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11. 发明申请

WO2010071785A3 PLASMA CONFINEMENT STRUCTURES IN PLASMA PROCESSING SYSTEMS 审中-公开
标题翻译：等离子体处理系统中的等离子体约束结构
公开(公告)号：WO2010071785A3
公开(公告)日：2010-10-14
申请号：PCT/US2009068195
申请日：2009-12-16
申请人： LAM RES CORP , HUDSON ERIC , FISCHER ANDREAS
发明人： HUDSON ERIC , FISCHER ANDREAS
IPC分类号： H05H1/24 , H05H1/34
CPC分类号： C23C16/00 , C23F1/00 , H01J37/32082 , H01J37/32623
摘要： A movable plasma confinement structure configured for confining plasma in a plasma processing chamber during plasma processing of a substrate is provided. The movable plasma confinement structure includes a movable plasma-facing structure configured to surround the plasma. The movable plasma confinement structure also includes a movable electrically conductive structure disposed outside of the movable plasma-facing structure and configured to be deployed and retracted with the movable plasma-facing structure as a single unit to facilitate handling of the substrate. The movable electrically conductive structure is radio frequency (RF) grounded during the plasma processing. The movable plasma-facing structure is disposed between the plasma and the movable electrically conductive structure during the plasma processing such that RF current from the plasma flows to the movable electrically conductive structure through the movable plasma-facing structure during the plasma processing.
摘要翻译：提供了一种可移动的等离子体约束结构，其被配置用于在等离子体处理基板期间将等离子体限制在等离子体处理室中。可移动的等离子体约束结构包括构造成围绕等离子体的可移动的面向等离子体的结构。可移动的等离子体约束结构还包括可移动的导电结构，该可移动的导电结构布置在可移动的面向等离子体的结构的外部并且被配置为与可移动的面向等离子体的结构一起作为单个单元展开和缩回以便于处理基板。可移动导电结构在等离子体处理期间是射频（RF）接地。在等离子体处理期间，可移动的面向等离子体的结构设置在等离子体和可移动的导电结构之间，使得来自等离子体的RF电流在等离子体处理期间通过可移动的面向等离子体的结构流向可移动的导电结构。

12. 发明申请

WO2010080420A2 METHODS AND APPARATUS FOR DUAL CONFINEMENT AND ULTRA-HIGH PRESSURE IN AN ADJUSTABLE GAP PLASMA CHAMBER 审中-公开
标题翻译：用于可调间隙等离子室中的双重约束和超高压力的方法和装置
公开(公告)号：WO2010080420A2
公开(公告)日：2010-07-15
申请号：PCT/US2009068183
申请日：2009-12-16
申请人： LAM RES CORP , FISCHER ANDREAS , HUDSON ERIC
发明人： FISCHER ANDREAS , HUDSON ERIC
IPC分类号： H05H1/34
CPC分类号： H01J37/32091 , H01J37/32449 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32623 , H01J37/32642 , H01J37/32816 , H01J37/3299 , H01L21/3065
摘要： A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap.
摘要翻译：提供了一种等离子体处理系统，具有配置用于处理基板的等离子体处理室。等离子体处理系统至少包括用于处理基板的上电极和下电极。在等离子体处理期间，衬底布置在下电极上，其中上电极和衬底形成第一间隙。等离子体处理系统还包括上电极外围扩展（UE-PE）。 UE-PE机械耦合到上电极的外围，其中UE-PE被配置为与上电极不共面。等离子体处理系统还包括盖环。覆盖环配置成同心地围绕下电极，其中UE-PE和覆盖环形成第二间隙。

