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11. 发明申请

WO2004112156A1 GAN-BASED SEMICONDUCTOR JUNCTION STRUCTURE 审中-公开
标题翻译：基于GAN的半导体结构结构
公开(公告)号：WO2004112156A1
公开(公告)日：2004-12-23
申请号：PCT/KR2004/001317
申请日：2004-06-03
申请人： EPIVALLEY CO., LTD. , YOO, Tae Kyung
发明人： YOO, Tae Kyung
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/882 , H01L33/06
摘要： The present invention is to provide a group III nitride tunneling junction structure with a low tunneling potential barrier, in which Si layer or a group III-V compound semiconductor In(a)Ga(b)Al(c)As(d)[N]P(e) (0≤a≤1, 0≤b≤1, 0≤c≤1, 0≤d≤1, 0≤e≤1) which has a smaller band gap than that of Al(x)Ga(y)In(z)N (0≤x≤1, 0≤y≤1, 0≤z≤1) and can be doped with a high concentration of p is inserted into a tunneling junction based on a P ++ -Al(x)Ga(y)In(z)N (0≤x≤1, 0≤y≤1, 0≤z≤1) layer and a N ++ -Al(x)Ga(y)In(z)N (0≤x≤1, 0≤y≤1, 0≤z≤1) layer. This tunneling junction structure will be useful for the fabrication of a highly reliable ultrahigh-speed optoelectronic device.
摘要翻译：本发明提供具有低隧穿势垒的III族氮化物隧道结结构，其中Si层或III-V族化合物半导体In（a）Ga（b）Al（c）As（d）[N ] P（e）（0 <= a <= 1,0,0 <= b <= 1,0 <= c <= 1,0 <= d <= 1，0 <= e <= 1）带宽比Al（x）Ga（y）In（z）N（0 <= x <=1,0,0≤y≤1,0<= z <= 1）的带隙，并且可以掺杂高基于P ++，Al（x）Ga（y）In（z）N（0≤x≤1,0<= y <= 1,0 < （z）N（0 <= x <=1,0,0≤y≤1,0<= z <= 1） 1）层。该隧道结结构对于制造高度可靠的超高速光电子器件将是有用的。

12. 发明申请

WO2011008038A3 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译： III类氮化物半导体发光器件
公开(公告)号：WO2011008038A3
公开(公告)日：2011-04-28
申请号：PCT/KR2010004628
申请日：2010-07-15
申请人： EPIVALLEY CO LTD , KIM CHANG-TAE , NAM KI-HYUN
发明人： KIM CHANG-TAE , NAM KI-HYUN
IPC分类号： H01L33/38 , H01L33/02
CPC分类号： H01L33/38
摘要： The present disclosure relates to a group III nitride semiconductor light-emitting device, and more particularly, to a group III nitride semiconductor light-emitting device which emits light through electron-hole recombination, and which comprises: a first electrode and a second electrode for supplying a current for the electron-hole recombination; a first branch electrode branched from the first electrode; and a second branch electrode branched from the second electrode, wherein the second branch electrode has a thickness at least a portion of which is different from the thickness of the first branch electrode.
摘要翻译：本公开涉及III族氮化物半导体发光器件，更具体地，涉及通过电子 - 空穴复合发射光的III族氮化物半导体发光器件，其包括：第一电极和第二电极，提供用于电子 - 空穴复合的电流; 从所述第一电极分支的第一分支电极; 以及从所述第二电极分支的第二分支电极，其中所述第二分支电极的至少一部分厚度与所述第一分支电极的厚度不同。

