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1. 发明申请

WO2008095146A3 SOLAR CELL ABSORBER LAYER FORMED FROM METAL ION PRECURSORS 审中-公开
公开(公告)号：WO2008095146A3
公开(公告)日：2008-08-07
申请号：PCT/US2008/052730
申请日：2008-01-31
申请人： VAN DUREN, Jeroen, K.J. , ROBINSON, Matthew, R. , SAGER, Brian, M.
发明人： VAN DUREN, Jeroen, K.J. , ROBINSON, Matthew, R. , SAGER, Brian, M.
IPC分类号： H01L31/04
摘要： Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a solution on a substrate to form a precursor layer. The solution comprises of at least one polar solvent, at least one binder, and at least one Group IB and/or IIIA hydroxide. The precursor layer is processed in one or more steps to form a photovoltaic absorber layer. In one embodiment, the absorber layer may be created by processing the precursor layer into a solid film and then thermally reacting the solid film in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. Optionally, the absorber layer may be processed by thermal reaction of the precursor layer in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer.

2. 发明申请

WO2007101099A2 HIGH-THROUGHPUT PRINTING OF CHALCOGEN LAYER AND THE USE OF AN INTER-METALLIC MATERIAL 审中-公开
标题翻译： CHALCOGEN层的高通量印刷和金属间材料的使用
公开(公告)号：WO2007101099A2
公开(公告)日：2007-09-07
申请号：PCT/US2007/062694
申请日：2007-02-23
申请人： VAN DUREN, Jeroen, K.j. , LEIDHOLM, Craig, R. , ROBINSON, Matthew, R.
发明人： VAN DUREN, Jeroen, K.j. , LEIDHOLM, Craig, R. , ROBINSON, Matthew, R.
CPC分类号： C23C18/1283 , C23C18/1204 , C23C18/1225 , C23C18/1241 , C23C18/127 , H01L31/0322 , H01L31/06 , H01L31/0749 , H01L31/18 , Y02E10/541
摘要： Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA- chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, wherein the precursor layer comprises one or more discrete layers. The layers may include at least a first layer containing one or more group IB elements and two or more different group IDA elements and at least a second layer containing elemental chalcogen particles. The precursor layer may be heated to a temperature sufficient to melt the chalcogen particles and to react the chalcogen particles with the one or more group IB elements and group IDA elements in the precursor layer to form a film of a group IB-IIIA- chalcogenide compound. At least one set of the particles in the precursor layer are inter-metallic particles containing at least one group IB-IIIA inter-metallic alloy phase. The method may also include making a film of group IB-IIIA- chalcogenide compound that includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.
摘要翻译：公开了用于形成IB-III族 - 硫族化合物化合物的膜的前体材料的高通量印刷的方法和装置。在一个实施例中，该方法包括在衬底上形成前体层，其中前体层包含一个或多个离散层。这些层可以包括至少包含一个或多个IB族元件和两个或更多个不同组IDA元件的第一层和至少包含元素硫族元素颗粒的第二层。可以将前体层加热到足以熔化硫族元素颗粒的温度，并使硫族元素颗粒与前体层中的一种或多种IB族元素和基团IDA元素反应以形成IB-III族 - 硫族化合物化合物。前体层中至少有一组颗粒是含有至少一个IB-IIIA族金属间相合金相的金属间颗粒。该方法还可以包括制备IB-III族 - 硫族化合物化合物的膜，其包括混合纳米颗粒和/或纳米金属和/或纳米质子以形成油墨，将油墨沉积在基材上，加热以熔化额外的硫属元素并进行反应具有IB族和IIIA族元素和/或硫族化物的硫族化合物以形成致密膜。

3. 发明申请

WO2009051862A2 SEMICONDUCTOR THIN FILMS FORMED FROM NON-SPHERICAL PARTICLES 审中-公开
标题翻译：从非球形颗粒形成的半导体薄膜
公开(公告)号：WO2009051862A2
公开(公告)日：2009-04-23
申请号：PCT/US2008/067569
申请日：2008-06-19
申请人： VAN DUREN, Jeroen, K.J. , ROBINSON, Matthew, R. , LEIDHOLM, Craig, R. , SAGER, Brian, M.
发明人： VAN DUREN, Jeroen, K.J. , ROBINSON, Matthew, R. , LEIDHOLM, Craig, R. , SAGER, Brian, M.
IPC分类号： H01L31/042 , H01L21/36
CPC分类号： H01L31/1864 , C23C18/08 , C23C18/1204 , C23C18/1275 , C23C18/1287 , H01L21/02565 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/0322 , H01L31/0352 , H01L31/04 , H01L31/1876 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily,, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.
摘要翻译：提供了用于在合适的条件下在合适的载体中转化非平面或平面前体材料的方法和装置，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在选择性力沉降之后。特别地，平面颗粒更容易分散，形成更致密的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。这些平面颗粒可以是具有高纵横比的纳米片。由纳米片形成的致密膜特别适用于形成光电器件。在一个实施例中，油墨中的至少一组颗粒可以是含有至少一种IB-IIIA族的金属间片状微粒（微花纹或纳米薄片）金属间合金相。

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