13. 发明申请

WO2009139828A3 DETECTION OF ARCING EVENTS IN WAFER PLASMA PROCESSING THROUGH MONITORING OF TRACE GAS CONCENTRATIONS 审中-公开
标题翻译：通过监测跟踪气体浓度来检测水平等离子体处理中的ARCING事件
公开(公告)号：WO2009139828A3
公开(公告)日：2010-01-21
申请号：PCT/US2009002726
申请日：2009-05-04
申请人： LAM RES CORP , HUDSON ERIC
发明人： HUDSON ERIC
IPC分类号： H01L21/3065 , H01L21/203 , H01L21/205 , H01L21/66
CPC分类号： H01J37/32972 , H01J37/32935
摘要： A method of detecting substrate arcing in a semiconductor plasma processing apparatus is provided. A substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. Process gas is introduced into the reaction chamber. A plasma is generated from the process gas and the substrate is processed with the plasma. Intensities of real-time spectrometry signals of selected gas species produced in the reaction chamber during plasma processing are monitored. The selected gas species are generated by a substrate arcing event. The arcing event is detected when the intensities are above a threshold value.
摘要翻译：提供了一种在半导体等离子体处理装置中检测基板电弧的方法。将基板放置在等离子体处理装置的反应室中的基板支撑件上。将工艺气体引入反应室。从处理气体产生等离子体，并用等离子体处理衬底。监测在等离子体处理期间在反应室中产生的选定气体种类的实时光谱信号的强度。所选择的气体种类通过基板电弧事件产生。当强度高于阈值时，检测到电弧事件。

14. 发明申请

WO2010080421A2 CONTROLLING ION ENERGY DISTRIBUTION IN PLASMA PROCESSING SYSTEMS 审中-公开
标题翻译：控制离子能量分布在等离子体处理系统中
公开(公告)号：WO2010080421A2
公开(公告)日：2010-07-15
申请号：PCT/US2009068186
申请日：2009-12-16
申请人： LAM RES CORP , FISCHER ANDREAS , HUDSON ERIC
发明人： FISCHER ANDREAS , HUDSON ERIC
IPC分类号： H05H1/36 , H01L21/3065
CPC分类号： H01J37/32623 , H01J37/32091
摘要： A plasma processing system for processing at least a substrate with plasma. The plasma processing chamber is capable of controlling ion energy distribution. The plasma processing system may include a first electrode. The plasma processing system also includes a second electrode that is different from the first electrode and is configured for bearing the substrate. The plasma processing system may also include a signal source coupled with the first electrode. The signal source may provide a non-sinusoidal signal through the first electrode to control ion energy distribution at the substrate when the substrate is processed in the plasma processing system, wherein the non-sinusoidal signal is periodic.
摘要翻译：一种等离子体处理系统，用于至少用等离子体处理衬底。等离子体处理室能够控制离子能量分布。等离子体处理系统可以包括第一电极。等离子体处理系统还包括与第一电极不同的第二电极，并且构造成用于承载衬底。等离子体处理系统还可以包括与第一电极耦合的信号源。当在等离子体处理系统中处理衬底时，信号源可以通过第一电极提供非正弦信号以控制衬底处的离子能量分布，其中非正弦信号是周期性的。

15. 发明申请

WO2007001838B1 METHODS AND APPARATUS FOR IGNITING A LOW PRESSURE PLASMA 审中-公开
标题翻译：用于点燃低压等离子体的方法和装置
公开(公告)号：WO2007001838B1
公开(公告)日：2008-09-04
申请号：PCT/US2006023042
申请日：2006-06-13
申请人： LAM RES CORP , HUDSON ERIC , MARAKHTANOV ALEXEI
发明人： HUDSON ERIC , MARAKHTANOV ALEXEI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32009 , H01J37/321
摘要： In a plasma processing system having a plasma processing chamber, at least one powered electrode and an ignition electrode, a method for igniting a plasma is disclosed. The method includes introducing a substrate into the plasma processing chamber. The method also includes flowing a gas mixture into the plasma processing chamber; energizing the ignition electrode at a strike frequency; and striking a plasma from the gas mixture with the ignition electrode. The method further includes energizing the at least one powered electrode with a target frequency, wherein the strike frequency is greater than the target frequency; and de-energizing the ignition electrode while processing the substrate in the plasma processing chamber.
摘要翻译：在具有等离子体处理室，至少一个供电电极和点火电极的等离子体处理系统中，公开了一种用于点燃等离子体的方法。该方法包括将衬底引入等离子体处理室。该方法还包括使气体混合物流入等离子体处理室; 以点火频率激发点火电极; 并用点火电极从气体混合物中冲击等离子体。该方法还包括以目标频率激励至少一个动力电极，其中击发频率大于目标频率; 并且在处理等离子体处理室中的衬底时使点火电极断电。

