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1. 发明授权

US5310512A Method for producing synthetic diamond structures 失效
标题翻译：生产合成金刚石结构的方法
公开(公告)号：US5310512A
公开(公告)日：1994-05-10
申请号：US614313
申请日：1990-11-15
申请人： Louis K. Bigelow
发明人： Louis K. Bigelow
IPC分类号： C30B28/00 , C23C16/01 , C23C16/26 , C23C16/27 , C30B29/04 , B28B1/02 , B28B7/30
CPC分类号： C23C16/276 , C23C16/01
摘要： Method and apparatus for producing a non-planar synthetic diamond structure of predetermined shape. A non-planar mandrel surface of the predetermined shape is provided and the mandrel surface is coated with a release substance. Synthetic diamond is deposited on the coating of release substance. The release substance is then activated to effect release of the deposited synthetic diamond structure. In a disclosed embodiment of the method of the invention a dome-shaped hollow mandrel is coated with a metal-containing substance, and synthetic diamond is deposited over the coating using a plasma jet deposition process. The metal containing substance is then heated to release the resultant diamond structure from the mandrel. In a form of the disclosed method, the metal-containing substance is a metal alloy which is highly polished before deposition of synthetic diamond thereon. The step of depositing synthetic diamond may include varying the deposition conditions during the depositing of diamond to obtain layers of diamond having different properties. In an embodiment of the apparatus of the invention, means are provided for rotating the mandrel in a deposition chamber, and means are also provided for moving the deposition system in the chamber, such as in an arc over the rotatable mandrel.
摘要翻译：用于制造具有预定形状的非平面合成金刚石结构的方法和装置。提供了预定形状的非平面芯棒表面，并且心轴表面涂覆有释放物质。合成金刚石沉积在释放物质的涂层上。然后使释放物质被活化以实现沉积的合成金刚石结构的释放。在本发明的方法的公开实施例中，圆顶状中空心轴涂覆有含金属物质，并且使用等离子体喷射沉积工艺将合成金刚石沉积在涂层上。然后加热含金属物质以从心轴释放所得到的金刚石结构。以所公开的方法的形式，含金属物质是在其上沉积合成金刚石之前被高度抛光的金属合金。沉积合成金刚石的步骤可以包括在沉积金刚石期间改变沉积条件以获得具有不同性质的金刚石层。在本发明的设备的一个实施例中，提供了用于在沉积室中旋转心轴的装置，并且还提供了用于将腔室中的沉积系统移动到诸如可旋转心轴上的电弧的装置。

2. 发明授权

US07895872B2 Method of producing nanocrystalline monolithic articles 有权
标题翻译：制造纳米晶体整体制品的方法
公开(公告)号：US07895872B2
公开(公告)日：2011-03-01
申请号：US11381387
申请日：2006-05-03
申请人： James B. Mann , Srinivasan Chandrasekar , Walter Dale Compton
发明人： James B. Mann , Srinivasan Chandrasekar , Walter Dale Compton
IPC分类号： B21D43/28 , B21K27/06 , C21D9/00 , C30B28/00
CPC分类号： B21C23/001 , B22F1/0044 , B22F9/04 , B22F2009/046 , B22F2998/10 , B22F2999/00 , B82Y30/00 , C21D7/02 , C22C38/02 , C22C38/04 , C22C38/06 , C22C38/42 , C22C38/44 , C22C38/46 , C22C38/52 , B22F1/0085 , B22F3/14
摘要： A products having at least a portion thereof with a nanocrystalline microstructure, and methods of producing such products. The method generally entails machining a body to produce a polycrystalline chip having a nanocrystalline microstructure. The chips produced by the machining operation may be in the form of particulates, ribbons, wires, filaments and/or platelets. The chips may be consolidated (with or without comminution) to form a product, such that the product is essentially a nanocrystalline monolithic material consisting essentially or entirely of nano-crystals, or of grains grown from nano-crystals. Alternatively, the chips may be dispersed in a matrix material, such that the product is a composite material in which the chips are dispersed as a reinforcement material. According to a particular aspect, a monolithic article can be formed entirely from a single chip by deforming the chip and/or removing material from the chip.
摘要翻译：具有至少一部分具有纳米晶体微结构的产品，以及生产这种产品的方法。该方法通常需要机械加工以制造具有纳米晶体微结构的多晶片。通过加工操作生产的碎屑可以是颗粒，带状物，丝，丝和/或血小板的形式。芯片可以被固结（有或没有粉碎）以形成产品，使得产品基本上是由纳米晶体或由纳米晶体生长的晶粒基本上或全部组成的纳米晶体整体材料。或者，芯片可以分散在基质材料中，使得该产品是其中芯片作为增强材料分散的复合材料。根据具体方面，通过使芯片变形和/或从芯片上去除材料，整体制品可以由单个芯片完全形成。

