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11. 发明申请

WO2013119682A1 DOUBLE SELF-ALIGNED METAL OXIDE TFT 审中-公开
标题翻译：双重自对准金属氧化物TFT
公开(公告)号：WO2013119682A1
公开(公告)日：2013-08-15
申请号：PCT/US2013/024956
申请日：2013-02-06
申请人： CBRITE INC.
发明人： SHIEH, Chan-Long , YU, Gang
IPC分类号： H01J1/62
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L27/1225 , H01L27/1259 , H01L29/45 , H01L29/66969 , H01L29/78606
摘要： A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.
摘要翻译：在透明基板上制造金属氧化物TFT的方法包括以下步骤：在衬底的前表面上定位不透明栅极金属区域，沉积覆盖栅极金属和周围区域的透明栅极电介质和透明金属氧化物半导体层，沉积透明钝化在所述半导体材料上沉积光致抗蚀剂，在所述钝化材料上沉积光致抗蚀剂，曝光和显影所述光致抗蚀剂以去除暴露部分，蚀刻所述钝化材料以留下限定沟道区的钝化区，在所述钝化区上沉积透明导电材料，导电材料，曝光和显影光致抗蚀剂以去除未曝光部分，并且蚀刻导电材料以在沟道区域的相对侧上留下源极和漏极区域。

12. 发明申请

WO2011056294A1 MASK LEVEL REDUCTION FOR MOFET 审中-公开
标题翻译：屏蔽层减少MOFET
公开(公告)号：WO2011056294A1
公开(公告)日：2011-05-12
申请号：PCT/US2010/048264
申请日：2010-09-09
申请人： CBRITE INC. , SHIEH, Chan-Long , FOONG, Fatt , YU, Gang
发明人： SHIEH, Chan-Long , FOONG, Fatt , YU, Gang
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/1225 , H01L29/4908 , H01L29/66969 , H01L29/7869
摘要： A method of fabricating a thin film transistor for an active matrix display using reduced masking operations includes patterning a gate on a substrate. A gate dielectric is formed over the gate and a semiconducting metal oxide is deposited on the gate dielectric. A channel protection layer is patterned on the semiconducting metal oxide overlying the gate to define a channel area and to expose the remaining semiconducting metal oxide. A source/drain metal layer is deposited on the structure and etched through to the channel protection layer above the gate to separate the source/drain metal layer into source and drain terminals and the source/drain metal layer and the semiconducting metal oxide are etched through at the periphery to isolate the transistor. A nonconductive spacer is patterned on the transistor and portions of the surrounding source/drain metal layer.
摘要翻译：使用减少的掩模操作制造用于有源矩阵显示器的薄膜晶体管的方法包括在衬底上图形化栅极。在栅极上形成栅极电介质，并且在栅极电介质上沉积半导体金属氧化物。将通道保护层图案化在覆盖栅极的半导体金属氧化物上，以限定通道区域并露出剩余的半导体金属氧化物。源极/漏极金属层沉积在结构上并蚀刻到栅极上方的沟道保护层，以将源极/漏极金属层分离成源极和漏极端子，并且源/漏极金属层和半导体金属氧化物被蚀刻通过在外围隔离晶体管。在晶体管和周围源极/漏极金属层的部分上构图非导电间隔物。