16. 发明申请

WO2007149694A3 APPARATUSES, SYSTEMS AND METHODS FOR RAPID CLEANING OF PLASMA CONFINEMENT RINGS WITH MINIMAL EROSION OF OTHER CHAMBER PARTS 审中-公开
标题翻译：用于其他室内部件的最小侵蚀的等离子体配合环的快速清洁的装置，系统和方法
公开(公告)号：WO2007149694A3
公开(公告)日：2008-03-20
申请号：PCT/US2007070265
申请日：2007-06-01
申请人： LAM RES CORP , HUDSON ERIC , FISCHER ANDREAS
发明人： HUDSON ERIC , FISCHER ANDREAS
IPC分类号： C23C16/00
CPC分类号： H01J37/32862 , B08B7/0035 , H01J37/32009 , H01J37/32091 , H01J37/321 , H01J37/32596
摘要： An apparatus used for rapid removal of polymer films from plasma confinement rings while minimizing erosion of other plasma etch chamber components is disclosed. The apparatus includes a center assembly, an electrode plate, a confinement ring stack, a first plasma source, and a second plasma source. The electrode plate is affixed to a surface of the center assembly with a channel defined along the external circumference therein. A first plasma source is disposed within the channel and along the external circumference of the center assembly, wherein the first plasma source is configured to direct a plasma to the inner circumferential surface of the confinement ring stack. A second plasma source located away from the first plasma source is configured to perform processing operations on a substrate within the etch chamber.
摘要翻译：公开了一种用于从等离子体限制环快速除去聚合物膜同时最小化其它等离子体蚀刻室部件的侵蚀的装置。该装置包括中心组件，电极板，约束环叠层，第一等离子体源和第二等离子体源。电极板被固定到中心组件的表面，其中沿着外圆周限定了通道。第一等离子体源设置在通道内并且沿着中心组件的外圆周，其中第一等离子体源被配置为将等离子体引导到限制环堆叠的内圆周表面。位于远离第一等离子体源的第二等离子体源被配置为在蚀刻室内的衬底上执行处理操作。

17. 发明申请

WO2007145801A2 METHOD AND APPARATUS TO DETECT FAULT CONDITIONS OF A PLASMA PROCESSING REACTOR 审中-公开
标题翻译：检测等离子体加工反应器的故障条件的方法和装置
公开(公告)号：WO2007145801A2
公开(公告)日：2007-12-21
申请号：PCT/US2007012581
申请日：2007-05-25
申请人： LAM RES CORP , KEIL DOUGLAS , HUDSON ERIC , KIMBALL CHRIS , FISCHER ANDREAS
发明人： KEIL DOUGLAS , HUDSON ERIC , KIMBALL CHRIS , FISCHER ANDREAS
IPC分类号： C23C14/00
CPC分类号： C23C16/52 , C23C16/509 , H01J37/32935 , H01J37/3299
摘要： A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber and analyzing the resulting information. Such analysis enables detection of failures and the diagnosis of failure modes in a plasma processing reactor during the course of wafer processing. The method comprises measuring the plasma parameters as a function of time and analyzing the resulting data. The data can be observed, characterized, compared with reference data, digitized, processed, or analyzed in any way to reveal a specific fault. Monitoring can be done with a detector such as a probe, which is preferably maintained within the plasma chamber substantively coplanar with a surface within the chamber, and directly measures net ion flux and other plasma parameters. The detector is preferably positioned at a grounded surface within the reactor such as a grounded showerhead electrode, and can be of a planar ion flux probe (PIF) type or a non-capacitive type. Chamber faults that can be detected include a build-up of process by-products in the process chamber, a helium leak, a match re-tuning event, a poor stabilization rate, and a loss of plasma confinement. If the detector is a probe, the probe can be embedded in a part of a plasma processing chamber and can comprises one or more gas feed-through holes.
摘要翻译：提供了一种用于等离子体处理室的故障检测方法。该方法包括监测等离子体室内的等离子体参数并分析所得到的信息。这样的分析使得能够在晶片处理过程中检测等离子体处理反应器中的故障和故障模式的诊断。该方法包括测量作为时间的函数的等离子体参数并分析所得到的数据。数据可以观察，表征，与参考数据进行比较，数字化，处理或分析，以显示特定故障。可以用诸如探针的检测器进行监测，该探针优选地保持在与腔室内的表面基本上共面的等离子体室内，并且直接测量净离子通量和其它等离子体参数。检测器优选地位于反应器内的接地表面，例如接地喷头电极，并且可以是平面离子通量探针（PIF）型或非电容型。可以检测到的室内故障包括处理室中的过程副产物的积聚，氦泄漏，匹配重新调谐事件，差的稳定化速率和等离子体约束的损失。如果检测器是探针，则探针可以嵌入在等离子体处理室的一部分中，并且可以包括一个或多个气体馈通孔。

