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    • 37. 发明申请
    • ELECTROCHEMICAL DEPOSITION AND X-RAY FLUORESCENCE SPECTROSCOPY
    • 电化学沉积和X射线荧光光谱
    • WO2014026932A1
    • 2014-02-20
    • PCT/EP2013/066756
    • 2013-08-09
    • ELEMENT SIX LIMITED
    • NEWTON, Mark EdwardMACPHERSON, Julie VictoriaMOLLART, Timothy Peter
    • G01N23/223G01N27/42G01N27/48G01N27/30G01N27/49
    • G01N23/223G01N23/2204G01N27/27G01N27/30G01N27/42G01N27/48G01N27/49G01N2223/076
    • an x-ray fluorescence spectrometer (52); and a sample holder (2) for the x-ray fluorescence (XRF) spectrometer (52), wherein the sample holder (2) comprises: an electrically conductive synthetic diamond electrode (4) providing a front surface (6) on which chemical species can be electro- deposited from a solution (48) comprising the chemical species; an ohmic contact (8) disposed on a rear surface of the electrically conductive synthetic diamond electrode (4); and an electrical connector (10) which is connected to the ohmic contact (8), and wherein the x-ray fluorescence spectrometer (52) comprises: an XRF sample stage (58) configured to receive the sample holder (2); an x-ray source (54) configured to apply an x-ray excitation beam to the chemical species electro-deposited on the electrically conductive synthetic diamond electrode (4) when the sample holder (2) is mounted to the XRF sample stage (58); an x-ray detector (60) configured to receive x-rays emitted from the chemical species electro-deposited on the front surface (6) of the electrically conductive synthetic diamond material when the sample holder (2) is mounted to the XRF sample stage (58); and a processor (62) configured to generate x-ray fluorescence spectroscopic data based on the x-rays received by the x-ray detector. Such system allows to carry out simultaneously and in-situ stripping voltammetry measurements together with X-ray fluorescence measurements.
    • x射线荧光光谱仪(52); 和用于x射线荧光(XRF)光谱仪(52)的样品架(2),其中样品架(2)包括:导电合成金刚石电极(4),其提供前表面(6) 可以从包含化学物质的溶液(48)电沉积; 设置在导电合成金刚石电极(4)的后表面上的欧姆接触(8); 和连接到所述欧姆接触件(8)的电连接器(10),并且其中所述x射线荧光光谱仪(52)包括:XRF样品台(58),构造成接收所述样品架(2); x射线源(54),被配置为当样品保持器(2)安装到XRF样品台(58)时将X射线激发光束施加到电沉积在导电合成金刚石电极(4)上的化学物质上 ); x射线检测器(60),其构造成当样品保持器(2)安装到XRF样品台时,接收从导电合成金刚石材料的前表面(6)上电沉积的化学物质发射的x射线 (58); 以及处理器(62),其被配置为基于由所述x射线检测器接收的X射线来生成x射线荧光光谱数据。 这种系统允许同时进行原位溶出伏安法测量以及X射线荧光测量。
    • 38. 发明申请
    • IN-SITU ELECTROCHEMICAL DEPOSITION AND X-RAY FLUORESCENCE SPECTROSCOPY
    • 现场电化学沉积和X射线荧光光谱
    • WO2014026931A1
    • 2014-02-20
    • PCT/EP2013/066755
    • 2013-08-09
    • ELEMENT SIX LIMITED
    • NEWTON, Mark EdwardMACPHERSON, Julie VictoriaMOLLART, Timothy Peter
    • G01N23/223G01N27/42G01N27/48G01N27/30G01N27/49
    • G01N27/42G01N23/223G01N27/27G01N27/30G01N27/305G01N27/308G01N27/38G01N27/48G01N27/49G01N2223/076
    • A sensor comprising: a first electrode formed of an electrically conductive material and configured to be located in contact which a solution to be analysed; a second electrode configured to be in electrical contact with the solution to be analysed; an electrical controller configured to apply a potential difference between the first and second electrodes to electro-deposit chemical species from the solution onto the first electrode, and an x-ray fluorescence spectrometer configured to perform an x-ray fluorescence spectroscopic analysis technique on the electro-deposited chemical species, the x-ray fluorescence spectrometer comprising an x-ray source configured to direct an x-ray excitation beam to the electro-deposited chemical species on the first electrode and an x-ray detector configured to receive x-rays emitted from the electro-deposited chemical species and generate spectroscopic data about the chemical species electro-deposited on the first electrode, wherein the sensor is configured such that in use the x-ray excitation beam incident on the electro-deposited chemical species on the first electrode is attenuated by no more than 60%.
