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11. 发明申请

WO2013062203A1 박막 벌크 음향 공진기 및 박막 벌크 음향 공진기의 제조방법 审中-公开
标题翻译：薄膜泡沫声谐振器及其制造方法
公开(公告)号：WO2013062203A1
公开(公告)日：2013-05-02
申请号：PCT/KR2012/004466
申请日：2012-06-07
申请人： 삼성전자주식회사 , 이문철 , 송인상 , 김덕환 , 김철수 , 손상욱 , 신제식 , 박호수 , 추이징
发明人： 이문철 , 송인상 , 김덕환 , 김철수 , 손상욱 , 신제식 , 박호수 , 추이징
IPC分类号： H03H9/17 , H03H3/007
CPC分类号： H03H9/173 , H01L41/297 , H01L41/312 , H01L41/332 , H03H3/02 , H03H9/175 , H03H2003/021
摘要： 박막 벌크 음향 공진기에 관한 것으로서, 박막 벌크 음향 공진기는 제1 전극, 제2 전극 및 상기 제1 전극과 상기 제2 전극 사이에 위치하여, 상기 제1 전극과 상기 제2 전극에 인가되는 신호에 따라 음향파(acoustic wave)를 생성하는 압전층을 포함하는 음향 공진부, 상기 음향 공진부의 하부에 위치하고, 기판의 상부에 위치하여, 상기 음향파를 반사시키는 에어 갭(Air Gap) 및 상기 에어 갭의 양면에 위치하며, 상기 에어 갭과 동일한 갭을 가지고, 상기 에어 갭의 생성에 사용되는 희생층과 동일한 공정에서 형성되는 앵커(Anchor)를 포함한다.
摘要翻译：本发明涉及一种薄膜体声波谐振器。薄膜体声波谐振器包括：声谐振器，包括第一电极，第二电极和设置在第一电极和第二电极之间的压电层，以根据施加到第一和第二电极的信号产生声波; 气隙，设置在声谐振器下方和衬底上方以反射声波; 以及锚定件，其设置在气隙的两个表面的每一个上，并且具有与气隙相同的间隙，并且通过与用于产生气隙的牺牲层的形成过程相同的过程形成。

12. 发明申请

WO2011061402A1 BULK ACOUSTIC WAVE RESONATOR AND METHOD OF MANUFACTURING THEREOF 审中-公开
标题翻译：大容量声波谐波器及其制造方法
公开(公告)号：WO2011061402A1
公开(公告)日：2011-05-26
申请号：PCT/FI2010/050935
申请日：2010-11-19
申请人： VALTION TEKNILLINEN TUTKIMUSKESKUS , VTI TECHNOLOGIES OY , JAAKKOLA, Antti , KUISMA, Heikki
发明人： JAAKKOLA, Antti , KUISMA, Heikki
IPC分类号： H03H9/02 , H03H9/15 , H03H3/04 , H03H3/007 , H01P7/06
CPC分类号： H01P11/008 , H01P7/082 , H03H3/0076 , H03H9/172 , H03H9/2436 , H03H2009/0233 , H03H2009/241 , H03H2009/2442
摘要： The invention concerns a novel bulk acoustic wave (BAW) resonator design and method of manufacturing thereof. The bulk acoustic wave resonator comprises a resonator portion, which is provided with at least one void having the form of a trench which forms a continuous closed path on the resonator portion. By manufacturing the void in the same processing step as the outer dimensions of the resonator portion, the effect of processing variations on the resonant frequency of the resonator can be reduced. By means of the invention, the accuracy of BAW resonators can be increased.
摘要翻译：本发明涉及一种新颖的体声波（BAW）谐振器设计及其制造方法。体声波谐振器包括谐振器部分，该谐振器部分设置有至少一个具有在谐振器部分上形成连续闭合路径的沟槽形式的空隙。通过在与谐振器部分的外部尺寸相同的处理步骤中制造空隙，可以减小对谐振器的谐振频率的处理变化的影响。通过本发明，可以提高BAW谐振器的精度。

