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1. 发明授权

US11092936B2 Machine control device, machine control program, and machine control method 有权
公开(公告)号：US11092936B2
公开(公告)日：2021-08-17
申请号：US16345268
申请日：2017-10-27
申请人： RESONEST CORPORATION
发明人： Hirotoshi Maegawa , Keiko Ikemoto , Akira Sassa
IPC分类号： G05B13/04 , C30B13/28 , C30B15/22 , G05B13/02
摘要： A machine control device is configured to include a measurement unit that measures regarding a state of a controlled object handled by a machine apparatus, a determination unit that determines a constraint determination value by comparing the measurement result by the measurement unit with a predetermined constraint condition, control units and that perform operation control for the machine apparatus based on the constraint determination value determined by the determination unit according to the relationship set for the constraint determination value and the operation control, and a learning unit that reconfigures the relationship between the constraint determination value and the operation control when the constraint determination value changes due to the operation control performed by the control units.

2. 发明授权

US10763544B1 Solid electrolyte with low-symmetry garnet-related structure and lithium-ion secondary battery 有权
公开(公告)号：US10763544B1
公开(公告)日：2020-09-01
申请号：US16304231
申请日：2017-05-02
申请人： National Institute of Advanced Industrial Science and Technology
发明人： Naoki Hamao , Kunimitsu Kataoka , Junji Akimoto
IPC分类号： H01M10/0562 , H01M10/0525 , C30B13/28 , C30B29/30 , C01G35/00
摘要： A solid electrolyte material having high ion conductivity and a all-solid-state lithium-ion secondary battery using this solid electrolyte material are provided. The solid electrolyte material has a garnet-related structure crystal represented by the chemical composition Li7−x−yLa3Zr2−x−yTaxNbyO12 (0.05≤x+y≤0.2, x≥0, y≥0), which belongs to an orthorhombic system and a space group belonging to Ibca. The solid electrolyte material has lithium-ion conductivity at 25° C. of at least 1.0×10−4 S/cm. Also, in this solid electrolyte material, the lattice constants are 1.29 nm≤a≤1.32 nm, 1.26 nm≤b≤1.29 nm, and 1.29 nm≤c≤1.32 nm, and three 16f sites and one 8d site in the crystal structure are occupied by lithium-ions. The all-solid-state lithium-ion secondary battery has a positive electrode, a negative electrode, and a solid electrolyte, the solid electrolyte comprising this solid electrolyte material.

3. 发明授权

US08545623B2 Method and apparatus for controlling the growth process of a monocrystalline silicon ingot 有权
标题翻译：用于控制单晶硅锭生长过程的方法和装置
公开(公告)号：US08545623B2
公开(公告)日：2013-10-01
申请号：US12456552
申请日：2009-06-18
申请人： Benno Orschel , Keiichi Takanashi
发明人： Benno Orschel , Keiichi Takanashi
IPC分类号： C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04 , C30B35/00 , C30B13/28 , C30B15/20 , C30B15/26
CPC分类号： C30B29/06 , C30B15/26 , G01B11/08 , G06T7/12 , G06T2207/30148 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： The present invention provides a method and apparatus for controlling the growth of a silicon ingot in which the diameter of the growing silicon ingot can be accurately measured. A camera captures an image of the interface ring between the growing silicon ingot and the silicon melt. An image processor extracts local intensity maxima from the captured image, which are then digitized into an image data which comprises attributes of the pixels forming the local intensity maxima. An analyzer statistically analyzes the image data to derive parameters of an equation statistically simulating the interface ring. A probabilistic filter conducts the statistical analysis on the equation in which the respective pixels are weighted by their weight factors. The weight factor functions to attenuate the effect of noises caused by pixels which do not represent the interface ring. The statistical analysis may be repeated, using the renewed parameters, to progressively attenuate the effect of the noises to thereby obtain a satisfactorily accurate diameter of the silicon ingot.
摘要翻译：本发明提供了一种用于控制硅锭生长的方法和装置，其中可以精确地测量生长的硅锭的直径。相机捕获生长的硅锭和硅熔体之间的界面环的图像。图像处理器从捕获的图像中提取局部强度最大值，然后数字化为包括形成局部强度最大值的像素的属性的图像数据。分析仪统计分析图像数据，得出统计模拟界面环的方程式的参数。概率滤波器对各个像素的权重因子加权的方程进行统计分析。权重因子用于衰减由不表示接口环的像素引起的噪声的影响。可以使用更新的参数重复统计分析来逐渐衰减噪声的影响，从而获得令人满意的硅锭的精确直径。