13. 发明申请

WO2016140975A1 REVERSED FLEXIBLE TFT BACK-PANEL BY GLASS SUBSTRATE REMOVAL 审中-公开
标题翻译：通过玻璃基板去除反向柔性TFT背板
公开(公告)号：WO2016140975A1
公开(公告)日：2016-09-09
申请号：PCT/US2016/020278
申请日：2016-03-01
申请人： CBRITE INC.
发明人： SHIEH, Chan-Long , FOONG, Fatt , YU, Gang , WANG, Guangming
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , H01L27/1222 , H01L27/1225 , H01L29/78669 , H01L29/78678 , H01L29/7869 , H01L51/003 , H01L51/0541 , H01L51/0545 , H01L51/56 , H01L2227/323 , H01L2227/326
摘要： The process of fabricating a flexible TFT back-panel includes depositing etch stop material on a glass support. A matrix of contact pads, gate electrodes and gate dielectric are deposited overlying the etch stop material. Vias are formed through the dielectric in communication with each pad. A matrix of TFTs is formed by depositing and patterning metal oxide semiconductor material to form an active layer of each TFT overlying the gate electrode. Source/drain metal is deposited on the active layer and in the vias in contact with the pads, the source/drain metal defining source/drain terminals of each TFT. Passivation material is deposited in overlying relationship to the TFTs. A color filter layer is formed on the passivation material and a flexible plastic carrier is affixed to the color filter. The glass support member and the etch stop material are then etched away to expose a surface of each of the pads.
摘要翻译：制造柔性TFT后面板的过程包括在玻璃支架上沉积蚀刻停止材料。接触焊盘，栅极电极和栅极电介质的矩阵沉积在蚀刻停止材料上。通过与每个焊盘连通的电介质形成通孔。通过沉积和图案化金属氧化物半导体材料形成TFT的矩阵，以形成覆盖栅电极的每个TFT的有源层。源极/漏极金属沉积在有源层上，并且在与焊盘接触的通孔中，源极/漏极金属限定每个TFT的源极/漏极端子。钝化材料以与TFT相重叠的关系沉积。在钝化材料上形成滤色器层，并将柔性塑料载体固定在滤色器上。然后将玻璃支撑构件和蚀刻停止材料蚀刻掉以暴露每个焊盘的表面。

14. 发明申请

WO2016025731A1 FLEXIBLE APS X-RAY IMAGER WITH MOTFT PIXEL READOUT AND A PIN DIODE SENSING ELEMENT 审中-公开
标题翻译：柔性APS X射线成像器，具有单像素读出和PIN二极管感应元件
公开(公告)号：WO2016025731A1
公开(公告)日：2016-02-18
申请号：PCT/US2015/045083
申请日：2015-08-13
申请人： CBRITE INC.
发明人： SHIEH, Chan-long , YU, Gang
IPC分类号： H01L27/146
CPC分类号： H01L27/14663 , H01L27/14612 , H01L27/14658 , H01L27/14692 , H01L27/308 , H01L51/4293
摘要： A method of fabricating an X-ray imager including the steps of forming an etch stop layer on a glass substrate and depositing a stack of semiconductor layers on the etch stop layer to form a sensor plane. Separating the stack into an array of PIN photodiodes. Depositing a layer of insulating material on the array to form a planarized surface and forming vias through the insulating layer into communication with an upper surface of each photodiode and forming metal contacts on the planarized surface through the vias in contact with each photodiode. Fabricating an array of MOTFTs in an active pixel sensor configuration backplane on the planarized surface and in electrical communication with the contacts, to provide a sensor plane/MOTFT backplane interconnected combination. Attaching a flexible support carrier to the MOTFT backplane and removing the glass substrate. A scintillator is then laminated on the array of photodiodes.
摘要翻译：一种制造X射线成像仪的方法，包括以下步骤：在玻璃衬底上形成蚀刻停止层，并在蚀刻停止层上淀积一叠半导体层以形成传感器平面。将堆叠分成PIN光电二极管阵列。在阵列上沉积绝缘材料层以形成平坦化表面，并且通过绝缘层形成通孔，与每个光电二极管的上表面连通，并通过与每个光电二极管接触的通孔在平坦化表面上形成金属触点。在平坦化表面上的有源像素传感器配置底板中和与触点电连通的MOTFT阵列制造，以提供传感器平面/ MOTFT背板互连的组合。将柔性支撑载体安装到MOTFT背板上，并拆下玻璃基板。然后将闪烁体层压在光电二极管阵列上。

15. 发明申请

WO2014099590A1 METAL OXIDE TFT WITH IMPROVED TEMPERATURE STABILITY 审中-公开
标题翻译：具有改善温度稳定性的金属氧化物薄膜
公开(公告)号：WO2014099590A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/074607
申请日：2013-12-12
申请人： CBRITE INC.
发明人： SHIEH, Chan-Long , FOONG, Fatt , MUSOLF, Juergen , YU, Gang
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78696
摘要： A metal oxide thin film transistor includes a metal oxide semiconductor channel with the metal oxide semiconductor having a conduction band with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band with a second energy level equal to, or less than 0.5 eV above the first energy level.
摘要翻译：金属氧化物薄膜晶体管包括金属氧化物半导体沟道，金属氧化物半导体具有具有第一能级的导带。晶体管还包括覆盖金属氧化物半导体沟道的至少一部分的钝化材料层。钝化材料具有等于或小于第一能级高于0.5eV的第二能级的导带。

