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21. 发明申请

WO2015021368A1 LI-ION BATTERY WITH ALUMINA COATED POROUS SILICON ANODE 审中-公开
标题翻译：铝离子电池与铝包覆多孔硅阳极
公开(公告)号：WO2015021368A1
公开(公告)日：2015-02-12
申请号：PCT/US2014/050321
申请日：2014-08-08
申请人： ROBERT BOSCH GMBH , SAMARAO, Ashwin, K. , O'BRIEN, Gary , FEYH, Ando
发明人： SAMARAO, Ashwin, K. , O'BRIEN, Gary , FEYH, Ando
IPC分类号： H01M4/38 , H01M10/0562 , H01M10/0525
CPC分类号： H01M4/366 , C23C16/045 , C23C16/403 , C23C16/45555 , C23C16/52 , H01M4/0428 , H01M4/134 , H01M4/382 , H01M4/386 , H01M10/0525 , H01M10/0562 , H01M10/058 , H01M2004/021 , H01M2220/20 , H01M2220/30 , H01M2300/0071 , H01M2300/0094 , Y02E60/122 , Y02T10/7011
摘要： A Li-ion battery in one embodiment includes a lithium based compound in a cathode, a first porous silicon portion in an anode, and a layer of atomic layer deposited (ALD) alumina coating the first porous silicon portion and contacting the cathode.
摘要翻译：一个实施方案中的锂离子电池包括阴极中的锂基化合物，阳极中的第一多孔硅部分和涂覆第一多孔硅部分并与阴极接触的原子层沉积（ALD）氧化物层。

22. 发明申请

WO2014189600A2 ANISOTROPIC CONDUCTOR AND METHOD OF FABRICATION THEREOF 审中-公开
标题翻译：各向异性导体及其制造方法
公开(公告)号：WO2014189600A2
公开(公告)日：2014-11-27
申请号：PCT/US2014/022175
申请日：2014-03-08
申请人： ROBERT BOSCH GMBH , FEYH, Ando , PURKL, Fabian , SAMARAO, Ashwin , YAMA, Gary , O'BRIEN, Gary
发明人： FEYH, Ando , PURKL, Fabian , SAMARAO, Ashwin , YAMA, Gary , O'BRIEN, Gary
IPC分类号： C23C28/00 , C23C16/455
CPC分类号： B81C1/00095 , B81B7/0006 , B82Y10/00 , B82Y30/00 , H01L21/02601 , H01L21/3142 , H01L45/146
摘要： An anisotropic conductor and a method of fabrication thereof. The anisotropic conductor includes an insulating matrix and a plurality of nanoparticles disposed therein. A first portion of the plurality of nanoparticles provides a conductor when subjected to a voltage and/or current pulse. A second portion of the plurality of the nanoparticles does not form a conductor when the voltage and or current pulse is applied to the first portion. The anisotropic conductor forms a conductive path between conductors of electronic devices, components, and systems, including microelectromechanical systems (MEMS) devices, components, and systems.
摘要翻译：各向异性导体及其制造方法。各向异性导体包括绝缘基体和设置在其中的多个纳米颗粒。多个纳米颗粒的第一部分在经受电压和/或电流脉冲时提供导体。当电压和/或电流脉冲施加到第一部分时，多个纳米颗粒的第二部分不形成导体。各向异性导体在电子器件，部件和系统的导体之间形成导电路径，包括微机电系统（MEMS）器件，部件和系统。

