专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2011087310A3 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译： III类氮化物半导体发光器件
公开(公告)号：WO2011087310A3
公开(公告)日：2011-10-20
申请号：PCT/KR2011000281
申请日：2011-01-14
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , LEE TAE HEE
发明人： KIM CHANG TAE , LEE TAE HEE
IPC分类号： H01L33/38
CPC分类号： H01L33/38 , H01L33/20
摘要： The present disclosure relates to a group III nitride semiconductor light-emitting device, comprising a plurality of group III nitride semiconductor layers including a first group III nitride semiconductor layer having a first conductivity, a second group III nitride semiconductor layer having a second conductivity different from the first conductivity, and an activation layer interposed between the first group III nitride semiconductor layer and the second group III-nitride semiconductor layer, so as to generate light through the recombination of electrons and holes; a bonding pad electrically connected to the plurality of group III nitride semiconductor layers; a light-transmitting electrode which is formed on the second group III nitride semiconductor layer, and which has a plurality of openings for exposing the second group III nitride semiconductor layer; a first electrode formed to fill at least a portion of the plurality of openings; and a second electrode formed on the first group III nitride semiconductor layer, wherein said bonding pad and the first electrode are electrically connected together.
摘要翻译：本公开内容涉及一种III族氮化物半导体发光器件，其包括多个III族氮化物半导体层，所述III族氮化物半导体层包括具有第一导电性的第一III族氮化物半导体层，具有第二导电性的第二III族氮化物半导体层第一导电性和插入在第一III族氮化物半导体层和第二III族氮化物半导体层之间的活化层，以通过电子和空穴的复合产生光; 电连接到所述多个III族氮化物半导体层的焊盘; 形成在第二III族氮化物半导体层上的透光电极，具有用于使第二III族氮化物半导体层露出的多个开口; 形成为填充所述多个开口的至少一部分的第一电极; 以及形成在所述第一III族氮化物半导体层上的第二电极，其中所述焊盘和所述第一电极电连接在一起。

2. 发明申请

WO2010123235A3 DIMMING CONTROL METHOD FOR A DISPLAY 审中-公开
标题翻译：用于显示器的调试控制方法
公开(公告)号：WO2010123235A3
公开(公告)日：2011-01-20
申请号：PCT/KR2010002417
申请日：2010-04-19
申请人： EPIVALLEY CO LTD , KIM DONG SEL , KIM CHANG TAE
发明人： KIM DONG SEL , KIM CHANG TAE
IPC分类号： G09G3/32 , G02F1/133 , H05B37/02
CPC分类号： H05B33/0845 , G02F2001/133614 , G09G3/3406 , G09G3/3413 , G09G2320/0242 , G09G2320/064 , H05B33/086
摘要： The present disclosure relates to a dimming control method for a display. More particularly, the present invention relates to a dimming control method for a display including: a light-emitting device having a first light-emitting body having an active layer for generating first light through electron-hole recombination; and a second light-emitting body excited by the first light to emit second light having a wavelength longer than that of the first light, wherein said dimming control method comprises the steps of: adjusting the power to be supplied to the light-emitting device in accordance with a dimming request; and adjusting the brightness of the display in accordance with the adjusted power using the second light-emitting body containing a first fluorescent material having the characteristic that color coordinates shift in a first direction in accordance with the adjustment of power and a second fluorescent material having a characteristic that color coordinates shift in a second direction opposite the first direction.
摘要翻译：本公开涉及一种用于显示器的调光控制方法。更具体地说，本发明涉及一种用于显示器的调光控制方法，包括：具有第一发光体的发光器件，具有通过电子 - 空穴复合产生第一光的有源层; 以及由所述第一光激发的第二发光体，以发射波长比所述第一光的波长更长的第二光，其中所述调光控制方法包括以下步骤：调整供应给所述发光装置的功率按照调光要求; 并且使用包含第一荧光材料的第二发光体调节显示器的亮度，所述第二发光体具有根据功率调节而沿第一方向的色坐标偏移和具有第颜色坐标沿与第一方向相反的第二方向移动的特征。

