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91. 发明申请

WO2013063070A1 USE OF ALKALINE-EARTH METALS TO REDUCE IMPURITY INCORPORATION INTO A GROUP-III NITRIDE CRYSTAL 审中-公开
标题翻译：使用碱性金属矿物将减少成本减少到III类氮化物晶体
公开(公告)号：WO2013063070A1
公开(公告)日：2013-05-02
申请号：PCT/US2012/061628
申请日：2012-10-24
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , PIMPUTKAR, Siddha , VON DOLLEN, Paul M. , SPECK, James S. , NAKAMURA, Shuji
发明人： PIMPUTKAR, Siddha , VON DOLLEN, Paul M. , SPECK, James S. , NAKAMURA, Shuji
IPC分类号： C01B21/06 , C30B7/00 , B01D9/00
CPC分类号： C30B7/105 , C30B29/403 , Y10T117/1096
摘要： Alkaline-earth metals are used to reduce impurity incorporation into a III nitride crystal grown using the ammonothermal method.
摘要翻译：使用碱土金属来减少掺入使用氨热法生长的III族氮化物晶体中的杂质。

92. 发明申请

WO2012058524A1 AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS ON SEEDS WITH AT LEAST TWO SURFACES MAKING AN ACUTE, RIGHT OR OBTUSE ANGLE WITH EACH OTHER 审中-公开
标题翻译：具有至少两个表面的种子上的III类氮化物晶体的热成长生成与每个其他物质的急性，右或者角度角
公开(公告)号：WO2012058524A1
公开(公告)日：2012-05-03
申请号：PCT/US2011/058261
申请日：2011-10-28
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , PIMPUTKAR, Siddha , SPECK, James S. , NAKAMURA, Shuji , KAWABATA, Shin-ichiro
发明人： PIMPUTKAR, Siddha , SPECK, James S. , NAKAMURA, Shuji , KAWABATA, Shin-ichiro
IPC分类号： C30B28/00
CPC分类号： C30B7/105 , C30B29/403 , Y10T428/24479
摘要： An ammonothermal growth of group-III nitride crystals on starting seed crystals with at least two surfaces making an acute, right or obtuse angle, i.e., greater than 0 degrees and less than 180 degrees, with respect to each other, such that the exposed surfaces together form a concave surface.
摘要翻译： III族氮化物晶体在具有至少两个表面的起始晶种上相对于彼此形成锐角，右或钝角，即大于0度且小于180度的氨热生长，使得暴露表面一起形成凹面。

93. 发明申请

WO2007009035A2 LATERAL GROWTH METHOD FOR DEFECT REDUCTION OF SEMIPOLAR NITRIDE FILMS 审中-公开
标题翻译：用于半圆形氮化物膜的缺陷减少的侧向生长方法
公开(公告)号：WO2007009035A2
公开(公告)日：2007-01-18
申请号：PCT/US2006/027189
申请日：2006-07-13
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , BAKER, Troy, J. , HASKELL, Benjamin, A. , SPECK, James, S. , NAKAMURA, Shuji
发明人： BAKER, Troy, J. , HASKELL, Benjamin, A. , SPECK, James, S. , NAKAMURA, Shuji
IPC分类号： H01L21/20
CPC分类号： H01L21/02609 , C30B25/02 , C30B29/40 , H01L21/0237 , H01L21/02378 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/0265
摘要： A lateral growth method for defect reduction of semipolar nitride films. The process steps include selecting a semipolar nitride plane and composition, selecting a suitable substrate for growth of the semipolar nitride plane and composition, and applying a selective growth process in which the semipolar nitride nucleates on some areas of the substrate at the exclusion of other areas of the substrate, wherein the selective growth process includes lateral growth of nitride material by a lateral epitaxial overgrowth (LEO), sidewall lateral epitaxial overgrowth (SLEO), cantilever epitaxy or nanomasking.
摘要翻译：一种用于半极性氮化物薄膜缺陷还原的横向生长方法。工艺步骤包括选择半极性氮化物平面和组成，选择用于生长半极性氮化物平面和组成的合适衬底，以及施加选择性生长工艺，其中半极性氮化物在其它区域的排除下成核在衬底的某些区域上其中选择性生长工艺包括通过横向外延过度生长（LEO），侧壁横向外延过度生长（SLEO），悬臂外延或纳米掩模的氮化物材料的侧向生长。