13. 发明申请

WO2010114602A1 INTEGRATION OF PIEZOELECTRIC MATERIALS WITH SUBSTRATES 审中-公开
标题翻译：压电材料与衬底的集成
公开(公告)号：WO2010114602A1
公开(公告)日：2010-10-07
申请号：PCT/US2010/000955
申请日：2010-03-31
申请人： SAND9, INC. , CHEN, David, M. , KUYPERS, Jan, H. , GAIDARZHY, Alexei , ZOLFAGHARKHANI, Guiti
发明人： CHEN, David, M. , KUYPERS, Jan, H. , GAIDARZHY, Alexei , ZOLFAGHARKHANI, Guiti
IPC分类号： H03H3/007 , H03H9/02
CPC分类号： H03H3/007 , H03H9/02007 , H03H9/02244 , H03H9/02535
摘要： Devices having piezoelectric material structure (10) 2 integrated with substrates (104) are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer(204) to a substrate (208) of a differing material. A structure, such as a resonator (202), may then be formed from the piezoelectric material wafer (204).
摘要翻译：描述了与衬底（104）集成的压电材料结构（10）2的器件。还描述了用于形成这种装置的制造技术。该制造可以包括将压电材料晶片（204）接合到不同材料的衬底（208）。然后可以由压电材料晶片（204）形成诸如谐振器（202）的结构。

14. 发明申请

WO2010048725A1 SELF-MATCHED BAND REJECT FILTER 审中-公开
标题翻译：自匹配带拒绝滤波器
公开(公告)号：WO2010048725A1
公开(公告)日：2010-05-06
申请号：PCT/CA2009/001564
申请日：2009-11-02
申请人： NORTEL NETWORKS LIMITED , JIAN, Chun-Yun
发明人： JIAN, Chun-Yun
IPC分类号： H03H3/007 , H03H9/46 , H03H9/64 , H04W88/08 , H04L25/03 , H04W88/02
CPC分类号： H04B1/50 , H03H9/542 , H03H9/547 , H03H9/6409 , H04B1/48 , H04L25/0278 , Y10T29/4902
摘要： The present application describes a radio frequency band reject filter including an input port, an output port, a plurality of acoustic resonators and an inductor for matching the impedance of the plurality of acoustic resonators. The inductor is positioned within the band reject filter in respect of the plurality of acoustic resonators such that a static capacitance between the input port and the inductor is substantially equivalent to a static capacitance between the output port and the inductor. The plurality of acoustic resonators may be a plurality of parallel resonators, a plurality of series resonators or a combination of series and parallel resonators. The radio frequency band reject filter is fabricated using any of surface acoustic wave (SAW) technology, thin film bulk acoustic resonator (FBAR) technology, and bulk acoustic wave (BAW) technology.
摘要翻译：本申请描述了一种包括输入端口，输出端口，多个声谐振器和用于匹配多个声谐振器的阻抗的电感器的无线电频带滤波器滤波器。电感器相对于多个声谐振器位于带阻滤波器内，使得输入端口和电感器之间的静态电容基本上等于输出端口和电感器之间的静态电容。多个声谐振器可以是多个并联谐振器，多个串联谐振器或串联和并联谐振器的组合。使用表面声波（SAW）技术，薄膜体声波谐振器（FBAR）技术和体声波（BAW）技术中的任一种制造无线电频带滤波器。

15. 发明申请

WO2009079188A9 MEMS RESONATOR STRUCTURE AND METHOD FOR USE IN ASSOCIATION WITH THE RESONATOR STRUCTURE 审中-公开
公开(公告)号：WO2009079188A9
公开(公告)日：2009-06-25
申请号：PCT/US2008/084946
申请日：2008-11-26
申请人： ROBERT BOSCH GmbH , LUTZ, Markus , PAN, Zhiyu , PARTRIDGE, Aaron
发明人： LUTZ, Markus , PAN, Zhiyu , PARTRIDGE, Aaron
IPC分类号： H03H3/007 , H03H9/02 , B81B3/00
摘要： A microelectromechanical resonator may include one or more resonator masses that oscillates in a bulk mode and that includes a first plurality of regions each having a density, and a second plurality of regions each having a density, the density of each of the second plurality of regions differing from the density of each of the first plurality of regions. The second plurality of regions may be disposed in a non-uniform arrangement. The oscillation may include a first state in which the resonator mass is contracted, at least in part, in a first and/or a second direction, and expanded, at least in part, in a third and/or a fourth direction, the second direction being opposite the first direction, the fourth direction being opposite the third direction.

