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11. 发明申请

WO02092505A3 NANOTUBE ARRAY AND METHOD FOR PRODUCING A NANOTUBE ARRAY 审中-公开
标题翻译：碳纳米管安排和方法制造纳米管安排
公开(公告)号：WO02092505A3
公开(公告)日：2003-02-27
申请号：PCT/EP0205433
申请日：2002-05-16
申请人： INFINEON TECHNOLOGIES AG , GRAHAM ANDREW , HOFMANN FRANZ , KRETZ JOHANNES , KREUPL FRANZ , LUYKEN RICHARD JOHANNES , ROESNER WOLFGANG
发明人： GRAHAM ANDREW , HOFMANN FRANZ , KRETZ JOHANNES , KREUPL FRANZ , LUYKEN RICHARD JOHANNES , ROESNER WOLFGANG
IPC分类号： B82B3/00 , C01B31/02 , G01N27/12 , G11C13/02 , H01L29/06 , H01L51/00 , H01L51/30 , H01L21/3205
CPC分类号： H01L51/0048 , B82Y10/00 , C01B32/05 , G01N27/127 , G11C13/025 , H01L51/0595
摘要： The invention relates to a nanotube array, comprising a substrate, a catalyst layer having one or more partial areas on the surface of the substrate and at least one nanotube parallel to the surface of the substrate on the surface of the catalyst layer. The nanotube array also has an electrically insulating layer between the substrate and the nanotubes and a topography such that the end segments of the at least one nanotube rest on the electrically insulating layer while its central segment rests freely. The invention also relates to a method for the production of said nanotube array.
摘要翻译：本发明涉及一种纳米管装置，其包括催化剂层布置的纳米管的表面上的衬底，包括一个或多个子区域的催化剂层，在衬底的表面上和至少一个平行于衬底的表面上。纳米管组件还包括基板，并且具有使得所述至少一个纳米管搁在其端部上的电绝缘层上，并在其中间部分露出的形貌纳米管之间的电绝缘层。本发明还涉及一种用于制造纳米管阵列。

12. 发明申请

WO2011159583A4 COMPOSITION OF MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS 审中-公开
标题翻译：具有电阻切换层的存储器单元的组成
公开(公告)号：WO2011159583A4
公开(公告)日：2012-08-02
申请号：PCT/US2011040105
申请日：2011-06-10
申请人： SANDISK 3D LLC , KREUPL FRANZ , BANDYOPADHYAY ABHIJIT , CHEN YUNG-TIN , FU CHU-CHEN , JAYASEKARA WIPUL PEMSIRI , KAI JAMES , MAKALA RAGHUVEER S , RABKIN PETER , SAMACHISA GEORGE , ZHANG JINGYAN
发明人： KREUPL FRANZ , BANDYOPADHYAY ABHIJIT , CHEN YUNG-TIN , FU CHU-CHEN , JAYASEKARA WIPUL PEMSIRI , KAI JAMES , MAKALA RAGHUVEER S , RABKIN PETER , SAMACHISA GEORGE , ZHANG JINGYAN
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.
摘要翻译：三维读写存储器中的存储器件包括存储器单元。每个存储单元包括与转向元件串联的电阻切换存储元件（RSME）。 RSME在导电中间层的任一侧具有第一和第二电阻转换层，并且在RSME的任一端具有第一和第二电极。第一和第二电阻切换层都可以具有双极性或单极性切换特性。在存储器单元的置位或复位操作中，离子电流在电阻切换层中流动，从而有助于切换机制。由于导电中间层的散射，对开关机构没有贡献的电子流被减少，以避免损坏导向元件。提供了用于RSME的不同层的特定材料和材料的组合。