94. 发明申请

WO2013155188A1 APPARATUS USED FOR THE GROWTH OF GROUP-III NITRIDE CRYSTALS UTILIZING CARBON FIBER CONTAINING MATERIALS AND GROUP-III NITRIDE GROWN THEREWITH 审中-公开
标题翻译：用于生长含III族氮化物晶体的装置利用含有碳纤维的材料和III族硝酸盐
公开(公告)号：WO2013155188A1
公开(公告)日：2013-10-17
申请号：PCT/US2013/035983
申请日：2013-04-10
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , PIMPUTKAR, Siddha , VON DOLLEN, Paul , NAKAMURA, Shuji , SPECK, James S.
发明人： PIMPUTKAR, Siddha , VON DOLLEN, Paul , NAKAMURA, Shuji , SPECK, James S.
IPC分类号： C30B7/00
CPC分类号： C30B7/10 , C30B7/105 , C30B9/10 , C30B29/403 , Y10T117/1096
摘要： A method and apparatus for growing crystals in a reactor vessel, wherein the reactor vessel uses carbon fiber containing materials as a structural element to contain the materials for growing the crystals as a solid, liquid or gas within the reactor vessel, such that the reactor vessel can withstand pressures or temperatures necessary for the growth of the crystals. The carbon fiber containing materials encapsulate at least one component of the reactor vessel, wherein stresses from the encapsulated component are transferred to the carbon fiber containing materials. The carbon fiber containing materials may be wrapped around the encapsulated component one or more times sufficient to maintain a desired pressure differential between an exterior and interior of the encapsulated component.
摘要翻译：一种用于在反应器容器中生长晶体的方法和装置，其中反应器容器使用含碳纤维的材料作为结构元件，以容纳在反应器容器内作为固体，液体或气体生长晶体的材料，使得反应器容器可承受晶体生长所需的压力或温度。含碳纤维的材料包封反应器容器的至少一个组分，其中来自包封的组分的应力被转移到含碳纤维的材料中。含碳纤维的材料可以围绕包封的组分缠绕一次或多次，足以在包封的组分的外部和内部之间保持所需的压力差。

95. 发明申请

WO2013010117A1 GROWING A GROUP-III NITRIDE CRYSTAL USING A FLUX GROWTH AND THEN USING THE GROUP-III NITRIDE CRYSTAL AS A SEED FOR AN AMMONOTHERMAL RE-GROWTH 审中-公开
标题翻译：使用通量增长生长第III组氮化物晶体，然后使用III族氮化物晶体作为亚硝酸盐再生长的种子
公开(公告)号：WO2013010117A1
公开(公告)日：2013-01-17
申请号：PCT/US2012/046756
申请日：2012-07-13
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , PIMPUTKAR, Siddha , NAKAMURA, Shuji , SPECK, James S.
发明人： PIMPUTKAR, Siddha , NAKAMURA, Shuji , SPECK, James S.
IPC分类号： C30B9/00
CPC分类号： C30B7/105 , C30B9/12 , C30B29/403
摘要： A method of growing a Group-Ill nitride crystal using a flux growth, wherein a fluid containing at least one Group-Ill metal and at least one alkali metal is contained within a vessel and is subject to conditions that allow for the addition or removal of nitrogen to or from the fluid, and the fluid is brought into contact with one or more surfaces of a seed upon which the Group-Ill nitride crystal is grown. The present invention also discloses a method for using the Group-Ill nitride crystal grown using the flux based method as a seed for re-growth using an ammonothermal method.
摘要翻译：使用助熔剂生长生长III族氮化物晶体的方法，其中含有至少一种III族金属和至少一种碱金属的流体包含在容器内并且经受允许添加或除去氮气流入或流出流体，使流体与生长III-III族氮化物晶体的种子的一个或多个表面接触。本发明还公开了使用基于助熔剂的方法生长的III族氮化物晶体作为用于再热生长的种子的方法。

