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    • 96. 发明申请
    • TRANSMISSION LINE PRESUMING CIRCUIT AND MODEM USING THE SAME
    • 传输线路输出电路和使用该电路的调制解调器
    • WO1998023043A1
    • 1998-05-28
    • PCT/JP1996003443
    • 1996-11-22
    • MITSUBISHI DENKI KABUSHIKI KAISHASOGABE, YasushiAKIYOSHI, Masanori
    • MITSUBISHI DENKI KABUSHIKI KAISHA
    • H04B07/00
    • H04L25/0202H04B7/01H04B7/0408H04B17/391
    • The transmission line between the sending radio terminal (141) and the receiving radio terminal is geometrically modeled. Using the model of the transmission line, the transmission antenna (151) is located. Based on the result of location, the path is presumedly determined, and a transmission line of better state is selected for high quality communication. A geometric information inputting device (11) including an on-vehicle camera (120) geometrically captures information about the state of the circumference. A geometric information recognizing device (12) searches the captured geometric information for the transmission antenna (151) of the party and outputs the information about the position of the antenna (151). A model generating device (13) generates a transmission line model based on the geometric information from the device (11) and the information about the position of the antenna (151) from the device (12).
    • 发送无线电终端(141)和接收无线电终端之间的传输线被几何建模。 使用传输线的模型,定位发射天线(151)。 基于位置的结果,假设确定路径,并且为了高质量通信选择更好状态的传输线。 包括车载照相机(120)的几何信息输入装置(11)几何地捕获关于圆周状态的信息。 几何信息识别装置(12)搜索所捕获的几何信息用于该方的发送天线(151),并输出关于天线(151)的位置的信息。 模型生成装置(13)基于来自装置(11)的几何信息和关于来自装置(12)的天线(151)的位置的信息生成传输线模型。
    • 97. 发明申请
    • SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
    • 半导体器件及其制造方法
    • WO1998013881A1
    • 1998-04-02
    • PCT/JP1996002741
    • 1996-09-24
    • MITSUBISHI DENKI KABUSHIKI KAISHATOKUNOH, FutoshiTANAKA, YasuoSAKAMOTO, TokumitsuNAKASIMA, Nobuhisa
    • MITSUBISHI DENKI KABUSHIKI KAISHA
    • H01L29/744
    • H01L29/744H01L29/0661H01L29/74
    • A high withstand voltage semiconductor device, such as a gate turn-off thyristor, in which the surface field concentration at a main P-N junction is reduced. The semiconductor device comprises a low resistance layer (2) of a first conductivity type, a high resistance layer (1) of the first conductivity type disposed adjacent to the low resistance layer (2), and a low resistance layer (3) of a second conductivity type disposed adjacent to the high resistance layer (1) of the first conductivity type in such a manner as to interpose the high resistance layer (1) between the layers (2) and (3). The semiconductor device is flat, and its edges are beveled through the layers (2) and (1) on one side and through the layers (3) and (1) on the other side to increase section areas. The outer ends of the bevels (9, 11) are chamfered (10, 12) or given a predetermined radius of curvature.
    • 诸如栅极截止晶闸管的高耐压半导体器件,其中主P-N结处的表面场浓度降低。 半导体器件包括第一导电类型的低电阻层(2),邻近低电阻层(2)设置的第一导电类型的高电阻层(1)和低电阻层(3) 第二导电类型,其设置为与第一导电类型的高电阻层(1)相邻,以便在层(2)和(3)之间插入高电阻层(1)。 半导体器件是平坦的,并且其边缘在一侧通过层(2)和(1)并且通过另一侧上的层(3)和(1)而倾斜以增加截面积。 斜面(9,11)的外端被倒角(10,12)或给定预定的曲率半径。
    • 98. 发明申请
    • SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
    • 半导体器件及其制造方法
    • WO1998013862A1
    • 1998-04-02
    • PCT/JP1996002758
    • 1996-09-24
    • MITSUBISHI DENKI KABUSHIKI KAISHATAMAKI, MasahiroHAYASHI, KazuoTAKENO, Shozui
    • MITSUBISHI DENKI KABUSHIKI KAISHA
    • H01L21/301
    • H01L21/3043H01L21/78
    • A method of manufacturing a semiconductor device, comprising the steps of providing a semiconductor wafer (4a) including a semiconductor layer (1) having a plurality of functional devices (3) and isolation line regions for isolating the individual functional devices (3) by encompassing each of them; forming a metal layer (5) on the surface in the isolation line regions; bonding a reinforcing layer (21) to the surface of this semiconductor wafer (4a); selectively etching the reverse side of the semiconductor layer (1) to open holes (1b) penetrating through the semiconductor layer (1) and reaching the metal layer (5) in such a manner as to encompass each functional device (3); removing the reinforcing layer (21) from the semiconductor wafer (4a); and cutting the metal layer (5) by laser so that individually isolated semiconductor chips (10a) are formed.
    • 一种制造半导体器件的方法,包括以下步骤:提供半导体晶片(4a),该半导体晶片(4a)包括具有多个功能器件(3)的半导体层(1)和隔离各个功能器件(3)的隔离线区域, 他们每个人; 在隔离线区域的表面上形成金属层(5); 将加强层(21)接合到该半导体晶片(4a)的表面上; 选择性地蚀刻半导体层(1)的背面以打开贯穿半导体层(1)并且以覆盖每个功能器件(3)的方式到达金属层(5)的孔(1b); 从所述半导体晶片(4a)去除所述加强层(21); 以及通过激光切割金属层(5),从而形成单独隔离的半导体芯片(10a)。
    • 100. 发明申请
    • DATA CONVERSION APPARATUS AND DATA CONVERSION METHOD
    • 数据转换装置和数据转换方法
    • WO1997009705A1
    • 1997-03-13
    • PCT/JP1996002154
    • 1996-07-31
    • MITSUBISHI DENKI KABUSHIKI KAISHAMATSUI, MitsuruTOKITA, Toshio
    • MITSUBISHI DENKI KABUSHIKI KAISHA
    • G09C01/00
    • H04L9/0625H04L2209/122H04L2209/125
    • Input data (101) on A and input data (102) on B are processed. First nonlinear conversion is made for the input data (101) on side A with a first key parameter (111). The exclusive-OR of the result (109) of the first nonlinear conversion and the input data (102) on side B appears as intermediate input data (106) to a sub-conversion processing portion (122) of the next stage on side B, while the input data (102) on side B undergo the second nonlinear conversion with a second key parameter (112) in the sub-conversion processing portion of the next stage on side A. The exclusive-OR of the result of this second nonlinear conversion and the intermediate data (106) is input as the intermediate data (108) to the sub-conversion processing portion (123) of the next stage on side B. The structures described above are cascaded, and the intermediate data in the final stages on sides A and B form the converted output data (103 and 104).
    • 对A上的输入数据(101)和B上的输入数据(102)进行处理。 利用第一密钥参数(111)对A侧的输入数据(101)进行第一非线性转换。 在B侧的第一非线性转换结果(109)和输入数据(102)的异或作为中间输入数据(106)出现在B侧的下一级的子转换处理部分(122) 而侧B上的输入数据(102)在侧A的下一级的子转换处理部分中用第二关键参数(112)进行第二非线性转换。该第二非线性的结果的异或 转换和中间数据(106)作为中间数据(108)输入到B侧的下一级的子转换处理部分(123)。上述结构是级联的,最后阶段的中间数据 在侧面A和B上形成转换的输出数据(103和104)。