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1. 发明申请

WO2013019910A1 SELF-ALIGNED METAL OXIDE TFT WITH REDUCED NUMBER OF MASKS 审中-公开
标题翻译：自对准金属氧化物膜，具有减少数量的掩模
公开(公告)号：WO2013019910A1
公开(公告)日：2013-02-07
申请号：PCT/US2012/049238
申请日：2012-08-02
申请人： CBRITE INC. , SHIEH, Chan-Long , YU, Gang , FOONG, Fatt
发明人： SHIEH, Chan-Long , YU, Gang , FOONG, Fatt
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565
摘要： A method of fabricating MO TFTs on transparent substrates by positioning opaque gate metal on the front surface of the substrate defining a gate area, depositing gate dielectric material on the front surface of the substrate, overlying the gate metal and a surrounding area, and depositing metal oxide semiconductor material on the gate dielectric material. Depositing etch stop material on the semiconductor material. Positioning photoresist on the etch stop material, the etch stop material and the photoresist being selectively removable, and the photoresist defining an isolation area in the semiconductor material. Removing uncovered portions of the etch stop. Exposing the photoresist from the rear surface of the substrate using the gate metal as a mask and removing exposed portions so as to leave the etch stop material uncovered except for a portion overlying and aligned with the gate metal. Etching uncovered portions of the semiconductor material to isolate the TFT. Using the photoresist, selectively etching the etch stop layer to leave a portion overlying and aligned with the gate metal and defining a channel area in the semiconductor material. Depositing and patterning conductive material on the etch stop layer and on the semiconductor material to form source and drain areas on opposed sides of the channel area.
摘要翻译：一种在透明基板上制造MO TFT的方法，该方法是通过在形成栅极区域的衬底的前表面上定位不透明栅极金属，在衬底的前表面上沉积栅介电材料，覆盖栅极金属和周围区域，并沉积金属氧化物半导体材料。在半导体材料上沉积蚀刻停止材料。将光致抗蚀剂定位在蚀刻停止材料上，蚀刻停止材料和光致抗蚀剂可选择性地移除，并且光刻胶在半导体材料中限定隔离区域。去除蚀刻停止件的未覆盖部分。使用栅极金属作为掩模从基板的后表面露出光致抗蚀剂，并除去暴露部分，以使除蚀刻停止材料未被覆盖，除了覆盖并与栅极金属对准的部分之外。蚀刻半导体材料的未覆盖部分以隔离TFT。使用光致抗蚀剂，选择性地蚀刻蚀刻停止层以留下覆盖并与栅极金属对准的部分并限定半导体材料中的沟道区域。在蚀刻停止层和半导体材料上沉积和图案化导电材料以在沟道区域的相对侧上形成源极和漏极区域。

2. 发明申请

WO2008057560A2 METAL-INSULATOR-METAL (MIM) DEVICES AND THEIR METHODS OF FABRICATION 审中-公开
标题翻译：金属 - 绝缘体 - 金属（MIM）器件及其制造方法
公开(公告)号：WO2008057560A2
公开(公告)日：2008-05-15
申请号：PCT/US2007/023441
申请日：2007-11-06
申请人： CBRITE INC. , GONG, Xiong , YANG, Kaixia , YU, Gang , NILSSON, Boo, Jorgen, Lars , SHIEH, Chan-Long , LEE, Hsing-chung , FOONG, Fatt
发明人： GONG, Xiong , YANG, Kaixia , YU, Gang , NILSSON, Boo, Jorgen, Lars , SHIEH, Chan-Long , LEE, Hsing-chung , FOONG, Fatt
CPC分类号： H01L29/861 , G02F1/1365 , G02F1/167 , H01L29/22 , H01L29/417 , H01L29/786 , H01L45/00 , H01L51/0035 , H01L51/0579 , H01L51/0587
摘要： Two-terminal switching devices of MIM type having at least one electrode formed by a liquid phase processing method are provided for use in active matrix backplane applications; more specifically, MIM devices with symmetric current-voltage characteristics are applied for LCD active matrix backplane applications, and MIM devices with asymmetric current-voltage characteristics are applied for active matrix backplane implementation for electrophoretic displays (EPD) and rotating element displays. In particular, the combination of the bottom metal, metal-oxide insulator and solution-processible top conducting layer enables high throughput, roll-to-roll process for flexible displays.
摘要翻译：提供MIM类型的具有至少一个由液相处理方法形成的电极的两端开关器件用于有源矩阵背板应用; 更具体地说，具有对称电流 - 电压特性的MIM器件被应用于LCD有源矩阵背板应用，并且具有不对称电流 - 电压特性的MIM器件被应用于电泳显示器（EPD）和旋转元件显示器的有源矩阵背板实现。特别是，底部金属，金属氧化物绝缘体和可溶液加工的顶部导电层的组合使得高产量，柔性显示器的卷对卷工艺成为可能。