23. 发明申请

WO2014150093A1 TRENCH BASED CAPACITIVE HUMIDITY SENSOR 审中-公开
标题翻译：基于TRENCH的电容式湿度传感器
公开(公告)号：WO2014150093A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/022205
申请日：2014-03-09
申请人： ROBERT BOSCH GMBH , O'BRIEN, Gary , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , YAMA, Gary
发明人： O'BRIEN, Gary , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , YAMA, Gary
IPC分类号： G01N27/22
CPC分类号： G01N27/223 , B81B7/0006 , B81B2201/0292 , G01N27/225
摘要： A trenched base capacitive humidity sensor includes a plurality of trenches formed in a conductive layer, such as polysilicon or metal, on a substrate. The trenches are arranged parallel to the each other and partition the conductive layer into a plurality of trenched silicon electrodes. At least two trenched silicon electrodes are configured to form a capacitive humidity sensor. The trenches that define the trenched silicon electrodes can be filled partially ( e.g. , sidewall coverage) or completely with polyimide (PI) or silicon nitride (SiN). A polyimide layer may also be provided on the conductive layer over the trenches and trenched electrodes. The trenches and the trenched silicon electrodes may have different widths to enable different sensor characteristics in the same structure.
摘要翻译：沟底基电容式湿度传感器包括在基板上形成在诸如多晶硅或金属的导电层中的多个沟槽。沟槽彼此平行配置，并将导电层分隔成多个沟槽硅电极。至少两个沟槽硅电极被配置成形成电容式湿度传感器。限定沟槽硅电极的沟槽可以部分地（例如，侧壁覆盖）填充或完全用聚酰亚胺（PI）或氮化硅（SiN）填充。也可以在沟槽和沟槽电极上的导电层上设置聚酰亚胺层。沟槽和沟槽硅电极可以具有不同的宽度，以实现相同结构中不同的传感器特性。

24. 发明申请

WO2014070930A2 SURFACE CHARGE MITIGATION LAYER FOR MEMS SENSORS 审中-公开
标题翻译： MEMS传感器的表面电荷减缓层
公开(公告)号：WO2014070930A2
公开(公告)日：2014-05-08
申请号：PCT/US2013/067576
申请日：2013-10-30
申请人： ROBERT BOSCH GMBH , GRAHAM, Andrew , FEYH, Ando , O'BRIEN, Gary
发明人： GRAHAM, Andrew , FEYH, Ando , O'BRIEN, Gary
CPC分类号： B81B7/0064 , B81B2201/0264 , H01L29/72
摘要： A semiconductor device includes a substrate. At least one transducer is provided on the substrate. The at least one transducer includes at least one electrically conductive circuit element. A dielectric layer is deposited onto the substrate over the at least one transducer. A surface charge mitigation layer formed of a conductive material is deposited onto the outer surface of the dielectric layer with the surface charge mitigation layer being electrically coupled to ground potential. The surface charge mitigation layer may be deposited to a thickness of 10nm or less, and the transducer may comprise a microelectromechanical systems (MEMS) device, such as a MEMS pressure sensor. The surface charge mitigation layer may be patterned to include pores to enhance the flexibility as well as the optical properties of the mitigation layer.
摘要翻译：半导体器件包括衬底。在基板上设置至少一个换能器。至少一个换能器包括至少一个导电电路元件。介电层通过至少一个换能器沉积到衬底上。由导电材料形成的表面电荷缓解层沉积在电介质层的外表面上，其中表面电荷缓解层与地电位电耦合。表面电荷缓解层可以沉积到10nm或更小的厚度，并且换能器可以包括诸如MEMS压力传感器的微机电系统（MEMS）装置。表面电荷缓解层可以被图案化以包括孔，以增强缓解层的柔性以及光学特性。

25. 发明申请

WO2014055542A1 MEMS PRESSURE SENSOR ASSEMBLY 审中-公开
标题翻译： MEMS压力传感器总成
公开(公告)号：WO2014055542A1
公开(公告)日：2014-04-10
申请号：PCT/US2013/062901
申请日：2013-10-01
申请人： ROBERT BOSCH GMBH , FEYH, Ando, Lars , O'BRIEN, Gary
发明人： FEYH, Ando, Lars , O'BRIEN, Gary
IPC分类号： G01L9/00 , G01L19/00 , G01L19/14 , H01L23/52
CPC分类号： G01L19/148 , B81B2201/0264 , B81C1/00238 , B81C2203/0792 , G01L9/0073 , G01L19/0061
摘要： A pressure sensor assembly (100) includes a first die assembly (108), a second die assembly (124), and a conducting member. The first die assembly includes a MEMS pressure sensor. The second die assembly includes an ASIC configured to generate an electrical output corresponding to a pressure sensed by the MEMS pressure sensor. The conducting member is positioned between the first die assembly and the second die assembly and is configured and to electrically connect the MEMS pressure sensor to the ASIC.
摘要翻译：压力传感器组件（100）包括第一模具组件（108），第二模具组件（124）和导电构件。第一模具组件包括MEMS压力传感器。第二管芯组件包括被配置为产生对应于由MEMS压力传感器感测的压力的电输出的ASIC。导电构件定位在第一模具组件和第二模具组件之间，并且被配置并将MEMS压力传感器电连接到ASIC。

