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1. 发明申请

WO2011064622A1 A DEVICE HAVING A CORROSION DETECTION FUNCTION AND A METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：具有腐蚀检测功能的装置及其制造方法
公开(公告)号：WO2011064622A1
公开(公告)日：2011-06-03
申请号：PCT/IB2009/055393
申请日：2009-11-27
申请人： NXP B.V. , HUMBERT, Aurelie , LAMBERT, Magali , PONOMAREV, Youri,Victorovitch , MERZ, Matthias , HOOFMAN, Romano
发明人： HUMBERT, Aurelie , LAMBERT, Magali , PONOMAREV, Youri,Victorovitch , MERZ, Matthias , HOOFMAN, Romano
IPC分类号： G01D5/34 , G01M11/08 , G01N17/00 , G01N17/04
CPC分类号： G01N17/04 , G01D5/34 , G01N21/774 , G01N2021/7773
摘要： A device (100) comprising a substrate (102) having a corrodible material, a grating (104) formed on and/or in the substrate (102), an electromagnetic radiation source (106) formed on and/or in the substrate (102) and adapted for directing an electromagnetic radiation beam (108) onto the grating (104), an electromagnetic radiation detector (110) formed on and/or in the substrate (102) and adapted for detecting the electromagnetic radiation beam (108) after interaction with the grating (104), and an evaluation unit (112) formed on and/or in the substrate (100) and adapted for evaluating a corrosion state of the corrodible material based on the detected electromagnetic radiation beam (108).
摘要翻译：一种包括具有可腐蚀材料的衬底（102），形成在衬底（102）上和/或衬底（102）中的光栅（104）的器件（100），形成在衬底（102）和/或衬底（102）上的电磁辐射源）并且适于将电磁辐射束（108）引导到光栅（104）上，电磁辐射检测器（110）形成在衬底（102）上和/或衬底（102）上并且适于在相互作用之后检测电磁辐射束（108）与所述光栅（104）和形成在所述基板（100）上和/或所述基板（100）中并且适于基于所检测的电磁辐射束（108）评估所述可腐蚀材料的腐蚀状态的评估单元（112）。

2. 发明申请

WO2009047715A1 LOW-POWER DICKSON CHARGE PUMP 审中-公开
标题翻译：低功率DICKSON充电泵
公开(公告)号：WO2009047715A1
公开(公告)日：2009-04-16
申请号：PCT/IB2008/054120
申请日：2008-10-08
申请人： NXP B.V. , PONOMAREV, Youri Victorovitch , HUMBERT, Aurelie , HOOFMAN, Romano , CURATOLA, Gilberto , PIJNENBURG, Remco Henricus Wilhelmus , MERZ, Matthias
发明人： PONOMAREV, Youri Victorovitch , HUMBERT, Aurelie , HOOFMAN, Romano , CURATOLA, Gilberto , PIJNENBURG, Remco Henricus Wilhelmus , MERZ, Matthias
IPC分类号： H02M3/07
CPC分类号： H02M3/073
摘要： A charge pump (400) has a concatenation of a plurality of stages. Each stage has a current path between a stage input and a stage output. The stages have their current paths connected in series. Each pair of adjacent stages has their current paths complementarily controlled using two clock signals (Φi, Φ2) in anti-phase. Each stage has a capacitor (116, 118, 120, 122) connected between the stage output (126, 128) and one of the clock lines (123, 125). Each stage has a FET (402, 404, 406, 408) whose channel forms part of the current path. Each FET has two gate electrodes controlled by the clock signals (Φi, Φ2) so as to increase its threshold voltage when the current channel is controlled to be blocking.
摘要翻译：电荷泵（400）具有多级的级联。每个阶段在舞台输入和舞台输出之间具有电流路径。这些阶段的电流路径串联。每对相邻级的电流路径使用反相的两个时钟信号（Fi，F2）进行互补控制。每个级具有连接在级输出（126,128）和一个时钟线（123,125）之间的电容器（116,118,120,122）。每个级具有其通道形成电流路径的一部分的FET（402,404,406,408）。每个FET具有由时钟信号（Fi，F2）控制的两个栅电极，以便当当前通道被控制为阻塞时增加其阈值电压。

