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1. 发明申请

WO2013049417A3 LIGHT EMITTING DEVICES HAVING DISLOCATION DENSITY MAINTAINING BUFFER LAYERS 审中-公开
标题翻译：具有位错密度的发光器件维护缓冲层
公开(公告)号：WO2013049417A3
公开(公告)日：2013-07-11
申请号：PCT/US2012057664
申请日：2012-09-27
申请人： BRIDGELUX INC , YANG LONG , FENWICK WILLIAM
发明人： YANG LONG , FENWICK WILLIAM
IPC分类号： H01L33/12
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/0025 , H01L33/025 , H01L33/12 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a light emitting device comprises forming a buffer layer having a plurality of layers comprising a substrate, an aluminum gallium nitride layer adjacent to the substrate, and a gallium nitride layer adjacent to the aluminum gallium nitride layer. During the formation of each of the plurality of layers, one or more process parameters are selected such that an individual layer of the plurality of layers is strained.
摘要翻译：一种形成发光器件的方法包括形成具有多个层的缓冲层，所述多个层包括衬底，与衬底相邻的氮化铝镓层和与氮化铝镓层相邻的氮化镓层。在形成多个层中的每一个的过程中，选择一个或多个工艺参数，使得多个层中的单独层被拉紧。

2. 发明申请

WO2013009394A1 LATERALLY CONTACTED BLUE LED WITH SUPERLATTICE CURRENT SPREADING LAYER 审中-公开
标题翻译：具有超级电流扩展层的横向接触蓝光LED
公开(公告)号：WO2013009394A1
公开(公告)日：2013-01-17
申请号：PCT/US2012/039208
申请日：2012-05-23
申请人： BRIDGELUX, INC. , CHEN, Zhen , FENWICK, William , LESTER, Steve
发明人： CHEN, Zhen , FENWICK, William , LESTER, Steve
IPC分类号： H01L33/04 , H01L33/32 , H01L33/14
CPC分类号： H01L33/04 , H01L33/14 , H01L33/32
摘要： A laterally contacted blue LED device involves a PAN structure disposed over an insulating substrate. The substrate may be a sapphire substrate that has a template layer of GaN grown on it. The PAN structure includes an re¬ type GaN layer, a light-emitting active layer involving indium, and a p-type GaN layer. The n-type GaN layer has a thickness of at least 500nm. A Low Resistance Layer (LRL) is disposed between the substrate and the PAN structure such that the LRL is in contact with the bottom of the n- layer. In one example, the LRL is an AlGaN/GaN superlattice structure whose sheet resistance is lower than the sheet resistance of the n-type GnA layer. The LRL reduces current crowding by conducting current laterally under the n-type GaN layer. The LRL reduces defect density by preventing dislocation threads in the underlying GaN template from extending up into the PAN structure.
摘要翻译：横向接触的蓝色LED装置涉及设置在绝缘基板上的PAN结构。衬底可以是具有在其上生长的GaN的模板层的蓝宝石衬底。 PAN结构包括RE型GaN层，包含铟的发光活性层和p型GaN层。 n型GaN层的厚度为500nm以上。在基板和PAN结构之间设置低电阻层（LRL），使得LRL与n层的底部接触。在一个示例中，LRL是其薄层电阻低于n型GnA层的薄层电阻的AlGaN / GaN超晶格结构。 LRL通过在n型GaN层下面横向导电来减少电流拥挤。 LRL通过防止下层GaN模板中的位错螺纹向上延伸到PAN结构中来降低缺陷密度。

3. 发明申请

WO2013049417A2 LIGHT EMITTING DEVICES HAVING DISLOCATION DENSITY MAINTAINING BUFFER LAYERS 审中-公开
标题翻译：具有分散密度的发光装置维护缓冲层
公开(公告)号：WO2013049417A2
公开(公告)日：2013-04-04
申请号：PCT/US2012/057664
申请日：2012-09-27
申请人： BRIDGELUX, INC. , YANG, Long , FENWICK, William
发明人： YANG, Long , FENWICK, William
CPC分类号： H01L33/007 , H01L21/02381 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/0262 , H01L33/0025 , H01L33/025 , H01L33/12 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a light emitting device comprises forming a buffer layer having a plurality of layers comprising a substrate, an aluminum gallium nitride layer adjacent to the substrate, and a gallium nitride layer adjacent to the aluminum gallium nitride layer. During the formation of each of the plurality of layers, one or more process parameters are selected such that an individual layer of the plurality of layers is strained.
摘要翻译：一种形成发光器件的方法包括形成具有多个层的缓冲层，所述多个层包括衬底，与衬底相邻的氮化铝镓层和与氮化镓铝层相邻的氮化镓层。在形成多个层中的每一层期间，选择一个或多个工艺参数使得多个层中的单个层变得紧张。