4. 发明授权

US08192544B2 Apparatus for manufacturing poly crystaline silicon ingot for solar battery having door open/close device using hinge 有权
标题翻译：用于制造具有使用铰链的门打开/关闭装置的用于太阳能电池的聚晶硅锭的装置
公开(公告)号：US08192544B2
公开(公告)日：2012-06-05
申请号：US12245727
申请日：2008-10-04
申请人： Jong-Won Gil , Sang-Jin Moon , Won-Wook So
发明人： Jong-Won Gil , Sang-Jin Moon , Won-Wook So
IPC分类号： C30B13/28 , C30B15/30
CPC分类号： F27B17/0016 , C30B11/002 , C30B11/003 , C30B28/06 , C30B29/06 , F27B14/04 , F27B14/14 , F27B14/20 , F27B17/0075 , F27D99/0006 , F27D2099/0015 , Y02P10/253 , Y10T117/10 , Y10T117/1008 , Y10T117/1016
摘要： Disclosed herein is an apparatus for manufacturing a polycrystalline silicon ingot for solar batteries having a door control device using a hinge. The apparatus includes a vacuum chamber, a crucible, a susceptor which surrounds the crucible, a heater which heats the crucible, and an insulation plate which is disposed below the susceptor and has an opening therein. The apparatus further includes a cooling plate which moves upwards through the opening of the insulation plate and comes into close contact with or approaches the lower end of the susceptor, a cooling plate moving unit which actuates the cooling plate, a temperature sensor which measures the temperature of the crucible, and a control unit which controls the temperature in the crucible and the cooling plate moving unit. Furthermore, a door is provided on the insulation plate to open or close the opening of the insulation plate. The hinge is provided between the door and the insulation plate. Thus, after the raw silicon material is melted, when the cooling plate moves upwards to cool the crucible and thus pushes the lower surface of the door upwards, the door is opened by the hinge in a swinging manner, and when the cooling plate approaches or comes into contact with the lower end of the susceptor, one end of the opened door is leaned on a corresponding surface of the cooling plate.
摘要翻译：本文公开了一种用于制造具有使用铰链的门控制装置的太阳能电池用多晶硅锭的装置。该设备包括真空室，坩埚，围绕坩埚的基座，加热坩埚的加热器和设置在基座下方并在其中具有开口的绝缘板。该装置还包括一个冷却板，该冷却板向上移动通过绝缘板的开口并与基座的下端紧密接触或接近基座的下端，一个驱动冷却板的冷却板移动单元，一个测量温度的温度传感器的坩埚和控制单元，其控制坩埚和冷却板移动单元中的温度。此外，在绝缘板上设置门，以打开或关闭绝缘板的开口。铰链设在门与绝缘板之间。因此，在原料硅熔化之后，当冷却板向上移动以冷却坩埚并因此向上推动门的下表面时，门以铰链方式摆动地打开门，当冷却板接近或与基座的下端接触，打开的门的一端倾斜在冷却板的相应表面上。