3. 发明申请

WO2010064872A3 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：WO2010064872A3
公开(公告)日：2010-08-26
申请号：PCT/KR2009007241
申请日：2009-12-04
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , NAM GI YEON
发明人： KIM CHANG TAE , NAM GI YEON
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L33/20
摘要： The present disclosure relates to a semiconductor light-emitting device, and more particularly, to a semiconductor light-emitting device comprising: a plurality of semiconductor layers having a first semiconductor layer with a first conductivity, a second semiconductor layer with a second conductivity different from the first conductivity, and an active layer which is interposed between the first semiconductor layer and the second semiconductor layer, and which generates light by electron-hole recombination; a bonding pad electrically connected to the plurality of semiconductor layers; a first electrode spread over the plurality of semiconductor layers; and a second electrode which is extended to the first electrode from the bonding pad, and which electrically interconnects the bonding pad and the first electrode.
摘要翻译：本发明涉及一种半导体发光器件，并且更具体地涉及一种半导体发光器件，其包括：多个半导体层，其具有第一导电性的第一半导体层，第二导电性不同于第二导电性的第二半导体层所述第一导电性，以及介于所述第一半导体层与所述第二半导体层之间且通过电子空穴复合而发光的活性层，电连接到所述多个半导体层的键合焊盘; 分布在所述多个半导体层上的第一电极; 以及第二电极，从键合焊盘延伸到第一电极，并且电连接键合焊盘和第一电极。

4. 发明申请

WO2010064869A3 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：WO2010064869A3
公开(公告)日：2010-08-19
申请号：PCT/KR2009007235
申请日：2009-12-04
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , LEE TAE HEE
发明人： KIM CHANG TAE , LEE TAE HEE
IPC分类号： H01L33/20
CPC分类号： H01L33/642 , H01L33/46
摘要： The present invention relates to a semiconductor light-emitting device, and more particularly, to a semiconductor light-emitting device comprising: a substrate; an active layer which is formed on the substrate, and which generates light through electron-hole recombination; and a plurality of blocks formed beneath the substrate.
摘要翻译：半导体发光器件技术领域本发明涉及一种半导体发光器件，并且更具体地涉及一种半导体发光器件，其包括：衬底; 在衬底上形成并通过电子 - 空穴复合产生光的有源层; 以及在衬底下方形成的多个块。

5. 发明申请

WO2009096647A1 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III-NITRIDE半导体发光器件
公开(公告)号：WO2009096647A1
公开(公告)日：2009-08-06
申请号：PCT/KR2008/005531
申请日：2008-09-19
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , LEE, Tae Hee , NAM, Gi Yeon
发明人： KIM, Chang Tae , LEE, Tae Hee , NAM, Gi Yeon
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02658 , H01L33/007 , H01L33/22
摘要： The present disclosure relates to a Ill-nitride semiconductor light emitting device, comprising: a substrate with a plurality of protrusions formed thereon, each of the plurality of protrusions having three acute portions and three obtuse portions; and a plurality of Ill-nitride semiconductor layers formed over the substrate and including an active layer for generating light by recombination of electrons and holes.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，包括：具有形成在其上的多个突起的衬底，所述多个突起中的每一个具有三个尖锐部分和三个钝角部分; 以及形成在所述基板上并且包括通过电子和空穴的复合产生光的有源层的多个III族氮化物半导体层。

6. 发明申请

WO2009091153A2 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： III型氮化物半导体发光器件及其制造方法
公开(公告)号：WO2009091153A2
公开(公告)日：2009-07-23
申请号：PCT/KR2008/007885
申请日：2008-12-31
申请人： EPIVALLEY CO., LTD. , KIM, Chang Tae , LEE, Tae Hee
发明人： KIM, Chang Tae , LEE, Tae Hee
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/32
摘要： The present invention provides a Ill-nitride semiconductor light emitting device and a method for manufacturing the same including: a substrate; a plurality of Ill-nitride semiconductor layers formed on the substrate, and provided with an active layer generating light by recombination of electrons and holes; a boundary surface defined between the substrate and the plurality of Ill-nitride semiconductor layers; and a pair of slant surfaces formed from the boundary surface on the substrate and the plurality of Ill-nitride semiconductor layers so as to emit light generated in the active layer to the outside.
摘要翻译：本发明提供一种III族氮化物半导体发光器件及其制造方法，包括：衬底; 形成在基板上的多个III族氮化物半导体层，并且具有通过电子和空穴的复合产生光的有源层; 限定在所述基板和所述多个III族氮化物半导体层之间的边界面; 以及从衬底上的边界表面和多个III族氮化物半导体层形成的一对倾斜表面，以便将在有源层中产生的光发射到外部。

7. 发明申请

WO2009045005A2 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III-氮化物半导体发光器件
公开(公告)号：WO2009045005A2
公开(公告)日：2009-04-09
申请号：PCT/KR2008005395
申请日：2008-09-11
申请人： EPIVALLEY CO LTD , JEON SOO KUN , PARK EUN HYUN , LIM JAE GU
发明人： JEON SOO KUN , PARK EUN HYUN , LIM JAE GU
IPC分类号： H01L33/06 , H01L33/14
CPC分类号： H01L33/06 , H01L33/14
摘要： The present invention relates to a Ill-nitride semiconductor light emitting device, and more particularly, to a Ill-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 300 A in an n-side contact layer.
摘要翻译：本发明涉及III族氮化物半导体发光器件，并且更具体地涉及一种III族氮化物半导体发光器件，其能够通过提供厚度超过300埃的未掺杂GaN层来促进电流扩展并且改善静电放电特性一个n侧接触层。