26. 发明申请

WO2014031570A1 SYSTEM AND METHOD FOR FORMING A BURIED LOWER ELECTRODE IN CONJUNCTION WITH AN ENCAPSULATED MEMS DEVICE 审中-公开
标题翻译：与封装的MEMS器件连接形成一个下部电极的系统和方法
公开(公告)号：WO2014031570A1
公开(公告)日：2014-02-27
申请号：PCT/US2013/055668
申请日：2013-08-20
申请人： ROBERT BOSCH GMBH , GRAHAM, Andrew, B. , FEYH, Ando , O'BRIEN, Gary
发明人： GRAHAM, Andrew, B. , FEYH, Ando , O'BRIEN, Gary
IPC分类号： B81B7/00
CPC分类号： B81B3/0021 , B81B7/007 , B81B2207/092 , B81B2207/095 , B81C1/00015
摘要： A system and method for forming a sensor device with a buried first electrode includes providing a first silicon portion with an electrode layer and a second silicon portion with a device layer. The first silicon portion and the second silicon portion are adjoined along a common oxide layer formed on the electrode layer of the first silicon portion and the device layer of the second silicon portion. The resulting multi-silicon stack includes a buried lower electrode that is further defined by a buried oxide layer, a highly-doped ion implanted region, or a combination thereof. The multi-silicon stack has a plurality of silicon layers and silicon dioxide layers with electrically isolated regions in each layer allowing for both the lower electrode and an upper electrode. The multi-silicon stack further includes a spacer that enables the lower electrode to be accessible from a topside of the sensor device.
摘要翻译：用于形成具有埋入的第一电极的传感器装置的系统和方法包括：提供具有电极层的第一硅部分和具有器件层的第二硅部分。第一硅部分和第二硅部分沿着形成在第一硅部分的电极层和第二硅部分的器件层上的公共氧化物层相邻。所得到的多硅堆叠包括掩埋下电极，其进一步由掩埋氧化物层，高度掺杂的离子注入区域或其组合限定。多硅堆叠具有多个硅层和在每个层中具有电隔离区域的二氧化硅层，允许下电极和上电极两者。多硅堆叠还包括使得下电极能够从传感器装置的顶侧接近的间隔件。

27. 发明申请

WO2013106791A1 PIEZOELECTRIC BASED MEMS STRUCTURE 审中-公开
标题翻译：基于压电的MEMS结构
公开(公告)号：WO2013106791A1
公开(公告)日：2013-07-18
申请号：PCT/US2013/021335
申请日：2013-01-12
申请人： ROBERT BOSCH GMBH , CHEN, Po-Jui , FEYH, Ando , O'BRIEN, Gary
发明人： CHEN, Po-Jui , FEYH, Ando , O'BRIEN, Gary
IPC分类号： H01L41/047 , H01L41/09 , H01L41/113
CPC分类号： H01L41/096 , G01L1/16 , H01L41/047 , H01L41/094 , H01L41/1132 , Y10T29/42
摘要： In one embodiment, a method of deforming a MEMS structure includes providing a base layer (102), providing a first piezoelectric slab (106, 108, 110, 112) operably connected to a surface of the base layer (102), determining a desired deformation of the base layer, applying a first potential to a first electrode operably connected to the first piezoelectric slab, applying a second potential to a second electrode operably connected to the first piezoelectric slab (106, 108, 110, 112), and deforming the base layer (102) with the first piezoelectric slab (106, 108, 110, 112) using the applied first potential and the applied second potential based upon the determined desired deformation.
摘要翻译：在一个实施例中，使MEMS结构变形的方法包括提供基层（102），提供可操作地连接到基层（102）的表面的第一压电板（106,108,110,112），确定期望的基底层的变形，向可操作地连接到第一压电板的第一电极施加第一电位，向可操作地连接到第一压电板（106,108,110,112）的第二电极施加第二电位，并使基础层（102）与第一压电板（106,108,110,112）一起使用所施加的第一电位和施加的第二电位，基于所确定的期望变形。

