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1. 发明申请

WO2010036055A2 GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III族氮化物半导体发光器件
公开(公告)号：WO2010036055A2
公开(公告)日：2010-04-01
申请号：PCT/KR2009005492
申请日：2009-09-25
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , NA MIN GYU
发明人： KIM CHANG TAE , NA MIN GYU
IPC分类号： H01L33/38
CPC分类号： H01L33/382
摘要： The present invention relates to a group III nitride semiconductor light emitting device comprising: a substrate which has a first groove and a second groove, a first plane, and a second plane facing the first plane; a plurality of group III nitride semiconductor layers including a first group III nitride semiconductor layer which is formed on the first plane of the substrate and has first conductivity, a second group III nitride semiconductor layer which is formed on the first group III nitride semiconductor layer and has second conductivity different from the first conductivity, and an active layer interposed between the first and second group III nitride semiconductor layers, thereby generating light through the recombination of an electron and a hole; a first aperture formed on the first groove along the plurality of group III nitride semiconductor layers; a second aperture formed on the second groove along the plurality of group III nitride semiconductor layers; a first electrode electrically connected to the first group III nitride semiconductor layer at the first aperture through the first groove from the second plane of the substrate; and a second electrode electrically connected to the second group III nitride semiconductor layer through the second groove and the second aperture from the second plane of the substrate.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，包括：具有第一凹槽和第二凹槽，第一平面以及面向第一平面的第二平面的基板; 多个III族氮化物半导体层，包括形成在所述衬底的所述第一平面上且具有第一导电性的第一III族氮化物半导体层，形成在所述第一III族氮化物半导体层上的第二III族氮化物半导体层，具有与第一导电类型不同的第二导电类型，以及插入在第一和第二III族氮化物半导体层之间的有源层，从而通过电子和空穴的再结合产生光; 沿着所述多个III族氮化物半导体层在所述第一凹槽上形成的第一开口; 沿所述多个III族氮化物半导体层在所述第二凹槽上形成的第二孔; 第一电极，所述第一电极在所述第一孔处从所述衬底的所述第二平面通过所述第一沟槽电连接到所述第一III族氮化物半导体层; 以及第二电极，所述第二电极通过所述第二凹槽和所述第二开口从所述衬底的所述第二平面电连接到所述第二III族氮化物半导体层。

2. 发明申请

WO2010047483A3 GROUP-III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： GROUP-III氮化物半导体发光器件
公开(公告)号：WO2010047483A3
公开(公告)日：2010-08-05
申请号：PCT/KR2009005710
申请日：2009-10-07
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , NA MIN GYU
发明人： KIM CHANG TAE , NA MIN GYU
IPC分类号： H01L33/20
CPC分类号： H01L33/22 , H01L33/08 , H01L33/20 , H01L33/32
摘要： The present disclosure relates to a Group-III nitride semiconductor light emitting device, more specifically to the Group-III nitride semiconductor light emitting device comprising: a substrate; a first nitride semiconductor layer that is formed on the substrate and has a first conductivity; a second nitride semiconductor layer that is formed on the first nitride semiconductor layer and has a second conductivity different from the first conductivity; plural Group-III nitride semiconductor layers that are placed between the first and second nitride semiconductor layers and include an activation layer, wherein the activation layer generates light through the recombination of electrons with holes; and openings that are formed from the substrate to the plural Group-III nitride semiconductor layers and have first and second scattering planes. The first scattering plane scatters the light generated from the activation layer, and the second scattering plane has a different inclination from the first scattering plane.
摘要翻译：本发明涉及III族氮化物半导体发光器件，更具体地涉及III族氮化物半导体发光器件，其包括：衬底; 第一氮化物半导体层，形成在所述衬底上并具有第一导电性; 第二氮化物半导体层，其形成在所述第一氮化物半导体层上并具有与所述第一导电型不同的第二导电型; 位于第一氮化物半导体层和第二氮化物半导体层之间并且包括活化层的多个III族氮化物半导体层，其中活化层通过电子与空穴的复合而产生光; 以及由衬底形成到多个III族氮化物半导体层并具有第一和第二散射平面的开口。第一散射平面散射从激活层产生的光，并且第二散射平面具有与第一散射平面不同的倾角。