13. 发明申请

WO2011159581A3 MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS 审中-公开
标题翻译：具有电阻切换层的存储单元
公开(公告)号：WO2011159581A3
公开(公告)日：2012-04-19
申请号：PCT/US2011040103
申请日：2011-06-10
申请人： SANDISK 3D LLC , KREUPL FRANZ , COSTA XIYING , KAI JAMES , MAKALA RAGHUVEER S
发明人： KREUPL FRANZ , COSTA XIYING , KAI JAMES , MAKALA RAGHUVEER S
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an electric field is applied across the first and second electrodes. An ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.
摘要翻译： 3-D读写存储器中的存储器件包括存储器单元。每个存储单元包括与转向元件串联的电阻切换存储元件（RSME）。 RSME在导电中间层的任一侧上具有第一和第二电阻切换层，在RSME的任一端具有第一和第二电极。第一和第二电阻切换层都可以具有双极或单极开关特性。在存储单元的置位或复位操作中，跨越第一和第二电极施加电场。离子电流在电阻切换层中流动，有助于切换机构。由于导电中间层的散射，对切换机构无贡献的电子流减少，以避免损坏转向元件。提供了用于RSME不同层的材料和材料的组合。

14. 发明申请

WO2011084334A2 CARBON/TUNNELING-BARRIER/CARBON DIODE 审中-公开
标题翻译：碳/沟道屏障/碳二极管
公开(公告)号：WO2011084334A2
公开(公告)日：2011-07-14
申请号：PCT/US2010059555
申请日：2010-12-08
申请人： SANDISK 3D LLC , BANDYOPADHYAY ABHIJIT , KREUPL FRANZ , MIHNEA ANDREI , LI XIAO
发明人： BANDYOPADHYAY ABHIJIT , KREUPL FRANZ , MIHNEA ANDREI , LI XIAO
IPC分类号： H01L45/00
CPC分类号： H01L45/00 , H01L27/2418 , H01L27/2463 , H01L29/16 , H01L29/88
摘要： A carbon/tunneling-barrier/carbon diode and method for forming the same are disclosed. The carbon/tunneling-barrier/carbon may be used as a steering element in a memory array. Each memory cell in the memory array may include a reversible resistivity-switching element and a carbon/tunneling- barrier/carbon diode as the steering element. The tunneling-barrier may include a semiconductor or an insulator. Thus, the diode may be a carbon/semiconductor/carbon diode. The semiconductor in the diode may be intrinsic or doped. The semiconductor may be depleted when the diode is under equilibrium conditions. For example, the semiconductor may be lightly doped such that the depletion region extends from one end of the semiconductor region to the other end. The diode may be a carbon/insulator/carbon diode.
摘要翻译：披露了一种碳/隧道势垒/碳二极管及其形成方法。碳/隧道势垒/碳可以用作存储器阵列中的操纵元件。存储器阵列中的每个存储器单元可以包括作为操纵元件的可逆电阻率切换元件和碳/隧穿势垒/碳二极管。隧道势垒可以包括半导体或绝缘体。因此，二极管可以是碳/半导体/碳二极管。二极管中的半导体可以是本征或掺杂的。当二极管处于平衡条件下时，半导体可能会耗尽。例如，可以轻掺杂半导体，使得耗尽区从半导体区域的一端延伸到另一端。二极管可以是碳/绝缘体/碳二极管。

15. 发明申请

WO2011159582A4 MEMORY CELL WITH RESISTANCE- SWITCHING LAYERS AND LATERAL ARRANGEMENT 审中-公开
标题翻译：具有电阻切换层和横向布置的存储单元
公开(公告)号：WO2011159582A4
公开(公告)日：2012-08-23
申请号：PCT/US2011040104
申请日：2011-06-10
申请人： SANDISK 3D LLC , KREUPL FRANZ , SHRIVASTAVA RITU
发明人： KREUPL FRANZ , SHRIVASTAVA RITU
IPC分类号： H01L45/00
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME). The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The layers can be provided in a lateral arrangement, such as an end-to-end, face-to-face, L-shaped or U-shaped arrangement. In a set or reset operation of the memory cell, an electric field is applied across the first and second electrodes. An ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element.
摘要翻译： 3-D读写存储器中的存储器件包括存储器单元。每个存储单元包括电阻切换存储元件（RSME）。 RSME在导电中间层的任一侧上具有第一和第二电阻切换层，在RSME的任一端具有第一和第二电极。这些层可以以诸如端对端，面对面，L形或U形布置的横向布置来设置。在存储单元的置位或复位操作中，跨越第一和第二电极施加电场。离子电流在电阻切换层中流动，有助于切换机构。由于导电中间层的散射，对切换机构无贡献的电子流减少，以避免损坏转向元件。