3. 发明申请

WO2011056294A1 MASK LEVEL REDUCTION FOR MOFET 审中-公开
标题翻译：屏蔽层减少MOFET
公开(公告)号：WO2011056294A1
公开(公告)日：2011-05-12
申请号：PCT/US2010/048264
申请日：2010-09-09
申请人： CBRITE INC. , SHIEH, Chan-Long , FOONG, Fatt , YU, Gang
发明人： SHIEH, Chan-Long , FOONG, Fatt , YU, Gang
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/1225 , H01L29/4908 , H01L29/66969 , H01L29/7869
摘要： A method of fabricating a thin film transistor for an active matrix display using reduced masking operations includes patterning a gate on a substrate. A gate dielectric is formed over the gate and a semiconducting metal oxide is deposited on the gate dielectric. A channel protection layer is patterned on the semiconducting metal oxide overlying the gate to define a channel area and to expose the remaining semiconducting metal oxide. A source/drain metal layer is deposited on the structure and etched through to the channel protection layer above the gate to separate the source/drain metal layer into source and drain terminals and the source/drain metal layer and the semiconducting metal oxide are etched through at the periphery to isolate the transistor. A nonconductive spacer is patterned on the transistor and portions of the surrounding source/drain metal layer.
摘要翻译：使用减少的掩模操作制造用于有源矩阵显示器的薄膜晶体管的方法包括在衬底上图形化栅极。在栅极上形成栅极电介质，并且在栅极电介质上沉积半导体金属氧化物。将通道保护层图案化在覆盖栅极的半导体金属氧化物上，以限定通道区域并露出剩余的半导体金属氧化物。源极/漏极金属层沉积在结构上并蚀刻到栅极上方的沟道保护层，以将源极/漏极金属层分离成源极和漏极端子，并且源/漏极金属层和半导体金属氧化物被蚀刻通过在外围隔离晶体管。在晶体管和周围源极/漏极金属层的部分上构图非导电间隔物。

4. 发明申请

WO2010011729A1 ACTIVE MATRIX ORGANIC LIGHT EMITTING DISPLAY 审中-公开
标题翻译：有源矩阵有机发光显示
公开(公告)号：WO2010011729A1
公开(公告)日：2010-01-28
申请号：PCT/US2009/051374
申请日：2009-07-22
申请人： CBRITE INC. , SHIEH, Chan-Long , YU, Gang
发明人： SHIEH, Chan-Long , YU, Gang
IPC分类号： G09G3/32
CPC分类号： H01L27/322 , H01L27/3244
摘要： A full-color active matrix organic light emitting display including a transparent substrate, a color filter positioned on an upper surface of the substrate, a spacer layer formed on the upper surface of the color filter, a metal oxide thin film transistor backpanel formed on the spacer layer and defining an array of pixels, and an array of single color, organic light emitting devices formed on the backpanel and positioned to emit light downwardly through the backpanel, the spacer layer, the color filter, and the substrate in a full-color display.
摘要翻译：一种全色有源矩阵有机发光显示器，包括透明基板，位于基板上表面的滤色器，形成在滤色器上表面上的间隔层，金属氧化物薄膜晶体管背板间隔层和限定像素阵列，以及形成在背板上的单色有机发光器件的阵列，并被定位成以全色的方式通过背板，间隔层，滤色器和衬底向下发光。显示。

5. 发明申请

WO2012097383A1 IMPROVED ACTIVE MATRIX FOR DISPLAYS AND METHOD OF FABRICATION 审中-公开
标题翻译：改进用于显示的活动矩阵和制造方法
公开(公告)号：WO2012097383A1
公开(公告)日：2012-07-19
申请号：PCT/US2012/023388
申请日：2012-01-31
申请人： CBRITE INC. , SHIEH, Chan-Long , YU, Gang
发明人： SHIEH, Chan-Long , YU, Gang
IPC分类号： G09G3/20
CPC分类号： G09G3/3266 , G09G2300/0408 , G09G2300/0426 , G09G2300/0439 , G09G2300/0842 , G09G2310/0218 , G09G2310/0267
摘要： An active matrix incorporated in a color display device includes an array of pixels arranged in n rows and m columns, each pixel having x elements including at least a red, a green, and a blue element. A plurality of m data lines, a different one of the plurality of m data lines being coupled one each to each column of pixels and to each element in each pixel in the column of pixels. A plurality of xn scan lines is provided, the xn scan lines being divided into n groups of x scan lines each. A different group of three xn scan lines is coupled to each row of the n rows of pixels and each of the different x scan lines in each group is coupled to a different one of the x elements.
摘要翻译：结合在彩色显示装置中的有源矩阵包括排列成n行m列的像素阵列，每个像素具有至少包括红色，绿色和蓝色元素的x个元素。多条m条数据线，多条m条数据线中的一条不同的一条线连接到每一列的像素，并与像素列的每个像素中的每一个元素相连。提供多个xn个扫描线，xn条扫描线分为n组x条扫描线。三个xn扫描线的不同组耦合到n行像素的每行，并且每组中的每个不同的x扫描线耦合到x个元素中的不同的x元素。