    • 一种传感器,包括:由导电材料形成的第一电极,并且被配置为与要分析的溶液接触; 构造成与要分析的溶液电接触的第二电极; 电气控制器,被配置为施加所述第一和第二电极之间的电位差以将化学物质从所述溶液电沉积到所述第一电极上;以及x射线荧光光谱仪,被配置为对所述电极进行x射线荧光光谱分析技术 所述X射线荧光光谱仪包括被配置为将x射线激发光束引导到第一电极上的电沉积化学物质的x射线源,以及被配置为接收发射的x射线的x射线检测器 并且产生关于电沉积在第一电极上的化学物质的光谱数据,其中所述传感器被配置为使得在使用中入射到第一电极上的电沉积化学物质上的x射线激发光束 减毒不超过60%。
    • 39. 发明申请
    • THICK POLYCRYSTALLINE SYNTHETIC DIAMOND WAFERS FOR HEAT SPREADING APPLICATIONS AND MICROWAVE PLASMA CHEMICAL VAPOUR DEPOSITION SYNTHESIS TECHNIQUES
    • 用于热膨胀应用和微波等离子体化学蒸气沉积合成技术的厚晶体合成金刚石陶瓷
    • WO2014026930A1
    • 2014-02-20
    • PCT/EP2013/066753
    • 2013-08-09
    • ELEMENT SIX LIMITED
    • WILLIAMS, Gruffudd, TreforDODSON, Joseph, MichaelINGLIS, Paul, NicolasKELLY, Christopher, John
    • C30B25/10C30B29/04C23C16/27C01B31/06
    • H01S5/02484C01B32/25C23C16/274C23C16/511C23C16/52C30B25/105C30B25/16C30B25/18C30B29/04Y10T428/21Y10T428/24471
    • A method of fabricating a polycrystalline CVD synthetic diamond material having an average thermal conductivity at room temperature through a thickness of the polycrystalline CVD synthetic diamond material of at least 2000 Wm -1 K -1 , the method comprising: loading a refractory metal substrate into a CVD reactor; locating a refractory metal guard ring around a peripheral region of the refractory metal substrate, the refractory metal guard ring defining a gap between an edge of the refractory metal substrate and the refractory metal guard ring having a width 1.5 mm to 5.0 mm; introducing microwaves into the CVD reactor at a power such that the power density in terms of power per unit area of the refractory metal substrate is in a range 2.5 to 4.5 W mm -2 ; introducing process gas into the CVD reactor wherein the process gas within the CVD reactor comprises a nitrogen concentration in a range 600 ppb to 1500 ppb calculated as molecular nitrogen N 2 , a carbon containing gas concentration in a range.5% to 3.0% by volume,and a hydrogen concentration in a range 92% to 98.5% by volume; controlling an average temperature of the refractory metal substrate to lie in a range 750 o C to 950 o C and to maintain a temperature difference between an edge and a centre point on the refractory metal substrate of no more than 80 o C growing polycrystalline CVD synthetic diamond material to a thickness of at least 1.3 mm on the refractory metal substrate; and cooling the polycrystalline CVD synthetic diamond material to yield a polycrystalline CVD synthetic diamond material having a thickness of at least 1.3 mm, an average thermal conductivity at room temperature through the thickness of the polycrystalline CVD synthetic diamond material of at least 2000 Wm -1 K -1 over at least a central area of the polycrystalline CVD synthetic diamond material, wherein the central area is at least 70% of a total area of the polycrystalline CVD synthetic diamond material, a single substitutional nitrogen concentration no more than 0.80 ppm over at least the central area of the polycrystalline CVD synthetic diamond material,and wherein the polycrystalline CVD synthetic diamond material is substantially crack free over at least the central area thereof such that the central area has no cracks which intersect both external major faces of the polycrystalline CVD synthetic diamond material and extend greater than 2 mm in length.
    • 一种通过至少2000Wm-1K-1的多晶CVD合成金刚石材料的厚度在室温下制造具有平均热导率的多晶CVD合成金刚石材料的方法,所述方法包括:将难熔金属基底加载到CVD 反应堆; 将耐火金属保护环定位在难熔金属基底的周边区域周围,难熔金属保护环在难熔金属基底的边缘和宽度为1.5mm至5.0mm的耐火金属保护环之间形成间隙; 以这样的功率将微波引入CVD反应器中,使得以耐火金属基材的每单位面积的功率计算的功率密度在2.5至4.5Wmm -2的范围内; 将工艺气体引入CVD反应器中,其中CVD反应器内的工艺气体包含以分子氮N2计算的范围为600ppb至1500ppb的氮浓度,含碳气体浓度为5体积%至3.0体积% 和氢浓度在92%至98.5%的范围内; 将耐火金属基材的平均温度控制在750℃至950℃的范围内,并且将难熔金属基材上不超过80℃生长的多晶CVD合成金刚石材料的边缘和中心点之间的温度差保持为厚度 在难熔金属基材上至少为1.3mm; 并冷却所述多晶CVD合成金刚石材料以产生厚度至少为1.3mm的多晶CVD合成金刚石材料,通过所述多晶CVD合成金刚石材料的厚度至少为2000Wm-1K-1的室温下的平均热导率, 至少在多晶CVD合成金刚石材料的中心区域上,其中中心区域是多晶CVD合成金刚石材料的总面积的至少70%,单个取代氮浓度至少不超过0.80ppm 所述多晶CVD合成金刚石材料的中心区域,并且其中所述多晶CVD合成金刚石材料至少在其中心区域上基本上无裂纹,使得所述中心区域没有与所述多晶CVD合成金刚石材料的两个外表面相交的裂纹 并且长度大于2mm。