16. 发明申请

WO2008044182A2 RESONATOR 审中-公开
标题翻译：谐振器
公开(公告)号：WO2008044182A2
公开(公告)日：2008-04-17
申请号：PCT/IB2007/054071
申请日：2007-10-05
申请人： NXP B.V. , NGUYEN HOANG, Viet , GRAVESTEIJN, Dirk , SURDEANU, Radu
发明人： NGUYEN HOANG, Viet , GRAVESTEIJN, Dirk , SURDEANU, Radu
IPC分类号： H03H3/007 , H03H9/24
CPC分类号： H03H9/2405 , H03H3/0072 , H03H2009/02496
摘要： A method of making a resonator, preferably a nano-resonator, includes starting with a FINFET structure with a central bar, first and second electrodes connected to the central bar, and third and fourth electrodes on either side of the central bar and separated from the central bar by gate dielectric. The structure is formed on a buried oxide layer. The gate dielectric and buried oxide layer are then selectively etched away to provide a nano-resonator structure with a resonator element 30, a pair of resonator electrodes (32,34), a control electrode (36) and a sensing electrode (38).
摘要翻译：一种制造谐振器，优选纳米谐振器的方法包括从具有中心棒的FINFET结构开始，连接到中心棒的第一和第二电极，以及中心棒的任一侧上的第三和第四电极，并与中心杆通过栅极电介质。该结构形成在掩埋氧化物层上。然后选择性地蚀刻掉栅介电层和掩埋氧化物层，以提供具有谐振元件30，一对谐振器电极（32,34），控制电极（36）和感测电极（38）的纳米谐振器结构。

17. 发明申请

WO2007072409A3 A MEMS RESONATOR, A METHOD OF MANUFACTURING THEREOF, AND A MEMS OSCILLATOR 审中-公开
标题翻译： MEMS谐振器，其制造方法和MEMS振荡器
公开(公告)号：WO2007072409A3
公开(公告)日：2007-10-18
申请号：PCT/IB2006054931
申请日：2006-12-18
申请人： NXP BV , VAN BEEK JOZEF T M , LOEBL HANS-PETER , VANHELMONT FREDERIK W M
发明人： VAN BEEK JOZEF T M , LOEBL HANS-PETER , VANHELMONT FREDERIK W M
IPC分类号： H03H9/02 , H03H3/007 , H03H9/24
CPC分类号： H03H9/02448 , H03H3/0072 , H03H9/2447 , H03H2009/02496 , Y10T29/42
摘要： The invention relates to a MEMS resonator comprising a movable element (48), the movable element (48) comprising a first part (A) having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and the movable element (48) further comprising a second part (B) having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient, at least, at operating conditions of the MEMS resonator, and a cross-sectional area of the first part (A) and the cross-sectional area of the second part (B) being such that the absolute temperature coefficient of the Young's modulus of the first part (A) multiplied by the cross-sectional area of the first part (A) does not deviate more than 20% from the absolute temperature coefficient of the Young's modulus of the second part (B) multiplied by the cross-sectional area of the second part (B), the cross-sectional areas being measured locally and perpendicularly to the movable element (48).
摘要翻译：本发明涉及一种包括可移动元件（48）的MEMS谐振器，所述可移动元件（48）包括具有第一杨氏模量和第一杨氏模量的第一温度系数的第一部分（A）和可移动元件（48））还包括具有第二杨氏模量和第二杨氏模量的第二温度系数的第二部分（B），所述第二温度系数的符号与所述第一温度系数的符号相反，至少在所述MEMS谐振器以及所述第一部分（A）的横截面面积和所述第二部分（B）的横截面面积使得所述第一部分（A）的杨氏模量的绝对温度系数乘以第一部分（A）的横截面面积与第二部分（B）的杨氏模量的绝对温度系数乘以第二部分（B）的横截面积不相差大于20％横截面面积被局部地和垂直于可移动元件（48）测量。

18. 发明申请

WO2007072409A2 A MEMS RESONATOR, A METHOD OF MANUFACTURING THEREOF, AND A MEMS OSCILLATOR 审中-公开
标题翻译： MEMS谐振器，其制造方法以及MEMS振荡器
公开(公告)号：WO2007072409A2
公开(公告)日：2007-06-28
申请号：PCT/IB2006/054931
申请日：2006-12-18
申请人： NXP B.V. , VAN BEEK, Jozef, T., M. , LOEBL, Hans-Peter , VANHELMONT, Frederik, W., M.
发明人： VAN BEEK, Jozef, T., M. , LOEBL, Hans-Peter , VANHELMONT, Frederik, W., M.
IPC分类号： H03H9/02 , H03H3/007
CPC分类号： H03H9/02448 , H03H3/0072 , H03H9/2447 , H03H2009/02496 , Y10T29/42
摘要： The invention relates to a MEMS resonator comprising a movable element (48), the movable element (48) comprising a first part (A) having a first Young's modulus and a first temperature coefficient of the first Young's modulus, and the movable element (48) further comprising a second part (B) having a second Young's modulus and a second temperature coefficient of the second Young's modulus, a sign of the second temperature coefficient being opposite to a sign of the first temperature coefficient, at least, at operating conditions of the MEMS resonator, and a cross-sectional area of the first part (A) and the cross-sectional area of the second part (B) being such that the absolute temperature coefficient of the Young's modulus of the first part (A) multiplied by the cross-sectional area of the first part (A) does not deviate more than 20% from the absolute temperature coefficient of the Young's modulus of the second part (B) multiplied by the cross-sectional area of the second part (B), the cross-sectional areas being measured locally and perpendicularly to the movable element (48).
摘要翻译：本发明涉及一种包括可移动元件（48）的MEMS谐振器，可移动元件（48）包括具有第一杨氏模量和第一杨氏模量的第一温度系数的第一部分（A）并且所述可移动元件（48）还包括具有第二杨氏模量和第二杨氏模量的第二温度系数的第二部分（B），所述第二温度系数的符号与所述第一温度系数的符号相反至少在MEMS谐振器的操作条件下，第一部分（A）的横截面积和第二部分（B）的横截面积使得杨氏模量的绝对温度系数第一部分（A）乘以第一部分（A）的横截面积与第二部分（B）的杨氏模量的绝对温度系数乘以横截面积的偏差不超过20％的秒（B），所述横截面积局部地且垂直于所述可移动元件（48）测量。