13. 发明申请

WO2010064870A3 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：WO2010064870A3
公开(公告)日：2010-08-26
申请号：PCT/KR2009007236
申请日：2009-12-04
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , NAM GI YEON , LEE TAE HEE
发明人： KIM CHANG TAE , NAM GI YEON , LEE TAE HEE
IPC分类号： H01L33/38
CPC分类号： H01L33/38 , H01L33/20
摘要： The present disclosure relates to a semiconductor light-emitting device, and more particularly, to a semiconductor light-emitting device which generates light through electron-hole recombination, wherein said semiconductor light-emitting device comprises: a first bonding electrode and a second bonding electrode which supply current for the electron-hole recombination; a first branched finger electrode and a second branched finger electrode branched from the first bonding electrode; and a third branched finger electrode which is branched from a third bonding electrode, and which is interposed between the first branched finger electrode and the second branched finger electrode to have a first spacing from the first branched finger electrode and a second spacing from the second branched finger electrode, wherein said second spacing is narrower than the first spacing. The second branched finger electrode is located farther than the first branched finger electrode from the center of the light-emitting device, and the third branched finger electrode is located farther than the second branched finger electrode from the center of the light-emitting device.
摘要翻译：本公开涉及一种半导体发光器件，更具体地，涉及通过电子 - 空穴复合产生光的半导体发光器件，其中所述半导体发光器件包括：第一接合电极和第二接合电极为电子 - 空穴复合提供电流; 从所述第一接合电极分支的第一分支指状电极和第二分支指状电极; 以及第三分支指状电极，其从第三接合电极分支并且介于所述第一分支指状电极和所述第二分支指状电极之间，以具有与所述第一分支指状电极的第一间隔，以及与所述第二分支指状电极的第二间隔手指电极，其中所述第二间距比第一间隔窄。第二分支指状电极比发光装置的中心位于比第一分支指状电极更远的位置，并且第三分支指状电极位于比发光装置的中心更远离第二分支指状电极的位置。

14. 发明申请

WO2010036055A2 GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III族氮化物半导体发光器件
公开(公告)号：WO2010036055A2
公开(公告)日：2010-04-01
申请号：PCT/KR2009005492
申请日：2009-09-25
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , NA MIN GYU
发明人： KIM CHANG TAE , NA MIN GYU
IPC分类号： H01L33/38
CPC分类号： H01L33/382
摘要： The present invention relates to a group III nitride semiconductor light emitting device comprising: a substrate which has a first groove and a second groove, a first plane, and a second plane facing the first plane; a plurality of group III nitride semiconductor layers including a first group III nitride semiconductor layer which is formed on the first plane of the substrate and has first conductivity, a second group III nitride semiconductor layer which is formed on the first group III nitride semiconductor layer and has second conductivity different from the first conductivity, and an active layer interposed between the first and second group III nitride semiconductor layers, thereby generating light through the recombination of an electron and a hole; a first aperture formed on the first groove along the plurality of group III nitride semiconductor layers; a second aperture formed on the second groove along the plurality of group III nitride semiconductor layers; a first electrode electrically connected to the first group III nitride semiconductor layer at the first aperture through the first groove from the second plane of the substrate; and a second electrode electrically connected to the second group III nitride semiconductor layer through the second groove and the second aperture from the second plane of the substrate.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，包括：具有第一凹槽和第二凹槽，第一平面以及面向第一平面的第二平面的基板; 多个III族氮化物半导体层，包括形成在所述衬底的所述第一平面上且具有第一导电性的第一III族氮化物半导体层，形成在所述第一III族氮化物半导体层上的第二III族氮化物半导体层，具有与第一导电类型不同的第二导电类型，以及插入在第一和第二III族氮化物半导体层之间的有源层，从而通过电子和空穴的再结合产生光; 沿着所述多个III族氮化物半导体层在所述第一凹槽上形成的第一开口; 沿所述多个III族氮化物半导体层在所述第二凹槽上形成的第二孔; 第一电极，所述第一电极在所述第一孔处从所述衬底的所述第二平面通过所述第一沟槽电连接到所述第一III族氮化物半导体层; 以及第二电极，所述第二电极通过所述第二凹槽和所述第二开口从所述衬底的所述第二平面电连接到所述第二III族氮化物半导体层。