5. 发明申请

US20090090296A1 APPARATUS FOR MANUFACTURING POLY CRYSTALINE SILICON INGOT FOR SOLAR BATTERY HAVING DOOR OPEN/CLOSE DEVICE USING HINGE 有权
标题翻译：用于使用铰链制造具有门打开/关闭装置的太阳能电池的聚晶硅硅胶的装置
公开(公告)号：US20090090296A1
公开(公告)日：2009-04-09
申请号：US12245727
申请日：2008-10-04
申请人： Jong-Won Gil , Sang-On Moon , Won-Wook So
发明人： Jong-Won Gil , Sang-On Moon , Won-Wook So
IPC分类号： C30B35/00 , C30B13/20 , C30B13/28 , F27B14/04 , F27B14/06
CPC分类号： F27B17/0016 , C30B11/002 , C30B11/003 , C30B28/06 , C30B29/06 , F27B14/04 , F27B14/14 , F27B14/20 , F27B17/0075 , F27D99/0006 , F27D2099/0015 , Y02P10/253 , Y10T117/10 , Y10T117/1008 , Y10T117/1016
摘要： Disclosed herein is an apparatus for manufacturing a polycrystalline silicon ingot for solar batteries having a door control device using a hinge. The apparatus includes a vacuum chamber, a crucible, a susceptor which surrounds the crucible, a heater which heats the crucible, and an insulation plate which is disposed below the susceptor and has an opening therein. The apparatus further includes a cooling plate which moves upwards through the opening of the insulation plate and comes into close contact with or approaches the lower end of the susceptor, a cooling plate moving unit which actuates the cooling plate, a temperature sensor which measures the temperature of the crucible, and a control unit which controls the temperature in the crucible and the cooling plate moving unit. Furthermore, a door is provided on the insulation plate to open or close the opening of the insulation plate. The hinge is provided between the door and the insulation plate. Thus, after the raw silicon material is melted, when the cooling plate moves upwards to cool the crucible and thus pushes the lower surface of the door upwards, the door is opened by the hinge in a swinging manner, and when the cooling plate approaches or comes into contact with the lower end of the susceptor, one end of the opened door is leaned on a corresponding surface of the cooling plate.
摘要翻译：本文公开了一种用于制造具有使用铰链的门控制装置的太阳能电池用多晶硅锭的装置。该设备包括真空室，坩埚，围绕坩埚的基座，加热坩埚的加热器和设置在基座下方并在其中具有开口的绝缘板。该装置还包括一个冷却板，该冷却板向上移动通过绝缘板的开口并与基座的下端紧密接触或接近基座的下端，一个驱动冷却板的冷却板移动单元，一个测量温度的温度传感器的坩埚和控制单元，其控制坩埚和冷却板移动单元中的温度。此外，在绝缘板上设置门，以打开或关闭绝缘板的开口。铰链设在门与绝缘板之间。因此，在原料硅熔化之后，当冷却板向上移动以冷却坩埚并因此向上推动门的下表面时，门以铰链方式摆动地打开门，当冷却板接近或与基座的下端接触，打开的门的一端倾斜在冷却板的相应表面上。

6. 发明授权

US06899761B2 Single crystals of lead magnesium niobate-lead titanate 失效
标题翻译：铅镁铌酸铅钛酸铅单晶
公开(公告)号：US06899761B2
公开(公告)日：2005-05-31
申请号：US10380232
申请日：2001-09-12
申请人： Elgin E. Eissler
发明人： Elgin E. Eissler
IPC分类号： C30B29/30 , C30B11/00 , C30B29/32 , G01S7/521 , H04R17/00 , C30B13/02 , C30B13/14 , C30B13/16 , C30B13/28
CPC分类号： C30B29/30 , C30B11/00 , C30B29/32
摘要： A method of making a single crystal of lead magnesium niobate-lead titanate (PMN-PT). The method includes providing a flat-bottomed iridium crucible containing PMN-PT starting material, and placing the crucible into a vertical Bridgman furnace having at least two temperature zones, which is subsequentially pressured with an inert gas. The crucible then descends into the temperature zones of the vertical Bridgman furnace. The temperature zones of the vertical Bridgman furnace include a first temperature zone having a temperature higher than a melting temperature of the PMN-PT material and a second temperature zone having a temperature less than the melting temperature of the PMN-PT material. The single crystals of the PMN-PT prepared using the above-described method exhibits a [110] crystal orientation and may be used in electroacoustic transducers. The electroacoustic transducers are useful in devices that detect or generate acoustic waves.
摘要翻译：制备铌酸铅镁钛酸铅（PMN-PT）的单晶的方法。该方法包括提供含有PMN-PT起始材料的平底铱坩埚，并将坩埚放置在具有至少两个温度区域的垂直布里奇曼炉中，所述温度区域用惰性气体进行后续加压。然后坩埚下降到垂直布里奇曼炉的温度区。垂直布里奇曼炉的温度区域包括温度高于PMN-PT材料的熔融温度的第一温度区域和具有低于PMN-PT材料的熔融温度的温度的第二温度区域。使用上述方法制备的PMN-PT的单晶具有[110]晶体取向并可用于电声换能器中。电声换能器可用于检测或产生声波的装置。

7. 发明授权

US6444028B2 Charging material and holding system for the charging material 失效
标题翻译：充电材料的充电材料和保持系统
公开(公告)号：US6444028B2
公开(公告)日：2002-09-03
申请号：US85122901
申请日：2001-05-08
申请人： WACKER CHEMIE GMBH
发明人： FRAUENKNECHT AXEL , SCHANTZ MATTHAEUS , BEER VIKTOR
IPC分类号： C30B29/06 , C30B13/08 , C30B13/28 , C30B15/02 , C30B15/36 , C30B35/00
CPC分类号： C30B15/02 , C30B13/08 , C30B13/285 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： A charging material made from semiconductor material, is used for charging or recharging a melting crucible during the Czochralski crucible-pulling process. This charging material has a polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue, which rods are coupled by means of a tongue-and-groove connection. There is also a holding system for holding a polycrystalline silicon rod during the Czochralski crucible-pulling process or the float zone process, which has a tongue-and-groove connection between the polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue.
摘要翻译：由半导体材料制成的充电材料用于在切克劳斯基坩埚拉拔过程中对熔化坩埚进行充电或再充电。该充电材料具有一端具有凹槽的多晶硅半导体棒和一端具有舌状物的单晶半导体棒，这些棒通过榫槽连接而联接。还有一种在切克劳斯基坩埚拉拔过程或浮区过程中保持多晶硅棒的保持系统，其在一端具有凹槽的多晶半导体棒之间具有榫槽连接，单晶半导体棒，其一端具有舌头。

