
申请日：2018-06-07
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： WANG, Hui , FANG, Zhiyou , WU, Jun , LU, Guanzhong , CHEN, Fuping , WANG, Jian , WANG, Jun , WANG, Deyun
IPC分类号： H01L21/00
摘要： Methods and apparatuses for cleaning semiconductor wafers(202). Thereinto, a method comprises transferring one or more wafers(202) to at least one first tank(201) containing cleaning chemical, one or more second tanks(207) containing cleaning liquid successively for implementing batch cleaning process; taking the one or more wafers(202) out of the cleaning liquid in the one or more second tanks(207) and transferring the one or more wafers(202) to one or more single wafer cleaning modules(510) for implementing single wafer cleaning and drying processes; wherein control and keep a certain thickness of liquid film(204,504) on the one or more wafers(202) from the moment of the one or more wafers out of the cleaning chemical in the at least one first tank(201) till the one or more wafers(202) are immersed in the cleaning liquid of the one or more second tanks(207), and/or from the moment of the one or more wafers(202) out of the cleaning liquid in the one or more second tanks(207) till the one or more wafers(202) are transferred to the one or more single wafer cleaning modules(510).

40. 发明申请

WO2017092029A1 APPARATUS FOR HOLDING SUBSTRATE 审中-公开
标题翻译：用于保持衬底的装置
公开(公告)号：WO2017092029A1
公开(公告)日：2017-06-08
申请号：PCT/CN2015/096402
申请日：2015-12-04
申请人： ACM RESEARCH (SHANGHAI) INC.
发明人： WANG, Hui , JIA, Zhaowei , YANG, Hongchao , WU, Jun , WANG, Jian
IPC分类号： C25D17/06
CPC分类号： C25D17/06 , C25D17/001 , H01L21/2885
摘要： An apparatus for holding a substrate (113) has a chuck cup (101), a seal shell (111), a chuck plate (102) and a vertical driving device (103). The seal shell (111) has a bottom wall (1111), an outer wall (1112) and an inner wall (1114). The inner wall (1114) forms a lip seal portion (1115). The bottom wall (1111) and the outer wall (1112) of the seal shell (111) respectively wrap the bottom surface and the outer surface of the base portion (1011) of the chuck cup (101). The lip seal portion (1115) wraps the supporting portion (1014) of the chuck cup (101) for sealing the edge of the front side of the substrate (113). The apparatus protects the edge of the front side of the substrate, the back side of the substrate and the chuck cup from contacting with the electrolyte solution.
摘要翻译：用于保持衬底（113）的设备具有卡盘杯（101），密封壳（111），卡盘板（102）和竖直驱动装置（103）。密封壳体（111）具有底壁（1111），外壁（1112）和内壁（1114）。内壁（1114）形成唇形密封部分（1115）。密封壳体（111）的底壁（1111）和外壁（1112）分别包住卡盘杯体（101）的基部（1011）的底面和外表面。唇形密封部分（1115）包裹卡盘杯（101）的支撑部分（1014），用于密封基板（113）的前侧的边缘。该装置保护衬底正面的边缘，衬底的背面和夹盘杯不与电解质溶液接触。

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