4. 发明申请

WO2013019316A3 A BORON-CONTAINING BUFFER LAYER FOR GROWING GALLIUM NITRIDE ON SILICON 审中-公开
标题翻译：一个含硼的缓冲层，用于在硅上生长氮化镓
公开(公告)号：WO2013019316A3
公开(公告)日：2013-09-06
申请号：PCT/US2012041726
申请日：2012-06-08
申请人： TOSHIBA TECHNO CT INC , FENWICK WILLIAM E
发明人： FENWICK WILLIAM E
IPC分类号： H01L33/12 , H01L33/32
CPC分类号： H01L29/267 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A silicon wafer used in manufacturing GaN for LEDs includes a silicon substrate, a buffer layer of boron aluminum nitride (BxAli_xN) and an upper layer of GaN, for which 0.35
摘要翻译：用于制造LED的GaN的硅晶片包括硅衬底，氮化硼氮化物缓冲层（BxAli_xN）和上层GaN，其中0.35 <= x <= 0.45。 BAIN形成纤锌矿型晶体，其单元长度约为Si（111）表面上硅单元长度的三分之二。 BAIN晶体的C平面对于每两个铝原子具有约一个原子的硼。在整个晶片中，基本上只有BAIN的氮原子与Si（111）表面形成键合，并且在BAIN原子的最底层平面上基本上不存在BAIN的铝或硼原子。制备BAIN缓冲层的方法包括在流动三甲基铝和三乙基硼之前，预先流过流过室的氢的量小于0.01体积％的第一量的氨，然后通过该室预先排出一定数量的氨。

5. 发明申请

WO2013015894A3 NUCLEATION OF ALUMINUM NITRIDE ON A SILICON SUBSTRATE USING AN AMMONIA PREFLOW 审中-公开
标题翻译：氮化铝在硅衬底上的氨氮预聚合作用
公开(公告)号：WO2013015894A3
公开(公告)日：2013-04-04
申请号：PCT/US2012041779
申请日：2012-06-09
申请人： BRIDGELUX INC , FENWICK WILLIAM E , RAMER JEFF
发明人： FENWICK WILLIAM E , RAMER JEFF
IPC分类号： H01L21/318 , H01L21/20 , H01L33/00
CPC分类号： C30B25/183 , C30B25/10 , C30B25/14 , C30B25/186 , C30B29/406 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L33/0066 , H01L33/0075
摘要： A silicon wafer used in manufacturing crystalline GaN for light emitting diodes (LEDs) includes a silicon substrate, a buffer layer of aluminum nitride (A1N) and an upper layer of GaN. The silicon wafer has a diameter of at least 200 millimeters and an Si (111) 1xl surface. The A1N buffer layer overlies the Si (111) surface. The GaN upper layer is disposed above the buffer layer. Across the entire wafer substantially no aluminum atoms of the A1N are present in a bottom most plane of atoms of the A1N, and across the entire wafer substantially only nitrogen atoms of the A1N are present in the bottom most plane of atoms of the A1N. A method of making the A1N buffer layer includes preflowing a first amount of ammonia equaling less than 0.01% by volume of hydrogen flowing through a chamber before flowing trimethylaluminum and then a subsequent amount of ammonia through the chamber.
摘要翻译：用于制造用于发光二极管（LED）的晶体GaN的硅晶片包括硅衬底，氮化铝（AlN）的缓冲层和GaN的上层。硅晶片具有至少200毫米的直径和Si（111）1×1表面。 AlN缓冲层覆盖Si（111）表面。 GaN上层设置在缓冲层上方。在整个晶片上，基本上没有AlN的铝原子存在于AlN的原子的最底部平面中，并且在整个晶片上基本上仅有AlN的氮原子存在于AlN的原子的最底部平面中。制造AlN缓冲层的方法包括在流动三甲基铝之前预先流过等于小于0.01体积％的流过腔室的氢气的第一量的氨，然后流过腔室中的随后量的氨。