18. 发明申请

WO2007005210A2 APPARATUS FOR MEASURING A SET OF ELECTRICAL CHARACTERISTICS IN A PLASMA 审中-公开
标题翻译：用于测量等离子体中一组电特性的装置
公开(公告)号：WO2007005210A2
公开(公告)日：2007-01-11
申请号：PCT/US2006023027
申请日：2006-06-13
申请人： LAM RES CORP , KIMBALL CHRISTOPHER , HUDSON ERIC , KEIL DOUGLAS , MARAKHTANOV ALEXEI
发明人： KIMBALL CHRISTOPHER , HUDSON ERIC , KEIL DOUGLAS , MARAKHTANOV ALEXEI
IPC分类号： C02F1/00
CPC分类号： H01J37/32431 , H01J37/32935 , H05H1/0081 , Y10T29/49002
摘要： A probe apparatus configured to measure a set of electrical characteristics in a plasma processing chamber, the plasma processing chamber including a set of plasma chamber surfaces configured to be exposed to a plasma is disclosed.The probe apparatus includes a collection disk structure configured to be exposed to the plasma, whereby the collection disk structure is coplanar with at least one of the set of plasma chamber surfaces. The probe apparatus also includes a conductive path configured to transmit the set of electrical characteristics from the collection disk structure to a set of transducers, wherein the set of electrical characteristics is generated by an ion flux of the plasma. The probe apparatus further includes an insulation barrier configured to substantially electrically separate the collection disk and the conductive path from the set of plasma chamber surfaces.
摘要翻译：探针装置被配置为测量等离子体处理室中的一组电特性，所述等离子体处理室包括一组等离子体室表面，所述一组等离子体室表面被配置为暴露于等离子体。探针装置包括收集盘结构，由此收集盘结构与该组等离子体室表面中的至少一个共面。所述探针装置还包括导电路径，所述导电路径被配置为将所述一组电特性从所述收集盘结构传送到一组换能器，其中所述一组电特性由所述等离子体的离子通量产生。探针装置还包括绝缘屏障，该绝缘屏障被配置为将收集盘和导电路径基本上与等离子体室表面集合电分离。

19. 发明申请

WO2004038788A2 METHOD AND APPARATUS FOR DETECTING ENDPOINT DURING PLASMA ETCHING OF THIN FILMS 审中-公开
标题翻译：检测薄膜等离子蚀刻中端点的方法和装置
公开(公告)号：WO2004038788A2
公开(公告)日：2004-05-06
申请号：PCT/US0333706
申请日：2003-10-22
申请人： LAM RES CORP , MCMILLIN BRIAN K , HUDSON ERIC , MARKS JEFFREY
发明人： MCMILLIN BRIAN K , HUDSON ERIC , MARKS JEFFREY
IPC分类号： H01L21/311 , H01L21/66 , H01L21/768
CPC分类号： H01L21/76829 , H01J37/32963 , H01L21/31116 , H01L21/31138 , H01L21/76801 , H01L21/76807 , H01L22/26
摘要： A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. Method includes etching through first layer and at least partially through end-point generating layer while monitoring an absorption rate of a light beam traversing an interior portion of the plasma processing chamber, wherein the end-point generating layer is selected from material that produces a detectable change in absorption rate when etched. The end-point generating layer is characterized by at least one of a first characteristic and a second characteristic. The first characteristic is an insufficient thickness to function as an etch stop layer, and the second characteristic is an insufficient selectivity to etchants employed to etch through the first layer to function as the etch stop layer. The method additionally includes generating an end-point signal upon detecting the detectable change.
摘要翻译：公开了一种用于控制等离子体蚀刻工艺同时蚀刻具有设置在终点产生层上方的第一层的叠层的方法。方法包括蚀刻穿过第一层并且至少部分地通过端点产生层，同时监测穿过等离子体处理室的内部部分的光束的吸收率，其中终点产生层选自产生可检测蚀刻时吸收率的变化。终点产生层的特征在于第一特征和第二特征中的至少一个。第一特征是厚度不足以用作蚀刻停止层，并且第二特征是对蚀刻穿过第一层以用作蚀刻停止层的蚀刻剂的选择性不足。该方法还包括在检测到可检测到的变化时生成终点信号。

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