3. 发明申请

WO2009138893A1 SENSOR CALIBRATION IN AN RFID TAG 审中-公开
标题翻译： RFID标签中的传感器校准
公开(公告)号：WO2009138893A1
公开(公告)日：2009-11-19
申请号：PCT/IB2009/051758
申请日：2009-04-30
申请人： NXP B.V. , HUMBERT, Aurelie , CURATOLA, Gilberto , MERZ, Matthias , PIJNENBURG, Remco Henricus Wilhelmus , HOOFMAN, Romano , PONOMAREV, Youri
发明人： HUMBERT, Aurelie , CURATOLA, Gilberto , MERZ, Matthias , PIJNENBURG, Remco Henricus Wilhelmus , HOOFMAN, Romano , PONOMAREV, Youri
IPC分类号： G01D18/00 , G01K15/00
CPC分类号： G01D18/008 , G01K1/024 , G01K3/04 , G01K15/00
摘要： A sensor, electrically connected to transponder, is calibrated in an environment of operational use of the transponder. The calibrating uses as a reference a value of a parameter representative of the environment.
摘要翻译：电连接到应答器的传感器在应答器的操作使用环境中被校准。校准用作参考代表环境的参数的值。

4. 发明申请

WO2009016594A3 HUMIDITY SENSOR BASED ON PROGRESSIVE CORROSION OF EXPOSED MATERIAL 审中-公开
公开(公告)号：WO2009016594A3
公开(公告)日：2009-02-05
申请号：PCT/IB2008/053059
申请日：2008-07-30
申请人： NXP B.V. , HUMBERT, Aurelie , PONOMAREV, Youri, Victorovitch , MERZ, Matthias , HOOFMAN, Romano
发明人： HUMBERT, Aurelie , PONOMAREV, Youri, Victorovitch , MERZ, Matthias , HOOFMAN, Romano
IPC分类号： G01N17/04 , G01N27/12
摘要： A sensor senses a characteristic of an environment, e.g., humidity. The sensor has a substrate with strips of material that is sensitive to corrosion as a result of the characteristic. The strips are configured to respond differently to the characteristic. By means of repeatedly measuring the resistances of the strips, the environment can be monitored in terms of accumulated exposure to the characteristic. The strips are manufactured in a semiconductor technology so as to generate accurate sensors that behave predictably.

5. 发明申请

WO2008056295A1 A SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THEREOF 审中-公开
标题翻译：一种半导体器件及其制造方法
公开(公告)号：WO2008056295A1
公开(公告)日：2008-05-15
申请号：PCT/IB2007/054385
申请日：2007-10-29
申请人： NXP B.V. , HUMBERT, Aurelie , HOOFMAN, Romano
发明人： HUMBERT, Aurelie , HOOFMAN, Romano
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532
CPC分类号： H01L21/7682 , H01L21/76825 , H01L21/76831 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： The invention relates to a semiconductor device comprising: a substrate (1), the substrate (1) comprising a body (5), the body (5) having a surface, the substrate (1) being provided with an insulating layer (10) on the surface of the body (l); - a conductor (25) with insulating sidewall spacers (22) located in the insulating layer (10), the conductor (25) having a current-flow direction during operation, the conductor (25) having a first width, the insulating sidewall spacers (22) each having a second width being smaller than the first width of the conductor (25), the first width and the second width being measured in a direction perpendicular to the current-flow direction of the conductor (25) and parallel to said surface, the conductor (25) having a first top surface extending parallel to said surface, the insulating sidewall spacers (22) having a second top surface, and airgaps (30) located in the insulating layer (10) adjacent to the insulating sidewall spacers (22), characterized in that the first top surface coincides with the second top surface, and in that the airgaps (30) extend from the surface of the body (5) to said first and second top surface. The invention further relates to a method of manufacturing such a semiconductor device. The semiconductor device according to the invention enables a lower resistance of the conductor while still providing a tolerance for unlanded vias.
摘要翻译：本发明涉及一种半导体器件，包括：衬底（1），所述衬底（1）包括主体（5），所述主体（5）具有表面，所述衬底（1）设置有绝缘层（10）在身体表面（l）; - 导体（25），其具有位于所述绝缘层（10）中的绝缘侧壁间隔物（22），所述导体（25）在操作期间具有电流流动方向，所述导体（25）具有第一宽度，所述绝缘侧壁间隔件（22），每个具有小于所述导体（25）的第一宽度的第二宽度，所述第一宽度和所述第二宽度在垂直于所述导体（25）的电流流动方向的方向上测量并平行于所述导体所述导体（25）具有平行于所述表面延伸的第一顶表面，所述绝缘侧壁间隔件（22）具有第二顶表面，以及位于所述绝缘层（10）中邻近所述绝缘侧壁间隔件（22），其特征在于，所述第一顶表面与所述第二顶表面重合，并且所述气隙（30）从所述主体（5）的表面延伸到所述第一和第二顶表面。本发明还涉及一种制造这种半导体器件的方法。根据本发明的半导体器件使得导体的电阻较低，同时仍然提供对未经过过孔的容差。