96. 发明申请

WO2011115950A1 AMMONOTHERMALLY GROWN GROUP-III NITRIDE CRYSTAL 审中-公开
公开(公告)号：WO2011115950A1
公开(公告)日：2011-09-22
申请号：PCT/US2011/028448
申请日：2011-03-15
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , PIMPUTKAR, Siddha , SPECK, James S. , NAKAMURA, Shuji
发明人： PIMPUTKAR, Siddha , SPECK, James S. , NAKAMURA, Shuji
IPC分类号： C30B25/00 , C01B21/06
CPC分类号： C30B7/105 , C30B29/403 , Y10T117/1096
摘要： A method for ammonothermally growing group-Ill nitride crystals using an initially off-oriented non-polar and/or semi-polar growth surface on a group-Ill nitride seed crystal. Group-III-containing source materials and group-Ill nitride seed crystals are placed into a vessel, wherein the seed crystals have one or more non-polar or semi-polar growth surfaces. Group-Ill nitride crystals are ammonothermally grown by filling the vessel with a nitrogen-containing solvent for dissolving the source materials and transporting a fluid comprised of the solvent with the dissolved source materials to the seed crystals for growth of the group-Ill nitride crystals on the seed crystals. The growth surfaces are initially off-oriented growth surfaces, wherein the growth surfaces are off-oriented m-plane or highly vicinal m-plane growth surfaces. The growth surfaces of the seed crystals may be created by cutting group-Ill nitride crystals at a desired angle with respect to an m-plane.
摘要翻译：使用在III族氮化物晶种上的最初偏离取向的非极性和/或半极性生长表面进行氨热生长的III族氮化物晶体的方法。将含III族的源材料和III族氮化物晶种放置在容器中，其中晶种具有一个或多个非极性或半极性生长表面。将III族氮化物晶体通过用含氮溶剂填充容器进行氨热生长，用于溶解源材料并将由溶剂构成的溶剂与溶解的源材料输送到用于晶体生长的III族氮化物晶体的晶种上晶种。生长表面最初是非取向的生长表面，其中生长表面是偏离取向的m面或高度连续的m面生长表面。晶种的生长表面可以通过相对于m平面以所需的角度切割III族氮化物晶体来产生。

97. 发明申请

WO2010053965A1 REACTOR DESIGNS FOR USE IN AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS 审中-公开
标题翻译：反应器设计用于III-III型氮化物晶体的热成型
公开(公告)号：WO2010053965A1
公开(公告)日：2010-05-14
申请号：PCT/US2009/063239
申请日：2009-11-04
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , PIMPUTKAR, Siddha , KAMBER, Derrick S. , SPECK, James S. , NAKAMURA, Shuji
发明人： PIMPUTKAR, Siddha , KAMBER, Derrick S. , SPECK, James S. , NAKAMURA, Shuji
IPC分类号： H01L21/00
CPC分类号： C30B7/105 , B01D9/0013 , B01D9/0031 , C30B7/10 , C30B29/40 , C30B29/403 , H01L21/67109 , Y10T117/1096 , Y10T428/24355
摘要： Reactor designs for use in ammonothermal growth of group-Ill nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-Ill nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group- III nitride crystals.
摘要翻译：用于III族氮化物晶体的氨热生长的反应器设计。内部加热用于增强和/或设计流体运动，气体混合以及在用于III族氮化物晶体的氨热生长的容器内产生溶解度梯度的能力。新型挡板设计用于控制和改进用于III族氮化物晶体的氨热生长的容器内的连续流体运动。

98. 发明申请

WO2010053964A1 NOVEL VESSEL DESIGNS AND RELATIVE PLACEMENTS OF THE SOURCE MATERIAL AND SEED CRYSTALS WITH RESPECT TO THE VESSEL FOR THE AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS 审中-公开
标题翻译：关于第III组氮化物晶体的高温生长的船舶材料和种子晶体的新型船舶设计和相对放置
公开(公告)号：WO2010053964A1
公开(公告)日：2010-05-14
申请号：PCT/US2009/063238
申请日：2009-11-04
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , PIMPUTKAR, Siddha , KAMBER, Derrick S. , SPECK, James S. , NAKAMURA, Shuji
发明人： PIMPUTKAR, Siddha , KAMBER, Derrick S. , SPECK, James S. , NAKAMURA, Shuji
IPC分类号： H01L21/00
CPC分类号： C30B7/105 , C30B29/403 , C30B29/406 , Y10T117/1024
摘要： Reactor designs for use in ammonothermal growth of group-Ill nitride crystals envision a different relative placement of source materials and seed crystals with respect to each other, and with respect to the vessel containing a solvent. This placement results in a difference in fluid dynamical flow patterns within the vessel.
摘要翻译：用于III族氮化物晶体的氨热生长的反应器设计设想了源材料和晶种相对于彼此以及相对于含有溶剂的容器的不同相对位置。该位置导致容器内的流体动力学流动模式的差异。