16. 发明申请

WO2012097383A1 IMPROVED ACTIVE MATRIX FOR DISPLAYS AND METHOD OF FABRICATION 审中-公开
标题翻译：改进用于显示的活动矩阵和制造方法
公开(公告)号：WO2012097383A1
公开(公告)日：2012-07-19
申请号：PCT/US2012/023388
申请日：2012-01-31
申请人： CBRITE INC. , SHIEH, Chan-Long , YU, Gang
发明人： SHIEH, Chan-Long , YU, Gang
IPC分类号： G09G3/20
CPC分类号： G09G3/3266 , G09G2300/0408 , G09G2300/0426 , G09G2300/0439 , G09G2300/0842 , G09G2310/0218 , G09G2310/0267
摘要： An active matrix incorporated in a color display device includes an array of pixels arranged in n rows and m columns, each pixel having x elements including at least a red, a green, and a blue element. A plurality of m data lines, a different one of the plurality of m data lines being coupled one each to each column of pixels and to each element in each pixel in the column of pixels. A plurality of xn scan lines is provided, the xn scan lines being divided into n groups of x scan lines each. A different group of three xn scan lines is coupled to each row of the n rows of pixels and each of the different x scan lines in each group is coupled to a different one of the x elements.
摘要翻译：结合在彩色显示装置中的有源矩阵包括排列成n行m列的像素阵列，每个像素具有至少包括红色，绿色和蓝色元素的x个元素。多条m条数据线，多条m条数据线中的一条不同的一条线连接到每一列的像素，并与像素列的每个像素中的每一个元素相连。提供多个xn个扫描线，xn条扫描线分为n组x条扫描线。三个xn扫描线的不同组耦合到n行像素的每行，并且每组中的每个不同的x扫描线耦合到x个元素中的不同的x元素。

17. 发明申请

WO2012057903A1 METAL OXIDE TFT WITH IMPROVED STABILITY 审中-公开
标题翻译：金属氧化物膜具有改进的稳定性
公开(公告)号：WO2012057903A1
公开(公告)日：2012-05-03
申请号：PCT/US2011/047768
申请日：2011-08-15
申请人： CBRITE INC. , SHIEH, Chan-long , FOONG, Fatt , YU, Gang
发明人： SHIEH, Chan-long , FOONG, Fatt , YU, Gang
IPC分类号： H01L29/788
CPC分类号： H01L29/7869 , H01L29/78696
摘要： A metal oxide semiconductor device including an active layer of metal oxide, a layer of gate dielectric, and a layer of low trap density material. The layer of low trap density material is sandwiched between the active layer of metal oxide and the layer of gate dielectric. The layer of low trap density material has a major surface parallel and in contact with a major surface of the active layer of metal oxide to form a low trap density interface with the active layer of metal oxide. A second layer of low trap density material can optionally be placed in contact with the opposed major surface of the active layer of metal oxide so that a low trap density interface is formed with both surfaces of the active layer of metal oxide.
摘要翻译：一种金属氧化物半导体器件，包括金属氧化物的有源层，栅极电介质层和低陷阱密度材料层。低陷阱密度材料层夹在金属氧化物的有源层和栅极电介质层之间。低陷阱密度材料层的主表面平行并与金属氧化物的有源层的主表面接触，以形成与金属氧化物的有源层的低陷阱密度界面。可以可选地将第二层低陷阱密度材料放置成与金属氧化物的有源层的相对的主表面接触，使得与金属氧化物的活性层的两个表面形成低陷阱密度界面。