6. 发明申请

WO2010046845A1 WIRELESS INTERCONNECT FOR AN INTEGRATED CIRCUIT 审中-公开
标题翻译：一体化电路的无线互连
公开(公告)号：WO2010046845A1
公开(公告)日：2010-04-29
申请号：PCT/IB2009/054611
申请日：2009-10-20
申请人： NXP B.V. , HOOFMAN, Romano
发明人： HOOFMAN, Romano
IPC分类号： H01Q1/40 , H01Q21/28 , H01L23/48
CPC分类号： H01Q1/40 , H01L23/66 , H01L25/0657 , H01L2223/6677 , H01L2225/06531 , H01L2225/06565 , H01L2924/0002 , H01Q21/28 , H01L2924/00
摘要： A wireless interconnect for an integrated circuit and a method of making the wireless interconnect. The interconnect includes a first antenna and a second antenna arranged over a plurality of electrically conductive interconnects. The interconnect also includes a propagation layer. The first and second antennae are arranged in between the propagation layer and the electrically conductive interconnects.
摘要翻译：用于集成电路的无线互连和制造无线互连的方法。互连包括布置在多个导电互连上的第一天线和第二天线。互连还包括传播层。第一和第二天线布置在传播层和导电互连之间。

7. 发明申请

WO2008084440A1 METHOD OF FORMING AN INTERCONNECT STRUCTURE 审中-公开
标题翻译：形成互连结构的方法
公开(公告)号：WO2008084440A1
公开(公告)日：2008-07-17
申请号：PCT/IB2008/050049
申请日：2008-01-08
申请人： NXP B.V. , ERNUR, Didem , HOOFMAN, Romano , NGUYEN HOANG, Viet
发明人： ERNUR, Didem , HOOFMAN, Romano , NGUYEN HOANG, Viet
IPC分类号： H01L21/768 , H01L23/532
CPC分类号： H01L21/7682 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of forming an interconnect structure for a semiconductor device involving etching patterns of openings (18, 22) in a layer (12) of thermally decomposable filler material and forming either pillars (8) of dielectric 5 material or conductive interconnections in respective patterns of openings. The filler material is subsequently decomposed to form cavities (30) between the pillars and adjacent interconnections, so that air forms the dielectric material therebetween.
摘要翻译：一种形成用于半导体器件的互连结构的方法，包括蚀刻可热分解填料的层（12）中的开口（18,22）的图案，并形成介电材料的任何柱（8）或导电互连开口。填料随后被分解以在柱和相邻互连之间形成空腔（30），使得空气在它们之间形成电介质材料。

8. 发明申请

WO2010013214A1 SENSING ENVIRONMENTAL PARAMETER THROUGH STRESS INDUCED IN IC 审中-公开
标题翻译：通过IC中诱发的应力感测环境参数
公开(公告)号：WO2010013214A1
公开(公告)日：2010-02-04
申请号：PCT/IB2009/053321
申请日：2009-07-30
申请人： NXP B.V. , HOOFMAN, Romano , PIJNENBURG, Remco, Henricus, Wilhelmus , PONOMAREV, Youri, Victorovitch
发明人： HOOFMAN, Romano , PIJNENBURG, Remco, Henricus, Wilhelmus , PONOMAREV, Youri, Victorovitch
IPC分类号： G01D5/18
CPC分类号： G01D5/18
摘要： A sensor is provided for sensing a value of a physical parameter characteristic of the sensor's environment. The sensor is implemented in semiconductor technology. A behavior of the sensor's electronic circuitry is affected by stress. The stress is induced by a film covering the circuitry or only part thereof. The stress is caused by the film's material, whose dimensions depend on a value of the parameter. This dependence is different from the 5 dependence of the circuitry's substrate on the same parameter.
摘要翻译：提供了用于感测传感器环境的物理参数特性值的传感器。传感器采用半导体技术实现。传感器的电子电路的行为受到压力的影响。应力由覆盖电路或仅部分的膜引起。压力是由胶片材料造成的，其尺寸取决于参数值。这种依赖性不同于电路衬底对相同参数的依赖性。