15. 发明申请

WO2009139524A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：WO2009139524A1
公开(公告)日：2009-11-19
申请号：PCT/KR2008/005532
申请日：2008-09-19
申请人： EPIVALLEY CO., LTD. , OH, Ji Won
发明人： OH, Ji Won
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32
摘要： The present disclosure relates to a semiconductor light emitting device, the semiconductor light emitting device comprising: a plurality of openings positioned between first electrode and second electrode, the plurality of openings defining a first opening region for suppressing current flow between the first electrode and the second electrode and a second opening region for relatively less suppressing current flow than the first opening region.
摘要翻译：本发明涉及半导体发光器件，该半导体发光器件包括：位于第一电极和第二电极之间的多个开口，所述多个开口限定第一开口区域，用于抑制第一电极与第二电极之间的电流流动电极和第二开口区域，用于比第一开口区域相对较少地抑制电流流动。

16. 发明申请

WO2008082244A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III-NITRIDE半导体发光器件
公开(公告)号：WO2008082244A1
公开(公告)日：2008-07-10
申请号：PCT/KR2007/007060
申请日：2007-12-31
申请人： EPIVALLEY CO., LTD. , PARK, Eun Hyun , JEON, Soo Kun , LIM, Jae Gu
发明人： PARK, Eun Hyun , JEON, Soo Kun , LIM, Jae Gu
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/32
摘要： The present invention relates to a Ill-nitride semiconductor light emitting device including a substrate, an n-type nitride semiconductor layer positioned over the substrate and having an n-type conductivity, the n-type nitride semiconductor layer being provided with an anisotropic conductive layer formed by a first region having a first conductivity and a second region having a second conductivity lower than the first conductivity, a p-type nitride semiconductor layer having a p-type conductivity, an active layer positioned between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer to generate light by recombination of electrons and holes, a first electrode electrically contacting the n-type nitride semiconductor layer, and a second electrode electrically contacting the p-type nitride semiconductor layer.
摘要翻译：本发明涉及一种包括衬底，位于衬底上并具有n型导电性的n型氮化物半导体层的III族氮化物半导体发光器件，该n型氮化物半导体层设置有各向异性导电层由具有第一导电性的第一区域和具有低于第一导电率的第二导电率的第二区域形成，具有p型导电性的p型氮化物半导体层，位于n型氮化物半导体层和通过电子和空穴的复合产生光的p型氮化物半导体层，与n型氮化物半导体层电接触的第一电极和与p型氮化物半导体层电接触的第二电极。

17. 发明申请

WO2007119919A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： III-NITRIDE半导体发光器件及其制造方法
公开(公告)号：WO2007119919A1
公开(公告)日：2007-10-25
申请号：PCT/KR2006/005755
申请日：2006-12-27
申请人： EPIVALLEY CO., LTD. , KIM, Chang-Tae , JUNG, Hyun-Min , JEON, Eui-Gue , KIM, Hyun-Suk , NAM, Gi- Yeon , CHOI, Byeong-Kyun
发明人： KIM, Chang-Tae , JUNG, Hyun-Min , JEON, Eui-Gue , KIM, Hyun-Suk , NAM, Gi- Yeon , CHOI, Byeong-Kyun
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/0075 , H01L33/20 , H01L33/32 , H01L33/382
摘要： The present invention discloses a Ill-nitride compound semiconductor light emitting device and a method of manufacturing the same. The Ill-nitride compound semiconductor light emitting device includes a substrate with a groove formed therein, a plurality of nitride compound semiconductor layers being grown on the substrate, and including an active layer for generating light by recombination of electron and hole, and an opening formed on the groove along the plurality of nitride compound semiconductor layers.
摘要翻译：本发明公开了一种III族氮化物化合物半导体发光器件及其制造方法。 III族氮化物化合物半导体发光器件包括其中形成有凹槽的衬底，在衬底上生长多个氮化物化合物半导体层，并且包括通过电子和空穴的复合产生光的有源层和形成的开口沿着多个氮化物化合物半导体层的沟槽。

