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1. 发明授权

US08847198B2 Light emitting devices with built-in chromaticity conversion and methods of manufacturing 有权
标题翻译：具有内置色度转换和制造方法的发光装置
公开(公告)号：US08847198B2
公开(公告)日：2014-09-30
申请号：US13116366
申请日：2011-05-26
申请人： Cem Basceri , Thomas Gehrke , Charles M. Watkins
发明人： Cem Basceri , Thomas Gehrke , Charles M. Watkins
IPC分类号： H01L29/06 , H01L33/50 , H01L33/08 , H01L33/38
CPC分类号： H01L33/0075 , H01L33/005 , H01L33/06 , H01L33/08 , H01L33/38 , H01L33/502 , H01L33/508 , H01L2933/0033 , H01L2933/0041
摘要： Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.
摘要翻译：本文描述了具有内置色度转换和相关制造方法的发光器件的各种实施例。在一个实施例中，制造发光器件的方法包括依次在衬底材料上形成第一半导体材料，有源区和第二半导体材料，所述有源区被配置为产生第一发射。然后在第二半导体材料上形成转换材料。转换材料具有晶体结构并且被配置为产生第二发射。该方法还包括调整转换材料的特性，使得第一和第二发射的组合具有至少近似于发光器件的目标色度的色度。

2. 发明授权

US08664664B2 Silicon carbide dimpled substrate 有权
标题翻译：碳化硅凹凸基板
公开(公告)号：US08664664B2
公开(公告)日：2014-03-04
申请号：US11651528
申请日：2007-01-10
申请人： Christopher Harris , Cem Basceri , Thomas Gehrke , Cengiz Balkas
发明人： Christopher Harris , Cem Basceri , Thomas Gehrke , Cengiz Balkas
IPC分类号： H01L29/15 , H01L31/0312
CPC分类号： H01L33/38 , H01L21/0475 , H01L23/367 , H01L23/3738 , H01L29/0657 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/417 , H01L33/0079 , H01L33/32 , H01L2924/0002 , H01L2924/10158 , H01L2933/0016 , H01L2924/00
摘要： A dimpled substrate and method of making including a substrate of high thermal conductivity having a first main surface and a second main surface opposite the first main surface. Active epitaxial layers are formed on the first main surface of the substrate. Dimples are formed as extending from the second main surface into the substrate toward the first main surface. An electrical contact of low resistance material is disposed on the second main surface and within the dimples. A back contact of low resistance and low loss is thus provided while maintaining the substrate as an effective heat sink.
摘要翻译：一种凹凸基板及其制造方法，包括具有第一主表面和与第一主表面相对的第二主表面的具有高导热性的基板。在衬底的第一主表面上形成有源外延层。凹坑形成为从第二主表面延伸到基板朝向第一主表面。低电阻材料的电触点设置在第二主表面和凹坑内。因此，在保持基板作为有效散热器的同时提供低电阻和低损耗的背接触。

3. 发明申请

US20120119223A1 Gallium Nitride Semiconductor Structures with Compositionally-Graded Transition Layer 有权
标题翻译：具有组成梯度过渡层的氮化镓半导体结构
公开(公告)号：US20120119223A1
公开(公告)日：2012-05-17
申请号：US13359892
申请日：2012-01-27
申请人： T. Warren Weeks, JR. , Edwin L. Piner , Thomas Gehrke , Kevin J. Linthicum
发明人： T. Warren Weeks, JR. , Edwin L. Piner , Thomas Gehrke , Kevin J. Linthicum
IPC分类号： H01L29/772 , H01L29/205
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译：本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。过渡层由氮化镓材料与衬底之间的热膨胀速率差异导致的氮化镓材料层中的应力成分梯度降低。氮化镓材料层中的应力降低降低了形成裂纹的倾向。因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。半导体材料可以用于许多微电子和光学应用中。