6. 发明申请

WO2008057553A2 TWO-TERMINAL SWITCHING DEVICES AND THEIR METHODS OF FABRICATION 审中-公开
标题翻译：双端开关器件及其制造方法
公开(公告)号：WO2008057553A2
公开(公告)日：2008-05-15
申请号：PCT/US2007/023427
申请日：2007-11-06
申请人： CBRITE INC. , YU, Gang , SHIEH, Chan-Long , LEE, Hsing-Chung
发明人： YU, Gang , SHIEH, Chan-Long , LEE, Hsing-Chung
CPC分类号： H01L29/861 , G02F1/1365 , G02F1/167 , H01L29/22 , H01L29/417 , H01L29/786 , H01L45/00 , H01L51/0035 , H01L51/0579 , H01L51/0587
摘要： Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active matrix displays, e.g., in electrophoretic, rotataing element and liquid crystal displays. The switching devices include two electrodes, and a layer of a broad band semiconducting material residing between the electrodes. According to one example, the cathode comprises a metal having a low work function, the anode comprises an organic material having a p+ or p++ type of conductivity, and the broad band semiconductor comprises a metal oxide. The work function difference between the cathode and the anode material is preferably at least about 0.6 eV. The on/off current ratios of at least 10,000 over a voltage range of about 15 V can be achieved. The devices can be formed, if desired, on flexible polymeric substrates having low melting points.
摘要翻译：提供了具有高开/关电流比和高击穿电压的双端开关器件。这些器件可以用作有源矩阵显示器的驱动电路中的开关，例如在电泳，旋转元件和液晶显示器中。开关装置包括两个电极以及位于电极之间的一层宽带半导体材料。根据一个实例，阴极包含具有低功函数的金属，阳极包含具有p +或p ++类型导电性的有机材料，并且宽带半导体包含金属氧化物。阴极和阳极材料之间的功函数差优选为至少约0.6eV。可以实现在约15V的电压范围内至少10,000的通/断电流比。如果需要，可以在具有低熔点的柔性聚合物基材上形成该装置。

7. 发明申请

WO2003052797A1 ELECTRICALLY PUMPED LONG-WAVELENGTH VCSEL AND METHODS OF FABRICATION 审中-公开
标题翻译：电泵浦长波长VCSEL和制造方法
公开(公告)号：WO2003052797A1
公开(公告)日：2003-06-26
申请号：PCT/US2002/035467
申请日：2002-11-05
申请人： JIANG, Wenbin , CHENG, Julian , SHIEH, Chan-Long , LEE, Hsing-Chung
发明人： JIANG, Wenbin , CHENG, Julian , SHIEH, Chan-Long , LEE, Hsing-Chung
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01L21/02395 , H01L21/02433 , H01L21/02458 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/0262 , H01S5/18313 , H01S5/32366 , H01S5/34306 , H01S5/34346 , H01S2304/02 , H01S2304/04
摘要： A method of fabricating a vertical cavity surface emitting laser comprising the steps of epitaxially growing a first DBR (104) positioned on a substrate (102) wherein the first DBR is epitaxially grown using MOCVD. The substrate is orientated in an off-axis crystallographic direction which increases the radiative efficiency. A first cladding layer (106) is positioned on the first DBR and to an active region (108) is epitaxially grown on the first cladding layer wherein the active region is epitaxially grown using plasma assisted MBE. A second DBR (112) is epitaxially grown on the second cladding layer (110) wherein the second DBR is epitaxially grown using MOCVD. The active region is epitaxially grown using plasma assisted MBE to increase the mole fraction of nitrogen "N" incorporation. The DBR's are grown using MOCVD to improve the electrical performance.
摘要翻译：一种制造垂直腔表面发射激光器的方法，包括以下步骤：外延生长位于衬底（102）上的第一DBR（104），其中使用MOCVD外延生长第一DBR。基板在偏轴结晶方向取向，这提高了辐射效率。第一覆层（106）位于第一DBR上，并且在第一覆层上外延生长有源区（108），其中使用等离子体辅助MBE外延生长有源区。在第二覆层（110）上外延生长第二DBR（112），其中使用MOCVD外延生长第二DBR。使用等离子体辅助MBE外延生长活性区以增加氮“N”掺入的摩尔分数。使用MOCVD生长DBR以提高电气性能。