28. 发明申请

WO2012142400A1 METHOD OF FORMING MEMBRANES WITH MODIFIED STRESS CHARACTERISTICS 审中-公开
标题翻译：具有改性应力特征的膜的形成方法
公开(公告)号：WO2012142400A1
公开(公告)日：2012-10-18
申请号：PCT/US2012/033501
申请日：2012-04-13
申请人： ROBERT BOSCH GMBH , GRAHAM, Andrew, B. , YAMA, Gary , O'BRIEN, Gary
发明人： GRAHAM, Andrew, B. , YAMA, Gary , O'BRIEN, Gary
IPC分类号： B81B3/00 , B81C1/00 , G01L9/00
CPC分类号： B81B3/0072 , B81B2201/0264 , B81C1/00666 , G01L9/0042
摘要： A method of modifying stress characteristics of a membrane in one embodiment includes providing a membrane layer, determining a desired stress modification, and forming at least one trough in the membrane layer based upon the determined desired stress modification.
摘要翻译：在一个实施方案中，改进膜的应力特性的方法包括提供膜层，确定所需的应力改性，以及基于确定的所需应力改变在膜层中形成至少一个槽。

29. 发明申请

WO2012141854A1 MEMS PACKAGE OR SENSOR PACKAGE WITH INTRA-CAP ELECTRICAL VIA AND METHOD THEREOF 审中-公开
标题翻译：具有内部电气的MEMS封装或传感器封装及其方法
公开(公告)号：WO2012141854A1
公开(公告)日：2012-10-18
申请号：PCT/US2012/029862
申请日：2012-03-21
申请人： ROBERT BOSCH GMBH , GRAHAM, Andrew, B. , YAMA, Gary , O'BRIEN, Gary
发明人： GRAHAM, Andrew, B. , YAMA, Gary , O'BRIEN, Gary
IPC分类号： B81B7/00
CPC分类号： B81B7/007 , B81B2207/092 , B81B2207/095
摘要： A MEMS device structure including a lateral electrical via encased in a cap layer and a method for manufacturing the same. The MEMS device structure includes a cap layer positioned on a MEMS device layer. The cap layer covers a MEMS device and one or more MEMS device layer electrodes in the MEMS device layer. The cap layer includes at least one cap layer electrode accessible from the surface of the cap layer. An electrical via is encased in the cap layer extending across a lateral distance from the cap layer electrode to the one or more MEMS device layer electrodes. An isolating layer is positioned around the electrical via to electrically isolate the electrical via from the cap layer.
摘要翻译：包括封装在盖层中的横向电通路的MEMS器件结构及其制造方法。 MEMS器件结构包括位于MEMS器件层上的盖层。盖层覆盖MEMS器件和MEMS器件层中的一个或多个MEMS器件层电极。盖层包括可从盖层的表面接近的至少一个盖层电极。电通孔被封装在覆盖层中，该覆盖层跨越从帽层电极到一个或多个MEMS器件层电极的横向距离延伸。绝缘层位于电通孔周围，以将电通孔与盖层电隔离。

30. 发明申请

WO2016109434A1 NANOSTRUCTURED LANTHANUM OXIDE HUMIDITY SENSOR 审中-公开
标题翻译：纳米氧化铝氧化物湿度传感器
公开(公告)号：WO2016109434A1
公开(公告)日：2016-07-07
申请号：PCT/US2015/067685
申请日：2015-12-28
申请人： ROBERT BOSCH GMBH , SAMARAO, Ashwin, K. , O'BRIEN, Gary , FEYH, Ando
发明人： SAMARAO, Ashwin, K. , O'BRIEN, Gary , FEYH, Ando
IPC分类号： G01N27/12 , G01N27/07 , G01N27/14
CPC分类号： G01N27/121 , C01F17/0043 , G01N27/07 , G01N27/127 , G01N27/14
摘要： A thin film gas sensor device includes a substrate, a nanostructured thin film layer, and a first and a second electrode. The nanostructured thin film layer is supported by the substrate and is formed with a semi-conductor material including holes. The semiconductor material is configured to undergo an increase in a density of the holes in the presence of a target gas, thereby decreasing an electrical resistance of the nanostructured thin film layer. The first and the second electrodes are supported by the substrate and are operably connected to the nanostructured thin film layer, such that the decrease in electrical resistance can be detected.
摘要翻译：薄膜气体传感器装置包括基板，纳米结构薄膜层以及第一和第二电极。纳米结构薄膜层由衬底支撑并且形成有包括孔的半导体材料。半导体材料被配置为在目标气体的存在下经历孔的密度增加，从而降低纳米结构薄膜层的电阻。第一和第二电极由衬底支撑并且可操作地连接到纳米结构化薄膜层，使得可以检测电阻的降低。

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