3. 发明申请

WO2010047482A3 GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III族氮化物半导体发光器件
公开(公告)号：WO2010047482A3
公开(公告)日：2010-08-05
申请号：PCT/KR2009005707
申请日：2009-10-07
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , NA MIN GYU
发明人： KIM CHANG TAE , NA MIN GYU
IPC分类号： H01L33/22
CPC分类号： H01L33/32 , H01L33/22
摘要： The present disclosure relates to a Group-III nitride semiconductor light emitting device, more specifically to the Group III nitride semiconductor light emitting device comprising: a substrate that includes a scattering region therein; a Group I, III nitride semiconductor layer that is formed on the substrate and has a first conductivity; a Group II, III nitride semiconductor layer that is formed on the Group I, III nitride semiconductor layer and has a second conductivity different from the first conductivity; and plural Group III nitride semiconductor layers that are placed between the Group I, III and Group II, III nitride semiconductor layers and include an activation layer that generates light through the recombination of electrons with holes.
摘要翻译：本公开涉及III族氮化物半导体发光器件，更具体地涉及III族氮化物半导体发光器件，其包括：衬底，其中包括散射区域; 形成在所述衬底上并具有第一导电性的I，III族氮化物半导体层; IIIA族氮化物半导体层，其形成在所述I族，III族氮化物半导体层上并且具有与所述第一导电型不同的第二导电型; 以及布置在第I族，第III族和第II族，第III族氮化物半导体层之间并且包括通过电子与空穴的复合而产生光的活化层的多个III族氮化物半导体层。

4. 发明申请

WO2010064848A2 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译： III族氮化物半导体发光器件
公开(公告)号：WO2010064848A2
公开(公告)日：2010-06-10
申请号：PCT/KR2009007169
申请日：2009-12-02
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , AN HYUN SU , KIM HYUN SUK
发明人： KIM CHANG TAE , AN HYUN SU , KIM HYUN SUK
IPC分类号： H01L33/36
CPC分类号： H01L33/40 , H01L33/32 , H01L33/44
摘要： The present disclosure relates to a group III nitride semiconductor light-emitting device, and more particularly, to a group III nitride semiconductor light-emitting device comprising: a plurality of group III nitride semiconductor layers having a first group III nitride semiconductor layer with a first conductivity, a second group III nitride semiconductor layer with a second conductivity different from the first conductivity, and an active layer which is interposed between the first group III nitride semiconductor layer and the second group III nitride semiconductor layer, and which generates light by the recombination of electrons and holes; a bonding pad electrically connected to the plurality of group III nitride semiconductor layers; a protective film formed on the bonding pad; and a buffer pad which is interposed between the bonding pad and the protective film, and formed to expose the bonding pad.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，并且更具体地涉及一种III族氮化物半导体发光器件，其包括：多个III族氮化物半导体层，其具有第一III族氮化物半导体层和第一III族氮化物半导体层，具有与第一导电型不同的第二导电型的第二III族氮化物半导体层以及夹在第一III族氮化物半导体层与第二III族氮化物半导体层之间且通过复合而发光的活性层电子和空穴; 电连接到所述多个III族氮化物半导体层的键合焊盘; 形成在键合焊盘上的保护膜; 以及介于键合焊盘和保护膜之间并形成为暴露键合焊盘的缓冲垫。

5. 发明申请

WO2010064870A3 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：WO2010064870A3
公开(公告)日：2010-08-26
申请号：PCT/KR2009007236
申请日：2009-12-04
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , NAM GI YEON , LEE TAE HEE
发明人： KIM CHANG TAE , NAM GI YEON , LEE TAE HEE
IPC分类号： H01L33/38
CPC分类号： H01L33/38 , H01L33/20
摘要： The present disclosure relates to a semiconductor light-emitting device, and more particularly, to a semiconductor light-emitting device which generates light through electron-hole recombination, wherein said semiconductor light-emitting device comprises: a first bonding electrode and a second bonding electrode which supply current for the electron-hole recombination; a first branched finger electrode and a second branched finger electrode branched from the first bonding electrode; and a third branched finger electrode which is branched from a third bonding electrode, and which is interposed between the first branched finger electrode and the second branched finger electrode to have a first spacing from the first branched finger electrode and a second spacing from the second branched finger electrode, wherein said second spacing is narrower than the first spacing. The second branched finger electrode is located farther than the first branched finger electrode from the center of the light-emitting device, and the third branched finger electrode is located farther than the second branched finger electrode from the center of the light-emitting device.
摘要翻译：本公开涉及一种半导体发光器件，更具体地，涉及通过电子 - 空穴复合产生光的半导体发光器件，其中所述半导体发光器件包括：第一接合电极和第二接合电极为电子 - 空穴复合提供电流; 从所述第一接合电极分支的第一分支指状电极和第二分支指状电极; 以及第三分支指状电极，其从第三接合电极分支并且介于所述第一分支指状电极和所述第二分支指状电极之间，以具有与所述第一分支指状电极的第一间隔，以及与所述第二分支指状电极的第二间隔手指电极，其中所述第二间距比第一间隔窄。第二分支指状电极比发光装置的中心位于比第一分支指状电极更远的位置，并且第三分支指状电极位于比发光装置的中心更远离第二分支指状电极的位置。