4. 发明授权

US07485512B2 Method of manufacturing an adaptive AIGaN buffer layer 有权
标题翻译：制造自适应AIGaN缓冲层的方法
公开(公告)号：US07485512B2
公开(公告)日：2009-02-03
申请号：US11474431
申请日：2006-06-26
申请人： Christopher Harris , Thomas Gehrke , T. Warren Weeks, Jr. , Cem Basceri , Elif Berkman
发明人： Christopher Harris , Thomas Gehrke , T. Warren Weeks, Jr. , Cem Basceri , Elif Berkman
IPC分类号： H01L21/338
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.
摘要翻译：补偿衬底的近表面区域的电阻率的方法包括在衬底上外延生长缓冲层，其中缓冲液生长为具有取决于衬底的电阻率和导电性的掺杂剂浓度，从而消耗残余或在基板的近表面区域内的过量电荷。缓冲层的掺杂剂分布平滑地分级，或者可以由不同掺杂剂浓度的子层构成，还提供缓冲层的高度电阻上部，对于随后的器件生长是理想的。此外，缓冲层可以掺杂碳，并且可以在外延生长期间使用铝来吸收碳。

5. 发明授权

US07326971B2 Gallium nitride based high-electron mobility devices 有权
标题翻译：基于氮化镓的高电子迁移率器件
公开(公告)号：US07326971B2
公开(公告)日：2008-02-05
申请号：US11147341
申请日：2005-06-08
申请人： Christopher Harris , Thomas Gehrke , T. Warren Weeks, Jr. , Cem Basceri
发明人： Christopher Harris , Thomas Gehrke , T. Warren Weeks, Jr. , Cem Basceri
IPC分类号： H01L29/778
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.
摘要翻译：异质结装置包括第一层p型氮化铝镓; 在第一层上的第二层未掺杂的氮化镓; 在第二层上的第三层氮化铝镓; 以及在第二和第三层之间的电子气体。第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。

6. 发明申请

US20070200116A1 Silicon carbide dimpled substrate 有权
标题翻译：碳化硅凹凸基板
公开(公告)号：US20070200116A1
公开(公告)日：2007-08-30
申请号：US11651528
申请日：2007-01-10
申请人： Christopher Harris , Cem Basceri , Thomas Gehrke , Cengiz Balkas
发明人： Christopher Harris , Cem Basceri , Thomas Gehrke , Cengiz Balkas
IPC分类号： H01L31/0312
CPC分类号： H01L33/38 , H01L21/0475 , H01L23/367 , H01L23/3738 , H01L29/0657 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/417 , H01L33/0079 , H01L33/32 , H01L2924/0002 , H01L2924/10158 , H01L2933/0016 , H01L2924/00
摘要： A dimpled substrate and method of making including a substrate of high thermal conductivity having a first main surface and a second main surface opposite the first main surface. Active epitaxial layers are formed on the first main surface of the substrate. Dimples are formed as extending from the second main surface into the substrate toward the first main surface. An electrical contact of low resistance material is disposed on the second main surface and within the dimples. A back contact of low resistance and low loss is thus provided while maintaining the substrate as an effective heat sink.
摘要翻译：一种凹凸基板及其制造方法，包括具有第一主表面和与第一主表面相对的第二主表面的具有高导热性的基板。在衬底的第一主表面上形成有源外延层。凹坑形成为从第二主表面延伸到基板朝向第一主表面。低电阻材料的电触点设置在第二主表面和凹坑内。因此，在保持基板作为有效散热器的同时提供低电阻和低损耗的背接触。

7. 发明授权

US07095062B2 Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby 有权
公开(公告)号：US07095062B2
公开(公告)日：2006-08-22
申请号：US11074485
申请日：2005-03-08
申请人： Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
发明人： Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
IPC分类号： H01L29/12
CPC分类号： H01L21/0237 , H01L21/0243 , H01L21/02433 , H01L21/02447 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids. The gallium nitride pyramids preferably are grown at a first temperature and the gallium nitride preferably is grown on the pyramids at a second temperature that is higher than the first temperature. The first temperature preferably is about 1000° C. or less and the second temperature preferably is about 1100° C. or more. However, other than temperature, the same processing conditions preferably are used for both growth steps. The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium nitride layer. Accordingly, gallium nitride may be grown without the need to form masks during the gallium nitride growth process. Moreover, the gallium nitride growth may be performed using the same processing conditions other than temperatures changes. Accordingly, uninterrupted gallium nitride growth may be performed.