3. 发明授权

US07763223B2 Method for manufacturing porous silica crystal 失效
标题翻译：多孔二氧化硅晶体的制造方法
公开(公告)号：US07763223B2
公开(公告)日：2010-07-27
申请号：US11662059
申请日：2005-09-12
申请人： Shuji Noda , Takanobu Shiomura , Masahiro Tajima , Naoto Imawaka , Yasuaki Okamoto , Takeshi Kubota
发明人： Shuji Noda , Takanobu Shiomura , Masahiro Tajima , Naoto Imawaka , Yasuaki Okamoto , Takeshi Kubota
IPC分类号： C01B33/12 , C30B28/00 , B01D9/02
CPC分类号： C01B37/02 , C30B7/00 , C30B7/10 , C30B29/16
摘要： In a synthetic method for porous silica crystals through a hydrothermal reaction, a method for synthesizing porous silica crystals with a size of 0.5 mm or larger in high reproducibility and efficiency is provided using a method for manufacturing the porous silica crystals, wherein a high concentration area with silicon is formed as a partial area inside a hydrothermal synthesis vessel, and at least a part of a surface-smoothed bulk material is present in the high concentration area with silicon to perform the hydrothermal reaction, the bulk material comprising a compound containing both silicon and oxygen as a supply source for a part or a whole of the structure composition elements of the porous silica crystals.
摘要翻译：在通过水热反应的多孔二氧化硅晶体的合成方法中，使用多孔二氧化硅晶体的制造方法，提供以高重现性和效率合成尺寸为0.5mm以上的多孔二氧化硅晶体的方法，其中高浓度区域其中硅在水热合成容器内形成为部分区域，并且至少部分表面平滑的散装材料在硅的高浓度区域中存在以进行水热反应，该散装材料包含含硅的化合物氧作为多孔二氧化硅结晶的结构组成元素的一部分或全部的供给源。

4. 发明授权

US09376750B2 Method of depositing an inorganic film on an organic polymer 有权
标题翻译：在有机聚合物上沉积无机膜的方法
公开(公告)号：US09376750B2
公开(公告)日：2016-06-28
申请号：US10482627
申请日：2002-07-16
申请人： Steven M. George , John D. Ferguson , Alan W. Weimar , Christopher A. Wilson
发明人： Steven M. George , John D. Ferguson , Alan W. Weimar , Christopher A. Wilson
IPC分类号： C30B28/00 , C23C16/44 , B01J31/06 , B82Y30/00 , C08J7/04 , C23C16/02 , C23C16/14 , C23C16/34 , C23C16/40 , C23C16/442 , C23C16/455 , C09D1/00 , H01L51/52
摘要： Inorganic materials are deposited onto organic polymers using ALD methods. Ultrathin, conformal coatings of the inorganic materials can be made in this manner. The coated organic polymers can be used as barrier materials, as nanocomposites, as catalyst supports, in semiconductor applications, in coating applications as well as in other applications.
摘要翻译：使用ALD方法将无机材料沉积到有机聚合物上。可以以这种方式制造无机材料的超薄，保形涂层。涂覆的有机聚合物可以用作阻挡材料，作为纳米复合材料，作为催化剂载体，在半导体应用中，在涂覆应用中以及在其它应用中。