8. 发明授权

US4619811A Apparatus for growing GaAs single crystal by using floating zone 失效
标题翻译：通过使用浮动区域生长GaAs单晶的装置
公开(公告)号：US4619811A
公开(公告)日：1986-10-28
申请号：US777004
申请日：1985-09-17
申请人： Jun-ichi Nishizawa
发明人： Jun-ichi Nishizawa
IPC分类号： C25D11/04 , C30B13/00 , C30B13/08 , C30B13/20 , C30B29/42 , H01L21/18 , C30B13/28 , C30B35/00
CPC分类号： C30B13/20 , C30B13/00 , C30B13/08 , C30B29/42 , Y10T117/1008 , Y10T117/1088
摘要： An apparatus for growing a GaAs single crystal by relying on the floating zone technique in a cylinder charged with a GaAs polycrystal and a GaAs single seed crystal, comprising an As container communicating with the interior of the cylinder to supply an optimum vapor pressure of As into the cylinder under the condition that a continuous temperature variation is established between this As container and the GaAs crystals charged in the cylinder, whereby a GaAs single crystal having little deviation from stoichiometry and having a good crystal perfection is obtained.
摘要翻译：通过依靠浮置区技术在装有GaAs多晶体和GaAs单晶种的圆柱体中生长GaAs单晶的装置，包括与气缸内部连通的As容器，以将As的最佳蒸气压提供给在该As容器和装载在气缸中的GaAs晶体之间建立连续的温度变化的条件下，获得具有与化学计量偏差小并且具有良好的晶体完整性的GaAs单晶。

9. 再颁专利

USRE30863E Method for crucible-free zone meeting of semiconductor crystal rods 失效
标题翻译：半导体晶体棒无坩埚区会议的方法
公开(公告)号：USRE30863E
公开(公告)日：1982-02-09
申请号：US778587
申请日：1977-03-17
申请人： Wolfgang Keller
发明人： Wolfgang Keller
IPC分类号： C30B13/00 , C30B13/28 , C30B29/06 , H01L21/208
CPC分类号： C30B13/285 , Y10T117/1084
摘要： Polycrystalline semiconductor rods are converted to dislocation-free monocrystal rods by positioning a polycrystalline rod within a crucible-free zone melt environment with a seed crystal attached to one end thereof, generating a melt zone at the juncture of the seed crystal and the polycrystalline rod, controllably moving the melt zone away from the juncture and through the polycrystalline rod to a select point thereon, uniformly supporting the cone-shaped lower portion of the rod being processed so as to prevent oscillations and the like at the juncture of the rod in the seed crystal and controllably moving the melt zone from the select point to the remainder of the rod. A uniform support is preferably provided by an axially movable funnel-shaped casing which is attached to the seed crystal holding member and which, when moved into its operating position, is filled with a self-adjusting oscillation or vibration dampening means, such as molten metal, metal spheroids, quartz particles, sand, etc.

10. 发明授权

US4292487A Method for initiating the float zone melting of semiconductors 失效
标题翻译：引发半导体浮选区熔化的方法
公开(公告)号：US4292487A
公开(公告)日：1981-09-29
申请号：US128997
申请日：1980-03-10
申请人： Noel De Leon
发明人： Noel De Leon
IPC分类号： C30B13/20 , C30B13/28 , H01L21/02 , H01L21/208 , H05B6/30
CPC分类号： C30B13/28 , Y10T117/1088
摘要： An improved method for initiating the inductive heating of semiconductors in the float zone refining process in which the oscillator circuit generating the required radio frequency energy is initially powered from a constant current source thereby controlling the rate of temperature rise for the semiconductor.
摘要翻译：在浮动区精炼过程中用于启动半导体的感应加热的改进方法，其中产生所需射频能量的振荡电路最初由恒流源供电，从而控制半导体的升温速率。

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