6. 发明申请

WO2011046372A3 GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT 审中-公开
标题翻译：第III组氮化物半导体发光元件
公开(公告)号：WO2011046372A3
公开(公告)日：2011-07-07
申请号：PCT/KR2010007032
申请日：2010-10-14
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , KIM HYUN SUK , NAM GI YEON , LEE TAE HEE , AN HYUN SU , KIM JONG HYOUK
发明人： KIM CHANG TAE , KIM HYUN SUK , NAM GI YEON , LEE TAE HEE , AN HYUN SU , KIM JONG HYOUK
IPC分类号： H01L33/38
CPC分类号： H01L33/42 , H01L33/38 , H01L2933/0091
摘要： The present disclosure relates to a group III nitride semiconductor light emitting element comprising: a plurality of group III nitride semiconductor layers comprising an active layer which generates light by using electron-hole recombination, and group III nitride semiconductor layers respectively disposed on the upper and lower parts of the active layer; a light-transmitting electrode having an upper surface and a lower surface, which is positioned on top of the plurality of group III nitride semiconductor layers and is formed with a recess such that the upper layer is removed while the lower layer is unexposed; and projections which are formed on the floor surface of the recess and scatter the light generated in the active layer.
摘要翻译：本公开涉及一种III族氮化物半导体发光元件，其包括：多个III族氮化物半导体层，其包含通过使用电子 - 空穴复合产生光的有源层，以及分别设置在上部和下部的III族氮化物半导体层活性层的一部分; 位于所述多个III族氮化物半导体层的顶部上的具有上表面和下表面的透光电极，并且形成有使所述上层被去除而所述下层未被暴露的凹部; 以及形成在凹部的地板表面上的突起，并且散射在有源层中产生的光。

7. 发明申请

WO2009091153A3 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： III-氮化物半导体发光器件及其制造方法
公开(公告)号：WO2009091153A3
公开(公告)日：2009-10-22
申请号：PCT/KR2008007885
申请日：2008-12-31
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , LEE TAE HEE
发明人： KIM CHANG TAE , LEE TAE HEE
IPC分类号： H01L33/20 , H01L33/32
CPC分类号： H01L33/20 , H01L33/32
摘要： The present invention provides a Ill-nitride semiconductor light emitting device and a method for manufacturing the same including: a substrate; a plurality of Ill-nitride semiconductor layers formed on the substrate, and provided with an active layer generating light by recombination of electrons and holes; a boundary surface defined between the substrate and the plurality of Ill-nitride semiconductor layers; and a pair of slant surfaces formed from the boundary surface on the substrate and the plurality of Ill-nitride semiconductor layers so as to emit light generated in the active layer to the outside.
摘要翻译：本发明提供了一种III族氮化物半导体发光器件及其制造方法，包括：衬底; 多个III族氮化物半导体层，形成在所述衬底上，并且设置有通过电子和空穴的复合而产生光的有源层; 限定在所述衬底和所述多个III族氮化物半导体层之间的边界表面; 以及从基板上的边界表面和多个III族氮化物半导体层形成的一对倾斜表面，以将在有源层中产生的光发射到外部。

8. 发明申请

WO2009002129A3 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：WO2009002129A3
公开(公告)日：2009-03-12
申请号：PCT/KR2008003756
申请日：2008-06-27
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , LEE TAE HEE , JUNG HYUN MIN , NAM GI YEON
发明人： KIM CHANG TAE , LEE TAE HEE , JUNG HYUN MIN , NAM GI YEON
IPC分类号： H01L33/00 , H01L33/22
CPC分类号： H01L33/22 , H01L33/007
摘要： The present invention relates to a semiconductor light emitting device and a method of manufacturing the same, and more particularly, to a Ill-nitride semiconductor light emitting device which improves external quantum efficiency by forming an irregular portion on a side of a semiconductor layer by a protrusion formed on a substrate, and a method of manufacturing the same.
摘要翻译：半导体发光器件及其制造方法技术领域本发明涉及一种半导体发光器件及其制造方法，更具体地，涉及通过在半导体层的侧面上形成不规则部分来提高外部量子效率的III族氮化物半导体发光器件在基板上形成的突起及其制造方法。