6. 发明申请

WO2013019316A2 A BORON-CONTAINING BUFFER LAYER FOR GROWING GALLIUM NITRIDE ON SILICON 审中-公开
标题翻译：一个含硼的缓冲层，用于在硅上生长氮化镓
公开(公告)号：WO2013019316A2
公开(公告)日：2013-02-07
申请号：PCT/US2012/041726
申请日：2012-06-08
申请人： BRIDGELUX, INC. , FENWICK, William, E.
发明人： FENWICK, William, E.
CPC分类号： H01L29/267 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A silicon wafer used in manufacturing GaN for LEDs includes a silicon substrate, a buffer layer of boron aluminum nitride (BxAli_xN) and an upper layer of GaN, for which 0.35≤x≤0.45. The BAIN forms a wurtzite-type crystal with a cell unit length about two-thirds of a silicon cell unit length on a Si (111) surface. The C- plane of the BAIN crystal has approximately one atom of boron for each two atoms of aluminum. Across the entire wafer substantially only nitrogen atoms of BAIN form bonds to the Si (111) surface, and substantially no aluminum or boron atoms of the BAIN are present in a bottom-most plane of atoms of the BAIN. A method of making the BAIN buffer layer includes preflowing a first amount of ammonia equaling less than 0.01% by volume of hydrogen flowing through a chamber before flowing trimethylaluminum and triethylboron and then a subsequent amount of ammonia through the chamber.
摘要翻译：用于制造LED的GaN的硅晶片包括硅衬底，氮化硼氮化物缓冲层（BxAli_xN）和上层GaN，其中0.35 = x = 0.45。 BAIN形成纤锌矿型晶体，其单元长度约为Si（111）表面上硅单元长度的三分之二。 BAIN晶体的C平面对于每两个铝原子具有约一个原子的硼。在整个晶片中，基本上只有BAIN的氮原子与Si（111）表面形成键合，并且在BAIN原子的最底层平面上基本上不存在BAIN的铝或硼原子。制备BAIN缓冲层的方法包括在流动三甲基铝和三乙基硼之前，预先流过流过室的氢的量小于0.01体积％的第一量的氨，然后通过该室预先排出一定数量的氨。

7. 发明申请

WO2013015894A2 NUCLEATION OF ALUMINUM NITRIDE ON A SILICON SUBSTRATE USING AN AMMONIA PREFLOW 审中-公开
标题翻译：使用氨基酸前体的硅基底层上的氮化铝的核化
公开(公告)号：WO2013015894A2
公开(公告)日：2013-01-31
申请号：PCT/US2012/041779
申请日：2012-06-09
申请人： BRIDGELUX, INC. , FENWICK, William, E. , RAMER, Jeff
发明人： FENWICK, William, E. , RAMER, Jeff
IPC分类号： H01L21/318 , H01L21/20 , H01L33/00
CPC分类号： C30B25/183 , C30B25/10 , C30B25/14 , C30B25/186 , C30B29/406 , H01L21/02381 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L33/0066 , H01L33/0075
摘要： A silicon wafer used in manufacturing crystalline GaN for light emitting diodes (LEDs) includes a silicon substrate, a buffer layer of aluminum nitride (A1N) and an upper layer of GaN. The silicon wafer has a diameter of at least 200 millimeters and an Si (111) 1xl surface. The A1N buffer layer overlies the Si (111) surface. The GaN upper layer is disposed above the buffer layer. Across the entire wafer substantially no aluminum atoms of the A1N are present in a bottom most plane of atoms of the A1N, and across the entire wafer substantially only nitrogen atoms of the A1N are present in the bottom most plane of atoms of the A1N. A method of making the A1N buffer layer includes preflowing a first amount of ammonia equaling less than 0.01% by volume of hydrogen flowing through a chamber before flowing trimethylaluminum and then a subsequent amount of ammonia through the chamber.
摘要翻译：用于制造用于发光二极管（LED）的结晶GaN的硅晶片包括硅衬底，氮化铝缓冲层（A1N）和GaN上层。硅晶片的直径至少为200毫米，Si（111）1x1表面。 A1N缓冲层覆盖Si（111）表面。 GaN上层设置在缓冲层的上方。在整个晶片上，A1N的原子基本上没有铝原子存在于A1N原子的最底层平面上，并且在整个晶片上基本上只有A1N的氮原子存在于AlN的最底部原子平面中。制造A1N缓冲层的方法包括在流动三甲基铝之前预先流过等于小于体积的体积为氢氧化物的氢的第一量的氨，然后通过该室流出随后的量的氨。

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