99. 发明申请

WO2010053963A1 CONTROLLING RELATIVE GROWTH RATES OF DIFFERENT EXPOSED CRYSTALLOGRAPHIC FACETS OF A GROUP-III NITRIDE CRYSTAL DURING THE AMMONOTHERMAL GROWTH OF A GROUP-III NITRIDE CRYSTAL 审中-公开
标题翻译：控制III-III型氮化物晶体的三元氮化镓晶体的不同暴露晶体生长面积的相对生长速率
公开(公告)号：WO2010053963A1
公开(公告)日：2010-05-14
申请号：PCT/US2009/063236
申请日：2009-11-04
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , PIMPUTKAR, Siddha , KAMBER, Derrick S. , SPECK, James S. , NAKAMURA, Shuji
发明人： PIMPUTKAR, Siddha , KAMBER, Derrick S. , SPECK, James S. , NAKAMURA, Shuji
IPC分类号： H01L21/00
CPC分类号： H01L21/0254 , C30B7/105 , C30B29/403 , C30B29/406 , H01L21/02609 , H01L21/02628 , Y10T117/1024
摘要： A method for controlling the relative and absolute growth rates of all possible crystallographic planes of a group-Ill nitride crystal during ammonothermal growth. The growth rates of the various exposed crystallographic planes of the group-Ill nitride crystal are controlled by modifying the environment and/or conditions within the reactor vessel, which may be subdivided into a plurality of separate zones, wherein each of the zones has their own environment and conditions. The environment includes the amount of atoms, compounds and/or chemical complexes within each of the zones, along with their relative ratios and the relative motion of the atoms, compounds and/or chemical complexes within each of the zones and among the zones. The conditions include the thermodynamic properties each of the zones possess, such as temperatures, pressures and/or densities.
摘要翻译：一种用于在氨热生长期间控制III族氮化物晶体的所有可能的结晶平面的相对和绝对生长速率的方法。通过改变反应器容器内的环境和/或条件来控制第III族氮化物晶体的各种暴露的结晶面的生长速率，该环境和/或条件可分为多个分开的区域，其中每个区域都有自己的区域环境和条件。环境包括每个区域内的原子，化合物和/或化学配合物的数量，以及它们的相对比例以及每个区域内和区域之间的原子，化合物和/或化学配合物的相对运动。条件包括每个区域具有的热力学性质，例如温度，压力和/或密度。

100. 发明申请

WO2010053960A1 USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS 审中-公开
标题翻译：在III类氮化物晶体的热成长期间使用含硼含量化合物，大分子和流体
公开(公告)号：WO2010053960A1
公开(公告)日：2010-05-14
申请号：PCT/US2009/063233
申请日：2009-11-04
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , PIMPUTKAR, Siddha , KAMBER, Derrick, S. , SPECK, James, S. , NAKAMURA, Shuji
发明人： PIMPUTKAR, Siddha , KAMBER, Derrick, S. , SPECK, James, S. , NAKAMURA, Shuji
IPC分类号： H01L21/00
CPC分类号： C30B7/105 , C30B29/403 , C30B29/406 , H01L21/0254 , H01L29/045 , H01L29/2003
摘要： Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-Ill nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-Ill nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group- Ill nitride into said fluid.
摘要翻译：在III族氮化物晶体的氨热生长过程中使用含硼化合物，气体和流体。在III族氮化物晶体的氨热生长期间，含硼化合物用作杂质吸附剂。此外，含硼气体和/或超临界流体用于提高第III族氮化物在所述流体中的溶解度。

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