9. 发明申请

WO2011087310A3 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译： III类氮化物半导体发光器件
公开(公告)号：WO2011087310A3
公开(公告)日：2011-10-20
申请号：PCT/KR2011000281
申请日：2011-01-14
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , LEE TAE HEE
发明人： KIM CHANG TAE , LEE TAE HEE
IPC分类号： H01L33/38
CPC分类号： H01L33/38 , H01L33/20
摘要： The present disclosure relates to a group III nitride semiconductor light-emitting device, comprising a plurality of group III nitride semiconductor layers including a first group III nitride semiconductor layer having a first conductivity, a second group III nitride semiconductor layer having a second conductivity different from the first conductivity, and an activation layer interposed between the first group III nitride semiconductor layer and the second group III-nitride semiconductor layer, so as to generate light through the recombination of electrons and holes; a bonding pad electrically connected to the plurality of group III nitride semiconductor layers; a light-transmitting electrode which is formed on the second group III nitride semiconductor layer, and which has a plurality of openings for exposing the second group III nitride semiconductor layer; a first electrode formed to fill at least a portion of the plurality of openings; and a second electrode formed on the first group III nitride semiconductor layer, wherein said bonding pad and the first electrode are electrically connected together.
摘要翻译：本公开内容涉及一种III族氮化物半导体发光器件，其包括多个III族氮化物半导体层，所述III族氮化物半导体层包括具有第一导电性的第一III族氮化物半导体层，具有第二导电性的第二III族氮化物半导体层第一导电性和插入在第一III族氮化物半导体层和第二III族氮化物半导体层之间的活化层，以通过电子和空穴的复合产生光; 电连接到所述多个III族氮化物半导体层的焊盘; 形成在第二III族氮化物半导体层上的透光电极，具有用于使第二III族氮化物半导体层露出的多个开口; 形成为填充所述多个开口的至少一部分的第一电极; 以及形成在所述第一III族氮化物半导体层上的第二电极，其中所述焊盘和所述第一电极电连接在一起。

10. 发明申请

WO2010123235A3 DIMMING CONTROL METHOD FOR A DISPLAY 审中-公开
标题翻译：用于显示器的调试控制方法
公开(公告)号：WO2010123235A3
公开(公告)日：2011-01-20
申请号：PCT/KR2010002417
申请日：2010-04-19
申请人： EPIVALLEY CO LTD , KIM DONG SEL , KIM CHANG TAE
发明人： KIM DONG SEL , KIM CHANG TAE
IPC分类号： G09G3/32 , G02F1/133 , H05B37/02
CPC分类号： H05B33/0845 , G02F2001/133614 , G09G3/3406 , G09G3/3413 , G09G2320/0242 , G09G2320/064 , H05B33/086
摘要： The present disclosure relates to a dimming control method for a display. More particularly, the present invention relates to a dimming control method for a display including: a light-emitting device having a first light-emitting body having an active layer for generating first light through electron-hole recombination; and a second light-emitting body excited by the first light to emit second light having a wavelength longer than that of the first light, wherein said dimming control method comprises the steps of: adjusting the power to be supplied to the light-emitting device in accordance with a dimming request; and adjusting the brightness of the display in accordance with the adjusted power using the second light-emitting body containing a first fluorescent material having the characteristic that color coordinates shift in a first direction in accordance with the adjustment of power and a second fluorescent material having a characteristic that color coordinates shift in a second direction opposite the first direction.
摘要翻译：本公开涉及一种用于显示器的调光控制方法。更具体地说，本发明涉及一种用于显示器的调光控制方法，包括：具有第一发光体的发光器件，具有通过电子 - 空穴复合产生第一光的有源层; 以及由所述第一光激发的第二发光体，以发射波长比所述第一光的波长更长的第二光，其中所述调光控制方法包括以下步骤：调整供应给所述发光装置的功率按照调光要求; 并且使用包含第一荧光材料的第二发光体调节显示器的亮度，所述第二发光体具有根据功率调节而沿第一方向的色坐标偏移和具有第颜色坐标沿与第一方向相反的第二方向移动的特征。

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