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    • 11. 发明申请
    • LATERALLY CONTACTED BLUE LED WITH SUPERLATTICE CURRENT SPREADING LAYER
    • 具有超级电流扩展层的横向接触蓝光LED
    • WO2013009394A1
    • 2013-01-17
    • PCT/US2012/039208
    • 2012-05-23
    • BRIDGELUX, INC.CHEN, ZhenFENWICK, WilliamLESTER, Steve
    • CHEN, ZhenFENWICK, WilliamLESTER, Steve
    • H01L33/04H01L33/32H01L33/14
    • H01L33/04H01L33/14H01L33/32
    • A laterally contacted blue LED device involves a PAN structure disposed over an insulating substrate. The substrate may be a sapphire substrate that has a template layer of GaN grown on it. The PAN structure includes an re¬ type GaN layer, a light-emitting active layer involving indium, and a p-type GaN layer. The n-type GaN layer has a thickness of at least 500nm. A Low Resistance Layer (LRL) is disposed between the substrate and the PAN structure such that the LRL is in contact with the bottom of the n- layer. In one example, the LRL is an AlGaN/GaN superlattice structure whose sheet resistance is lower than the sheet resistance of the n-type GnA layer. The LRL reduces current crowding by conducting current laterally under the n-type GaN layer. The LRL reduces defect density by preventing dislocation threads in the underlying GaN template from extending up into the PAN structure.
    • 横向接触的蓝色LED装置涉及设置在绝缘基板上的PAN结构。 衬底可以是具有在其上生长的GaN的模板层的蓝宝石衬底。 PAN结构包括RE型GaN层,包含铟的发光活性层和p型GaN层。 n型GaN层的厚度为500nm以上。 在基板和PAN结构之间设置低电阻层(LRL),使得LRL与n层的底部接触。 在一个示例中,LRL是其薄层电阻低于n型GnA层的薄层电阻的AlGaN / GaN超晶格结构。 LRL通过在n型GaN层下面横向导电来减少电流拥挤。 LRL通过防止下层GaN模板中的位错螺纹向上延伸到PAN结构中来降低缺陷密度。