16. 发明申请

WO2011159582A3 MEMORY CELL WITH RESISTANCE- SWITCHING LAYERS AND LATERAL ARRANGEMENT 审中-公开
标题翻译：具有电阻开关层和横向布置的存储器单元
公开(公告)号：WO2011159582A3
公开(公告)日：2012-07-05
申请号：PCT/US2011040104
申请日：2011-06-10
申请人： SANDISK 3D LLC , KREUPL FRANZ , SHRIVASTAVA RITU
发明人： KREUPL FRANZ , SHRIVASTAVA RITU
IPC分类号： H01L45/00
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME). The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The layers can be provided in a lateral arrangement, such as an end-to-end, face-to-face, L-shaped or U-shaped arrangement. In a set or reset operation of the memory cell, an electric field is applied across the first and second electrodes. An ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element.
摘要翻译：三维读写存储器中的存储器件包括存储器单元。每个存储器单元包括电阻切换存储器元件（RSME）。 RSME在导电中间层的任一侧具有第一和第二电阻转换层，并且在RSME的任一端具有第一和第二电极。这些层可以以横向布置提供，例如端对端，面对面，L形或U形布置。在存储单元的置位或复位操作中，在第一和第二电极上施加电场。离子电流在电阻切换层中流动，有助于切换机制。由于导电中间层的散射，对开关机构没有贡献的电子流被减少，以避免损坏导向元件。

17. 发明申请

WO2011159583A3 COMPOSITION OF MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS 审中-公开
标题翻译：具有电阻切换层的记忆体组成
公开(公告)号：WO2011159583A3
公开(公告)日：2012-06-14
申请号：PCT/US2011040105
申请日：2011-06-10
申请人： SANDISK 3D LLC , KREUPL FRANZ , BANDYOPADHYAY ABHIJIT , CHEN YUNG-TIN , FU CHU-CHEN , JAYASEKARA WIPUL PEMSIRI , KAI JAMES , MAKALA RAGHUVEER S , RABKIN PETER , SAMACHISA GEORGE , ZHANG JINGYAN
发明人： KREUPL FRANZ , BANDYOPADHYAY ABHIJIT , CHEN YUNG-TIN , FU CHU-CHEN , JAYASEKARA WIPUL PEMSIRI , KAI JAMES , MAKALA RAGHUVEER S , RABKIN PETER , SAMACHISA GEORGE , ZHANG JINGYAN
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has first and second resistance-switching layers on either side of a conductive intermediate layer, and first and second electrodes at either end of the RSME. The first and second resistance-switching layers can both have a bipolar or unipolar switching characteristic. In a set or reset operation of the memory cell, an ionic current flows in the resistance-switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.
摘要翻译： 3-D读写存储器中的存储器件包括存储器单元。每个存储单元包括与转向元件串联的电阻切换存储元件（RSME）。 RSME在导电中间层的任一侧上具有第一和第二电阻切换层，在RSME的任一端具有第一和第二电极。第一和第二电阻切换层都可以具有双极或单极开关特性。在存储单元的置位或复位操作中，离子电流在电阻切换层中流动，有助于切换机构。由于导电中间层的散射，对切换机构无贡献的电子流减少，以避免损坏转向元件。提供了用于RSME不同层的材料和材料的组合。

18. 发明申请

WO2011106155A3 MEMORY CELL WITH SILICON-CONTAINING CARBON SWITCHING LAYER AND METHODS FOR FORMING THE SAME 审中-公开
标题翻译：含有碳的碳交换层的存储单元及其形成方法
公开(公告)号：WO2011106155A3
公开(公告)日：2011-11-03
申请号：PCT/US2011024162
申请日：2011-02-09
申请人： SANDISK 3D LLC , KREUPL FRANZ , ZHANG JINGYAN , XU HUIWEN
发明人： KREUPL FRANZ , ZHANG JINGYAN , XU HUIWEN
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L45/149 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/1616 , H01L45/1625 , H01L45/165 , H01L45/1675
摘要： A method of forming a memory cell is provided that includes forming a metal - insulator-metal (MIM) stack (27), the MIM stack including (a) a first conductive carbon layer (35); (b) a low-hydrogen, silicon - containing carbon layer (12) above the first conductive carbon layer; and (c) a second conductive carbon layer (37) above the low-hydrogen, silicon - containing carbon layer; and forming a steering element (14) coupled to the MIM stack.
摘要翻译：提供一种形成存储单元的方法，包括形成金属绝缘体金属（MIM）堆叠（MIM）堆叠（MIM），所述MIM堆叠包括（a）第一导电碳层（35）; （b）在第一导电碳层之上的低氢含硅碳层（12）; 和（c）低于含氢的碳层之上的第二导电碳层（37）; 以及形成耦合到所述MIM堆叠的转向元件（14）。