8. 发明申请

WO2008026902A9 III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译： III-NITRIDE半导体发光器件
公开(公告)号：WO2008026902A9
公开(公告)日：2008-10-16
申请号：PCT/KR2007004219
申请日：2007-08-31
申请人： EPIVALLEY CO LTD , KIM CHANG TAE , JUNG HYUN-MIN , LEE TAE-HEE , CHOI BYEONG-KYUN , KIM HYUN-SUK , NAM GI-YEON
发明人： KIM CHANG TAE , JUNG HYUN-MIN , LEE TAE-HEE , CHOI BYEONG-KYUN , KIM HYUN-SUK , NAM GI-YEON
IPC分类号： H01L33/20 , H01L33/32 , H01L33/38
CPC分类号： H01L33/382 , H01L33/20 , H01L33/32
摘要： The present invention relates to a Ill-nitride semiconductor light emitting device, particularly, an electrode structure thereof. The Ill-nitride semiconductor light emitting device includes a substrate, a plurality of Ill-nitride semiconductor layers grown on the substrate, and composed of a first Ill-nitride semiconductor layer with first conductivity, a second Ill-nitride semiconductor layer with second conductivity different from the first conductivity, and an active layer positioned between the first Ill-nitride semiconductor layer and the second Ill-nitride semiconductor layer, for generating light by recombination of electrons and holes, and a hole passing through the substrate and the plurality of Ill-nitride semiconductor layers.
摘要翻译：本发明涉及一种III族氮化物半导体发光器件，特别是其电极结构。 III族氮化物半导体发光器件包括衬底，在衬底上生长的多个III族氮化物半导体层，并且由具有第一导电性的第一III族氮化物半导体层，具有第二导电性的第二III族氮化物半导体层组成以及位于第一III族氮化物半导体层和第二III族氮化物半导体层之间的有源层，用于通过电子和空穴的复合产生光，以及穿过衬底的多个Ill- 氮化物半导体层。

9. 发明申请

WO2007024122A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：WO2007024122A1
公开(公告)日：2007-03-01
申请号：PCT/KR2006/003363
申请日：2006-08-25
申请人： EPIVALLEY CO., LTD. , PARK, Eun-Hyun , AHN, Do-Yeol , YOO, Tae-Kyung
发明人： PARK, Eun-Hyun , AHN, Do-Yeol , YOO, Tae-Kyung
IPC分类号： H01L33/00
CPC分类号： H01L33/26 , B82Y20/00 , H01S5/34333 , H01S5/34393 , H01S5/347
摘要： The present invention discloses a semiconductor light emitting device comprising a plurality of semiconductor layers including an active layer for generating light by recombination of an electron and a hole. Here, the active layer includes an Al x Ga y In 1-x-y N (0≤x≤l, 0≤y≤l, 0≤x+y≤l) well layer and a Mg a Zn 1-a O (0
摘要翻译：本发明公开了一种半导体发光器件，其包括多个半导体层，所述半导体层包括通过电子和孔的复合产生光的有源层。这里，有源层包括N 1-xy N（0 = x = 1,0 = y = 1， 0 = x + y = 1）阱层和Mg（1 1）阻挡层。

10. 发明申请

WO2005008795A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：WO2005008795A1
公开(公告)日：2005-01-27
申请号：PCT/KR2004/001770
申请日：2004-07-16
申请人： EPIVALLEY CO., LTD. , YOO, Tae Kyung , PARK, Joongseo , KIM, Chang Tae
发明人： YOO, Tae Kyung , PARK, Joongseo , KIM, Chang Tae
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , C23C16/303 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01L33/32 , H01S5/32341 , H01S2304/04
摘要： The present invention relates to a nitride semiconductor light emitting device including a plurality of nitride semiconductor layers with a p-type nitride semiconductor formed using as nitrogen precursor ammonia together with hydrazine-based material which upon thermal decomposition generates a radical being combined with a hydrogen radical to eliminate the hydrogen radical, thereby eliminates the need for a subsequent annealing process for removing hydrogen and prevents the active layer from being thermally damaged due to the subsequent annealing process.
摘要翻译：本发明涉及一种氮化物半导体发光器件，其包括多个氮化物半导体层，其具有使用氮前体氨与肼基材料形成的p型氮化物半导体，肼基材料在热分解时产生与氢原子结合的基团以消除氢自由基，由此不需要随后的用于除去氢的退火工艺，并且防止活性层由于随后的退火工艺而被热损坏。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式