18. 发明申请

WO2007043768A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：WO2007043768A1
公开(公告)日：2007-04-19
申请号：PCT/KR2006/003986
申请日：2006-10-02
申请人： EPIVALLEY CO., LTD. , PARK, Eun-Hyun , YOO, Tae-Kyung
发明人： PARK, Eun-Hyun , YOO, Tae-Kyung
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L31/03046 , H01L31/1844
摘要： The present invention discloses a method of manufacturing a semiconductor device including a plurality of semiconductor layers grown on a substrate and removing the substrate from the plurality of semiconductor layers. The method of manufacturing the semiconductor device comprises a first step for growing a III-nitride compound semiconductor layer between the substrate and the plurality of semiconductor layers, and a second step for removing the substrate by etching the III-nitride compound semiconductor layer.
摘要翻译：本发明公开了一种制造半导体器件的方法，该半导体器件包括在衬底上生长的多个半导体层，并从多个半导体层去除衬底。制造半导体器件的方法包括在衬底和多个半导体层之间生长III族氮化物化合物半导体层的第一步骤，以及通过蚀刻III族氮化物化合物半导体层去除衬底的第二步骤。

19. 发明申请

WO2007037654A1 III-NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III-NITRIDE化合物半导体发光器件
公开(公告)号：WO2007037654A1
公开(公告)日：2007-04-05
申请号：PCT/KR2006/003929
申请日：2006-09-29
申请人： EPIVALLEY CO., LTD. , PARK, Eun-Hyun , YOO, Tae-Kyung
发明人： PARK, Eun-Hyun , YOO, Tae-Kyung
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L21/02458 , H01L21/0254 , H01L33/32
摘要： The present invention discloses a Ill-nitride compound semiconductor light emitting device including a substrate, and a plurality of nitride compound semiconductor layers which are grown on the substrate and which include an active layer for generating light by recombination of an electron and a hole. Here, the plurality of nitride compound semiconductor layers include a rough surface region between the substrate and the active layer, the rough surface region formed by removing the plurality of nitride compound semiconductor layers from a side thereof.
摘要翻译：本发明公开了一种包括衬底和多个氮化物化合物半导体层的III族氮化物化合物半导体发光器件，其在衬底上生长并且包括用于通过电子和孔的复合产生光的有源层。这里，多个氮化物化合物半导体层包括在基板和有源层之间的粗糙表面区域，通过从其侧面去除多个氮化物化合物半导体层而形成的粗糙表面区域。

20. 发明申请

WO2006080708A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： III-NITRIDE半导体发光器件及其制造方法
公开(公告)号：WO2006080708A1
公开(公告)日：2006-08-03
申请号：PCT/KR2005/003319
申请日：2005-10-06
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , KIM, Keuk , YOO, Tae Kyung
发明人： KIM, Chang Tae , KIM, Keuk , YOO, Tae Kyung
IPC分类号： H01L33/00 , H01L21/30
CPC分类号： H01L33/32 , H01L33/007 , H01L33/22
摘要： Disclosed herein is a IE-nitride semiconductor light emitting device comprising a plurality of nitride semiconductor layers including a substrate and an active layer deposited on the substrate, in which the substrate is provided with protrusions to let the lights generated in the active layer emit out of the light emitting device and each of the protrusions has a first scattering plane and a second scattering plane, which are not parallel to each other.
摘要翻译：本文公开了一种包括多个氮化物半导体层的氮化物半导体发光器件，其包括衬底和沉积在衬底上的有源层，其中衬底设置有突起，以使在有源层中产生的光发射出发光器件和每个突起具有彼此不平行的第一散射面和第二散射面。

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