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1. 发明授权

US07348600B2 Nitride semiconductor device, and its fabrication process 有权
标题翻译：氮化物半导体器件及其制造工艺
公开(公告)号：US07348600B2
公开(公告)日：2008-03-25
申请号：US10687768
申请日：2003-10-20
申请人： Yukio Narukawa , Isamu Niki , Axel Scherer , Koichi Okamoto , Yoichi Kawakami , Mitsuru Funato , Shigeo Fujita
发明人： Yukio Narukawa , Isamu Niki , Axel Scherer , Koichi Okamoto , Yoichi Kawakami , Mitsuru Funato , Shigeo Fujita
IPC分类号： H01L21/15
CPC分类号： H01L33/24 , B82Y20/00 , H01S5/0213 , H01S5/3202 , H01S5/3203 , H01S5/34333 , H01S2304/12
摘要： The invention provides a nitride semiconductor light-emitting device comprising gallium nitride semiconductor layers formed on a heterogeneous substrate, wherein light emissions having different light emission wavelengths or different colors are given out of the same active layer. Recesses 106 are formed by etching in the first electrically conductive (n) type semiconductor layer 102 formed on a substrate with a buffer layer interposed between them. Each recess is exposed in plane orientations different from that of the major C plane. For instance, the plane orientation of the A plane is exposed. An active layer is grown and joined on the plane of this plane orientation, on the bottom of the recess and the C-plane upper surface of a non-recess portion. The second electrically conductive (p) type semiconductor layer is formed on the inner surface of the recess. With the active layer formed contiguously to the semiconductor layer in two or more plane orientations, a growth rate difference gives rise to a difference in the thickness across the quantum well (active layer), giving out light emissions having different light emission wavelength peaks or different colors.
摘要翻译：本发明提供了一种氮化物半导体发光器件，其包括形成在异质衬底上的氮化镓半导体层，其中具有不同发光波长或不同颜色的发光具有相同的有源层。凹槽106通过在衬底上形成的第一导电（n）型半导体层102中蚀刻形成，其中缓冲层位于它们之间。每个凹槽以与主C平面不同的平面取向曝光。例如，A平面的平面取向被暴露。活性层生长并在该平面取向的平面上，在凹部的底部和非凹部的C面上表面上接合。第二导电（p）型半导体层形成在凹部的内表面上。由于活性层以两个或多个平面取向与半导体层连续形成，所以生长速率差导致量子阱（有源层）上的厚度差异，发出具有不同发光波长峰值或不同的发光波长峰值颜色。

2. 发明授权

US07671373B2 LED chip package structure using a ceramic material as a substrate and a method for manufacturing the same 有权
标题翻译：使用陶瓷材料作为基板的LED芯片封装结构及其制造方法
公开(公告)号：US07671373B2
公开(公告)日：2010-03-02
申请号：US11976478
申请日：2007-10-25
申请人： Bily Wang , Jonnie Chuang , Chia-Hung Chen
发明人： Bily Wang , Jonnie Chuang , Chia-Hung Chen
IPC分类号： H01L29/267 , H01L21/15 , H01L29/26 , H01L31/12 , H01L29/16 , H01L29/18 , H01L29/22 , H01L29/24 , H01L25/16
CPC分类号： H01L25/0753 , H01L33/486 , H01L2224/48091 , H01L2224/48247 , H01L2924/09701 , H01L2924/00014
摘要： An LED chip package structure using a ceramic material as a substrate includes a ceramic substrate, a conductive unit, a hollow ceramic casing, a plurality of LED chips, and a package colloid. The ceramic substrate has a main body, and a plurality of protrusions extended from three faces of the main body. The conductive unit has a plurality of conductive layers formed on the protrusions, respectively. The hollow casing is fixed on a top face of the main body to form a receiving space for exposing a top face of each conductive layer. The LED chips are received in the receiving space, and each LED chip has a positive electrode side and a negative electrode side respectively and electrically connected to different conductive layers. In addition, the packaging colloid is filled into the receiving space for covering the LED chips.
摘要翻译：使用陶瓷材料作为基板的LED芯片封装结构包括陶瓷基板，导电单元，中空陶瓷外壳，多个LED芯片和封装胶体。陶瓷基板具有主体和从主体的三个面延伸的多个突起。导电单元具有分别形成在突起上的多个导电层。中空壳体固定在主体的顶面上，以形成用于暴露每个导电层顶面的容纳空间。 LED芯片被接收在接收空间中，并且每个LED芯片分别具有正极侧和负极侧，并且电连接到不同的导电层。此外，将包装胶体填充到用于覆盖LED芯片的接收空间中。