18. 发明申请

WO2010123633A1 DOUBLE SELF-ALIGNED METAL OXIDE TFT 审中-公开
标题翻译：双重自对准金属氧化物TFT
公开(公告)号：WO2010123633A1
公开(公告)日：2010-10-28
申请号：PCT/US2010/027162
申请日：2010-03-12
申请人： CBRITE INC.
发明人： SHIEH, Chan-Long, , YU, Gang
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L29/66969
摘要： A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.
摘要翻译：在透明基板上制造金属氧化物TFT的方法包括以下步骤：在衬底的前表面上定位不透明栅极金属区域，沉积覆盖栅极金属和周围区域的透明栅极电介质和透明金属氧化物半导体层，沉积透明钝化在所述半导体材料上沉积光致抗蚀剂，在所述钝化材料上沉积光致抗蚀剂，曝光和显影所述光致抗蚀剂以去除暴露部分，蚀刻所述钝化材料以留下限定沟道区的钝化区，在所述钝化区上沉积透明导电材料，导电材料，曝光和显影光致抗蚀剂以去除未曝光部分，并且蚀刻导电材料以在沟道区域的相对侧上留下源极和漏极区域。

19. 发明申请

WO2008057560A2 METAL-INSULATOR-METAL (MIM) DEVICES AND THEIR METHODS OF FABRICATION 审中-公开
标题翻译：金属 - 绝缘体 - 金属（MIM）器件及其制造方法
公开(公告)号：WO2008057560A2
公开(公告)日：2008-05-15
申请号：PCT/US2007/023441
申请日：2007-11-06
申请人： CBRITE INC. , GONG, Xiong , YANG, Kaixia , YU, Gang , NILSSON, Boo, Jorgen, Lars , SHIEH, Chan-Long , LEE, Hsing-chung , FOONG, Fatt
发明人： GONG, Xiong , YANG, Kaixia , YU, Gang , NILSSON, Boo, Jorgen, Lars , SHIEH, Chan-Long , LEE, Hsing-chung , FOONG, Fatt
CPC分类号： H01L29/861 , G02F1/1365 , G02F1/167 , H01L29/22 , H01L29/417 , H01L29/786 , H01L45/00 , H01L51/0035 , H01L51/0579 , H01L51/0587
摘要： Two-terminal switching devices of MIM type having at least one electrode formed by a liquid phase processing method are provided for use in active matrix backplane applications; more specifically, MIM devices with symmetric current-voltage characteristics are applied for LCD active matrix backplane applications, and MIM devices with asymmetric current-voltage characteristics are applied for active matrix backplane implementation for electrophoretic displays (EPD) and rotating element displays. In particular, the combination of the bottom metal, metal-oxide insulator and solution-processible top conducting layer enables high throughput, roll-to-roll process for flexible displays.
摘要翻译：提供MIM类型的具有至少一个由液相处理方法形成的电极的两端开关器件用于有源矩阵背板应用; 更具体地说，具有对称电流 - 电压特性的MIM器件被应用于LCD有源矩阵背板应用，并且具有不对称电流 - 电压特性的MIM器件被应用于电泳显示器（EPD）和旋转元件显示器的有源矩阵背板实现。特别是，底部金属，金属氧化物绝缘体和可溶液加工的顶部导电层的组合使得高产量，柔性显示器的卷对卷工艺成为可能。

20. 发明申请

WO2008057553A2 TWO-TERMINAL SWITCHING DEVICES AND THEIR METHODS OF FABRICATION 审中-公开
标题翻译：双端开关器件及其制造方法
公开(公告)号：WO2008057553A2
公开(公告)日：2008-05-15
申请号：PCT/US2007/023427
申请日：2007-11-06
申请人： CBRITE INC. , YU, Gang , SHIEH, Chan-Long , LEE, Hsing-Chung
发明人： YU, Gang , SHIEH, Chan-Long , LEE, Hsing-Chung
CPC分类号： H01L29/861 , G02F1/1365 , G02F1/167 , H01L29/22 , H01L29/417 , H01L29/786 , H01L45/00 , H01L51/0035 , H01L51/0579 , H01L51/0587
摘要： Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotataing element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.
摘要翻译：提供了具有高开/关电流比和高击穿电压的双端开关器件。这些器件可以用作有源矩阵显示器的驱动电路中的开关，例如在电泳，旋转元件和液晶显示器中。开关装置包括两个电极以及位于电极之间的一层宽带半导体材料。根据一个实例，阴极包含具有低功函数的金属，阳极包含具有p +或p ++类型导电性的有机材料，并且宽带半导体包含金属氧化物。阴极和阳极材料之间的功函数差优选为至少约0.6eV。可以实现在约15V的电压范围内至少10,000的通/断电流比。如果需要，可以在具有低熔点的柔性聚合物基材上形成该装置。

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