9. 发明申请

WO2009144618A1 INTEGRATED CIRCUIT MANUFACTURING METHOD AND INTEGRATED CIRCUIT 审中-公开
标题翻译：集成电路制造方法和集成电路
公开(公告)号：WO2009144618A1
公开(公告)日：2009-12-03
申请号：PCT/IB2009/052084
申请日：2009-05-19
申请人： NXP B.V. , ERNUR, Didem , HOOFMAN, Romano
发明人： ERNUR, Didem , HOOFMAN, Romano
IPC分类号： H01L21/768 , H01L23/485
CPC分类号： H01L21/7682 , H01L24/03 , H01L24/05 , H01L2224/05073 , H01L2224/05147 , H01L2224/05556 , H01L2224/05558 , H01L2224/05568 , H01L2224/05624 , H01L2924/00014 , H01L2924/0002 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/14 , H01L2224/05552
摘要： The present invention discloses an integrated circuit (IC) comprising a bond pad (160); a substrate stack carrying a first layer (130) comprising conductive regions (135); and an interconnect layer (140) over the first layer (130) comprising a dielectric material portion (400) between the bond pad (160) and the substrate stack, said portion comprising a plurality of air- filled trenches (345) defining at least one pillar (340) of the dielectric material (400), at least said air- filled trenches (345) being capped by a porous capping layer (440). The interconnect layer (140), which typically is one of the uppermost interconnect layers of the IC, has an improved resilience to pressure exerted on the bond pad (160). The present invention further teaches a method for manufacturing such an IC.
摘要翻译：本发明公开了一种包括接合焊盘（160）的集成电路（IC）。承载包括导电区域（135）的第一层（130）的衬底叠层; 以及在所述第一层（130）之上的包括所述接合焊盘（160）和所述衬底叠层之间的电介质材料部分（400）的互连层（140），所述部分包括至少限定了多个空气填充的沟槽（345）介电材料（400）的一个支柱（340），至少所述空气填充的沟槽（345）被多孔封盖层（440）封盖。通常是IC的最上层互连层之一的互连层（140）具有改善的对施加在接合焊盘（160）上的压力的弹性。本发明进一步教导了制造这种IC的方法。

10. 发明申请

WO2009150558A1 INTRUSION PROTECTION USING STRESS CHANGES 审中-公开
标题翻译：使用压力变化的侵入保护
公开(公告)号：WO2009150558A1
公开(公告)日：2009-12-17
申请号：PCT/IB2009/052184
申请日：2009-05-26
申请人： NXP B.V. , HOOFMAN, Romano , PIJNENBURG, Remco Henricus Wilhelmus , PONOMAREV, Youri Victorovitch
发明人： HOOFMAN, Romano , PIJNENBURG, Remco Henricus Wilhelmus , PONOMAREV, Youri Victorovitch
IPC分类号： G06F21/00 , H01L23/58 , G06K19/073
CPC分类号： H01L23/576 , G06F21/87 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a integrated circuit comprising an electronic circuit integrated on a substrate (5), and further comprising protections means for protection of the electronic circuit (25). The protection means comprise: i) a first strained encapsulation layer (10) being provided on a first side of the substrate (5), wherein the first strained encapsulation layer (10) has a strain (Sl) in a direction parallel to the substrate (5), and ii) disabling means (20) arranged for at least partially disabling the electronic circuit (25) under control of a strain change in the substrate (5). The invention further relates to a method of manufacturing such integrated circuit, and to a system comprising such integrated circuit. Such system is selected from a group comprising: a bank-card, a smart-card, a contact-less card and an RFID. All embodiments of the integrated circuit in accordance with the invention provide essentially an alternative tamper protection to the data stored or present in the electronic circuit therein. A first main group of embodiments concerns an integrated circuit wherein tamper protection is obtained by detecting a strain change during tampering and subsequently disabling the electronic circuit. A second main group of embodiments concerns an integrated circuit wherein tamper protection is obtained by designing a stack of strained encapsulation layers, such that tampering causes releasing of strain and thereby mechanical disintegrate (break, delaminate, etc) of the integrated circuit, and thus disabling the electronic circuit.
摘要翻译：本发明涉及一种集成电路，其包括集成在基板（5）上的电子电路，并且还包括用于保护电子电路（25）的保护装置。保护装置包括：i）第一应变封装层（10），设置在基板（5）的第一侧上，其中第一应变封装层（10）在平行于基板的方向上具有应变（S1）（5），以及ii）布置成在所述衬底（5）中的应变变化的控制下至少部分地禁用所述电子电路（25）的禁用装置（20）。本发明还涉及一种制造这种集成电路的方法，以及包括这种集成电路的系统。这样的系统从包括银行卡，智能卡，无接触卡和RFID的组中选择。根据本发明的集成电路的所有实施例基本上为存储或存在于其中的电子电路中的数据提供了替代的篡改保护。第一主要实施例涉及集成电路，其中通过在篡改期间检测应变变化并随后禁用电子电路来获得篡改保护。第二主要实施例涉及一种集成电路，其中通过设计应变封装层的堆叠来获得防篡改，使得篡改导致应变释放，从而导致集成电路的机械分解（破坏，分层等），从而导致无效电子电路。

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