5. 发明申请

US20110172605A1 MICRONEEDLE, MICRONEEDLE ARRAY AND PRODUCTION METHOD THEREFOR 有权
标题翻译： MICRONEEDLE，MICRONEEDLE ARRAY及其生产方法
公开(公告)号：US20110172605A1
公开(公告)日：2011-07-14
申请号：US13001349
申请日：2009-06-24
申请人： Johan Willem Berenschot , Jeroen Mathijn Wissink , Niels Roelof Tas , Meint Jelle DeBoer
发明人： Johan Willem Berenschot , Jeroen Mathijn Wissink , Niels Roelof Tas , Meint Jelle DeBoer
IPC分类号： A61M5/00 , C30B28/00
CPC分类号： A61M37/0015 , A61M2037/003 , A61M2037/0046 , A61M2037/0053 , B81B2201/055
摘要： The present invention provides a microneedle, comprising a shaft of a monocrystalline material having at least three was which are formed by a crystal plane of the monocrystalline material; and a tip connected to an end of the shaft comprising at least three walls which are formed by a crystal plane of the material. The material is preferably silicon. Two of the walls of the tip are formed by the same crystal planes as two walls of the shaft. These two walls are formed by a crystal plane. Preferably, three walls of the tip are formed by a crystal plane.
摘要翻译：本发明提供了一种微针，其包括由单晶材料的晶面形成的具有至少三个的单晶材料的轴; 以及连接到所述轴的端部的尖端，包括由所述材料的晶面形成的至少三个壁。该材料优选为硅。尖端的两个壁由与轴的两个壁相同的晶体平面形成。这两个壁由<111>晶面形成。优选地，尖端的三个壁由<111>晶面形成。

6. 发明授权

US6103010A Method of depositing a ferromagnetic film on a waveguide and a magneto-optic component comprising a thin ferromagnetic film deposited by the method 失效
标题翻译：在波导上沉积铁磁膜的方法和包括通过该方法沉积的薄铁磁膜的磁光部件
公开(公告)号：US6103010A
公开(公告)日：2000-08-15
申请号：US931827
申请日：1997-09-16
申请人： Christian Belouet
发明人： Christian Belouet
IPC分类号： C30B28/00 , C23C14/22 , G02F1/095 , H01F10/24 , H01F10/28 , H01F41/16 , H01F41/18 , G02B6/10 , C23C14/08 , C23C14/24 , C23C14/54
CPC分类号： H01F41/18 , G02F1/0955 , H01F10/28 , H01F41/186
摘要： A thin ferromagnetic film is deposited directly onto the surface of a waveguide. The crystalline orientation of the ferromagnetic film is restricted to a predetermined orientation by pulverizing nuclei that do not have the predetermined orientation.
摘要翻译：薄的铁磁膜直接沉积在波导的表面上。铁磁膜的结晶取向通过粉碎不具有预定取向的核而限制在预定取向。

7. 发明申请

US20090280050A1 Apparatus and Methods for Casting Multi-Crystalline Silicon Ingots 审中-公开
标题翻译：铸造多晶硅锭的设备和方法
公开(公告)号：US20090280050A1
公开(公告)日：2009-11-12
申请号：US12428535
申请日：2009-04-23
申请人： Kramadhati V. Ravi , Hans J. Walitzki
发明人： Kramadhati V. Ravi , Hans J. Walitzki
IPC分类号： C01B33/02 , B01D9/00 , C30B28/00
CPC分类号： B01J6/007 , C30B11/003 , C30B28/06 , C30B29/06
摘要： Apparatuses and methods for making a multi-crystalline silicon ingot by directional solidification comprising two or more moveable heat shields located beneath the crucible, the heat shields being opened in a controlled manner to remove heat and produce a high quality silicon ingot.
摘要翻译：通过定向凝固制造多晶硅锭的装置和方法，包括位于坩埚下方的两个或更多个可移动的隔热罩，热屏蔽以受控的方式打开以除去热量并产生高质量的硅锭。