19. 发明申请

WO2005074502A2 HIGH-Q MICROMECHANICAL RESONATOR DEVICES AND FILTERS UTILIZING SAME 审中-公开
标题翻译：高Q微机电共振器和使用其的过滤器
公开(公告)号：WO2005074502A2
公开(公告)日：2005-08-18
申请号：PCT/US2005002076
申请日：2005-01-21
申请人： UNIV MICHIGAN , NGUYEN CLARK T C , LI SHENG-SHIAN
发明人： NGUYEN CLARK T C , LI SHENG-SHIAN
IPC分类号： H03H3/007 , H03H9/02 , H03H9/24 , H03H9/46 , H03H9/50 , H03H9/54
CPC分类号： H03H9/505 , H03H3/0072 , H03H9/02338 , H03H9/2431 , H03H9/462 , H03H2009/02496 , H03H2009/02503
摘要： High-Q micromechanical resonator devices and filters utilizing same are provided. The devices and filters include a vibrating polysilicon micromechanical "hollow-disk" ring resonators obtained by removing quadrants of material from solid disk resonators, but purposely leaving intact beams or spokes of material with quarter-wavelength dimensions to non-intrusively support the resonators. The use of notched support attachments closer to actual extensional ring nodal points further raises the Q. Vibrating micromechanical hollow-disk ring filters including mechanically coupled resonators with resonator Q's greater than 10,000 achieve filter Q's on the order of thousands via a low-velocity coupling scheme. A longitudinally mechanical spring is utilized to attach the notched-type, low-velocity coupling locations of the resonators in order to achieve a extremely narrow passband.
摘要翻译：提供了使用其的高Q微机械谐振器装置和滤波器。器件和滤波器包括通过从固体盘谐振器去除象限的材料获得的振动多晶硅微机械“中空盘”环形谐振器，但有意地留下具有四分之一波长尺寸的完整的梁或辐条以非侵入式地支撑谐振器。使用更接近实际延伸环节点的切口支撑附件进一步提高了Q.振动微机械中空盘环形滤波器，包括谐振器Q大于10,000的机械耦合谐振器，通过低速耦合方案实现了数千级的滤波器Q 。使用纵向机械弹簧来连接谐振器的缺口型低速耦合位置，以便实现非常窄的通带。

20. 发明申请

WO03028212A3 MICROBRIDGE STRUCTURES FOR ULTRA-HIGH FREQUENCY MEM RESONATOR 审中-公开
标题翻译：超高频液相共振器的微结构
公开(公告)号：WO03028212A3
公开(公告)日：2003-05-15
申请号：PCT/US0231157
申请日：2002-09-27
申请人： INTEL CORP
发明人： CHENG PENG , MA QING
IPC分类号： B81B3/00 , H03H3/007 , H03H9/24 , H03H3/013
CPC分类号： B81B3/0078 , B81B2201/016 , B81B2203/019 , H03H3/0077 , H03H9/2463
摘要： A micro-electromechanical (MEM) resonator is described that includes a substrate, a microbridge beam structure coupled to the substrate and at least one electrode disposed adjacent to the microbridge beam structure to induce vibration of the beam. The microbridge beam structure includes support sections and a beam formed between the support sections. The center region of the beam has a mass that is less than the mass of regions of the beam adjacent to the support sections.
摘要翻译：描述了一种微机电（MEM）谐振器，其包括衬底，耦合到衬底的微桥梁结构和邻近微桥梁结构设置的至少一个电极以引起梁的振动。微桥梁结构包括支撑部分和形成在支撑部分之间的梁。梁的中心区域的质量小于与支撑部分相邻的梁的区域的质量。

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