3. 发明授权

US06897483B2 Second gallium nitride layers that extend into trenches in first gallium nitride layers 有权
标题翻译：第二氮化镓层延伸到第一氮化镓层中的沟槽中
公开(公告)号：US06897483B2
公开(公告)日：2005-05-24
申请号：US10426553
申请日：2003-04-30
申请人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
发明人： Tsvetanka Zheleva , Darren B. Thomson , Scott A. Smith , Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
IPC分类号： C30B29/38 , H01L21/20 , H01L21/205 , H01S5/02 , H01L31/0312 , H01L21/15
CPC分类号： H01L21/0265 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/021 , H01S2304/12
摘要： A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.
摘要翻译：氮化镓层横向生长成氮化镓层中的沟槽，从而形成横向氮化镓半导体层。然后可以在横向氮化镓半导体层中形成至少一个微电子器件。位错缺陷不会横向显着传播到横向氮化镓半导体层中，使得侧向氮化镓半导体层相对无缺陷。

4. 发明授权

US08253146B2 LED die having heat dissipation layers 失效
标题翻译： LED芯片具有散热层
公开(公告)号：US08253146B2
公开(公告)日：2012-08-28
申请号：US12888398
申请日：2010-09-22
申请人： Tzu-Chien Hung , Chia-Hui Shen , Chih-Pang Ma
发明人： Tzu-Chien Hung , Chia-Hui Shen , Chih-Pang Ma
IPC分类号： H01L21/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/20 , H01L33/385 , H01L33/647 , H01L2224/48247 , H01L2224/8592
摘要： An LED die includes a multi-layer semiconductor with a first surface, a second surface opposite to the first surface, an inclined plane connecting to the first surface and the second surface, a first electrode and a second electrode respectively positioned on the first surface and the second surface, a first heat dissipation layer made of electrically-insulating and thermally conductive material being coated on the first surface and the inclined plane with a first opening exposing the first electrode, and a second heat dissipation layer made of electrically and thermally conductive material being coated on the first heat dissipation layer and contacting and electrically connecting with the first electrode.
摘要翻译： LED管芯包括具有第一表面的多层半导体，与第一表面相对的第二表面，连接到第一表面和第二表面的倾斜平面，分别位于第一表面上的第一电极和第二电极，所述第二表面，由绝缘导热材料制成的第一散热层涂覆在所述第一表面和所述倾斜平面上，具有暴露所述第一电极的第一开口和由导电和导热材料制成的第二散热层被涂覆在第一散热层上并与第一电极接触并电连接。

5. 发明授权

US08101442B2 Method for manufacturing EL display device 有权
标题翻译：制造EL显示装置的方法
公开(公告)号：US08101442B2
公开(公告)日：2012-01-24
申请号：US12390264
申请日：2009-02-20
申请人： Hidekazu Miyairi , Shigeki Komori , Toshiyuki Isa , Atsushi Umezaki
发明人： Hidekazu Miyairi , Shigeki Komori , Toshiyuki Isa , Atsushi Umezaki
IPC分类号： H01L21/00 , H01L21/04 , H01L21/14 , H01L21/15 , H01L31/036
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/3262
摘要： A manufacture process of a thin film transistor mounted on an EL display device is simplified. A thin film transistor is manufactured by stacking a first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film; forming a first resist mask over the stacked films; performing first etching to form a thin-film stack body; performing second etching by side etching is conducted on the thin-film stack body to form a gate electrode layer; and forming a source and drain electrode layer and the like with use of a second resist mask. An EL display device is manufactured using the thin film transistor.
摘要翻译：安装在EL显示装置上的薄膜晶体管的制造工艺简化。通过堆叠第一导电膜，绝缘膜，半导体膜，杂质半导体膜和第二导电膜来制造薄膜晶体管; 在堆叠的膜上形成第一抗蚀剂掩模; 执行第一蚀刻以形成薄膜堆叠体; 在薄膜堆叠体上进行侧蚀刻进行第二蚀刻，形成栅电极层; 以及使用第二抗蚀剂掩模形成源极和漏极电极层等。使用薄膜晶体管制造EL显示装置。

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