8. 发明授权

US06864160B2 Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts 有权
标题翻译：在包括非氮化镓柱的衬底上制造氮化镓半导体层的方法
公开(公告)号：US06864160B2
公开(公告)日：2005-03-08
申请号：US10115354
申请日：2002-04-03
申请人： Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
发明人： Kevin J. Linthicum , Thomas Gehrke , Robert F. Davis
IPC分类号： H01L21/20
CPC分类号： H01L21/0237 , H01L21/0243 , H01L21/02433 , H01L21/02447 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： A substrate includes non-gallium nitride posts that define trenches therebetween, wherein the non-gallium nitride posts include non-gallium nitride sidewalls and non-gallium nitride tops and the trenches include non-gallium floors. Gallium nitride is grown on the non-gallium nitride posts, including on the non-gallium nitride tops. Preferably, gallium nitride pyramids are grown on the non-gallium nitride tops and gallium nitride then is grown on the gallium nitride pyramids. The gallium nitride pyramids preferably are grown at a first temperature and the gallium nitride preferably is grown on the pyramids at a second temperature that is higher than the first temperature. The first temperature preferably is about 1000° C. or less and the second temperature preferably is about 1100° C. or more. However, other than temperature, the same processing conditions preferably are used for both growth steps. The grown gallium nitride on the pyramids preferably coalesces to form a continuous gallium nitride layer. Accordingly, gallium nitride may be grown without the need to form masks during the gallium nitride growth process. Moreover, the gallium nitride growth may be performed using the same processing conditions other than temperatures changes. Accordingly, uninterrupted gallium nitride growth may be performed.
摘要翻译：衬底包括在其间限定沟槽的非氮化镓柱，其中非氮化镓柱包括非氮化镓侧壁和非氮化镓顶部，并且沟槽包括非镓层。氮化镓在非氮化镓柱上生长，包括在非氮化镓顶上。优选地，在非氮化镓顶上生长氮化镓金字塔，然后在氮化镓金字塔上生长氮化镓。氮化镓金字塔优选在第一温度下生长，并且氮化镓优选在高于第一温度的第二温度下生长在锥体上。第一温度优选为约1000℃以下，第二温度优选为约1100℃以上。然而，除了温度之外，相同的加工条件优选用于两个生长步骤。金字塔上生长的氮化镓优选聚结形成连续的氮化镓层。因此，可以在氮化镓生长过程中不需要形成掩模来生长氮化镓。此外，可以使用与温度变化以外的相同的处理条件来进行氮化镓生长。因此，可以进行不间断的氮化镓生长。

9. 发明申请

US20050009304A1 Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches 有权
标题翻译：通过横向生长形成沟槽来制造氮化镓半导体层的方法
公开(公告)号：US20050009304A1
公开(公告)日：2005-01-13
申请号：US10915665
申请日：2004-08-10
申请人： Tsvetanka Zheleva , Darren Thomson , Scott Smith , Kevin Linthicum , Thomas Gehrke , Robert Davis
发明人： Tsvetanka Zheleva , Darren Thomson , Scott Smith , Kevin Linthicum , Thomas Gehrke , Robert Davis
IPC分类号： C30B29/38 , H01L21/20 , H01L21/205 , H01S5/02 , H01L21/00 , C30B1/00 , H01L21/36
CPC分类号： H01L21/0265 , H01L21/02378 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01S5/021 , H01S2304/12
摘要： A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.
摘要翻译：氮化镓层横向生长成氮化镓层中的沟槽，从而形成横向氮化镓半导体层。然后可以在横向氮化镓半导体层中形成至少一个微电子器件。位错缺陷不会横向显着传播到横向氮化镓半导体层中，使得侧向氮化镓半导体层相对无缺陷。

10. 发明授权

US06649287B2 Gallium nitride materials and methods 有权
公开(公告)号：US06649287B2
公开(公告)日：2003-11-18
申请号：US09736972
申请日：2000-12-14
申请人： T. Warren Weeks, Jr. , Edwin L. Piner , Thomas Gehrke , Kevin J. Linthicum
发明人： T. Warren Weeks, Jr. , Edwin L. Piner , Thomas Gehrke , Kevin J. Linthicum
IPC分类号： B32B900
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

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