19. 发明申请

WO2011159584A4 MEMORY CELL WITH RESISTANCE-SWITCHING LAYERS INCLUDING BREAKDOWN LAYER 审中-公开
标题翻译：具有电阻切换层的存储单元，包括断层
公开(公告)号：WO2011159584A4
公开(公告)日：2012-03-22
申请号：PCT/US2011040107
申请日：2011-06-10
申请人： SANDISK 3D LLC , KREUPL FRANZ , FU CHU-CHEN , NIAN YIBO
发明人： KREUPL FRANZ , FU CHU-CHEN , NIAN YIBO
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L27/2409 , G11C11/16 , G11C11/1659 , G11C13/0007 , G11C2213/31 , G11C2213/71 , G11C2213/72 , H01L27/2481 , H01L45/08 , H01L45/122 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/146
摘要： A memory device in a 3-D read and write memory includes memory cells. Each memory cell includes a resistance-switching memory element (RSME) in series with a steering element. The RSME has a resistance-switching layer, a conductive intermediate layer, and first and second electrodes at either end of the RSME. A breakdown layer is electrically between, and in series with, the second electrode and the intermediate layer. The breakdown layer maintains a resistance of at least about 1-10 ?O while in a conductive state. In a set or reset operation of the memory cell, an ionic current flows in the resistance- switching layers, contributing to a switching mechanism. An electron flow, which does not contribute to the switching mechanism, is reduced due to scattering by the conductive intermediate layer, to avoid damage to the steering element. Particular materials and combinations of materials for the different layers of the RSME are provided.
摘要翻译： 3-D读写存储器中的存储器件包括存储器单元。每个存储单元包括与转向元件串联的电阻切换存储元件（RSME）。 RSME具有电阻切换层，导电中间层以及在RSME的任一端的第一和第二电极。击穿层在第二电极和中间层之间电连接并与其串联。在导通状态下，击穿层保持至少约1-10Ω的电阻。在存储单元的置位或复位操作中，离子电流在电阻切换层中流动，有助于切换机制。由于导电中间层的散射，对切换机构无贡献的电子流减少，以避免损坏转向元件。提供了用于RSME不同层的材料和材料的组合。

20. 发明申请

WO2011106329A4 STRUCTURE AND FABRICATION METHOD FOR RESISTANCE-CHANGE MEMORY CELL IN 3-D MEMORY 审中-公开
标题翻译：三维记忆电阻变化记忆细胞的结构和制备方法
公开(公告)号：WO2011106329A4
公开(公告)日：2011-10-27
申请号：PCT/US2011025768
申请日：2011-02-22
申请人： SANDISK 3D LLC , KREUPL FRANZ , SEKAR DEEPAK C
发明人： KREUPL FRANZ , SEKAR DEEPAK C
IPC分类号： H01L27/24 , H01L27/22 , H01L43/08 , H01L45/00
CPC分类号： H01L27/222 , H01L27/24 , H01L43/08 , H01L45/04 , H01L45/145
摘要： A memory device in a 3-D read and write memory includes a resistance- changing layer, and a local contact resistance in series with, and local to, the resistance-changing layer. The local contact resistance is established by a junction between a semiconductor layer and a metal layer. Further, the local contact resistance has a specified level of resistance according to a doping concentration of the semiconductor and a barrier height of the junction. A method for fabricating such a memory device is also presented.
摘要翻译：三维读写存储器中的存储器件包括电阻变化层以及与电阻变化层串联并局部的局部接触电阻。局部接触电阻通过半导体层和金属层之间的结形成。此外，根据半导体的掺杂浓度和结的势垒高度，局部接触电阻具有规定的电阻水平。还提出了制造这种存储器件的方法。

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