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    • 105. 发明申请
    • FRDY PULL -UP RESISTOR ACTIVATION
    • FRDY PULLUP电阻启动
    • WO2012009068A1
    • 2012-01-19
    • PCT/US2011/039421
    • 2011-06-07
    • SANDISK TECHNOLOGIES INC.CHENG, Steven, S.HWANG, PeterCHANG, Annie, C.
    • CHENG, Steven, S.HWANG, PeterCHANG, Annie, C.
    • G06F13/40G06F13/42
    • G06F13/4239G06F13/4086Y02D10/14Y02D10/151
    • A method and apparatus for reducing power consumption during an operation in a non-volatile storage device is disclosed. A non-volatile storage device controller that is in communication with a non-volatile memory in the non-volatile storage device receives a characteristic corresponding to a time duration required for the non-volatile memory to complete an operation. The controller disables a circuit that indicates when an operation by the non-volatile memory is complete. The controller then initiates the operation in the non-volatile memory, and maintains the circuit in a disabled state for a first predetermined time that is a portion of the time duration. The controller enables the circuit upon expiration of the first predetermined time and prior to the completion of the operation. The controller receives an indication of the completion of the operation via the circuit.
    • 公开了一种用于在非易失性存储装置中的操作期间降低功耗的方法和装置。 与非易失性存储设备中的非易失性存储器通信的非易失性存储设备控制器接收与非易失性存储器完成操作所需的持续时间相对应的特性。 控制器禁用指示非易失性存储器的操作何时完成的电路。 然后,控制器在非易失性存储器中启动操作,并且将电路保持在禁用状态,作为持续时间的一部分的第一预定时间。 控制器在第一预定时间到期并且在完成操作之前启用该电路。 控制器通过电路接收完成操作的指示。
    • 109. 发明申请
    • HIGH SPEED MEMORY MODULES
    • 高速内存模块
    • WO2006011974A2
    • 2006-02-02
    • PCT/US2005/020653
    • 2005-06-09
    • INTEL CORPORATIONCHANG, Ge
    • CHANG, Ge
    • G11C7/00
    • G06F13/4086
    • Apparatus and method for producing memory modules having a plurality of branches connected to a memory bus, each branch containing at least one dynamic random access memory (DRAM) device or synchronous random access memory (SDRAM) device connected to the memory bus via at least one transmission signal (TS) line and/or at least one sub-transmission signal (STS) line. The memory modules include at least one branch containing a resistor connected to the TS line or STS line and connected series with the DRAM device or SDRAM device and connected to the memory bus. A computing system implementing the memory modules is also discussed.
    • 用于产生具有连接到存储器总线的多个分支的存储器模块的设备和方法,每个分支包含连接到存储器总线的至少一个动态随机存取存储器(DRAM)设备或同步随机存取存储器(SDRAM)设备 经由至少一个传输信号(TS)线和/或至少一个子传输信号(STS)线连接到存储器总线。 存储器模块包括至少一个分支,该分支包含连接到TS线或STS线并与DRAM装置或SDRAM装置串联并连接到存储器总线的电阻器。 还讨论了实现存储器模块的计算系统。