8. 发明申请

US20070261631A1 Method for Growing Epitaxial Crystal 有权
标题翻译：生长外延晶体的方法
公开(公告)号：US20070261631A1
公开(公告)日：2007-11-15
申请号：US11661696
申请日：2005-06-06
申请人： Manabu Kawabe , Ryuichi Hirano
发明人： Manabu Kawabe , Ryuichi Hirano
IPC分类号： C30B28/00
CPC分类号： C30B25/20 , C30B25/16 , C30B29/40 , H01L21/02392 , H01L21/02433 , H01L21/02543 , H01L21/02576
摘要： It is to provide a method for growing an epitaxial crystal in which the doping conditions are set when an epitaxial crystal having a desired carrier concentration is grown. A method for growing an epitaxial crystal while a dopant is added to a compound semiconductor substrate, comprises: obtaining a relation between an off angle and a doping efficiency with regards to the same type of compound semiconductor substrate in advance; and setting a doping condition for carrying out an epitaxial growth on the compound semiconductor substrate based on the obtained relation and a value of the off angle of the substrate.
摘要翻译：提供一种生长外延晶体的方法，其中当生长具有所需载流子浓度的外延晶体时，其中设置掺杂条件。一种将掺杂剂添加到化合物半导体衬底中的生长外延晶体的方法包括：预先获得关于相同类型的化合物半导体衬底的偏角和掺杂效率之间的关系; 以及基于获得的关系和基板的偏离角的值，在化合物半导体基板上设定用于进行外延生长的掺杂条件。

9. 发明授权

US5620511A Method for preparing a preform for a composite material 失效
标题翻译：制备复合材料预成型件的方法
公开(公告)号：US5620511A
公开(公告)日：1997-04-15
申请号：US563101
申请日：1995-11-27
申请人： Junsu Kim , Bumgoo Chung
发明人： Junsu Kim , Bumgoo Chung
IPC分类号： B22D19/14 , B29B11/16 , C04B14/32 , C04B35/80 , C22C47/00 , C22C47/02 , C22C47/06 , C22C47/08 , C30B25/00 , C30B28/00
CPC分类号： C30B25/005 , C30B29/36
摘要： Disclosed in this invention is a method of preparing a whisker-preform comprising the steps of (a) uniformly dispersing a mixture of silicon microparticles and carbon fibers in the ratio of 4:1 to 8:1 into aluminium alkoxide solution; (b) filtering the dispersion obtained in step (a), dehydrating the filtered material, forming and drying the dehydrated material; and (c) heating the material dried in step (b) at a temperature in the range of 300.degree. to 400.degree. C.
摘要翻译：在本发明中公开了一种制备晶须预成型体的方法，其包括以下步骤：（a）将硅微粒和碳纤维的混合物以4:1至8:1的比例均匀分散到烷氧基铝溶液中; （b）过滤步骤（a）中获得的分散体，使过滤材料脱水，形成和干燥脱水材料; 和（c）在300-400℃的温度下加热在步骤（b）中干燥的材料。

10. 发明授权

US11111573B2 Component and semiconductor manufacturing device 有权
公开(公告)号：US11111573B2
公开(公告)日：2021-09-07
申请号：US16777371
申请日：2020-01-30
申请人： KYOCERA CORPORATION
发明人： Takashi Hino , Tetsuo Inoue , Shuichi Saito
IPC分类号： C23C14/08 , H01L21/3065 , C30B25/10 , C30B25/00 , C30B28/12 , C30B28/14 , C30B29/16 , C30B29/02 , C30B28/00 , C30B29/22
摘要： A component includes a film containing polycrystalline yttrium oxide. In an X-ray diffraction pattern of the film, a ratio Im/Ic of a maximum intensity Im of a peak attributed to monoclinic yttrium oxide to a maximum intensity Ic of a peak attributed to cubic yttrium oxide satisfies an expression: 0≤Im/Ic≤0.002.

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