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    • 9. 发明申请
    • Apparatus and method for treating susbtrates
    • 用于治疗感染的装置和方法
    • US20050153557A1
    • 2005-07-14
    • US11036865
    • 2005-01-13
    • Chan-Woo ChoJae-Phil BooMyung-Seok KimJong-Muk KangIk-Joo KimJung-Hwan SungKi-Hong JungKeon-Sik Seo
    • Chan-Woo ChoJae-Phil BooMyung-Seok KimJong-Muk KangIk-Joo KimJung-Hwan SungKi-Hong JungKeon-Sik Seo
    • B24B37/013B24B37/04B24B49/03H01L21/304H01L21/306H01L21/302H01L21/461
    • B24B49/03B24B37/013B24B37/042
    • The present invention relates to a polishing apparatus for polishing a workpiece such as a semiconductor wafer to a flat mirror finish, and more particularly to a polishing apparatus having a workpiece transfer robot for transferring a workpiece from one operation to the next. The polishing apparatus according to the present invention comprises a polishing section including a top ring for holding a workpiece to be polished and a turntable having a polishing surface for polishing a surface of the workpiece held by the top ring; a cleaning section including a cleaning device for cleaning the workpiece that has been polished in the polishing section; and a workpiece transfer robot for transferring the workpiece to be polished to the polishing section or for transferring the workpiece that has been polished to the cleaning section. In this case, the workpiece transfer robot comprises a robot body; at least one arm operatively coupled to the robot body by at least one joint; a holder mechanism mounted on the arm for holding the workpiece; and a seal mechanism at the joint for preventing liquid from entering an interior of the joint, the seal mechanism
    • 本发明涉及一种用于将诸如半导体晶片的工件抛光到平面镜面抛光的抛光装置,更具体地涉及具有用于将工件从一个操作传送到下一个操作的工件传送机器人的抛光装置。 根据本发明的抛光装置包括抛光部分,其包括用于保持待抛光工件的顶环和具有抛光表面的转台,用于抛光由顶环保持的工件的表面; 清洁部,其包括用于清洁在所述研磨部中被抛光的所述工件的清洁装置; 以及工件传送机器人,用于将要抛光的工件传送到抛光部分或用于将已抛光的工件传送到清洁部分。 在这种情况下,工件传送机器人包括机器人主体; 至少一个臂通过至少一个接头可操作地联接到所述机器人主体; 安装在所述臂上用于保持所述工件的保持器机构; 和密封机构,用于防止液体进入接头的内部,密封机构
    • 10. 发明授权
    • Method of producing semiconductor wafers
    • 半导体晶片的制造方法
    • US5975990A
    • 1999-11-02
    • US759023
    • 1996-12-02
    • Hanifi Malcok
    • Hanifi Malcok
    • B24B1/00B24B7/22B24B47/22B24B49/03B28D1/00B28D5/02H01L21/304B24B49/10
    • B28D5/028B24B47/22B24B49/03B24B7/228B28D1/003
    • A method for producing semiconductor wafers is by a repeated sequence of grinding the end face of a monocrystal using a grinding tool and cutting a semiconductor wafer having a thickness from the monocrystal using a cutting tool, a grinding abrasion of a specified depth being produced during grinding and the semiconductor wafer being cut in a cutting plane which is as parallel as possible to the ground end face. The method includes (a) simultaneously grinding a part of the surface of an auxiliary body, to produce a ground surface of the auxiliary body and the end face of the monocrystal lying substantially in one plane and the thickness of the material abraded from the auxiliary body by grinding being substantially equal to the grinding abrasion; (b) cutting into the auxiliary body in the cutting plane using the cutting tool and producing a cut section which has a ground part and an unground part, and (c) determining the grinding abrasion, either (1) as the distance between the ground surface of the auxiliary body and the surface of the auxiliary body before grinding, or (2) as the difference in the thickness of the cut section in the unground part and the thickness of the semiconductor wafer.
    • 制造半导体晶片的方法是通过使用研磨工具对单晶的端面进行研磨的重复顺序,并使用切削工具从单晶切割具有厚度的半导体晶片,在研磨期间产生规定深度的研磨磨损 并且半导体晶片在切割平面中被切割,切割平面尽可能平行于接地端面。 该方法包括:(a)同时研磨辅助体的一部分表面,以产生辅助体的接地表面和基本上在一个平面中的单晶的端面,并且从辅助体磨损的材料的厚度 通过磨削基本上等于研磨磨损; (b)使用切割工具在切割平面中切割成辅助体,并产生具有磨削部分和未磨削部分的切割部分,以及(c)确定研磨磨损,(1)作为地面之间的距离 研磨前的辅助体的表面和辅助体的表面,或者(2)作为未研磨部的切断部的厚度和半导体晶片的厚度的差。