8. 发明申请

WO2004047242A1 LOW VOLTAGE MULTI-JUNCTION VERTICAL CAVITY SURFACE EMITTING LASER 审中-公开
标题翻译：低电压多功能垂直孔表面发射激光
公开(公告)号：WO2004047242A1
公开(公告)日：2004-06-03
申请号：PCT/US2003/036808
申请日：2003-11-18
申请人： CHENG, Julian , SHIEH, Chan-Long , LIU, Guoli , MURTY, Medicharla, Venkata, Ramana
发明人： CHENG, Julian , SHIEH, Chan-Long , LIU, Guoli , MURTY, Medicharla, Venkata, Ramana
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/0208 , H01S5/0216 , H01S5/0217 , H01S5/0427 , H01S5/0655 , H01S5/18305 , H01S5/18316 , H01S5/18341 , H01S5/18369 , H01S5/18383 , H01S5/2009 , H01S5/2063 , H01S5/3095 , H01S5/426
摘要： An optical device includes a light emitting region (204) which emits light at the wavelength of operation, the light emitting region includes at least one active region (215). An n-type conductivity contact region (216) is positioned on one surface of the active region and a p-type conductivity contact region (218) is positioned on an opposite surface. The p surface of a p/n tunnel junction (202) is positioned on the opposite surface of the p-type conductivity contact region and an n-type conductivity contact region is positioned on the n surface. The light emitting region (204) is positioned within an optical gain cavity which includes a mirror (210) and an opposed mirror (206) and a substrate solder bonded using a bonding layer (214) to at least one of the mirror (210) and the opposed mirror (206).
摘要翻译：光学装置包括发射波长工作的光的发光区域（204），发光区域包括至少一个有源区域（215）。 n型导电性接触区域（216）位于有源区域的一个表面上，p型电导率接触区域（218）位于相对表面上。 p / n隧道结（202）的p面定位在p型电导率接触区域的相对表面上，n型导电接触区域位于n面上。发光区域（204）位于包括反射镜（210）和相对反射镜（206）的光学增益腔内，并且使用结合层（214）将至少一个反射镜（210）和相对的反射镜（206）。

9. 发明申请

WO2002089276A1 SURFACE EMITTING LASER 审中-公开
标题翻译：表面发射激光
公开(公告)号：WO2002089276A1
公开(公告)日：2002-11-07
申请号：PCT/US2002/006293
申请日：2002-03-01
申请人： JIANG, Wenbin , SHIEH, Chan-Long , LEE, Hsing-Chung , SUN, Xiqing
发明人： JIANG, Wenbin , SHIEH, Chan-Long , LEE, Hsing-Chung , SUN, Xiqing
IPC分类号： H01S5/18
CPC分类号： H01S5/18 , H01S5/005 , H01S5/026 , H01S5/0654
摘要： A surface emitting diode (10), such as a laser (10), including an active region (16) positioned between first (15)and second (17) semiconductor layers and extending longitudinally. The active region (16) and at least portions of the first (15) and second (17) semiconductor layers defining first (21) and second (20) facets positioned at opposite ends of the length with the first facet (21) defining a light output for the active region (16). The active region (16) is adjusted to emit a single mode of light. A reflective element (25) is positioned adjacent to the first facet (21) and at an angle with the first facet (21) for receiving light output from the active region (16) and directing the light perpendicular to the active region (16).
摘要翻译：一种表面发射二极管（10），例如激光器（10），其包括位于第一（15）和第二（17）半导体层之间的纵向延伸的有源区（16）。有源区域（16）和限定第一（21）和第二（20）半导体层的第一（15）和第二（17）半导体层的至少部分定位在与第一小面（21）的长度的相对端限定一个用于有源区域（16）的光输出。有源区域（16）被调节以发射单一模式的光。反射元件（25）定位成与第一刻面（21）相邻并且与第一刻面（21）成一定角度，用于接收从有源区域（16）输出的光并且引导垂直于有源区域（16）的光，。

10. 发明申请

WO2001034302A3 BIOCHANNEL ASSAY FOR HYBRIDIZATION WITH BIOMATERIAL 审中-公开
公开(公告)号：WO2001034302A3
公开(公告)日：2001-05-17
申请号：PCT/US2000/042047
申请日：2000-11-09
申请人： MOTOROLA, INC. , SHIEH, Chan-Long , FOLEY, Barbara , YU, Huinan , Choong, Vi-En
发明人： SHIEH, Chan-Long , FOLEY, Barbara , YU, Huinan , Choong, Vi-En
IPC分类号： B01L3/00
摘要： The invention relates to a microfluidic device with microchannels that have separated regions which have a member of a specific binding pair member such as DNA or RNA bound to porous polymer, beads or structures fabricated into the microchannel. The microchannels of the invention are fabricated from plastic and are operatively associated with a fluid propelling component and detector.

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